Schottky Diodes Research Articles

Frequency-dependent dielectric, electric modulus, and ac conductivity features of Au/n-Si Schottky diodes (SDs) with PVC and (PVC:Graphite/Graphene-Oxide) interlayer

To determine the interlayer effect on dielectric features and conductivity, Au/n-Si (S0), Au/PVC/p-Si (S1), and Au/PVC:Gt-GO/p-Si (S2) type SDs were grown onto the same n-Si wafer and their admittance measurements performed between 100 Hz and 1 MHz. The observed decrease in C and G/ω values as frequency increases shows that the charges at the interface-states (N ss) can easily follow ac-signal and supply an excess capacitance and conductance at lower frequencies. Using C and G/ω data at 1.5 V, the dielectric-constant (ϵ′), dielectric-loss (ϵ″), and loss-tangent (tan δ) were obtained as a function of frequency. To determine the relaxation processes in (PVC:Gt-GO) nanocomposite, complex-dielectric (M′ and M′′) formalism was also explored in the whole frequency range. The value of ac electrical conductivity (σ ac) remained independent of frequency until 0.1 MHz and then started to increase exponentially which corresponds to dc and ac conductivity. As compared to S1 and S2 with So SD, the conductivity and ϵ′ values increase due to the PVC and (PVC:Gt-GO) interlayer. The Ln(σ ac)-Ln(ω) plots were also drawn to analyze the conduction process and their slopes were found as 0.09, 0.39, and 0.58 for S0, S1, and S2 SD, respectively. These results show that the interaction and trap levels of the electron–hole pairs at lower frequencies, as well as from the well-localized relaxation mechanism at higher frequencies.

Vertical Schottky diode on (113) oriented homoepitaxial diamond

Vertical Schottky diodes were fabricated on (113) oriented diamond substrates produced from thick heavily boron doped (NA ∼ 3.5 × 1020 cm−3) diamond layers grown on HPHT-grown synthetic Ib diamond crystals. The p+-substrates were overgrown by a low doped p-epilayer whose surface layer was compensated up to the depth of 0.1 to 0.3 μm. The surface was then oxygen terminated and covered by evaporated Mo/Au Schottky contacts. The bottom ohmic contact to p+-substrate was formed by Ti/Au bi-layer. Current- and capacitance-voltage characteristics of the realized diodes were measured at temperatures ranging from 25 to 180 °C. At room temperature, the realized diodes show high forward current densities JF = 100 A/cm2 and low differential ON-state specific resistance Ron_sp = 3.7 mΩ.cm2 at forward voltage VF = 4 V and a very low leakage (JR < 10−9 A/cm2) in the blocking regime. At 180 °C, forward characteristics significantly improve (JF = 5 kA/cm2, Ron_sp = 0.2 mΩ.cm2 at VF = 4 V) while the blocking characteristics remain almost unchanged (JR = 6 × 10−8 A/cm2 at VR = 4 V). The breakdown electric field is about 3 MV/cm and the rectification ratio keeps at the level of 1011. Characteristics of realized diodes, which are fully comparable to those of Schottky-pn diodes prepared on (111) oriented boron doped diamond, confirm the suitability of (113) orientation for realization of vertical diamond power devices.

Synthesis of 2D yttrium zinc oxide nanosheets via simple chemical route toward high performance Schottky diode based on large charge carriers density and photoresponsivity

Abstract Yttrium zinc oxide (Zn0.85Y0.15O) nanostructures were stoichiometrically prepared by co-precipitation method. XRD, EDX, XPS, SEM, and TEM spectroscopy were examined to investigate structure, composition, and morphological characteristics. The synthesized nanocomposite exhibited polycrystalline structure with small crystallite size ~ 27 nm in which the particles appeared in sheets like shape with high atomic density on surface. The optical parameters including energy gap (Eg) and refractive index (n) were investigated from (T%) and (R%) measurements through wavelength range from 300-900 nm. Al/Y:ZnO/p-Si/Ag Schottky diode was fabricated using thermal evaporating technique and its current-voltage (I-V) was analyzed using different models. The photodiode showed non-ideal behavior with ideality factor greater than unity and small potential barrier. Under various illuminations, the photodiode has revealed high photosensitivity attributed to trapped charge carriers at the interface. The charge carrier density Nd and built-in voltage Vbi were estimated from Mott Schottky (M-S) function suggesting high Schottky diode efficiency.&amp;#xD;

