Device quality material of InP based HEMTs and MSM photodetectors has been demonstrated by solid source selective MBE growth process. Lattice matched In 0.52Al 0.48As/In 0.53Ga 0.47As/InP HEMTs, fabricated on selective grown areas, have demonstrated a two-dimensional electron sheet charge density of 3.4×10 12 cm -2 and a room-temperature electron mobility of 10,200 cm 2/V·s. A typical 0.15 μm gate length device exhibits an extrinsic transconductance, g m, of 900 mS/mm with an extrinsic current gain cut-off frequency of over 170 GHz. From the same MBE wafer, a 0.25 μm feature size photodetector, fabricated on a separately grown MSM epitaxial layer, has achieved a photoresponsivity of 0.38 A/W and a frequency response of up to 50 GHz. These results demonstrate the feasibility of using the selective MBE growth technique to integrate high performance InAlAs/In GaAs/InP microwave and opto-electronic devices for ultra-high frequency OEIC applications.