Semiconducting Polymer Poly Research Articles

Direct and Inverse Photoelectron Spectroscopy Evidence for a Revised Picture of Electronic States of Negative Polarons in n‐Doped C60

AbstractDetermining the electronic levels associated with polarons, the fundamental charge carriers in organic semiconductors, is key to understanding the charge transport properties of these materials. Recent findings challenge the traditional view of these electronic levels by highlighting the importance of intra‐molecular Coulomb interactions in polarons. Experimental evidence was previously presented for a revised model of the negative polaron in the case of the polymer semiconductor poly(NDI2OD‐T2); there, the addition of an excess electron was seen to lead to the emergence of a singly occupied state within the energy gap of the undoped material and an unoccupied state above the edge of the conduction states. Here, focus is on a small‐molecule semiconductor, C60, and spectral evidence is provided of a similar picture for the new states appearing upon polaron formation. Specifically, direct and inverse photoemission spectroscopy is used to investigate the density of states in C60 films n‐doped with two dimeric dopants. The Coulomb interaction energy (Hubbard U) of the C60 anion is experimentally determined to be ≈1.1 eV, a value that aligns closely with theoretical predictions.

Enhancing the Maturation of Human Pluripotent Stem Cell-Derived Cardiomyocytes with an n-Type Organic Semiconductor Coating.

Human pluripotent stem cell-derived cardiomyocytes (hPSC-CMs) are a promising cell source for cardiac regenerative medicine and in vitro modeling. However, hPSC-CMs exhibit immature structural and functional properties compared with adult cardiomyocytes. Various electrical, mechanical, and biochemical cues have been applied to enhance hPSC-CM maturation but with limited success. In this work, we investigated the potential application of the semiconducting polymer poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} (P(NDI2OD-T2)) as a light-sensitive material to stimulate hPSC-CMs optically. Our results indicated that P(NDI2OD-T2)-mediated photostimulation caused cell damage at irradiances applied long-term above 36 μW/mm2 and did not regulate cardiac monolayer beating (after maturation) at higher intensities applied in a transient fashion. However, we discovered that the cells grown on P(NDI2OD-T2)-coated substrates showed significantly enhanced expression of cardiomyocyte maturation markers in the absence of a light exposure stimulus. A combination of techniques, such as atomic force microscopy, scanning electron microscopy, and quartz crystal microbalance with dissipation monitoring, which we applied to investigate the interface of the cell with the n-type coating, revealed that P(NDI2OD-T2) impacted the nanostructure, adsorption, and viscoelasticity of the Matrigel coating used as a cell adhesion promoter matrix. This modified cellular microenvironment promoted the expression of cardiomyocyte maturation markers related to contraction, calcium handling, metabolism, and conduction. Overall, our findings demonstrate that conjugated polymers such as P(NDI2OD-T2) can be used as passive coatings to direct stem cell fate through interfacial engineering of cell growth substrates.

Polymeric Semiconductor in Field-Effect Transistors Utilizing Flexible and High-Surface Area Expanded Poly(tetrafluoroethylene) Membrane Gate Dielectrics.

Organic field-effect transistors (OFETs) were fabricated using three high-surface area and flexible expanded-poly(tetrafluoroethylene) (ePTFE) membranes in gate dielectrics, along with the semiconducting polymer poly[2,5-bis(2-octyldodecyl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione-3,6-diyl)-alt-(2,2':5',2″:5″,2‴-quaterthiophen-5,5‴-diyl)] (PDPP4T). The transistor behavior of these devices was investigated following annealing at 50, 100, 150, and 200 °C, all sustained for 1 h. For annealing temperatures above 50 °C, the OFETs displayed improved transistor behavior and a significant increase in output current while maintaining similar magnitudes of Vth shifts when subjected to static voltage compared to those kept at ambient temperature. We also tested the response to NO2 gas for further characterization and for possible applications. The ePTFE-PDPP4T interface of each membrane was characterized via scanning electron microscopy for all four annealing temperatures to derive a model for the hole mobility of the ePTFE-PDPP4T OFETs that accounts for the microporous structure of the ePTFE and consequently adjusts the channel width of the OFET. Using this model, a maximum hole mobility of 1.8 ± 1.0 cm2/V s was calculated for the polymer in an ePTFE-PDPP4T OFET annealed at 200 °C, whereas a PDPP4T OFET using only the native silicon wafer oxide as a gate dielectric exhibited a hole mobility of just 0.09 ± 0.03 cm2/V s at the same annealing condition. This work demonstrates that responsive semiconducting polymer films can be deposited on nominally nonwetting and extremely bendable membranes, and the charge carrier mobility can be significantly increased compared to their as-prepared state by using thermally durable polymer membranes with unique microstructures as gate dielectrics.