Design and optimization of a miniaturized dual band rectenna for wireless power transfer applications

This paper presents the design of a compact printed rectenna circuit suitable for wireless power transfer applications at frequencies 900 MHz and 1450 MHz. The rectenna circuit consists of a rectangular patch antenna measuring 17.7 x 8.85 mm2, printed on a Rogers RO4003 substrate. It also includes a voltage doubler (VD) circuit comprising Schottky diodes (SMS7631) and an impedance-matching circuit. The design and optimization of the antenna are performed using Ansys HFSS software, while the DC and RF features of the VD circuit are analyzed using the Advanced Design System (ADS) software. The circuit design is presented in two stages: one for single-frequency operation at 900 MHz and another for dual-band operation at 900 and 1450 MHz. The design of single-stage and double-stage VD for dual-band operation is also discussed in this paper. The rectenna's Power Conversion Efficiency (PCE) is evaluated under various load and input power conditions. The maximum DC output voltage measured is 5.318 V at 900 MHz and 5.52 V at 1450 MHz. Furthermore, the maximum PCE achieved is 53% and 54% for 900 MHz and 1450 MHz respectively. These values are obtained with a RF input power level of 20 dBm and a load resistance of 10 KΩ.

The effect of FeGa (0/–) level presence on material properties in dilute AlxGa1−xN layers

AlxGa1−xN epilayers are used as the basis of ultraviolet LEDs and detectors. The trap states produced by defects and impurities can play a key role in the device performance. In this work, conventional deep-level transient spectroscopy, photoluminescence (PL), and secondary ion mass spectrometry have been used to characterize a deep-level trap termed as E3 in dilute AlxGa1−xN (x &amp;lt; 0.063) epilayers grown by metal-organic vapor phase epitaxy (MOVPE) on highly conductive ammono-GaN substrates. The AlxGa1−xN epilayers were doped with silicon to about 3 × 1016 cm−3. The electrical and the optical measurements were conducted on Ni/Au Schottky barrier diodes and virgin samples, respectively. First, we observed a general trend that the E3 (FeGa) electron trap concentration significantly changes along the wafers in AlxGa1−xN layers that is fully consistent with previously reported results for GaN materials grown by the MOVPE technique. Second, we report that the activation energies for electron emission for the E1 and E3 traps in dilute AlxGa1−xN exhibit linear variations with Al content. Moreover, low-temperature PL results show a proportional relation between the intensity of the line with its maximum at 1.299 eV and concentration of residual Fe impurity. Finally, we discuss how the presence of defects resulting from Fe contamination may result in degradation of AlxGa1−xN-based devices.

Investigation of hybrid CuPc-doped ZnO/p-silicon photodiodes for photonic and electronic applications

Copper phthalocyanine (CuPc) doped zinc oxide (ZnO) interlayered Al/p-Si Schottky barrier diodes (SBDs) were systematically fabricated utilizing spin coating technique. This study was undertaken to meticulously assess the influence of varying concentrations of CuPc on the intricate electrical and photodiode characteristics of these devices. The investigation involved the characterization of the current–voltage (I–V) characteristics configured with distinct different doping concentrations of CuPc such as 0.05 wt%,1 wt%, 2 wt%, under a wide range of voltages (± 5 V) and illumination irradiances. These measurements enabled the calculation of various critical electrical variables, such as the ideality factor (n), barrier height (ΦB), series resistance (Rs), shunt resistance (Rsh), interface states density (Nss) and their response under various illumination levels (between 10 and 100 mW/cm2) and under dark condition. An increase in the reverse current as the illumination increases suggested the potential utility of these SBDs as photodiodes, photosensors, or photodetectors. Notably, the linear dynamic range (LDR), a crucial factor for image sensors which obtained around 14 for all photodiodes. The photodiodes exhibited a good rectification ratio (RR) of approximately 104. The results obtained indicate that the rectifying properties of the structures can be controlled by CuPc doping. In addition, the results indicated that the presence of CuPc significantly influenced the values of n, ΦB, Rs/Rsh, and Nss. To further analyze the devices, capacitance–voltage (C–V) and conductance–voltage (G–V) measurements were carried out to determine parameters such as diffusion potential (VD), dopant acceptor atoms concentration (NA), Fermi energy level (EF), and width of depletion layer (WD) at both 1 kHz and 1 MHz. The measurements revealed that the capacitance values were higher at low frequencies compared to high frequencies, and this behavior was attributed to Nss. In summary, this study suggests that the manufactured photodiodes have the potential to be employed as photodiodes, sensors, or detectors in optical sensing applications, and their performance can be tailored by adjusting the concentration of CuPc in the ZnO interlayered structures. The discerned outcomes revealed the substantial influence of CuPc concentration on key electrical parameters, with conspicuous trends noted in the values of n, ΦB, Rs/Rsh, and Nss. Furthermore, the observed increase in the reverse current as the illumination level increases highlights the potential utility of these SBDs as sensitive photodiodes/sensors/detectors.

