Scandium Doped Aluminum Nitride Research Articles

A High-Sensitivity MEMS Accelerometer Using a Sc0.8Al0.2N-Based Four Beam Structure.

In this paper, a high-sensitivity microelectromechanical system (MEMS) piezoelectric accelerometer based on a Scandium-doped Aluminum Nitride (ScAlN) thin film is proposed. The primary structure of this accelerometer is a silicon proof mass fixed by four piezoelectric cantilever beams. In order to enhance the sensitivity of the accelerometer, the Sc0.2Al0.8N piezoelectric film is used in the device. The transverse piezoelectric coefficient d31 of the Sc0.2Al0.8N piezoelectric film is measured by the cantilever beam method and found to be -4.7661 pC/N, which is approximately two to three times greater than that of a pure AlN film. To further enhance the sensitivity of the accelerometer, the top electrodes are divided into inner and outer electrodes; then, the four piezoelectric cantilever beams can achieve a series connection by these inner and outer electrodes. Subsequently, theoretical and finite element models are established to analyze the effectiveness of the above structure. After fabricating the device, the measurement results demonstrate that the resonant frequency of the device is 7.24 kHz and the operating frequency is 56 Hz to 2360 Hz. At a frequency of 480 Hz, the sensitivity, minimum detectable acceleration, and resolution of the device are 2.448 mV/g, 1 mg, and 1 mg, respectively. The linearity of the accelerometer is good for accelerations less than 2 g. The proposed piezoelectric MEMS accelerometer has demonstrated high sensitivity and linearity, making it suitable for accurately detecting low-frequency vibrations.

A miniaturized transit-time ultrasonic flowmeter based on ScAlN piezoelectric micromachined ultrasonic transducers for small-diameter applications

Transit-time ultrasonic flowmeters (TTUFs) are among the most widely used devices for flow measurements. However, traditional TTUFs are usually based on a bulk piezoelectric transducer, which limits their application in small-diameter channels. In this paper, we developed a miniaturized TTUF based on scandium-doped aluminum nitride (ScAlN) piezoelectric micromachined ultrasonic transducers (PMUTs). The proposed TTUF contains two PMUT-based transceivers and a π-type channel. The PMUTs contain 13 × 13 square cells with dimensions of 2.8 × 2.8 mm2. To compensate for the acoustic impedance mismatch with liquid, a layer of polyurethane is added to the surface of the PMUTs as a matching layer. The PMUT-based transceivers show good transmitting sensitivity (with 0.94 MPa/V surface pressure) and receiving sensitivity (1.79 mV/kPa) at a frequency of 1 MHz in water. Moreover, the dimensions of the π-type channel are optimized to achieve a measurement sensitivity of 82 ns/(m/s) and a signal-to-noise ratio (SNR) better than 15 dB. Finally, we integrate the fabricated PMUTs into the TDC-GP30 platform. The experimental results show that the developed TTUF provides a wide range of flow measurements from 2 to 300 L/h in a channel of 4 mm diameter, which is smaller than most reported channels. The accuracy and repeatability of the TTUF are within 0.2% and 1%, respectively. The proposed TTUF shows great application potential in industrial applications such as medical and chemical applications.

ScAlN Film-Based Piezoelectric Micromechanical Ultrasonic Transducers with Dual-Ring Structure for Distance Sensing

Piezoelectric micromechanical ultrasonic transducers (pMUTs) are new types of distance sensors with great potential for applications in automotive, unmanned aerial vehicle, robotics, and smart homes. However, previously reported pMUTs are limited by a short sensing distance due to lower output sound pressure. In this work, a pMUT with a special dual-ring structure based on scandium-doped aluminum nitride (ScAlN) is proposed. The combination of a dual-ring structure with pinned boundary conditions and a high piezoelectric performance ScAlN film allows the pMUT to achieve a large dynamic displacement of 2.87 μm/V and a high electromechanical coupling coefficient (kt2) of 8.92%. The results of ranging experiments show that a single pMUT achieves a distance sensing of 6 m at a resonant frequency of 91 kHz, the farthest distance sensing registered to date. This pMUT provides surprisingly fertile ground for various distance sensing applications.

