Selective Area Growth Technique Research Articles

Observation of stimulated emission, line narrowing,and red shift ofemission peak from optically-pumped rectangular cross-sectional GaNoptical waveguides fabricated by selective growth

The authors examined low-loss III-V nitride optical waveguides for fabrication on sapphire substrates for active devices using a selective-area growth technique. A rectangular cross-section waveguide can be created by adjusting crystal growth conditions. A stimulated emission peak at 362 nm, line narrowing, and a red shift were observed from the selectively grown GaN waveguides by optical pumping.

Tapered thickness MQW waveguide BH MQW lasers

We propose and demonstrate a novel 1.3 μm InGaAsP/InGaAsP multiple-quantum-well (MQW) BH Fabry-Perot laser diode monolithically integrated with a MQW tapered thickness waveguide. A selective area growth (SAG) technique is used to fabricate the tapered thickness waveguide with low absorption loss and to integrate it with the MQW gain region with a high coupling efficiency. We achieve very narrow vertical and lateral far-field FWHM of 11.8/spl deg/ and 8.0/spl deg/, with low threshold current of 19 mA and high slope efficiency of 0.25 mW/mA.

Novel structure MQW electroabsorption modulator/DFB-laser integrated device fabricated by selective area MOCVD growth

A novel structure electroabsorption modulator/DFB laser integrated device is proposed and demonstrated. Both functional devices consist of MQW structures with different quantum energy levels, which are automatically formed in the same MOCVD run by using a selective area growth technique. A fundamental modulation with a 12.6dB extinction ratio is demonstrated.

High-power broad-area lasers fabricated by selective area growth

High-power broad-area stripe lasers have been fabricated by using a one-step selective area growth technique in the metalorganic chemical vapor deposition system. This technique provides devices with excellent control both on electrical and optical confinements. cw output power of more than 350 mW/facet (700 mW total) was achieved, and a differential quantum efficiency of 0.625 mW/mA/facet (1.25 mW/mA total) was observed.

Index guided single stripe lasers fabricated by selective area growth in a metalorganic chemical vapor deposition system

Index guided single stripe lasers have been fabricated by using a one-step selective area growth technique in the metalorganic chemical vapor deposition system. By pyrolytically depositing SiO or SiO2 layers on GaAs substrate, and lithographically defining the stripes, single stripe heterostructure lasers can be achieved on the uncovered substrate while polycrystalline films are observed beyond the stripe regions. The device operated with a single spatial mode for up to more than three times the threshold current.