Synaptic Behavior in Analog Memristors Based on Green-Synthesized ZnO Nanoparticles

In this work, spherical-like ZnO nanoparticles (NPs) were synthesized via avocado seed extract and calcinated at 400 °C, which exhibited a hexagonal wurtzite structure with an average size of around 42 nm. The chemical states, organic residuals, and defects were confirmed by X-ray photoelectron spectroscopy (XPS). The ZnO NPs-based memristors exhibited remarkably stable analog switching, over 300 continuous cycles, and a wide operating window of 400. Moreover, the asymmetry in the current observed was attributed to the self-rectifying nature of this device, comprising one analog memristor and one Schottky diode (1D–1R). By controlling the peak voltage to 4 V and applying 50 bias pulses, it was possible to effectively replicate the key features of synaptic behavior, including potentiation and depression, through current modulation.

First-principles investigations and MOCVD growth of Si-doped β-Ga2O3 thin films on sapphire substrates for enhancing Schottky barrier diode characteristics

In the realm of high-power electronics, the potential of gallium oxide (β-Ga2O3) as a front-runner material has garnered significant attention due to its wide bandgap and the capacity to withstand high critical electric fields. To push the boundaries of performance for β-Ga2O3 devices, a meticulous exploration into the effects of silicon (Si) doping on β-Ga2O3 films was carried out using the metalorganic chemical vapor deposition (MOCVD) technique with various tetraethoxysilane (TEOS) flow rates (0–30 sccm). The Si-doped β-Ga2O3 films were systematically studied and characterized using XRD, SEM, and XPS techniques. XRD patterns demonstrated the preservation of the β-Ga2O3 monoclinic structure in the Si-doped β-Ga2O3 films, without any evidence of secondary phases. In addition to this, first-principles calculations were performed to explore the incorporation of Si atoms in Ga2O3 supercells, which revealed the preference of Si atoms to occupy substitutional Ga tetrahedral sites within the Ga2O3 lattice. Through the utilization of Si-doped β-Ga2O3 films, a unique design of donut-shaped Schottky barrier diode (SBD) was successfully engineered. Remarkably, the Si-doped β-Ga2O3 SBD (employed with 20 sccm TEOS flow rate) exhibited the breakdown voltage (Vbr) of 497 V and Baliga's Figure of Merit (BFOM) value of 1.16 kW/cm2, which is five-order higher BFOM compared to undoped β-Ga2O3 SBD. This substantial improvement in BFOM underscores the significant potential of Si-doped β-Ga2O3 films for high-power electronics, opening avenues for enhanced device efficiency and capabilities.

Reliability Improvement of Grid Connected PV Inverter Considering Monofacial and Bifacial Panels Using Hybrid IGBT

The development of bifacial photovoltaics has led to significant advancements in solar energy. Unlike traditional solar panels, which only generate electricity from the front side, these panels capture the energy from the rear and front surfaces. Bifacial photovoltaics utilize a dual-sided absorption to capture the sunlight that falls on nearby structures and the ground. This technology helps boost their efficiency and makes them an economical and sustainable choice. Furthermore, the increased energy production from the rear side of bifacial panels may lead to higher voltage fluctuations, which affects the thermal stability of PV inverter. Nevertheless, PV inverter is regarded as critical component which affects the reliability performance. Hence in this paper reliability improvement methodology with hybrid IGBT is proposed for the PV inverter. The hybrid IGBT consists of Silicon (Si) IGBT and Silicon Carbide (SiC) Schottky diode. A test case of 3-kW Monofacial and Bifacial grid connected PV inverter system with various albedos is considered. Mission profile for one year at Hyderabad, India location is logged for the assessment. B10 lifetime is calculated for the proposed hybrid IGBT. The effectiveness of the proposed hybrid IGBT is evaluated in comparison with conventional IGBT. The proposed hybrid IGBT significantly improves the reliability performance of the PV inverter.

