Sb2Te3 Layers Research Articles

Plasmonic resonance and sensing based on Sb2Te3 topological insulator nanocolumn array

Topological insulators (TIs) are new kind of electronic materials with special energy band structures and topological properties. With topologically-protected metallic surface state and insulating bulk state, TIs have excellent electronic and optical characteristics containing the excitation of surface plasmons. Herein, we deposited the antimony telluride (Sb2Te3) TI layer using the magnetron sputtering method and employed focused ion beam (FIB) lithography to fabricate a nanocolumn array on the Sb2Te3 layer. The experimental measurements show that the localized surface plasmon resonance (LSPR) can be excited in the Sb2Te3 TI nanocolumn array in the visible region. The resonance wavelength is dependent on the size and period of the Sb2Te3 nanocolumn array. The experiment results are in good agreement with the finite-difference time-domain (FDTD) numerical simulations. Moreover, the LSPR enables to realize the microscale optical sensing of the surrounding refractive index with a high sensitivity of 450 nm/RIU. This work will pave a new pathway for the excitation of surface plasmons in TI materials and their applications in optical sensing at the microscale.

Room temperature-produced chalcogenide superlattices for interfacial phase-change memory

Phase-change memory (PCM) using chalcogenide films composed of Ge–Sb–Te alloys is the only commercially available nonvolatile memory for storage class memory. Recently, superlattice films of GeTe and Sb2Te3, called interfacial PCM (iPCM), have attracted attention for further increasing the switching speed and reducing energy consumption. It has been reported that the iPCM device exhibits both unipolar- and bipolar-type resistive switching depending on the method of voltage application, and research is being conducted to advance its applications. However, all iPCMs reported thus far have been formed at high temperatures beyond the crystallization temperatures of GeTe and Sb2Te3 using vacuum chambers equipped with a heating stage, making mass production and practical application difficult. Here, we report on fabricated superlattice composed of S-doped GeTe and Sb2Te3 layers by combining room temperature deposition with subsequent two-step annealing. Upon evaluating the performance of this superlattice film as a bipolar-type iPCM, it was found to exhibit characteristics comparable to those of bipolar-type iPCM fabricated from high-temperature deposited superlattices. This technology is expected to contribute to an increase in the throughput of iPCM device manufacturing.

Localized Surface Doping Induced Ultralow Contact Resistance between Metal and (Bi,Sb)2Te3 Thermoelectric Films.

Micro thermoelectric devices are expected to further improve the cooling density for the temperature control of electronic devices; nevertheless, the high contact resistivity between metals and semiconductors critically limits their applications, especially in chip cooling with extremely high heat flux. Herein, based on the calculated results, a low specific contact resistivity of ∼10-7 Ω cm2 at the interface is required to guarantee a desirable cooling power density of micro devices. Thus, we developed a generally applicable interfacial modulation strategy via localized surface doping of thermoelectric films, and the feasibility of such a doping approach for both n/p-type (Bi,Sb)2Te3 films was demonstrated, which can effectively increase the surface-majority carrier concentration explained by the charge transfer mechanism. With a proper doping level, ultralow specific contact resistivities at the interfaces are obtained for n-type (6.71 × 10-8 Ω cm2) and p-type (3.70 × 10-7 Ω cm2) (Bi,Sb)2Te3 layers, respectively, which is mainly attributed to the carrier tunneling enhancement with a narrowed interfacial contact barrier width. This work provides an effective scheme to further reduce the internal resistance of micro thermoelectric coolers, which can also be extended as a kind of universal interfacial modification technique for micro semiconductor devices.

Interfacial Distortion of Sb2Te3-Sb2Se3 Multilayers via Atomic Layer Deposition for Enhanced Thermoelectric Properties.