Development of high uniformity Al1-xScxN piezoelectric film stack dry etching process on 8-inch silicon wafers

This paper have investigated the basic properties of inductively coupled plasma reactive ion etching (ICP-RIE) of scandium doped aluminum nitride (Al1-xScxN) thin films on 8-inch silicon wafers, and presented a pretreatment scheme which can effectively improve the etching uniformity and wafer yield in the mass fabrication of Al1-xScxN-MEMS (micro-electromechanical systems) devices. Based on BCl3/Ar pretreatment and Cl2/Ar main etching scheme, an etching rate of 128 nm/min is obtained, with the low nonuniformity, and selectivity of 1.8 with respect to the loss of molybdenum (Mo) electrode is achieved, respectively. The relationship between etching parameters and etching uniformity is revealed in detail by the 5-step Al1-xScxN etching model. Meanwhile, to optimize the etching compatibility in the fabrication of Al1-xScxN-piezoelectric MEMS devices, a variety of etching masks (e.g. photoresist and silicon dioxide) are respectively used to obtain the consistent sidewall profile at different locations, with photoresist of 24° and silicon dioxide of 57°.

Bimorph Dual-Electrode ScAlN PMUT with Two Terminal Connections

This paper presents a novel bimorph Piezoelectric Micromachined Ultrasonic Transducer (PMUT) fabricated with 8-inch standard CMOS-compatible processes. The bimorph structure consists of two layers of 20% scandium-doped aluminum nitride (Sc0.2Al0.8N) thin films, which are sandwiched among three molybdenum (Mo) layers. All three Mo layers are segmented to form the outer ring and inner plate electrodes. Both top and bottom electrodes on the outer ring are electrically linked to the center inner plate electrodes. Likewise, the top and bottom center plate electrodes are electrically connected to the outer ring in the same fashion. This electrical configuration maximizes the effective area of the given PMUT design and improves efficiency during the electromechanical coupling process. In addition, the proposed bimorph structure further simplifies the device's electrical layout with only two-terminal connections as reported in many conventional unimorph PMUTs. The mechanical and acoustic measurements are conducted to verify the device's performance improvement. The dynamic mechanical displacement and acoustic output under a low driving voltage (1 Vpp) are more than twice that reported from conventional unimorph devices with a similar resonant frequency. Moreover, the pulse-echo experiments indicate an improved receiving voltage of 10 mV in comparison with the unimorph counterpart (4.8 mV). The validation of device advancement in the electromechanical coupling effect by using highly doped ScAlN thin film, the realization of the proposed bimorph PMUT on an 8-inch wafer paves the path to production of next generation, high-performance piezoelectric MEMS.

Scandium-Doped Aluminum Nitride for Acoustic Wave Resonators, Filters, and Ferroelectric Memory Applications

Scandium-doped aluminum nitride (AlScN) has generated great research interest owing to its unique properties. The wurtzite-structure AlScN is compatible with the complementary metal oxide semiconductor (CMOS) process and has improved piezoelectricity compared with undoped aluminum nitride (AlN), making it a promising candidate to be used for next-generation radio frequency (RF) microelectromechanical system (MEMS) building blocks. Additionally, the ferroelectricity observed in AlScN can be potentially applied to ferroelectric memory devices. In this spotlight article, we provide a brief introduction of AlScN and summarize the recent progress of AlScN-based applications, including RF acoustic wave resonators, filters, and ferroelectric memory devices. Finally, the current challenges as well as the future opportunities of AlScN materials and related applications are discussed.

AlScN Film Based Piezoelectric Micromechanical Ultrasonic Transducer for an Extended Long-Range Detection.