Rectenna System Development Using Harmonic Balance and S-Parameters for an RF Energy Harvester.

With the escalating demand for Radio Frequency Identification (RFID) technology and the Internet of Things (IoT), there is a growing need for sustainable and autonomous power solutions to energize low-powered devices. Consequently, there is a critical imperative to mitigate dependency on batteries during passive operation. This paper proposes the conceptual framework of rectenna architecture-based radio frequency energy harvesters' performance, specifically optimized for low-power device applications. The proposed prototype utilizes the surroundings' Wi-Fi signals within the 2.4 GHz frequency band. The design integrates a seven-stage Cockroft-Walton rectifier featuring a Schottky diode HSMS286C and MA4E2054B1-1146T, a low-pass filter, and a fractal antenna. Preliminary simulations conducted using Advanced Design System (ADS) reveal that a voltage of 3.53 V can be harvested by employing a 1.57 mm thickness Rogers 5880 printed circuit board (PCB) substrate with an MA4E2054B1-1146T rectifier prototype, given a minimum power input of -10 dBm (0.1 mW). Integrating the fabricated rectifier and fractal antenna successfully yields a 1.5 V DC output from Wi-Fi signals, demonstrable by illuminating a red LED. These findings underscore the viability of deploying a fractal antenna-based radio frequency (RF) harvester for empowering small electronic devices.

Effect of 1 wt% Dimethyl Sulfoxide on the Electrical and Photovoltaic Parameters of Schottky Diodes and Organic Solar Cells Based on PEDOT:PSS

Herein, the electrical conductivity of poly(3,4‐ethylenedioxythiophene)–poly(styrenesulfonate) (PEDOT:PSS) polymer is improved by adding dimethyl sulfoxide (DMSO) and electrical characterization of the obtained Schottky diode and organic solar cell (OSC) devices are performed from I–V measurements under the light and dark conditions. The scanning electron microscope images of the poly(3‐hexylthiophene):[6,6]‐phenylC61‐butyric acid methylester active layer and PEDOT:PSS layer are obtained. The series resistance (Rs), barrier height (Фb), and ideality factor (n) parameters are obtained from different techniques as a function of light and dark conditions. Furthermore, photovoltaic parameters are calculated for n‐Si/PEDOT:PSS/Au device without DMSO doping and with DMSO doping as a parameter of the light condition and the interface state densities of these devices are obtained for light and dark conditions. DMSO organic solvent improves the short‐circuit current density (Isc), power convert efficiency (or η), open circuit‐voltage (Voc), shunt resistance (Rsh), and series resistance (Rs) values of OSCs. In summary, DMSO solvent rearranges the conductive of PEDOT:PSS, decreases the work function of this conductive polymer (≈5 eV), decreases energy loss in the charge transportation, and increases photovoltaic parameters of Schottky barrier diode and OSC devices.

Comparative Study on Schottky Contact Behaviors between Ga- and N-Polar GaN with SiNx Interlayer

We conducted a comparative study on the characterization of Ga-polar and N-polar GaN metal–insulator–semiconductor (MIS) Schottky contact with a SiNx gate dielectric. The correlation between the surface morphology and the current–voltage (I–V) characteristics of the Ga- and N-polar GaN Schottky contact with and without SiNx was established. The insertion of SiNx helps in reducing the reverse leakage current for both structures, even though the leakage is still higher for N-polar GaN, consistent with the Schottky barrier height calculated using X-ray photoelectron spectroscopy. To optimize the electric property of the N-polar device, various substrate misorientation angles were adopted. Among the different misorientation angles of the sapphire substrate, the GaN MIS Schottky barrier diode grown on 1° sapphire shows the lowest reverse leakage current, the smoothest surface morphology, and the best crystalline quality compared to N-polar GaN grown on 0.2° and 2° sapphire substrates. Furthermore, the mechanism of the reverse leakage current of the MIS-type N-polar GaN Schottky contact was investigated by temperature-dependent I–V characterization. FP emissions are thought to be the dominant reverse conduction mechanism for the N-polar GaN MIS diode. This work provides a promising approach towards the optimization of N-polar electronic devices with low levels of leakage and a favorable ideality factor.