Atomic layer deposition (ALD) is an effective technique for depositing thin films with precise control of layer thickness and functional properties. In this work, Sb2Te3-Sb2Se3 nanostructures were synthesized using thermal ALD. A decrease in the Sb2Te3 layer thickness led to the emergence of distinct peaks from the Laue rings, indicative of a highly textured film structure with optimized crystallinity. Density functional theory simulations revealed that carrier redistribution occurs at the interface to establish charge equilibrium. By carefully optimizing the layer thicknesses, we achieved an obvious enhancement in the Seebeck coefficient, reaching a peak figure of merit (zT) value of 0.38 at room temperature. These investigations not only provide strong evidence for the potential of ALD manipulation to improve the electrical performance of metal chalcogenides but also offer valuable insights into achieving high performance in two-dimensional materials.

Comprehensive study of the ultrafast photoexcited carrier dynamics in Sb2Te3–GeTe superlattices

Abstract Chalcogenide superlattices Sb2Te3-GeTe is a candidate for interfacial phase-change memory (iPCM) data storage devices. By employing terahertz emission spectroscopy and the transient reflectance spectroscopy together, we investigate the ultrafast photoexcited carrier dynamics and current transients in Sb2Te3-GeTe superlattices. Sample orientation and excitation polarization dependences of the THz emission confirm that ultrafast thermo-electric, shift and injection currents contribute to the THz generation in Sb2Te3-GeTe superlattices. By decreasing the thickness and increasing the number of GeTe and Sb2Te3 layer, the interlayer coupling can be enhanced, which significantly reduces the contribution from circular photo-galvanic effect (CPGE). A photo-induced bleaching in the transient reflectance spectroscopy probed in the range of ~1100 nm to ~1400 nm further demonstrates a gapped state resulting from the interlayer coupling. These demonstrates play an important role in the development of iPCM-based high-speed optoelectronic devices.

Exploiting the Close-to-Dirac Point Shift of the Fermi Level in the Sb2Te3/Bi2Te3 Topological Insulator Heterostructure for Spin-Charge Conversion.

Properly tuning the Fermi level position in topological insulators is of vital importance to tailor their spin-polarized electronic transport and to improve the efficiency of any functional device based on them. Here, we report the full in situ metal organic chemical vapor deposition (MOCVD) and study of a highly crystalline Bi2Te3/Sb2Te3 topological insulator heterostructure on top of large area (4″) Si(111) substrates. The bottom Sb2Te3 layer serves as an ideal seed layer for the growth of highly crystalline Bi2Te3 on top, also inducing a remarkable shift of the Fermi level to place it very close to the Dirac point, as visualized by angle-resolved photoemission spectroscopy. To exploit such ideal topologically protected surface states, we fabricate the simple spin-charge converter Si(111)/Sb2Te3/Bi2Te3/Au/Co/Au and probe the spin-charge conversion (SCC) by spin pumping ferromagnetic resonance. A large SCC is measured at room temperature and is interpreted within the inverse Edelstein effect, thus resulting in a conversion efficiency of λIEEE ∼ 0.44 nm. Our results demonstrate the successful tuning of the surface Fermi level of Bi2Te3 when grown on top of Sb2Te3 with a full in situ MOCVD process, which is highly interesting in view of its future technology transfer.

Spin‐Orbit Readout Using Thin Films of Topological Insulator Sb2Te3 Deposited by Industrial Magnetron Sputtering

AbstractDriving a spin‐logic circuit requires the production of a large output signal by spin‐charge interconversion in spin‐orbit readout devices. This should be possible by using topological insulators, which are known for their high spin‐charge interconversion efficiency. However, high‐quality topological insulators have so far only been obtained on a small scale, or with large scale deposition techniques that are not compatible with conventional industrial deposition processes. The nanopatterning and electrical spin injection into these materials have also proven difficult due to their fragile structure and low spin conductance. The fabrication of a spin‐orbit readout device from the topological insulator Sb2Te3 deposited by large‐scale industrial magnetron sputtering on SiO2 is presented. Despite a modification of the Sb2Te3 layer structural properties during the device nanofabrication, a sizeable output voltage is measured that can be unambiguously ascribed to a spin‐charge interconversion process. The results pave the way for the integration of layered van der Waals materials in spin‐logic devices.