Piezoelectric micromachined ultrasonic transducers (PMUTs) have been widely applied in distance sensing. However, the sensing distance of currently reported miniaturized ultrasonic sensors (e.g., PMUTs or CMUT) is still limited up to a certain range (e.g., ≤5 m) compared to conventional bulk ultrasonic devices. This paper reports a PMUT array design using scandium-doped aluminum nitride (AlScN) as its piezoelectric layer for an extended long-range detection purpose. To minimize air attenuation, our device is resonating at 66 kHz for a high receive sensitivity of 5.7 mV/Pa. The proposed PMUT array can generate a sound pressure level (SPL) as high as 120 dB at a distance of 10 cm without beam forming. This PMUT design is catered for a pin-to-pin replacement of the current commercial bulk ultrasonic ranging sensor and works directly with the conventional range finding system (e.g., TI PGA460). In comparison with the common bulk transducer, the size of our device is 80% smaller. With the identical ranging detection setup, the proposed PMUT array improves the system SNR by more than 5 dB even at a distance as far as 6.8 m. The result of extended sensing distance validates our miniaturized PMUT array as the optimized candidate for most ultrasonic ranging applications. With the progressive development of piezoelectric MEMS, we believe that the PMUT technology could be a game changer in future long-range sensing applications.

Nondestructive Wafer Level MEMS Piezoelectric Device Thickness Detection.

This paper introduces a novel nondestructive wafer scale thin film thickness measurement method by detecting the reflected picosecond ultrasonic wave transmitting between different interfacial layers. Unlike other traditional approaches used for thickness inspection, this method is highly efficient in wafer scale, and even works for opaque material. As a demonstration, we took scandium doped aluminum nitride (AlScN) thin film and related piezoelectric stacking layers (e.g. Molybedenum/AlScN/Molybdenum) as the case study to explain the advantages of this approach. In our experiments, a laser with a wavelength of 515 nm was used to first measure the thickness of (1) a single Molybdenum (Mo) electrode layer in the range of 100-300 nm, and (2) a single AlScN piezoelectric layer in the range of 600-1000 nm. Then, (3) the combined stacking layers were measured. Finally, (4) the thickness of a standard piezoelectric composite structure (Mo/AlScN/Mo) was characterized based on the conclusions and derivation extracted from the aforementioned sets of experiments. This type of standard piezoelectric composite has been widely adopted in a variety of Micro-electromechanical systems (MEMS) devices such as the Piezoelectric Micromachined Ultrasonic Transducer (PMUT), the Film Bulk Acoustic Resonator (FBAR), the Surface Acoustic Wave (SAW) and more. A comparison between measurement data from both in-line and off-line (using Scanning Electron Microscope) methods was conducted. The result from such in situ 8-inch wafer scale measurements was in a good agreement with the SEM data.

Electro-Acoustic Properties of Scandium-Doped Aluminum Nitride (ScxAl1-xN) Material and its Application to Phononic Crystal-Coupled SAW Devices

Within the framework of the Density Functional Theory, the elastic, dielectric, and piezoelectric coefficients of w-ScxAl1−xN material were investigated for scandium (Sc) concentrations x = 0 to 0.375. The electro-acoustic properties are used to investigate the frequency response of the SAW delay line, based on the tilt θ° of the normal c-axis of the w-ScxAl1−xN piezoelectric thin film. We found that the piezoelectric response is improved as the Sc concentration increases, which is consistent with existing works in the literature. A 2D-phononic crystal pillars was then grafted on top of the surface, and the dependence of the acoustic band gaps is investigated with the help of the finite element method as a function of the Sc concentration and the tilted angle of w-Sc0.375Al0.625N. It was found that the two first band gaps exhibit a shift toward low frequencies with increasing Sc concentration. Moreover, the second acoustic bandgap is more sensitive to the inclination angle than the first. Furthermore, the insertion loss (S21) of w-Sc0.375Al0.625N is improved by 22 dB at θ° = 60°. The c-axis tilted Sc0.375Al0.625N-SAW delay line coupled with 2D-phononic crystals is a promising structure for low-loss and high-frequency SAW devices.

Oxide overlayer formation on sputtered ScAlN film exposed to air

There has been much interest in developing scandium doped aluminum nitride (ScAlN) thin films for use in electronic devices, due to their excellent piezoMEMS response, large spontaneous polarization, and the capability for CMOS-compatible integration. As with the undoped AlN film, the formation of an oxide overlayer on the air-exposed ScAlN film can modulate its surface structure and the electrical properties. In this study, we investigate the effects of surface oxidation on a ScAlN film by characterizing the film microstructure and the elemental chemical states. We found that amorphous phase and small crystallites co-exist in the oxide overlayer, which is remarkably different from the columnar (0002) crystalline texture in the bulk ScAlN film. X-ray photoelectron spectroscopy core-level analyses confirm the formation of Al–O and Sc–O bonds. Moreover, the valence band maximum of the oxide overlayer shifts toward a higher binding energy, indicating a high energy barrier at the ScAlN/metal interface. Our results suggest that ScAlN surface oxidation is a chemical reaction-driven and self-limited process.

