Semiconductor Characteristics Research Articles

Photon-enhanced thermionic emission solar cells based on boron-doped graphene/carbon nanosphere composite aerogel photocathode material

This study employed a two-step hydrothermal reduction process and freeze-drying technique. Initially, carbon nanosphere composite aerogels (CNSs) were synthesized through the hydrothermal reduction of glucose. Subsequently, boron-doped graphene/carbon nanosphere composite aerogel (BGA/CNS) was prepared by utilizing graphene oxide (GO) and boric acid as carbon (C) and boron (B) sources, respectively, in conjunction with CNS. The photo-enhanced thermionic electron emission (PETE) performance of the samples was assessed using a custom-made device. Boron atom doping was found to modulate the bandgap of graphene aerogel and induce P-type semiconductor characteristics, while the addition of CNSs increased its specific surface area, thereby enhancing its photoelectric properties. The results indicated that BGA/CNS-8h exhibited superior PETE effects, with a short-circuit current, open-circuit voltage, and maximum power of 5.81 µA, −2.10V, and −1.57µW.

Design of a new palladium(ii) halide complex as a bio-active material: synthesis, physico-chemical studies, DFT-computations and evaluation of anti-inflammatory, antioxidant and anti-gastric damage activities.

Colorless single crystals of the zero-dimensional hybrid compound, (C6H10N2)2[PdCl6]·2H2O were acquired through the slow evaporation technique. The crystal structure was explored using SC-XRD, which demonstrates that the material crystallizes in the centrosymmetric space group P1̄ of the triclinic system. The density functional theory method at the B3LYP/Lan2mb basis set level was employed to establish the optimized geometry and vibrational frequencies of the title compound. An acceptable correspondence was observed between the results obtained through calculation and the experimental data, including the structure, and IR spectra. The optical characteristics revealed a direct band gap energy of 2.35 eV, validating the semiconductor characteristics of this new material. The results suggest strong agreement with the experimental data and validate the involvement of metal orbitals in defining the HOMO-LUMO boundary. Simultaneous TGA-DTA shows that this material remains solid up to 210 °C. Beyond these temperatures, a gradual decomposition process occurs, extending up to 440 °C and unfolding in several steps. This process entails the liberation of diverse compounds, encompassing organic molecules, and the evaporation of chlorine ions, ultimately leading to the formation of palladium oxide (PdO) as the final product. When given to rats with gastric ulcers at a dose of 100 mg kg-1, these compounds inhibit the key enzyme responsible for neutrophil infiltration as myeloperoxidase (MPO) by 38.7%. The compound also alleviates cellular damage induced by free radicals, demonstrated by a notable 48.3% decrease in thiobarbituric acid reactive substance rates (TBARS) compared to untreated rats. Additionally, these compounds bring about a substantial 30.6% reduction in the surface area of ulcers.

Prediction of two-dimensional carbon nitride materials with semimetal states and flat bands

The search for new two-dimensional (2D) carbon nitride (CN) materials with desirable properties is an important and critical area of research. This study presents a series of 2D CN materials with appealing features such as semimetal or flat bands. By utilizing group theory and graph theory, we perform a random search of the configurational space of 2D CN monolayers, leading to the identification of 721 new CN materials. Extensive density functional theory calculations were then conducted to evaluate their properties. We found that 57 materials exhibit semimetal behavior, while 664 display characteristics of semiconductors and normal metals. Notably, materials such as 51-5-16-C3N-r568 and 55-5-20-C4N-r568 feature topological Dirac semimetals with protected 1D topological boundary states. Moreover, 31 materials possess flat bands near their Fermi level, including two with kagome-like flat bands that induce intrinsic spontaneous magnetization due to partially-occupied flat bands. Our results offer several promising candidates for exploring physical phenomena related to semimetals or flat bands in 2D CN materials.

O-B(F)←N Functionalized Copolymers with Delayed Fluorescence and P-Type Semiconducting Characteristics.