Balance between thermal stability and operation speed realized by Ti gradient doping in Sb2Te3 phase-change memory

Phase-change memory (PCM) is one of the leading candidates for the next generation nonvolatile memory. As a growth-dominated crystalline material, Sb2Te3 is of rapid crystallization speed while its poor thermal stability limits its application. Doping Ti can significantly enhance its amorphous stability but inevitably slows down its crystallization speed. How to balance the contradiction between thermal stability and operation speed remains challenging. In this work, we proposed a gradient Ti-doped Sb2Te3 phase-change material and device. This gradient doping strategy compensates for the negative effect of Ti doping on the crystallization rate of Sb2Te3 via the template effect of the lower doping concentration layer. Very small lattice mismatch between the Sb2Te3 layers with different Ti doping concentrations is verified by x-ray diffraction characterization. The crystallization temperature of a gradient Ti-doped Sb2Te3 thin film is raised up to 172.6 °C and the same 50 ns operation speed as a pure Sb2Te3 device is achieved in the corresponding PCM device. Furthermore, the gradient distribution of Ti elements and the corresponding progressive crystallization phenomenon are verified by transmission electron microscopy revealing the microscopic origin of rapid crystallization speed. Therefore, with our gradient doping strategy, the amorphous stability is improved without sacrificing the crystallization speed in PCM.

Sb2Te3 nanoparticle-containing single-walled carbon nanotube films coated with Sb2Te3 electrodeposited layers for thermoelectric applications

Single-walled carbon nanotubes (SWCNTs) are promising thermoelectric materials owing to their flexibility and excellent durability when exposed to heat and chemicals. Thus, they are expected to be used in power supplies for various sensors. However, their thermoelectric performances are inferior to those of inorganic thermoelectric materials. To improve the thermoelectric performance while maintaining the excellent characteristics of SWCNTs, a novel approach to form inorganic thermoelectric layers on the SWCNT bundle surfaces using electrodeposition is proposed. We synthesized Sb2Te3 nanoparticle-containing SWCNT films and coated them with electrodeposited Sb2Te3 layers. The Sb2Te3 nanoparticles were synthesized via a spontaneous redox reaction, which were then added to a SWCNT dispersion solution, and films were produced via vacuum filtration. At higher nanoparticle contents in the films, the Sb2Te3 electrodeposited layers completely covered the SWCNT bundles owing to the increase in the concentration of precursor ions near the SWCNT bundle surface, which in turn was the result of melted nanoparticles. The thermoelectric performance improved, and the maximum power factor at approximately 25 °C was 59.5 µW/(m K2), which was 4.7 times higher than that of the normal SWCNT film. These findings provide valuable insights for designing and fabricating high-performance flexible thermoelectric materials.

Sb2Te3/TiTe2‐Heterostructure‐Based Phase Change Memory for Fast Set Speed and Low Reset Energy

The phase change memory (PCM) device has spotlighted as a candidate group for storage class memory devices and neuromorphic devices. However, the conventional GST‐based PCM has problems of relatively slow set speed and high reset energy consumption. In this study, we fabricate an amorphous Sb2Te3/TiTe2 heterostructure using a sputtering process by inserting multiple TiTe2 nanolayers inside the Sb2Te3 layer. The fabricated amorphous Sb2Te3/TiTe2 heterostructure film is confirmed as a phase change material with excellent properties through temperature‐dependent crystallinity change and resistance change analysis. Also, the Sb2Te3/TiTe2 heterostructure is integrated into a conventional T‐shape phase change memory with a bottom electrode diameter of 200 nm to analyze electrical switching characteristics. The Sb2Te3/TiTe2 heterostructure‐based PCM exhibited a faster set speed (≈30 ns) than the conventional GST‐based PCM, and the reset energy consumption is also reduced by more than 80% compared with the GST‐based PCM. In addition, the resistance drift coefficient is also reduced to 1/10 to improve the resistance drift characteristics. This study confirmed the excellent characteristics of the Sb2Te3/TiTe2 heterostructure as a phase change material and as a next‐generation PCM.