Charge Transport in Sub‐Monolayer Networks of a Naphthalene‐Diimide‐Based Copolymer

AbstractSub‐monolayer networks of the electron‐transporting semiconducting polymer poly([N,N’‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)−2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)) (P(NDI2OD‐T2)) are realized through judicious choice of spin‐coating solvent and control of solution concentration. These sub‐monolayer networks provide a platform to study the effects of surface coverage, network connectivity, and orientational order on charge transport. It is found that charge transport through semiconducting polymer networks depends not only on the coverage/concentration of the material but also on the nature of the conduction paths themselves. Down to 40% surface coverage, current measured in a field‐effect architecture decreases in line with the decrease in surface coverage, but drops precipitously below a surface coverage of 40%. Below 40% surface coverage, there is a marked decrease in network connectivity (quantified through the branching point density) and a decrease in orientational order. Furthermore, an increase in the density of dangling branches (dead ends) is also seen with decreasing surface coverage. Additional supporting data in the form of grazing incidence wide‐angle X‐ray scattering (GIWAXS), optical spectroscopy, and charge modulation spectroscopy are presented, which help to establish that long‐range interconnectivity rather than local morphology dominates charge transport in P(NDI2OD‐T2) sub‐monolayers as well as thin films.

Improved Capacitive Energy Storage at High Temperature via Constructing Physical Cross‐Link and Electron–Hole Pairs Based on P‐Type Semiconductive Polymer Filler

AbstractIn this work, p‐type polymer semiconductor poly(2‐((3,6,7,10,11‐pentakis (hexyloxy) triphenylene‐2‐yl)oxy)ethyl methacrylate) (PMHT) is added into polyetherimide (PEI). Benefiting from the electrostatic interaction between strong electrophilic charged phenyls of the PEI matrix and strong electronegative benzophenanthrene unit of the PMHT filler, the physical cross‐linked networks are formed in polymer blends. Meanwhile, the lowest unoccupied molecular orbital level of PEI is close to the highest occupied molecular orbital level of PMHT, which is easy to establish electron–hole pair by Coulomb force. Thus, the carrier trap is constructed in the heterojunction region between PMHT filler and PEI matrix. Both physically cross‐linked networks and electron–hole pairs can promote breakdown strength (Eb) of PEI and decrease energy loss. Importantly, PMHT filler can improve the dielectric constant of PEI. As a result, 0.75 wt% PMHT/PEI delivers an ultrahigh discharge energy density (Ud) of 10.7 J cm−3 at an Eb of 680 MV m−1 and at room temperature, and maintains a charge and discharge efficiency of above 90%. In addition, a superior Ud of 5.1 and 3.3 J cm−3 is achieved at 150 and 200 °C, respectively. This paper creates a new perspective for preparing high‐properties polymer dielectrics by combining the advantages of cross‐linking and electron–hole pairs.

(Invited) Manipulating Photoexcitations of Flexible-Chain Polymer Semiconductors Via the Local Environment

Semiconducting:ferroelectric blends are interesting as an optoelectronic system because the strong coulombic interactions in excitons may be reduced by an enhanced polar environment provided by the ferroelectric component. Here, we demonstrate variations in the photoluminescence and charge dynamics of photo-induced absorption with model blends of the archetypal semiconducting polymer poly(3-hexylthiophene) (P3HT) and ferroelectric commodity polymer poly(vinylidene difluoride) (PVDF). This result suggests correlations between local polarity and photophysical processes of exciton dissociation and recombination, likely due to some degree of intermixing in specific blend ratios. Indeed, we see evidence of vitrification, i.e. glass formation, often leading to intermixing in these blends by varying the composition and molecular weight of the blend components. Furthermore, we will exploit the ferroelectric nano-domains, exhibited by the ter-polymer of PVDF, poly[(vinylidene fluoride‐co-trifluoro ethylene‐co-chlorotrifluoro ethylene)] [P(VDF-TrFE-CTFE)] to deliver fundamental insights into the required length scale of intermixing for photophysical processes.

