Abstract
Investigation into the impact of bulk defects in drift layer on the electrical properties for GaN-based trench Schottky barrier diodes
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https://doi.org/10.35848/1347-4065/ad40eb
Copy DOIJournal: Japanese Journal of Applied Physics | Publication Date: Apr 19, 2024 |
Investigation into the impact of bulk defects in drift layer on the electrical properties for GaN-based trench Schottky barrier diodes
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