Self-powered Broadband Research Articles

Facile Synthesis of γ-In2 Se3 Nanoflowers toward High Performance Self-Powered Broadband γ-In2 Se3 /Si Heterojunction Photodiode.

An effective colloidal process involving the hot-injection method is developed to synthesize uniform nanoflowers consisting of 2D γ-In2 Se3 nanosheets. By exploiting the narrow direct bandgap and high absorption coefficient in the visible light range of In2 Se3 , a high-quality γ-In2 Se3 /Si heterojunction photodiode is fabricated. This photodiode shows a high photoresponse under light illumination, short response/recovery times, and long-term durability. In addition, the γ-In2 Se3 /Si heterojunction photodiode is self-powered and displays a broadband spectral response ranging from UV to IR with a high responsivity and detectivity. These excellent performances make the γ-In2 Se3 /Si heterojunction very interesting as highly efficient photodetectors.

A self-powered broadband photodetector based on an n-Si(111)/p-NiO heterojunction with high photosensitivity and enhanced external quantum efficiency

A broadband photodetector based on n-Si(111)/p-NiO heterojunctions not only shows excellent photosensitivity and EQE, but also exhibits outstanding self-powered properties.

Self-powered broadband, high-detectivity and ultrafast photodetectors based on Pd-MoS2/Si heterojunctions.

In this work, a self-powered photodetector device is fabricated through the integration of a palladium-doped molybdenum disulfide thin film on silicon (Pd-MoS2/Si). The substitution of host Mo atoms with Pd dopants in the MoS2 film is revealed by structural and chemical analysis techniques. Due to the incorporation of Pd atoms into the MoS2 films, the photovoltaic characteristics of the fabricated Pd-MoS2/Si device were enhanced largely, promoting its application as a self-powered photodetector operated at zero bias voltage. The obtained results further show that the device is highly sensitive to broadband wavelengths from ultraviolet to near-infrared light (300-1100 nm). In particular, the Pd-MoS2/Si photodetector shows an ultra-high detectivity of ∼10(14) Jones (Jones = cm Hz(1/2) W(-1)), a responsivity of ∼654.0 mA W(-1), and an ultrafast response speed of ∼2.1 μs. The present work opens new avenues for developing high-performance photodetectors for optical communications and imaging techniques as well as optoelectronic circuits.

A high-performance self-powered broadband photodetector based on a CH3NH3PbI3 perovskite/ZnO nanorod array heterostructure

An FTO/ZnO-nanorod/CH3NH3PbI3/MoO3/Au photodetector exhibited high performance and can achieve self-powered, broadband light detection, high detectivity and responsivity, robust and high stability.

Self-powered ultrafast broadband photodetector based on p-n heterojunctions of CuO/Si nanowire array.

A new self-powered broadband photodetector was fabricated by coating an n-silicon nanowire (n-Si NW) array with a layer of p-cupric oxide (CuO) nanoflakes through a new simple solution synthesis method. The p-n heterojunction shows excellent rectification characteristics in the dark and distinctive photovoltaic behavior under broadband light illumination. The photoresponse of the detector at zero bias voltage shows that this self-powered photodetector is highly sensitive to visible and near-infrared light illuminations, with excellent stability and reproducibility. Ultrafast response rise and recovery times of 60 and 80 μs, respectively, are shown by the CuO based nanophotodetector. In addition, the broadband photodetector can also provide a rapid binary response, with current changing from positive to negative upon illumination under a small bias. The binary response arises from the photovoltaic behavior and the low turn-on voltage of the CuO/Si NW device. These properties make the CuO/Si NW broadband photodetector suitable for applications that require high response speeds and self-sufficient functionality.