Rational design of semiconducting polymer poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(6-{4-ethyl-piperazin-1-yl}-2-phenyl-benzo{de}isoquinoline-1,3-dione)] for highly selective photoelectrochemical assay of p-phenylenediamine

Herein, this paper reports a simple and label-free photoelectrochemical (PEC) sensor based on the organic semiconducting conjugated polymer-polyfluorene derivative, poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(6-{4-ethyl-piperazin-1-yl}-2-phenyl-benzo{de}isoquinoline-1,3-dione)] (PFNA). The PFNA was designed and obtained the lowest unoccupied molecular orbital (LUMO)/highest occupied molecular orbital (HOMO) values via spectral characterizations. The PFNA modified electrode produced a stable and enhanced photocurrent signal under white light irradiation at a bias of −0.1 V in phosphate buffer solution. A sensitive increment of the photocurrent was observed with the addition of p-phenylenediamine (p-PD). A possible mechanism for this photoelectrochemical process including the photoexcitation of the polymer, electron injection from polymer toward the electrode, and the hole-scavenging process by the reductants were studied. The π bond in the polymer might facilitate the photoelectrochemical process owing to the enhanced electronic coupling between the polymer and the reductants. A PEC analysis on p-PD has been carried out to evaluate the photoelectrochemical performances of the modified electrode, which presents the wide linear ranges of 0.2–400 μM, with a lower detection limit of 0.13 μM. This work reports the PEC performance of organic semiconducting conjugated polymer-polyfluorene derivative, which would promote more efficient photoelectrochemical design of sensors and devices.

A flexible floating-gate based organic field-effect transistor non-volatile memory based on F8BT/PMMA integrated floating-gate/tunneling layer

The solution mixing method was adopted to build polymer semiconductor poly(9,9-dioctylflfluorene-co-benzothiadiazole) (F8BT) nanoparticles (NPs), which were mixed with poly (methyl methacrylate) (PMMA) in a solution to prepare an integrated floating-gate/tunneling layer. On this basis, flexible floating-gate based organic field-effect transistor non-volatile memories (F-OFET-NVMs) were prepared. The intrinsic correlations of the microstructures in the integrated floating-gate/tunneling layer of the memory devices with the device performance were explored. Moreover, correlations of the charge injection and discharge, physical mechanism of memory, and charge trapping capacity of the floating-gate/tunneling layer with different F8BT/PMMA mass ratios with the key parameters of memory devices were investigated. Relevant results indicate that the memory devices are able to well trap charges inside the F8BT NPs during operation at a programming voltage of +40 V, an erasing voltage of −40 V, and a pulse width of 1 s. The floating gate acquires the injected and trapped bipolar charges (electrons and holes). The optimized high-performance memory device is found to have an average memory window of 9.5 V, remain stable for more than three years, and have reliable stability in more than 100 erase/write cycles. Furthermore, the memory device also exhibits outstanding durability under mechanical bending and still has high storage stability after 6,000 times of bending with a bending radius of 3 mm. The research results powerfully promote the research progress of applying semiconductor polymers to memory devices.

Cuprous Oxide Nanoparticles: Synthesis, Characterization, and Their Application for Enhancing the Humidity-Sensing Properties of Poly(dioctylfluorene).