Effects of Electric Bias on Different Sc-Doped AlN-Based Film Bulk Acoustic Resonators

Film bulk acoustic resonators (FBARs) based on aluminum nitride (AlN) and scandium-doped aluminum nitride (AlScN) exhibit tremendous application aspects in the radio frequency front-end due to achievable high-frequency characteristics, superior thermal performances and compatibility with harsh environments. Delicately controlling the resonant frequency (fs) of FBAR is essential for integrating filters or modules. In this work, we provide a practical feasibility in adjusting fs of AlN and AlScN FBAR using external direct current electric bias (EDC). When applying a negative EDC (the direction along the reversed c-axis), fs shifts to a lower frequency, whereas a positive EDC brings a higher fs. In order to extract the equivalent values of the stiffness coefficient (c33), piezoelectric coefficient (e33) and dielectric constant (εzz) of AlN and AlScN piezoelectric materials, we adopted the electromechanical equivalent Mason model. The results show that the equivalent values of c33 increase with the change of EDC from negative to positive, and, on the other hand, those of e33 and εzz decrease. Our work provides a systematic investigation on the electric field-influenced stiffening effect of AlN and AlScN piezoelectric films and opens a feasibility for frequency-tunable resonators.

A ScAlN Piezoelectric High-Frequency Acoustic Pressure-Gradient MEMS Vector Hydrophone With Large Bandwidth

In this letter, a scandium-doped aluminum nitride (Sc <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>x</i></sub> <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${\mathrm {Al}}_{1-x}\text{N}$ </tex-math></inline-formula> , x = 9.5%) piezoelectric high-frequency MEMS vector hydrophone with large operation bandwidth is presented, which measures acoustic pressure gradient underwater. The hydrophone sensor consists of four groups of sensing cell arrays. Each sensing cell is composed of a hexagonal sensing diaphragm made up of a piezoelectric stack of ScAlN piezoelectric thin-film sandwiched by Mo and highly doped single-crystal silicon, with a top and a bottom oxide film surrounding the piezoelectric stack. The hydrophone sensor can operate in not only omnidirectional receive mode, but also dipole receive mode, depending on the signal processing algorithm used for the four array groups. The vector hydrophone operates in the frequency range of 20 kHz to 160 kHz, which is specially designed to monitor the dolphin calls. The measured maximum receive sensitivity is -175 dB (re: 1 V/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula> Pa) in the dipole receive mode at 160 kHz and −169±2 dB (re: 1 V/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula> Pa) in the omnidirectional receive mode in the operation bandwidth, respectively. The reported vector hydrophone also presents a smooth directivity pattern at 100 kHz. The experiments show the reported MEMS vector hydrophone has good potential in conservation of dolphins and other underwater detection at high frequency between 20 kHz to 160 kHz.

Scandium-Doped Aluminum Nitride PMUT Arrays for Wireless Ultrasonic Powering of Implantables

The present work reports on the novel usage of Scandium-doped Aluminum Nitride (AlScN) PMUT arrays for enhanced power transfer in implantable applications. Optimization considerations were explored for the PMUT array towards high performance. The transmission metric, compared to identical arrays based on Aluminum Nitride (AlN), showed a 25dB increase. Power transfer measurements also confirmed a considerable increase as compared to previous work based on AlN. Different matching strategies were explored to maximize the output power including inductor conjugate matching and matching utilizing resonators in series and parallel topologies. A full characterization of the transferred power versus incident acoustic intensity on the array revealed transmission of power levels of several milliwatts for intensities below the Food and Drug Administration’s (FDA) limit. The performance of the array, as compared with other implementations with a range of frequencies, dimensions and input acoustic intensities was bench-marked through the use of the conversion efficiency as the figure-of-merit. The practical applicability of the system, utilizing a realistic tissue phantom as the medium, was proven by interfacing with a commercially available boost converter to obtain a rectified voltage and power levels sufficient for powering and charging intra-body electronics.