Tailoring Interfacial Charge Transfer for Optimizing Thermoelectric Performances of MnTe‐Sb2Te3 Superlattice‐Like Films

AbstractInterfacial charge transfer has a vital role in tailoring the thermoelectric performance of superlattices (SLs), which, however, is rarely clarified by experiments. Herein, based on epitaxially grown p‐type (MnTe)x(Sb2Te3)y superlattice‐like films, synergistically optimized thermoelectric parameters of carrier density, carrier mobility, and Seebeck coefficient are achieved by introducing interfacial charge transfer, in which effects of hole injection, modulation doping, and energy filtering are involved. Carrier transport measurements and angle‐resolved photoemission spectroscopy (ARPES) characterizations reveal a strong hole injection from the MnTe layer to the Sb2Te3 layer in the SLs, originating from the work function difference between MnTe and Sb2Te3. By reducing the thickness of MnTe less than one monolayer, all electronic transport parameters are synergistically optimized in the quantum‐dots (MnTe)x(Sb2Te3)12 superlattice‐like films, leading to much improved thermoelectric power factors (PFs). The (MnTe)0.1(Sb2Te3)12 obtains the highest room‐temperature PF of 2.50 mWm−1K−2, while the (MnTe)0.25(Sb2Te3)12 possesses the highest PF of 2.79 mWm−1K−2 at 381 K, remarkably superior to the values acquired in binary MnTe and Sb2Te3 films. This research provides valuable guidance on understanding and rationally tailoring the interfacial charge transfer of thermoelectric SLs to further enhance thermoelectric performances.

Characterization of Sb2Te3 thin films prepared by electrochemical technique

A conductive and thermally stable material with a high work function is required to produce highly efficient CdTe-based thin film solar cell (TFSC) devices. In this study, we report the growth of layers of polycrystalline, stoichiometric, and compact antimony telluride (Sb2Te3) by using the wet-chemical aqueous electrochemical technique. A three-electrode geometry consisting of a working electrode, a reference electrode, and a counter electrode was used to deposit the Sb2Te3 thin films at a low temperature (60 °C ± 2 °C). The growth potential was optimized through cyclic voltammetric measurements with reference to the Ag/AgCl reference electrode. The structural, morphological, compositional, and electrical properties of the films were studied and correlated. Their prominent Bragg reflections of (103), (016), and (110) verified the growth of the rhombohedral crystal structure of Sb2Te3. The Raman modes Eg and A1g, observed at 119.88 and 161.48 cm−1, respectively, confirmed the formation of the Sb2Te3 compound. Compact grain growth with a void-free and well-adherent layer was observed using scanning electron microscopy. The grain size, surface morphology, and thickness of the Sb2Te3 layers were significantly influenced by variations in the deposition potentials. An EDS analysis of the sample grown at −0.5 V revealed nearly stoichiometric growth (2:3, Sb:Te ratio). The elemental chemical states were studied through XPS analysis. The survey scan confirmed the presence of antimony, tellurium, oxygen, and carbon. The current–voltage characteristics reflected the nearly ohmic nature of the Sb2Te3 thin films. The ideality factor and carrier concentration obtained for the sample grown at −0.5 V exhibited nearly ohmic behaviors, with a high conductivity that was suitable for back-contact between the buffer layer and CdTe for the development of CdS/CdTe solar cells.

Molecular beam epitaxial growth of Sb2Te3–Bi2Te3 lateral heterostructures

We report on heteroepitaxial growth of Sb2Te3–Bi2Te3 lateral heterostructures using molecular beam epitaxy. The lateral heterostructures were fabricated by growing Bi2Te3 islands of hexagonal or triangular nanostructures with a typical size of several 100 nm and thickness of ∼15 nm on graphene substrates and Sb2Te3 laterally on the side facets of the nanostructures. Multiple-step processes with different growth temperatures were employed to grow the lateral heterostructures. Electron microscopy techniques indicate that the inner region is Bi2Te3 and the outer Sb2Te3 was formed laterally on the graphene in an epitaxial manner. The interface between Bi2Te3 and Sb2Te3 from planar and cross-sectional views was studied by the aberration-corrected (C s-corrected) high-angle annular dark-field scanning transmission electron microscope technique. The cross-sectional electron microscopy investigation shows no wetting layer of Sb2Te3 on Bi2Te3, corroborating perfect lateral heterostructure formation. In addition, we investigated the topological properties of Sb2Te3–Bi2Te3 lateral heterostructures using first-principles calculations.