Impact of Surface States in Graphene/p-Si Schottky Diodes.

Graphene-silicon Schottky diodes are intriguing devices that straddle the border between classical models and two-dimensional ones. Many papers have been published in recent years studying their operation based on the classical model developed for metal-silicon Schottky diodes. However, the results obtained for diode parameters vary widely in some cases showing very large deviations with respect to the expected range. This indicates that our understanding of their operation remains incomplete. When modeling these devices, certain aspects strictly connected with the quantum mechanical features of both graphene and the interface with silicon play a crucial role and must be considered. In particular, the dependence of the graphene Fermi level on carrier density, the relation of the latter with the density of surface states in silicon and the coupling between in-plane and out-of-plane dynamics in graphene are key aspects for the interpretation of their behavior. Within the thermionic regime, we estimate the zero-bias Schottky barrier height and the density of silicon surface states in graphene/type-p silicon diodes by adapting a kown model and extracting ideality index values close to unity. The ohmic regime, beyond the flat band potential, is modeled with an empirical law, and the current density appears to be roughly proportional to the electric field at the silicon interface; moreover, the graphene-to-silicon electron tunneling efficiency drops significantly in the transition from the thermionic to ohmic regime. We attribute these facts to (donor) silicon surface states, which tend to be empty in the ohmic regime.

Trap states and carrier diffusion lengths in NiO/β-Ga2O3 heterojunctions

We report the electrical properties, deep trap spectra, and diffusion lengths of non-equilibrium carriers in Ni Schottky diodes and NiO/Ga2O3 heterojunctions (HJs) prepared on the same n−/n+ β-Ga2O3 epi structures. The heterojunctions decrease the reverse current of Ga2O3 high-power rectifiers. In HJs, in contrast to Schottky diodes, the capacitance and AC conductance show a prominent frequency and temperature dependence, suggesting the presence of two temperature activation processes with activation energies of 0.17 and 0.1 eV. The deep trap spectra of the Schottky diodes and HJs differ by the absence in the HJ of deep electron traps E2* with level near Ec − 0.7 eV considered to be an important center of non-radiative recombination. This correlates with the observed increase in the diffusion length of non-equilibrium charge carriers in the HJs to 370 nm compared to 240 nm in the Schottky diodes. The diffusion length of charge carriers in p-NiO was found to be quite short, 30 nm. Possible reasons for the observed differences and possible origin of the minority-trap-like feature commonly reported to be present in the deep level spectra of HJs and also observed in our experiments are discussed.

Electrical, structural and photovoltaic properties of acceptor dye modified Au/n-Ge heterostructure

n-Ge heterostructure is fabricated using organic dye interlayers such as sulforhodamine-G (SRG) using low-cost spin coating technique and explored its electrical and structural features. The I–V measurements of the Au/SRG/n-Ge heterostructure (HJ) show good rectification behavior. It has been noticed that the barrier height (0.73 eV) of the Au/SRG/n-Ge heterojunction was significantly higher than the Au/n-Ge Schottky diode (SD) (0.63 eV). Cheung's function and the Norde method has been utilized to evaluate the various barrier parameters to understand the non-ideal behavior of the contacts at higher bias region. The low value of the series resistance for HJ (53 Ω) is observed than compared to the SD without organic dye (2974 Ω). Barrier parameters evaluated from the Norde method were compared with those from the Cheung method and found that they confirmed the consistency of Schottky barrier parameters obtained from both techniques. The transport properties of the HJ and SD in the forward bias region are evaluated using the log (I) vs. log (V) plot. At larger forward bias voltages, a change in the drift of current conduction is observed from Ohmic current conduction to traps-assisted SCLC conduction. This may be ascribed to the presence of defects or traps at the n-Ge and SRG interface possibly associated with the organic dye. Also, the photovoltaic properties of the SRG/n-Ge heterostructures were evaluated at 100 mW/cm2 showing significant photoresponse indicates the usage of SRG dyes in photosensitive applications.

