Semiconductor Etch Process Research Articles

1.3-μm spot-size-converter integrated laser diodes fabricated by narrow-stripe selective MOVPE

High-performance 1.3-/spl mu/m spot-size-converter integrated laser diodes (SSC-LDs) have been developed by using narrow-stripe (<2.0 /spl mu/m) selective MOVPE. In order to decrease leak current at high temperature, a p-n-p-n current blocking structure was added using a self-alignment process. These LD's no longer require a semiconductor etching process. Superior lasing characteristics, such as a low driving current of 56 mA for output power of 10 mW, and high-slope efficiency at 85/spl deg/C, were achieved by using a high-quality multiple-quantum well (MQW) active layer of narrow-stripe selective MOVPE and a p-n-p-n current blocking structure. A narrow radiation angle of 12/spl deg/ was obtained by optimizing the tapered-waveguide profile. A high-coupling efficiency of -2.8 dB was achieved between a LD chip and a single-mode fiber (SMF). This SSC-LD is very appropriate as a light source for access network systems, which require a low-cost LD module. It has excellent coupling efficiency, using a SMF, and a simple fabrication process, using selective MOVPE.