Abstract
We have observed the two-wave mixing of the photorefractive GaAs/AlGaAs semi-insulating multiple quantum wells fabricated by film lift-off approach and protonimplanting technique. Under the non-optimized condition, we have obtained the two-wave mixing gain larger than 180 cm-1 at wavelength near 784 nm for a field of 10 kV/cm. Energy transfer is also observed when the applied field is perpendicular to the grating vector.
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