The rapid development of IT markets, including big data, AI, 5G, IoT, smart automotive, and datacenters, has led to an increase in demand for advanced packaging solutions. With the IC density doubling through the shrinking of feature sizes, significant improvements in IC device performance have been achieved. This continuous scaling of feature sizes has prompted changes in packaging technology, with three-dimensional die stacking technologies like through-silicon vias (TSVs) and microbumps emerging as crucial innovations.However, traditional microbumps suffer from issues such as the Kirkendall effect, side wetting, and solder depletion, which compromise both mechanical and electrical properties. Innovative solutions are thus essential to address these challenges effectively. Cu to Cu bonding eliminates the formation of intermetallic compounds, mitigating the problems associated with microbumps. Additionally, Cu to Cu bonding offers superior electrical properties compared to microbumps, further enhancing its appeal.In particular, semiconductor devices requiring high-density packaging, like high bandwidth memory (HBM), have spurred interest in hybrid bonding. Additionally, the growing need for 3D interconnects in advanced packaging is becoming increasingly apparent.To this end, research is focusing on next-generation microbumps, particularly Cu-Cu bonding, as an alternative solution. Understanding the internal characteristics of Cu is crucial for promoting diffusion between Cu atoms at lower temperatures. Thus, nanotwinned Cu with a (111) preferred orientation has garnered significant research attention as a material that promotes diffusion between copper atoms, particularly in Cu-Cu bonding processes. However, research is lacking on the optimal grain orientation for the bonding process.By controlling crystal orientation through plating parameter adjustments, Cu films with three principal preferred orientations have been achieved. These films exhibit distinct mechanical properties based on their preferred orientation, with (111) preferred Cu showing the highest hardness due to the significant presence of nanotwins.In summary, advancements in 3D interconnect technologies, particularly in Cu-Cu bonding, hold promise for addressing the challenges in advanced packaging. By employing innovative solutions and exploring new materials and techniques, the semiconductor industry can continue to meet the evolving demands of the IT market while ensuring the reliability and performance of semiconductor devices.
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