A High-Performance 9.5% Scandium-Doped Aluminum Nitride Piezoelectric MEMS Hydrophone With Honeycomb Structure

This letter presents a high-performance scandium-doped aluminum nitride (Sc <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>x</i></sub> Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-<i>x</i></sub> N, x = 9.5%) piezoelectric MEMS hydrophone. The doping of Sc increases the piezoelectric constants of the piezoelectric sensing layer and hence results in better receive sensitivity for the ScAlN-based piezoelectric MEMS hydrophone. The sensing cells of the MEMS hydrophone sensor are designed in a bioinspired honeycomb structure for achieving high fill-factor and thus a large receive sensitivity. The top electrodes of the sensing cells are split into the inner and outer sections with optimized size ratios for differential readout, which further enhances the sensor’s sensitivity. The receive sensitivity is improved even further by reducing the top oxide thickness on the sensing diaphragm. The best measured receive sensitivity of the reported MEMS hydrophone with differential readout is −164.5 dB (re: 1 V/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula> Pa). An equivalent noise density as low as 44 dB (re: <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1 ~\mu $ </tex-math></inline-formula> Pa/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\surd $ </tex-math></inline-formula> Hz) at 1kHz is achieved. These metrics are much better than those of state-of-the-art bulk piezoceramic hydrophones as well as other reported piezoelectric MEMS hydrophones.

Deposition, Characterization, and Modeling of Scandium-Doped Aluminum Nitride Thin Film for Piezoelectric Devices.

In this work, we systematically studied the deposition, characterization, and crystal structure modeling of ScAlN thin film. Measurements of the piezoelectric device’s relevant material properties, such as crystal structure, crystallographic orientation, and piezoelectric response, were performed to characterize the Sc0.29Al0.71N thin film grown using pulsed DC magnetron sputtering. Crystal structure modeling of the ScAlN thin film is proposed and validated, and the structure–property relations are discussed. The investigation results indicated that the sputtered thin film using seed layer technique had a good crystalline quality and a clear grain boundary. In addition, the effective piezoelectric coefficient d33 was up to 12.6 pC/N, and there was no wurtzite-to-rocksalt phase transition under high pressure. These good features demonstrated that the sputtered ScAlN is promising for application in high-coupling piezoelectric devices with high-pressure stability.

Strongly enhanced second-order optical nonlinearity in CMOS-compatible Al1−xScxN thin films

Silicon photonics has enabled large-scale production of integrated optical devices for a vast array of applications. However, extending its use to nonlinear devices is difficult since silicon does not exhibit an intrinsic second-order nonlinearity. While heterogeneous integration of strongly nonlinear materials is possible, it often requires additional procedures since these materials cannot be directly grown on silicon. On the other hand, CMOS-compatible materials often suffer from weaker nonlinearities, compromising efficiency. A promising alternative to current material platforms is scandium-doped aluminum nitride (Al1−xScxN), which maintains the CMOS compatibility of aluminum nitride (AlN) and has been used in electrical devices for its enhanced piezoelectricity. Here, we observe enhancement in optical second-order susceptibility (χ(2)) in CMOS-compatible Al1−xScxN thin films with varying Sc concentrations. For Al0.64Sc0.36N, the χ(2) component d33 is enhanced to 62.3 ± 5.6 pm/V, which is 12 times stronger than intrinsic AlN and twice as strong as lithium niobate. Increasing the Sc concentration enhances both χ(2) components, but loss increases with a higher Sc concentration as well, with Al0.64Sc0.36N exhibiting 17.2 dB/cm propagation loss at 1550 nm and Al0.80Sc0.20N exhibiting 8.2 dB/cm at 1550 nm. Since other material properties of this alloy are also affected by Sc, tuning the Sc concentration can balance strong nonlinearity, loss, and other factors depending on the needs of specific applications. As such, Al1−xScxN could facilitate low cost development of nonlinear integrated photonic devices.

