Scientists experience formidability in developing an advanced materials capable to withstand extreme environmental circumstances without sacrificing its fundamental properties. In this realm, solid-state devices utilizing 'metal dichalcogenide' materials offer significant advantages for cryogenic purposes, but rarely explored. In this study, thin film photodetectors (TFPDs) based on meta-materials of PdxSn1−xSe2 (x=0.0, 0.2, 0.5) nanosheets are introduced. Nanosheets are extracted from bulk via sonochemical exfoliation to fabricate TFPDs. Novel material Pd0.5Sn0.5Se2 grown by 50 % palladium enrichment in SnSe2 exhibits polymorphism comprising structural duality of hexagonal-orthorhombic phases. TFPDs based on PdxSn1−xSe2 (x=0.0, 0.2, 0.5) nanosheets display substantial photoresponse in which TFPD functionalised by Pd0.5Sn0.5Se2 nanosheets portrays superior photodetection. Raman peak demonstrates notable thermal-sensing through blue-shifting and sharpening under cryogenic-temperatures. Surprisingly, Pd0.5Sn0.5Se2 nanosheets based TFPD reveals considerable photodetection, achieving 0.52 mAW−1 responsivity at 10 K cryogenic-temperature. To the best of our knowledge, present investigation surpasses previous reports, highlighting a thin film-based photo detector that represents exceptional responsivity at 10 K cryogenic-temperature reported by us for the first time. As an outcome of present study, a TFPD based on Pd0.5Sn0.5Se2 nanosheets emerges as advanced cryotronic material for designing next-generation cryogenic photonic devices due to its higher steadiness, excellent reproducibility and operational efficiency at cryogenic-temperature of 10 K.
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