Conjugated polymers with integrating properties of delayed fluorescence and photovoltaic responses simultaneously are scarcely reported due to the generally contradictory requirements for molecular structures to achieve the two properties. Herein, an O-B(F)←N functionalized fused unit (M) with multiple resonance features, small energy gap between lowest singlet excited state (S1) and triplet excited state (T1) (ΔEST = 0.23eV), and delayed fluorescence (τD = 0.75 µs), is designed. Selecting three benzodithiophene (BDT) derivatives as co-units to copolymerize with M, leading to a series of O-B(F)←N embedded polymers also maintaining delayed fluorescence (τD = 0.4-0.5 µs). Moreover, p-type semiconductor characteristics are tested for these polymers with hole mobilities in the range of 10-6-10-5 cm2/Vs. Devices with obviously photovoltaic responses are prepared using these polymers as donors and Y6 as the acceptor, affording a preliminary efficiency of 5.05%. This work successfully demonstrates an effective strategy to design conjugated polymers with integrating properties of delayed fluorescence and photovoltaic performance simultaneously by introducing O-B(F)←N functional groups to polymer backbones.

Wide-range resistivity characterization of semiconductors with terahertz time-domain spectroscopy

Resistivity is one of the most important characteristics in the semiconductor industry. The most common way to measure resistivity is the four-point probe method, which requires physical contact with the material under test. Terahertz time domain spectroscopy, a fast and non-destructive measurement method, is already well established in the characterization of dielectrics. In this work, we demonstrate the potential of two Drude model-based approaches to extract resistivity values from terahertz time-domain spectroscopy measurements of silicon in a wide range from about 10−3 Ωcm to 102 Ωcm. One method is an analytical approach and the other is an optimization approach. Four-point probe measurements are used as a reference. In addition, the spatial resistivity distribution is imaged by X-Y scanning of the samples to detect inhomogeneities in the doping distribution.

Realizing Weak Light Detection in a 2D Dielectric Switching Hybrid Perovskite Incorporating Dimethylamine

Abstract2D organic–inorganic hybrid perovskites (OIHPs) are regarded as potential candidates for the advancement of multifunctional phase‐transition materials due to their ability to integrate flexible functionality and superior electronic features from both organic and inorganic components. However, the development of 2D OIHPs with dielectric switches and weak light detection capability that are crucial for high‐resolution sensing and imaging, remains challenge. Herein, a novel 2D OIHP BDADMAPb2Br7 (1, BDA = 1,4‐butanediamine and DMA = dimethylamine) is presented, featuring a 2D Dion–Jacobson (DJ) bilayered structure incorporated with secondary amine. Upon heating and cooling cycles, 1 demonstrates long‐term reversible dielectric switching properties at 328 K. Meanwhile, 1 also shows compelling semiconductor characteristics, including a low dark current of 2.87 × 10−11 A (10 V), a large switching ratio of 4 × 103, and a high detectivity of 1.3 × 1012 Jones. In addition, the photodetector based on 1 exhibits an excellent weak light detection ability of 340 nW cm−2 at 405 nm. Such a 2D OIHP demonstrates a novel platform for creating multifunctional materials and significantly promotes the development of integrated devices.

Peculiarities of magnetoresistance in GaAs whiskers at low temperatures

Magnetoresistance of GaAs whiskers with concentrations in the vicinity to metal-insulator transition (MIT) 1017–1018 cm−3 were studied at low temperatures and high magnetic fields (up to 14 T). The whiskers were doped with Te during the growth. The whisker diameter ranges from 10 to 40 μm. Temperature dependence of the whisker resistance have shown metallic and semiconductor character in the proximity to MIT from various sides of the transition. Depending on doping level the character of the whisker magnetoresistance changes from linear positive to quadratic negative. The magnetoresistance of metallic whiskers is explained in terms of weak antilocalization (WAL) model. The specimens with semiconductor character of conductance revealed negative magnetoresistance, magnitude of which rises due to moving away from MIT and reach 15% for the whiskers with concentration 1017 cm−3. The possible reasons of the negative magnetoresistance are discussed. The effect observed is attributed to weak localization (WL) of charge carriers in the region of hopping conductance for the whiskers in the vicinity to MIT. A high negative magnetoresistance (NMR) for the whiskers of low dopant concentration is connected with subsurface conductance in the disordered upper layers of the whiskers due to their core-shell structure.