Modulation of oxygen transport by incorporating Sb2Te3 layer in HfO2-based memristor

The oxygen transport plays an important role on the uniformity of the transition metal oxides (TMOS) memristors. Here, the effect of incorporating Sb2Te3 layer into TiN/HfO2/Pt memristor on oxygen transport has been systematically explored. The experimental results reveal that the memristor with Sb2Te3 incorporation at TiN/HfO2 interface has improved switching uniformity and memory window. Further theoretical calculations demonstrate that Sb2Te3 is a proper oxygen reservoir as oxygen possesses very low formation energy and migration barrier in Sb2Te3 with many vacancies. During the operation process, the Sb2Te3 will gain more oxygen from the HfO2 layer than TiN once the applied voltage reaches up to forming voltage, producing more oxygen vacancies (VOs) in the HfO2 layer, compared with the device without the Sb2Te3 layer. Thus, the VOs conductive filaments (CF) in the HfO2 layer will be thick, resulting in a decrease in the randomness of CF's formation/rupture and, in turn, improving the device uniformity. Our findings provide an in-depth understanding of the oxygen reservoir in TMOS memristors, which is of great significance for the design and development of memristors.

(Invited) Atomic-Layer-Deposition of in-Situ Crystallized Ge2Sb2Te5 Alloy and Gete/Sb2Te3 Superlattice, and Their Phase-Change Performances

This paper introduces a new atomic layer deposition process for highly conformal, nanocrystalline-as-deposited GeTe-Sb2Te3 pseudo-binary film growth at a deposition temperature of 130 °C. The process utilizes Ge(II)-guanidinate, Te(Si(CH3)3)2, and Sb(OC2H5)3 with the NH3 co-reagent. The alternative GeTe and Sb2Te3 subcycles produced various film compositions, all consistent with the GeTe-Sb2Te3 tie lines, owing to the stoichiometric reactions between the precursors without involvement of undesirable side reactions. The density of the nanocrystalline Ge2Sb2Te5 (GST225) films was 6.2 g/cm3, similar to the density of the bulk crystalline material. The crystallization behaviors indicated that the distribution of the constituent elements of the GST225 films was highly uniform at the atomic level, as opposed to the case of the low-temperature (100 °C)-deposited films. The cubic to hexagonal transition at 350 °C upon post-annealing produced (0001) hexagonal planes highly aligned along the substrate. The demonstration of the phase change memory device achieved high cycling endurance (>107).The same ALD process was further exploited to grow the GeTe/Sb2Te3 superlattice structure, which might be an even more energy-efficient phase change material. It was found that the Sb2Te3 layer could be grown in highly c-axis oriented manner on SiO2 surface, which then can be used as the template layer for the subsequent growth of also highly c-axis oriented GeTe layer. Direct growth of the GeTe layer on SiO2 did not result in the similar optimal results. However, a certain intermixing occurs during the alternating growth of the Sb2Te3 and GeTe layers, of which details are dependent on the thickness ratio of the two layers. Interestingly, the intermixed layers still showed a certain type of layered structure, which appeared to be related to the van der Waals nature of the Sb2Te3 layer. However, such a layered structure could hardly be achieved on metallic surface such as TiN. This might be related with the highly interacting chemical nature of the TiN surface as well as the relatively rough surface topography. Adopting graphene or ultra-thin SiO2 layer on the TiN recovered the highly c-axis aligned growth behavior.

