The adsorption of chlorine on GaAs(100)-c(8 × 2) surfaces was investigated by high-resolution electron energy loss spectroscopy (HREELS), X-ray photoelectron spectroscopy (XPS) and low-energy electron diffraction (LEED). Chlorine molecules were released from an electrochemical AgAgCl-graphite cell. For the clean c(8 × 2)-reconstructed surface, besides the well-known Fuchs-Kliewer phonon of GaAs at 35.8 meV, two further surface phonons are observed at 7.9 and 11.5 meV. They can be characterized by comparison with the volume phonon dispersion curves of GaAs in the high-symmetry directions of the Brillouin zone. After chlorine exposure, the XPS measurements show an etching process which removes gallium atoms from the surface. With HREELS three adsorbate-induced loss features at 18, 43 and 46 meV are found. Comparing the loss energies with vibrational energies of AsClBr 2, GaCl and GaCl 2 suggests the attribution of the loss features to the GaCl valence vibration (46 meV) and the GaCl 2 scissor mode (18 meV) for small chlorine exposures, and to the AsCl stretching vibration (43 meV) in the high exposure regime when etching occurs.