On the importance of varying device thickness and temperature on the outcome of space-charge-limited current measurements

Space-charge-limited current (SCLC) measurements are commonly employed to characterize charge-transport properties of semiconductors used in next-generation thin-film optoelectronics, such as organic π-conjugated small molecules and polymers, and metal-halide perovskites. Despite the wide-spread adoption of the method, there is no community-wide consensus around how SCLC measurements should be performed, nor how the data should be analyzed and reported. While it is common to report device characteristics by employing a simplistic analytical model for fitting a single J-V curve obtained from a solitary device at room temperature—sometimes in a very select voltage range—expectedly, such an approach will often not give an accurate picture of the underlying physics. On that account, we here aim to highlight the importance of reporting values extracted from not just a solitary single-carrier device measured at room temperature, but from devices with different thicknesses measured at varying device temperature. We also highlight how the choice of device thickness is especially critical in determining what device and material characteristics can be extracted from SCLC measurements, and how this choice can greatly affect the conclusions drawn about the probed semiconducting material. While other factors could affect the outcome of an SCLC measurement and the subsequent analysis, we hope that the topics covered in this article will result in overall improved charge-transport characterization of thin-film semiconductors and initiate a broader discussion into SCLC metrology at large.

Establishing the NiMo6Se8 Chevrel Phase as a Promising Material Using DFT

AbstractIn this study, the NiMo6Se8 Chevrel phase is analyzed using Density Functional Theory (DFT) and the Vienna Ab‐initio Simulation Package (VASP). The analysis focuses on the phase's structural, electrical, and mechanical characteristics to fill gaps in the current literature. The presence of a rhombohedral crystal structure confirms its thermodynamic stability, as indicated by a negative formation enthalpy, which suggests that it can be synthesized under favorable conditions. The electronic properties of the phase are analyzed, indicating that it exhibits semiconductor characteristics with a bandgap of 1.07 eV. This makes it appropriate for various technological applications. The estimated elastic constants provide an indication of mechanical strength and flexibility, with a noticeable presence of anisotropic elasticity. The confirmation of dynamical stability is achieved by analyzing the phonon dispersion curve, which reveals the absence of any negative frequencies. Furthermore, the material has a low thermal conductivity, increasing its suitability for thermoelectric applications. The analysis emphasizes the versatile capabilities of the NiMo6Se8 Chevrel phase, especially in thermoelectric and energy storage applications, showcasing its promising potential for future technological implementation.

Glass transition and crystallization of Se95Te5 chalcogenide glassy semiconductor

The study is dedicated to the investigation of thermo-physical characteristics of Se95Te5 chalcogenide glassy semiconductor during its glass formation and crystallization processes, employing various scanning rates of 5, 10, 15 and 20 K/min in non-isothermal modes through DSC measurement. Analysis of the structural relaxation kinetics involves the Kissinger’s, Augis and Bennett's, as well as Matusita’s approaches. Experimental data yield contains the determination of crucial parameters such as glass transition (𝑇𝑇𝑔𝑔), crystallization(𝑇𝑇𝑐𝑐), and melting temperatures alongside factors like reduced temperature of glass transition (𝑇𝑇𝑟𝑟𝑟𝑟), Hruby’s parameter (𝐾𝐾𝑔𝑔𝑔𝑔), fragility index (𝐹𝐹𝑖𝑖), Avrami exponents (n, m), glass transition (140.24 kJ/mol) and crystallization (Ec = 95.11 kJ/mol) energies, respectively. The results confirm that Se95Te5 chalcogenide system as an efficient glass former. Matusita’s method reveals that the crystallization mechanism (n = 2.51, m = 1.9) corresponds to volumetric nucleation with two-dimensional growth.

DFT studies on structural, electronic and optical properties of aluminum nitride nanotube doped by different concentrations of boron

Nanotubes are an exceptional class of materials whose unusual properties depend on geometry and composition. In this work, we have investigated the optoelectronic properties of aluminum nitride nanotube doped with boron in concentrations of 4.2 %, 8.3 %, and 12.5 % respectively. Analysis was done by considering the structural, electronic, and optical properties of the considered nanotubes using density functional theory implemented in quantum ESPRESSO and Yambo codes. Simulations revealed that doped aluminum nitride nanotube whose nitrogen atoms were replaced turned to metallic while doped aluminum nitride nanotube whose aluminum atoms were replaced retained its semiconducting characteristics showing various band gaps with different concentrations of dopants. Optical absorption behaviors revealed that 8.3 % B-doped aluminum nitride nanotube made better utilization of visible light than others and hence can be used as a candidate for dye degradation and wastewater treatment, solar cell, LED, and LASER. In the end, all the doped nanotubes were found to be worthy for various fields of science and technology.