In this paper, we report on the synthesis—via the wet chemical precipitation route method—and thin film characteristics of inorganic semiconductor, cuprous oxide (Cu2O) nanoparticles, for their potential application in enhancing the humidity-sensing properties of semiconducting polymer poly(9,9-dioctylfluorene) (F8). For morphological analysis of the synthesized Cu2O nanoparticles, transmission electron microscope (TEM) and scanning electron microscope (SEM) micrographs are studied to investigate the texture, distribution, shape, and sizes of Cu2O crystallites. The TEM image of the Cu2O nanoparticles exhibits somewhat non-uniform distribution with almost uniform shape and size having an average particle size of ≈24 ± 2 nm. Fourier transformed infrared (FTIR) and X-ray diffraction (XRD) spectra are studied to validate the formation of Cu2O nanoparticles. Additionally, atomic force microscopy (AFM) is performed to analyze the surface morphology of polymer-inorganic (F8-Cu2O) nanocomposites thin film to see the grain sizes, mosaics, and average surface roughness. In order to study the enhancement in sensing properties of F8, a hybrid organic–inorganic (F8-Cu2O) surface-type humidity sensor Ag/F8-Cu2O/Ag is fabricated by employing F8 polymer as an active matrix layer and Cu2O nanoparticles as a dopant. The Ag/F8-Cu2O/Ag device is prepared by spin coating a 10:1 wt% solution of F8-Cu2O nanocomposite on pre-patterned silver (Ag) electrodes on glass. The inter-electrode gap (≈5 μm) between Ag is developed by photolithography. To study humidity sensing, the Ag/F8-Cu2O/Ag device is characterized by measuring its capacitance (C) as a function of relative humidity (%RH) at two different frequencies (120 Hz and 1 kHz). The device exhibits a broad humidity sensing range (27–86%RH) with shorter response time and recovery time, i.e., 9 s and 8 s, respectively. The present results show significant enhancement in the humidity-sensing properties as compared to our previously reported results of Ag/F8/Ag sensor wherein the humidity sensing range was 45–78%RH with 15 s and 7 s response and recovery times, respectively. The improvement in the humidity-sensing properties is attributed to the potential use of Cu2O nanoparticles, which change the hydrophobicity, surface to volume ratio of Cu2O nanoparticles, as well as modification in electron polarizability and polarity of the F8 matrix layer.

A potential dual-functional thermoelectric and electroelectric polymer composite

Doping alters the electronic properties of the host semiconducting polymer and may enable tunable devices with temperature sensing and environmental heating/cooling control system applications. We present a doped composite consisting of the p-type semiconducting polymer poly(3-hexylthiophene-2,5-diyl) (P3HT) and a thermoelectric electron acceptor, iodine, as the active layer of a field-effect device, where temperature modulates the current-voltage characteristics and on-off ratios, and gate voltage modulates the thermoelectric properties of the active layer, called dual-functionality. A small amount of iodine doping improved FET output by a factor of 10 as well as thermoelectric power factor by a factor of 3. Those gains are primarily attributed to thermoelectric doping induced charge-carrier density increases.

Transient Strain-Induced Electronic Structure Modulation in a Semiconducting Polymer Imaged by Scanning Ultrafast Electron Microscopy.

Understanding the optoelectronic properties of semiconducting polymers under external strain is essential for their applications in flexible devices. Although prior studies have highlighted the impact of static and macroscopic strains, assessing the effect of a local transient deformation before structural relaxation occurs remains challenging. Here, we employ scanning ultrafast electron microscopy (SUEM) to image the dynamics of a photoinduced transient strain in the semiconducting polymer poly(3-hexylthiophene) (P3HT). We observe that the photoinduced SUEM contrast, corresponding to the local change of secondary electron emission, exhibits an unusual ring-shaped profile. We attribute the observation to the electronic structure modulation of P3HT caused by a photoinduced strain field owing to its low modulus and strong electron-lattice coupling, supported by a finite-element analysis. Our work provides insights into tailoring optoelectronic properties using transient mechanical deformation in semiconducting polymers and demonstrates the versatility of SUEM to study photophysical processes in diverse materials.

Preparation, Physical Properties, and Applications of Water-Based Functional Polymer Inks.

In this study, water-based functional polymer inks are prepared using different solvent displacement methods, in particular, polymer functional inks based on semiconducting polymer poly(3-hexylthiophene) and the ferroelectric polymer poly(vinylidene fluoride) and its copolymers with trifluoroethylene. The nanoparticles that are included in the inks are prepared by miniemulsion, as well as flash and dialysis nanoprecipitation techniques and we discuss the properties of the inks obtained by each technique. Finally, an example of the functionality of a semiconducting/ferroelectric polymer coating prepared from water-based inks is presented.