In situ electrical characterization of the Au/n-Si Schottky barrier structure under 1.2 MeV Ar ion irradiation

Understanding the impact of energetic ion irradiation on semiconductor materials and devices is essential for optimizing their electronic applications. This knowledge contributes to the broader goal of tailoring material properties to enhance the overall performance and reliability of semiconductor devices. In this study, we investigate the impact of 1.2 MeV Ar8+ irradiation on Au/n-Si Schottky barrier structures in-situ, as a function of ion irradiation fluence. Electrical characterization was performed in-situ on a single sample to mitigate any variability in device parameters between samples. It is observed that ion irradiation results in an increased Schottky barrier height with a reduction in reverse leakage current. The behavior is attributed to dopant deactivation by the energetic ion irradiation-induced defects near the interface. These results underscore the importance of understanding ion irradiation impacts on semiconductor devices, providing valuable insights for optimizing Schottky diodes in electronic applications.

Mitigating reverse recovery power losses in MOSFET switching cell using extra Schottky diodes—Application to voltage source inverter

This article introduces a comparative study of the losses in Voltage Source Inverter (VSI) based on Metal-Oxide- Semiconductor Field-Effect Transistors (MOSFETs) depending on whether or not the latter are associated with antiparallel diodes. These diodes are optional because MOSFETs have an intrinsic diode capable of conducting reverse currents when their channel is in OFF state. However, it induces additional reverse recovery losses and damaging voltage overshoots. This undesired circumstance occurs during the mandatory switching cell dead-time and is accurately modelled and assessed in this study. Conversely, Schottky diodes feature almost zero reverse recovery losses. Hence, combining each MOSFET with an antiparallel Schottky diode may reduce the converter overall losses. To assess this strategy, an analytical model of the charge stored within the body diode is developed and then compared to experiments using the Double Pulse Test (DPT). It reveals accurate and well suited because it requires only two constant macro parameters which permits to forecast the reverse recovery losses over a wide range of operating conditions, namely switched current, current slope and dead time duration. The selected model is applied in the case where a Schottky diode is placed antiparallel to the MOSFET. It then appears clearly that the interest of such a combination depends on the static characteristics of both the MOSFET and the Schottky diode. This output is a noteworthy point for power electronics designers. Finally, the developed model is applied in the standard use case of the Voltage Source Inverter (VSI). The results reveal the advantage of the suggested model in this use case because the current evolves significantly over time. The outcome of this VSI analysis shows that a significant recovery losses decrease is achieved with good sizing fit between the MOSFET transistor and the additional Schottky diode.

Machine learning-based method for predicting C–V-T characteristics and electrical parameters of GaAs/AlGaAs multi-quantum wells Schottky diodes

In this work, two models of artificial neural networks are developed to predict the electrical parameters and capacitance-voltage characteristics of GaAs/AlGaAs multi-quantum wells Schottky diodes at different temperatures. Capacitance-Voltage-Temperature (C–V-T) characteristics for voltages and temperatures in the ranges (-4 V–0 V) and (20 K–400 K), respectively, were used to assess the effectiveness of the proposed approach. The first model (Model 1) is used to evaluate how well the neural network predicts the C–V-T characteristics. The second simulation, known as Model 2, was constructed to simultaneously overcome the problems of determining the electrical parameters and predicting C–V-T characteristics. Model 2 allows the calculation of the built-in voltage, effective density, and capacitance. Three-fold cross-validation and mean square error are used to assess the effectiveness of the developed models. The results clearly demonstrate the high prediction accuracy of the electrical parameters and C–V characteristics at all temperatures. After training, Model 1 Mean Square Error performance is 1.5033×10−6 at 1450 epochs, whereas Model 2 MSE is 4.9951×10−6 at 642 epochs. According to the error distribution frequency histogram, about 95 % of errors for Model 1 and Model 2 lie between [0.00535 and 0.005608] and [0.00328 and 0.00333], respectively. The R-values that correspond to the training and validation datasets for both models are close to one (0.9999). Parameters determination results have been compared against those obtained using ant lion optimizer based method. It was found that the results obtained from the neural networks models strongly agree with the experimental data.

Design Strategy of Vertical GaN Power Schottky Barrier Diodes with p‐GaN Junction Termination Extension and Experimental Demonstration of Selective p‐Doping by Implantation

Design Strategy of Vertical GaN Power Schottky Barrier Diodes with p‐GaN Junction Termination Extension and Experimental Demonstration of Selective p‐Doping by Implantation

Investigation into the impact of bulk defects in drift layer on the electrical properties for GaN-based trench Schottky barrier diodes

Investigation into the impact of bulk defects in drift layer on the electrical properties for GaN-based trench Schottky barrier diodes