Oxide Based Pentachromatic‐Vision Inspired Optoelectronic Synaptic Transistor with Large Conduction States Over 512

AbstractOptoelectronic neuromorphic devices based on oxide semiconductors have been potentially investigated to mimic the functions of human visual synapses. However, the challenge comes from the wide bandgap characteristics of numerous oxide semiconductors, which restricts the response range of the device under ultra‐violet (UV) region. Strategies for widening the response range are mostly focused on artificially generating the defect states, however, most of them results in mimicking the tetrachromatic visual system from UV to visible light range. To be used for industries such as robotics, or autonomous vehicles, mimicking the tetrachromatic vision system should be overcome up to near‐infrared (NIR) region. Here, a facile solution processed indium‐gallium‐zinc‐oxide and silver oxide structured optoelectronic synaptic transistor is fabricated not only to mimic the function of human synapses, but to overcome the tetrachromatic human visual system up to the NIR region. The device not only showed photoresponse characteristics under the entire 405 to 830 nm wavelength region, but also showed significant synaptic behaviors with over 512 conduction states under a reasonable incident light power density of 4.5 mW cm−2. The results will offer a useful facile method for fabricating optoelectronic synaptic transistors that can overcome the tetrachromatic vision systems.

MXene-Enhanced Ionovoltaic Effect by Evaporation and Water Infiltration in Semiconductor Nanochannels.

In recent years, substantial attention has been directed toward energy-harvesting systems that exploit sunlight energy and water resources. Intensive research efforts are underway to develop energy generation methodologies through interactions with water using various materials. In the present investigation, we synthesized sodium vanadium oxide (SVO) nanorods with n-type semiconductor characteristics. These nanorods facilitate the initiation of capillary phenomena within nanochannels, thereby enhancing the interfacial area between nanomaterials and ions. The open-circuit voltage (VOC) was 0.8 V, and the short-circuit current (ISC) was 30 μA, which were continuously monitored at room temperature using a 0.1 M saltwater solution. Additionally, we achieved enhanced energy generation by efficiently converting light energy into thermal energy using MXene, a 2D material. This was accomplished through the photothermal effect, leveraging the inherent semiconductor characteristics. Under light exposure, the system exhibited improved performance attributed to heightened ion diffusion and increased conductivity. This phenomenon was a result of the concerted synergy between ions and electrons facilitated by a semiconductor nanofluidic channel. Ultimately, we demonstrated an application to showcase real-world viability. In this scenario, electricity was harvested through a smart buoy floating on the water, and, based on this, data from the surrounding environment was sensed and wirelessly transmitted.

Effects of Vanadium Doping on the Optical Response and Electronic Structure of WS2 Monolayers

Abstract2D dilute magnetic semiconductors have been recently reported in transition metal dichalcogenides doped with spin‐polarized transition metal atoms, for example vanadium‐doped WS2 monolayers, which exhibit room‐temperature ferromagnetic ordering. However, a broadband characterization of the electronic band structure of these doped WS2 monolayers and its dependence on vanadium concentration is still lacking. Therefore, power‐dependent photoluminescence, resonant four‐wave mixing, and differential reflectance spectroscopies are performed here to study optical transitions close to the A exciton energy of vanadium‐doped WS2 monolayers at three different doping levels. Instead of a single A exciton peak, vanadium‐doped samples exhibit two photoluminescence peaks associated with transitions from a donor‐like level and the conduction band minima. Moreover, resonant Raman and second‐harmonic generation experiments reveal a blueshift in the B exciton energy but no energy change in the C exciton after vanadium doping. Density functional theory calculations show that the band structure is sensitive to the Hubbard U correction for vanadium, and several scenarios are proposed to explain the two photoluminescence peaks around the A exciton energy region. This work provides the first broadband optical characterization of these 2D dilute magnetic semiconductors, shedding light on the novel and tunable electronic features of V‐doped WS2 monolayers.

