Semi-insulating Multiple Quantum Research Articles

Erasing of an optically induced grating in a semi-insulating multiple quantum well waveguide

An interaction between optical signal guided in a photorefractive multiple quantum well planar waveguide and two external waves is considered. The external waves create a refractive index grating in the waveguide core which can be applied for frequency selective switching of guided signals. The influence of free carriers generated by the signal wave on the stability of photorefractive grating is analyzed. Full Text:   PDF References D.D. Nolte, "Semi-insulating semiconductor heterostructures: Optoelectronic properties and applications", [CrossRef] M. Wichtowski, A. Ziółkowski, E. Weinert-Rączka, "A general approach to the space–charge field solution in photorefractive materials in a TWM geometry", J. Opt. 12, 065201 (2010) [CrossRef] E. Weinert-Rączka, M. Wichtowski, A. Ziółkowski, G. Staroń, "Photorefractive Grating in Multiple Quantum Well Planar Waveguide", Acta Phys. Pol. A 103, 229 (2003) A. Ziółkowski, E. Weinert-Rączka, "Dark screening solitons in multiple quantum well planar waveguide", [CrossRef] A. Ziółkowski, "Temporal analysis of solitons in photorefractive semiconductors", J. Opt. 14, 035202 (2012) [CrossRef] M. Wichtowski, E. Weinert-Rączka, "Photorefractive Multiple Quantum Well Waveguide as a Bragg Reflector ", Acta Physica Polonica A 103, 239 (2003) Q. Wang, R. M. Brubaker, D. D. Nolte and M. R. Melloch, "Photorefractive quantum wells: transverse Franz—Keldysh geometry", J. Opt. Soc. Am. B 9, 1626 (1992) [CrossRef] D. D. Nolte, D. H. Olson, G. E. Doran, W. H. Knox, A. M. Glass, "Resonant photodiffractive effect in semi-insulating multiple quantum wells", A.M. Glass. J. Opt. Soc. Am. B 7, 2217 (1990) [CrossRef] D.D. Nolte, M. R. Melloch : In: Photorectractive effects and Materials, ed. by D. D. Nolte (Kluwer, Dordrecht 1995) L. F. Magaňa, F. Agulló-López and M. Carrascosa, "Role of physical parameters on the photorefractive performance of semiconductor multiple quantum wells", J. Opt. Soc. Am. B 11, 1651 (1994) [CrossRef] Q. Wang, R. M. Brubaker, D. D. Nolte, "Photorefractive phase shift induced by hot-electron transport: multiple-quantum-well structures", J. Opt. Soc. Am. B 9, 1773 (1994) [CrossRef] P. Vaveliuk, B. Ruiz, N. Bolognini, "Analysis of the steady-state photorefractive harmonic gratings", Phys. Rev. B, 59, 10985 (1999) [CrossRef] D. S. Chemla, D. A. B. Miller, P. W. Smith, A. C. Gossard, W. Wiegmann, "Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structures", IEEE J. Quantum. Electron. 20, 265 (1984) [CrossRef] D.D. Nolte, Q. Wang, "Robust infrared gratings in photorefractive quantum wells generated by an above-band-gap laser", Appl. Phys Lett. 58, 2067 (1991) [CrossRef]

Dark screening solitons in multiple quantum well planar waveguide

The photorefractive response and its effect on light propagation in semi-insulating multiple quantum well structures used as a guiding layer of a planar, single-mode waveguide is investigated. The steady-state relation between the space?charge electric field and light intensity, including the effect of electron transport nonlinearity on the material response, is studied. An analytic solution of the corresponding propagation problem describing dark screening solitons in the photorefractive medium with quadratic electro-optic effect is also found and discussed.

High Spatial Resolution of an Optical Addressing Spatial LightModulator Made by Photorefractive Semi-Insulting Multiple Quantum Wells

We use nondegenerate four-wave mixing to study the spatial resolutionof photorefractive semi-insulating multiple quantum wells grown bymolecular beam epitaxy. By optimizing the experimentalconditions, we have demonstrated that our sample has spatial resolutionup to 2.5 µm, which approaches the theoretical limit. We also analysethe factors that affect the spatial resolution of multiple quantumwells.

Two-Wave Mixing in Resonant Photorefractive GaAs/AlGaAs Semi-insulating Multiple Quantum Wells

We have observed the two-wave mixing of the photorefractive GaAs/AlGaAs semi-insulating multiple quantum wells fabricated by film lift-off approach and protonimplanting technique. Under the non-optimized condition, we have obtained the two-wave mixing gain larger than 180 cm-1 at wavelength near 784 nm for a field of 10 kV/cm. Energy transfer is also observed when the applied field is perpendicular to the grating vector.

Cr-doped GaAs/AlGaAs semi-insulating multiple quantum well photorefractive devices

Semi-insulating multiple quantum well photorefractive devices using GaAs/Al0.29Ga0.71As with an electric field applied perpendicular to the layers are demonstrated. Semi-insulating behavior is obtained by doping with Cr(1016/cm3) during epitaxial growth of the material. Diffraction efficiencies as high as 3% with an applied voltage of 20 V and microsecond response times are obtained in a 2 μm thick device. These devices are of importance for implementation of fast and sensitive two-dimensional optical information processing systems at wavelengths compatible with current diode lasers without the spatial-bandwidth limitations of thick photorefractive materials.

Photoinduced Space-Charge Gratings in Semi-Insulating Multiple Quantum Wells

ABSTRACTHigh-order spatial harmonics of photo-induced space-charge gratings are observed in semi-insulating photorefractive quantum wells. Two-wave mixing combined with four-wave mixing in holographic thin films can provide a versatile probe of absorption and photorefractive gratings.

Resonant photodiffractive effect in semi-insulating multiple quantum wells

We use semi-insulating multiple quantum wells to combine the holographic properties of the photorefractive effect with the large resonant optical nonlinearities of quantum-confined excitons. GaAs–AlGaAs multiple-quantum-well structures are made semi-insulating by proton implantation. The implant damage produces defects that are available to trap and store charge during transient holographic recording by means of coherent excitation. The advantages of charge storage and resonant optical nonlinearity combine to produce new optical devices with large sensitivities. The potential use of these devices for image processing is demonstrated by using the Franz–Keldysh effect in four-wave mixing at wavelengths near 830 nm.