Ratiometric pH sensing by fluorescence resonance energy transfer-based hybrid semiconducting polymer dots in living cells

Intracellular pH plays a significant role in all cell activities. Due to their precise imaging capabilities, fluorescent probes have attracted much attention for the investigation of pH-regulated processes. Detecting intracellular pH values with high throughput is critical for cell research and applications. In this work, hybrid semiconducting polymer dots (Pdots) were developed and characterized and were applied for cell imaging and exclusive ratiometric sensing of intracellular pH values. The reported Pdots were prepared by blending a synthesized block polymer (POMF) and a semiconducting polymer poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEHPPV) to construct a fluorescence resonance energy transfer system for ratiometric sensing. Pdots showed many advantages, including high brightness, excellent photostability and biocompatibility, giving the pH probe high sensitivity and good stability. Our results proved the capability of POMF–MEHPPV Pdots for the detection of pH in living cells.

Non-destructive depth-dependent morphological characterization of ferroelectric:semiconducting polymer blend films

Herein, we investigate the technologically relevant blend of the ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene), P(VDF-co-TrFE), with the semiconducting polymer poly(3-hexylthiophene), P3HT, by means of a combination of scanning probe microscopy techniques, namely atomic force microscopy, conductive force microscopy, kelvin probe force microscopy, and piezoresponse force microscopy. This combination proves to be a powerful tool for the non-destructive morphological reconstruction of multi-functional nano-structured thin films, as those under study. Each modality allows discerning the two blend constituents based on their functionality, and, additionally, probes layers of different thickness with respect to the film surface. The depth-dependent information that is collected allows a qualitative reconstruction of the blend’s composition and morphology both in-plane and out-of-plane of the film. We demonstrate that P3HT exhibits the tendency to reside the film surface at an almost constant composition of 15%, independent of blend’s composition. Increasing the P3HT content in the blend results in the segregation of P3HT at the upper layers of the films, partially buried below a P(VDF-co-TrFE) superficial layer. The depletion of P3HT from the substrate/film interface is reflected by the poor existence of conducting pathways that connect the top and bottom planes of the film. The three-dimensional morphology of this polymer blend that is revealed thanks to the employed techniques deviates substantially from the ideal morphology proposed for the efficient performance of the targeted memory devices.

Vapor Phase Infiltration Doping of the Semiconducting Polymer Poly(aniline) with TiCl4 + H2O: Mechanisms, Reaction Kinetics, and Electrical and Optical Properties

This study reports on the optical and electronic properties of organic–inorganic hybrid semiconductors synthesized via vapor phase infiltration (VPI) of poly(aniline) (PAni) with TiCl4 and H2O. Thi...

Fabrication and Microelectronic Properties of Hybrid Organic–Inorganic (poly(9,9, dioctylfluorene)/p-Si) Heterojunction for Electronic Applications

We report on the microelectronic characteristics of a novel hybrid heterojunction device based on a solution processable semiconducting polymer poly(9,9-dioctylfluorenyl-2,7-diyl)- co-(N,N0-diphenyl)-N,N′di(p-butyl-oxy-pheyl)-1,4-diamino-benzene) (PFB) and p-type silicon (p-Si). The PFB/p-Si heterojunction is prepared by spin coating 20 mg/mL solution of PFB in chloroform on the precleaned polished surface of p-Si substrate. Thermal evaporation of silver (Ag) electrode on top of PFB completes the fabrication of the Ag (90 nm)/PFB (180 nm)/p-Si heterojunction device. Morphology of PFB thin film is studied by using an atomic force microscope (AFM) and scanning electron microscope (SEM), which reveals grains are randomly distributed with slightly different grain sizes and shapes. It leads the film to form nonuniformity and some roughness in its topography that results in limiting the current (I) flow across the film/interface with p-Si. Ultraviolet (UV–vis) absorption and X-ray diffraction (XRD) spectra are measured for optical bandgap and crystal structure analysis of PFB. The key microelectronic parameters—rectification ratio (RR), ideality factor (n), barrier height (Φb), series resistance (Rs) and reverse saturation current (I0)—of the Ag/PFB/p-Si heterojunction are found from current–voltage (I–V) characteristics at room temperature (300 K) in dark conditions (≈0 lux). The Ag/PFB/p-Si heterojunction device exhibits improved microelectronic parameters when compared to those of earlier reported devices that were prepared in the same configuration. This improvement in the device parameters reveals enhancement in the microelectronic properties across the interface/depletion region of the Ag/PFB/p-Si device, which can be attributed to the remarkable electronic properties of PFB such as its relatively high hole mobility and better charge carriers’ conduction. The charge transport mechanisms through the device is also studied. Having the smaller values of I0 ≈ 7 × 10−10 A and n ≈ 3.23, as well as higher shunt resistance (Rsh) of 32 GΩ for the Ag/PFB/p-Si device suggest its potential for many electronic and optoelectronic applications.