Prediction of a new 2D Janus monolayer MX2Si2Y2 (M = Mo, W and V; X/Y = N, P; X ≠ Y) from density functional theory

We devised the Janus monolayer MX2A2Y2 (M = Mo, W, V, Nb, Ta, Ti, Zr, Hf and Cr; X/Y = N, P and As; A = Si and Ge) and systematically investigated the structural parameters, phonon vibrations, thermal stability, the electronic and mechanical properties. Among the 26 systems, there are six stable Janus monolayers at room temperature: MoN2Si2P2, WN2Si2P2, VN2Si2P2, MoP2Si2N2, WP2Si2N2, CrN2Si2P2. Intriguingly, the MoP2Si2N2 and WP2Si2N2 show non-magnetic semiconductor properties. The MoN2Si2P2 and WN2Si2P2 demonstrate non-magnetic metallic ground states. The VN2Si2P2 and CrN2Si2P2 are magnetic metal with magnetic moments of 1.24 μB and 0.53 μB. Furthermore, the elastic constants of the MSi2N4 and five Janus monolayer MX2Si2Y2 (M = Mo, W and V; X/Y = N, P) meet the stability criteria, indicating they are mechanically stable. The in-plane stiffness of the MX2Si2Y2 increases with the increase of the number of metal atoms and are greatly reduced, compared with the corresponding MSi2N4. In addition, according to Poisson's ratio, the MN2Si2P2 with metallic characteristics are ductile, whereas the MP2Si2N2 with semiconductor characteristic are brittle. In short, the Janus monolayer MX2Si2Y2 enriches the family members of 2D materials. The rich electronic and mechanical properties make the MX2Si2Y2 have high application prospects for future novel mechanical electronic device applications.

Indium-free nonmetal and Nb co-doped anatase TiO2 transparent conductive oxide materials for photovoltaic applications: From first-principles calculations to macroscopic simulation

Various researchers have attempted to design indium-free transparent conductive materials. This study first employed density functional theory combined with the Hubbard U parameter to predict the photoelectric properties of nonmetal (B, C, N, F, P, and S) and Nb co-doped anatase TiO2. The results indicate that Ti0.875Nb0.125O1.96875N0.03125, Ti0.9375Nb0.0625O1.96875F0.03125, Ti0.875Nb0.125O1.96875P0.03125 and Ti0.9375Nb0.0625O1.96875S0.03125 possess characteristics of n-type semiconductors with high transmittance, exceptional thermal stability and wide bandgap. Notably, Ti0.9375Nb0.0625O1.96875S0.03125 exhibits optimal electronic conductivity due to its lower effective mass and higher electron concentration. Then, we used the SCAPS-1D solar cell simulation software to simulate the macroscopic characteristics of the MASnI3-based perovskite solar cell with Ti0.9375Nb0.0625O1.96875S0.03125 transparent conductive oxide layer based on the microscopic properties computed at the density functional theory level. A maximum efficiency of 27.17 % is obtained by regulating the thickness, electron affinity, and defect density of Ti0.9375Nb0.0625O1.96875S0.03125 layer and the thickness of MASnI3 absorber layer. The findings highlight the tremendous potential of Ti0.9375Nb0.0625O1.96875S0.03125 as an indium-free transparent conductive oxide candidate material for photovoltaic applications.

Spray pyrolysis–deposited NiO film as a hole-injection layer for CsPbBr3 nanocrystal-based light-emitting diodes

In perovskite-based light-emitting diodes (LEDs), employing an inorganic material for the hole-injection layer instead of an organic material is crucial for attaining optimal performance and device stability. This layer needs to exhibit [Formula: see text] -type conductivity with high carrier mobility while being fabricated with a simple and industrially compatible method. In this study, uniform and thin [Formula: see text] -type NiO films were deposited through spray pyrolysis in an air atmosphere. The as-deposited film showed poor crystallinity, and high resistance reduced hole-injection performance. Subsequent thermal treatment at 500∘C enhanced the crystallinity of the layer, reducing resistance and improving LED performance. The film exhibited [Formula: see text] -type semiconductor characteristics, and its carrier mobility, carrier concentration and resistivity were 53.0 × [Formula: see text]cm3, 116cm2⋅ [Formula: see text] and 0.98[Formula: see text] ⋅ [Formula: see text], respectively. Moreover, a compact [Formula: see text] nanocrystal (NC) film as an emitting layer was deposited with a centrifugal coating technique. The resulting LED component featuring a fluoride-doped tin oxide (FTO)/NiO/[Formula: see text] NCs/tris-(1-phenyl-1H-benzimidazole)/LiF/Au structure and demonstrating high luminance, current efficiency and external quantum efficiency (EQE) reached 12,000 cd⋅[Formula: see text], 8.8 cd ⋅ [Formula: see text] and 3.56%, respectively, at 5.5 V. Our work offers a simple and unique approach for accelerating the development of advanced interfacial materials and circumventing major interfacial problems in solution-processed perovskite NC films for high-performance LEDs.

