Semiconductor Domain Research Articles

On the Theory of Electrical Domains in Hot Electron Semiconductors

AbstractAn analysis is given of the conditions under which exist stationary moving domains in hot electron semiconductors. The criteria for soft and hard regimes of domain excitation are obtained. It is shown that several domain modes may exist which propagate with different velocities. The problem of the current oscillations in the external circuit is considered briefly and the conditions under which such oscillations appeare are stated.

On the Problem of Static Domains in Hot Electron Semiconductors

AbstractA qualitative study is made of the possible types of static inhomogeneous charge and field distributions in hot electron semiconductors. Both continuous and discontinuous solutions are considered, the discontinuities in the displacement vector occurring either at the contacts or inside the sample.

Contribution of acoustoelectric current to current saturation in piezoelectric semiconductors

A quantitative interpretation of current saturation and of high field domains in piezoelectric semiconductors is proposed. These phenomena arise from acoustoelectric current. The theory is in good agreement with experimental results for CdS. Experimental results for tellurium are discussed.

On the non-linear theory of electrical domains in hot electron semiconductors

The results are described of the non-linear treatment of the stationary electrical domains' motion. The domains arise in hot electron semiconductors if the N-type negative resistance were formed in the corresponding homogeneous system.

A Simple Asymptotic Formula for the Motion of Simultaneous Electric Field and Conductivity Domains in Semiconductors

physica status solidi (b)Volume 16, Issue 1 p. K59-K62 Short Note A Simple Asymptotic Formula for the Motion of Simultaneous Electric Field and Conductivity Domains in Semiconductors W. E. Wilhelm, W. E. Wilhelm IV. Physikalisches Institut der Humboldt-Universität zu Berlin und Physikalisch-Technisches Institute der Deutschen Akademie der Wissenschaften zu BerlinSearch for more papers by this author W. E. Wilhelm, W. E. Wilhelm IV. Physikalisches Institut der Humboldt-Universität zu Berlin und Physikalisch-Technisches Institute der Deutschen Akademie der Wissenschaften zu BerlinSearch for more papers by this author First published: 1966 https://doi.org/10.1002/pssb.19660160150Citations: 3AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Citing Literature Volume16, Issue11966Pages K59-K62 RelatedInformation

On the Velocity of Space Charge Waves (Electrical Domains) in Semiconductors

AbstractThe non‐linear problem of the velocity of space charge waves (electrical domains) which occur when the volume differential resistance becomes negative is studied. Particular attention is paid to the recombination (concentration controlled) type of instability. The domain velocity is derived for the cases in which the Maxwellian relaxation time is much greater or much smaller than the recombination time. The results obtained are in order of magnitude agreement with experimental data on domains in Au‐ and Cu‐doped Ge [13, 15].

Electrostatic domains in two-valley semiconductors

Electrostatic domains in two-valley semiconductors