A data mining method from pyrolyzed products: Pyrolysis-gas chromatography-photoionization-high resolution time-of-flight mass spectrometry and kendrick mass defect analysis for polymer semiconductor poly(3-hexylthiophene)

Structural analysis of polymer semiconductors is important to improve their properties but applicable method is limited due to insolubility. Here an efficient and comprehensive data mining method for such materials is developed by using pyrolysis-gas chromatography- high resolution mass spectrometry (Py-GC-HRMS). Py-GC-HRMS analysis of a polymer semiconductor poly(3-hexylthiophene) (P3HT) was performed and pyrogram with vast number of peaks was obtained. Normally in analysis of Py-GC-HRMS results, a mass spectrum is obtained for one peak in chromatogram. In one of our techniques, the mass spectra in wide time range were integrated to one mass spectrum including the information of over 300 compounds. Analysis of the mass spectrum could be using Kendrick mass defect (KMD) analysis. By making KMD plots, the compounds categorized into 29 groups depending on the structures of thiophene derivative moieties. As a result, chemical composition analysis for 29 compounds lead to peak assignment for 277 compounds in short time. Furthermore, these compounds could be categorized depending on different structural features (e.g., number of sulfur atoms, degree of unsaturation) by using appropriate divisors, leading to understanding of relationship between structural features of compounds and their retention time. The measurement without GC column provided the similar information about compounds, although the information of the retention time was lost. These methods can be one of key analysis method for insoluble polymer materials.

Doping of the Semiconducting Polymer Poly(3-hexylthiophene) (P3HT) in Organic Photoelectrochemical Cells

We demonstrate the dependence of photoelectrochemical properties of the organic semiconductor film poly(3-hexylthiophene) (P3HT) on the dopant species. We use cyclic voltammetry to characterize ele...

High-performance flexible organic thin-film transistor nonvolatile memory based on molecular floating-gate and pn-heterojunction channel layer

Flexible floating-gate structural organic thin-film transistor (FG-OTFT) nonvolatile memories (NVMs) are demonstrated based on an integrated molecular floating-gate/tunneling (I-FG/T) layer and a pn-heterojunction channel layer. Semiconducting polymer poly(9,9-dioctylfluorene-co-benzothiadiazole) nanoparticles and insulating polymer polystyrene are used to build the I-FG/T layers by spin-coating their solution. The dependence of the memory performances on the structure of I-FG/T layers is researched. For achieving a large charge storage capacity, the pn-heterojunction channel, consisting of 2,9-didecyldinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene and F16CuPc, is fabricated to provide both electrons and holes for injecting and trapping in the floating gate by overwriting the stored charges with an opposite polarity at the programming and erasing voltages, respectively. As an optimal result, a high performance flexible FG-OTFT NVM is achieved, with a large memory window of 21.6 V on average, a highly stable charge storage retention capability up to 10 years, and a highly reliable programming/erasing switching endurance over 200 cycles. The FG-OTFT NVM also exhibits an excellent mechanical bending durability with the memory performances maintaining well over 6000 bending cycles at a bending radius of 5.9 mm.

On the growth, structure and dynamics of P3EHT crystals

We employ X-ray diffraction, NMR and UV-vis spectroscopy techniques to shed light on the structure, molecular mobility and crystallization of a prototypical semiconducting polymer poly(3-(2′-ethylhexyl)thiophene) (P3EHT).