Transparent titanium ions doped lead-borate glasses with optimized persistent optical features for optoelectronic applications

The detection of distinctive optical materials is still under investigation. Hence, here, the melt-quenching approach was used to create a series of PbO–B2O3–TiO2 (PBT) glass materials with improved optical features. The transmittance of this PBT glass system decreased, and its reflectivity increased, through titanium ions doping. Spectrophotometric studies show that the optical bandgap energy of the PBT glasses decreased from 2.60 eV to 2.44 eV, arising from the permitted indirect electronic transitions, whereas the Urbach energy augmented from 0.029 eV to 0.042 eV as the TiO2 content increased. The incorporation of titanium ions into the lead-borate glass improved the behavior of the optical parameters, optical constants, energy loss factor, and dispersion parameters, as well as controlling the sheet resistance, coverage density, figure of merit, and plasma resonance frequency. Additionally, the electronic parameters including the energies of Plasmon, Penn, and Fermi, and the number of active electrons were evaluated. It was theoretically confirmed that the refractive index and band gap were oppositely correlated. Metallization criteria values indicated that these glasses exhibited semiconductor characteristics. Obtained findings revealed that the PBT glasses are suitable for optoelectronic applications. Finally, this work offers meaningful reference for developing optoelectronic properties of glass materials.

Monolayer 1T-Ag6S2 with Excellent Thermoelectric Properties.

We obtained a new material called monolayer 1T-Ag6S2 by replacing metal atoms in 1T phase transition-metal dichalcogenide sulfides (TMDs) with octahedral Ag6 clusters. Subsequently, the thermoelectric transport properties of monolayer 1T-Ag6S2 were systematically investigated using first-principles calculations and the generalized gradient approximation (GGA-PBE) exchange correlation functional. The findings demonstrate that monolayer 1T-Ag6S2 displays characteristics of a wide-bandgap semiconductor, with a bandgap of 2.48 eV. Notably, the incorporation of Ag6 clusters disrupts the structural symmetry, effectively enhancing the electronic structure and phonon properties of the material. Due to the flat valence band near the Fermi level, the extended relaxation time of the hole results in a greater effective mass compared to the electron, leading to a significant increase in the Seebeck coefficient. Under optimal doping conditions, the power factor of monolayer 1T-Ag6S2 can achieve 14.9 mW/mK2 at 500 K. The intricate crystal structure induces phonon path bending, reduces the overall frequency of phonon vibrations (<10 THz), and causes hybridization of low-frequency optical and acoustic branches, resulting in remarkably low lattice thermal conductivity (0.20 and 0.17 W/mK along the x and y axes at 500 K, respectively). The monolayer 1T-Ag6S2 demonstrates a remarkably high figure of merit ZT of 3.14 (3.15) on the x (y) axis at 500 K, significantly higher than those of conventional TMD materials. Such excellent thermoelectric properties suggest that monolayer 1T-Ag6S2 is a promising thermoelectric (TE) material. Our work reveals the deep mechanism of cluster substitution to optimize the thermoelectric properties of materials and provides a useful reference for subsequent research.

Quaternization of porphyrin conjugated organic polymer as an effective photocatalyst for fast degradation of 2,4-D and BPA

Conjugated organic polymers (COPs) originating from porphyrin and perylene bisimide exhibit promising capacity as photocatalysts benefiting from their inherent semiconducting characteristics, but most of them suffer from the hydrophobic properties, which strongly hinder their surface reactions and photocatalytic performance. To solve this problem, the quaternary ammonium groups were introduced into the porous skeleton of a COP-based photocatalyst (PDIN-Py) through Friedel-Crafts alkylation & Menschutkin reactions to yield a super-hydrophilic COP, denoted as PDIN-PyN+. Apart from the hydrophilicity, such post-modification strategy also enhances the visible light utilization, boosts the photogenerated carriers transport and endows PDIN-PyN+ with more positive zeta potential (21.9 mV), thus enhancing the electrostatic interaction with target anionic model pollutants including bisphenol A (BPA) and 2,4-dichlorophenoxyacetic acid (2,4-D) and improving the photocatalytic degradation performance. The removal efficiency (η) of PDIN-PyN+ towards 2,4-D (150 ppm) and BPA (20 ppm) can reach >99 % within 30 min under the irradiation of visible light, and the PDIN-PyN+ also exhibits excellent reusability and withstands various environmental influencing factors, thereby it shows great potential in real-water treatment scenarios.