Electric-field-induced crossover of polarization reversal mechanisms in Al1−x Sc x N ferroelectrics

Scandium-doped aluminum nitride, Al1−x Sc x N, represents a new class of displacive ferroelectric materials with high polarization and sharp hysteresis along with high-temperature resilience, facile synthesizability and compatibility with standard CMOS fabrication techniques. The fundamental physics behind the transformation of unswitchable piezoelectric AlN into switchable Al–Sc–N ferroelectrics depends upon important atomic properties such as local structure, dopant distributions and the presence of competing mechanism of polarization switching in the presence of an applied electric-field that have not been understood. We computationally synthesize Al1−x Sc x N to quantify the inhomogeneity of Sc distribution and phase segregation, and characterize its crystal and electronic structure as a function of Sc-doping. Nudged elastic band calculations of the potential energy surface and quantum molecular dynamics simulations of direct electric-field-driven ferroelectric switching reveal a crossover between two polarization reversal mechanisms—inhomogeneous nucleation-and-growth mechanism originating near Sc-rich regions in the limit of low applied fields and nucleation-limited-switching in the high-field regime. Understanding polarization reversal pathways for these two mechanisms as well as the role of local Sc concentration on activation barriers provides design rules to identify other combinations of dopant elements, such as Zr, Mg etc. to synthesize superior AlN-based ferroelectric materials.

A Temperature-Stable and Low Impedance Piezoelectric MEMS Resonator for Drop-in Replacement of Quartz Crystals

In this letter, we report a highly temperature-stable and low impedance scandium doped aluminum nitride (Sc <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> AI <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> N, x=9.5%) on silicon piezoelectric microelectromechanical system (MEMS) resonator. Passive temperature compensation techniques, including heavy doping and composite structure using oxide layers, are employed to minimize the frequency drifts over temperature of the piezoelectric MEMS resonator. The turnover point is adjusted by changing the in-plane crystal orientation of the (100) doped device silicon wafer. A frequency variation of ±21.5 ppm over the industry temperature range from -40 °C to 85 °C is achieved when the crystal orientation of the device silicon wafer is arranged at around 22.5° from the <;110> direction. The measured loaded quality factor ( Q <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">l</sub> ) is 10017 with a motional impedance of 28 Ω at its series resonant frequency of 24.44 MHz. The deduced unloaded quality factor ( Q <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">un</sub> ) is above 45000. Thanks to the excellent temperature stability and low impedance, the reported piezoelectric MEMS resonator shows great potential to directly replace the classical quartz crystal resonators without any active temperature compensation.

Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory.

Recent advances in oxide ferroelectric (FE) materials have rejuvenated the field of low-power, nonvolatile memories and made FE memories a commercial reality. Despite these advances, progress on commercial FE-RAM based on lead zirconium titanate has stalled due to process challenges. The recent discovery of ferroelectricity in scandium-doped aluminum nitride (AlScN) presents new opportunities for direct memory integration with logic transistors due to the low temperature of AlScN deposition (approximately 350 °C), making it compatible with back end of the line integration on silicon logic. Here, we present a FE-FET device composed of an FE-AlScN dielectric layer integrated with a two-dimensional MoS2 channel. Our devices show an ON/OFF ratio of ∼106, concurrent with a normalized memory window of 0.3 V/nm. The devices also demonstrate stable memory states up to 104 cycles and state retention up to 105 s. Our results suggest that the FE-AlScN/2D combination is ideal for embedded memory and memory-based computing architectures.

Infrared-laser based characterization of the pyroelectricity in AlScN thin-films

A measurement system for characterization of the pyroelectricity in thin- and thick-films is introduced. The system is based on a quantum-cascade infrared laser that stimulates the temperature within the sample film with variable modulation frequencies up to 120 kHz. As model material system we choose Scandium-doped Aluminum Nitride (AlScN) due to its promising piezo- and dielectric behavior as well as CMOS compatibility. We measured the pyro-electric response and its temperature characteristics. The transverse effective piezoelectric coefficient e31f is derived from the measurement of the longitudinal effective piezoelectric modulus d33 and we discuss the contribution of piezoelectric clamping to the measured pyroelectric response. Our findings are important for integration of AlScN films on exposed membranes for dense and sensitive infrared detectors.