Improvement of Phase‐Change Memory Performance by Means of GeTe/Sb2Te3 Superlattices

GeTe/Sb2Te3 superlattices (SLs) obtained by sputtering are integrated in phase‐change memory (PCM) devices with a “wall structure”. The high structural quality of SLs deposited on TiN or SiNx layers, used as metallic bottom heater and dielectric bottom layer in PCM devices, is established by X‐ray diffraction, for as‐grown SLs and after an annealing corresponding to the maximum thermal budget during the integration process. Scanning transmission electron microscopy (STEM) images of SLs within PCM cells confirm that the SL structure is kept after integration. A robust statistical analysis on a large number of devices demonstrates unambiguously that the RESET current is lower in SL devices than in GeTe reference devices and decreases when the Sb2Te3 layer thickness in the SL increases from 2 to 8 nm. STEM imaging of a PCM cell incorporating an SL demonstrates that switching from the low‐ to the high‐resistance state occurs through a melting–quenching process and is not due to crystal–crystal transition or defect reorganization in the SL, in contrast to what is commonly stated in the literature on interfacial phase‐change memories (iPCMs). The origin of the improved switching performance of SL‐based PCM devices is discussed, linked with the impact of swapped bilayers.

Local structure of [(GeTe)2/(Sb2Te3)m]n super-lattices by x-ray absorption spectroscopy

Herein, the local structure of [(GeTe)2/(Sb2Te3)m]n chalcogenide super-lattices (SLs), which are at the basis of emerging interfacial Phase-Change Memory (iPCM), is studied by x-ray absoprtion spectroscopy at the Ge-K edge. The quantitative analysis of the first coordination shells reveals that the SLs possess a structure very similar to that of thin film of the canonical Ge2Sb2Te5 (GST225) phase-change alloy. By comparing experimental data with ab initio molecular dynamics simulations of the extended x-ray absorption fine structure spectra, we show that chemical disorder is mandatory in order to reproduce the experimental data in the full spectral range. As a result, we can unambiguously conclude that Ge/Sb intermixing resulting from inter-diffusion of the GeTe and Sb2Te3 layers within SLs is inherent to SLs and is not induced by sample preparation method nor by interaction with the electron beam of electron microscopes used in all the previous studies that were suggesting such a phenomenon. We further evidence that the short Ge-Te distance is the same in GeTe and GST225 films, as well as in SLs. The main difference is the impact of disorder in GST225 and SLs. Intermixing being definitively present in [(GeTe)2/(Sb2Te3)m]n SLs, this parameter must be considered in future models aiming at going further in the understanding and the development of iPCM technology. This seems mandatory in order to allow such technology to emerge in the near future on the non-volatile memory market.

Topologically protected spin diffusion and spin generator using chalcogenide superlattices

Spintronics is expected to be the basis for future ultra-low-energy nanoelectronic devices. To operate such devices at room temperature, amplifiers, batteries, capacitors, as well as spin current sources are required. Here we report a chalcogenide superlattice composed of GeTe and Sb2Te3 layers that have a topologically protected spin diffusion length exceeding 100 μm at room temperature. A spin generator is demonstrated by combining magnetic injectors (TbFeCo) with this superlattice. The spin current was found to increase exponentially with the number of superlattice periods. We used this effect to demonstrate a 15-fold increase in the spin current. In addition, spin rectification is possible by growing the superlattice layers with atomic-level thickness accuracy. The reported chalcogenide superlattice spin generators and rectifiers open new opportunities to design low-energy spintronic integrated circuits and quantum computers.

Fabrication of PEDOT: PSS-PVP Nanofiber-Embedded Sb2Te3 Thermoelectric Films by Multi-Step Coating and Their Improved Thermoelectric Properties.

Antimony telluride thin films display intrinsic thermoelectric properties at room temperature, although their Seebeck coefficients and electrical conductivities may be unsatisfactory. To address these issues, we designed composite films containing upper and lower Sb2Te3 layers encasing conductive poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS)- polyvinylpyrrolidone(PVP) nanowires. Thermoelectric Sb2Te3/PEDOT:PSS-PVP/Sb2Te3(ED) (STPPST) hybrid composite films were prepared by a multi-step coating process involving sputtering, electrospinning, and electrodeposition stages. The STPPST hybrid composites were characterized by field-emission scanning electron microscopy, X-ray diffraction, ultraviolet photoelectron spectroscopy, and infrared spectroscopy. The thermoelectric performance of the prepared STPPST hybrid composites, evaluated in terms of the power factor, electrical conductivity and Seebeck coefficient, demonstrated enhanced thermoelectric efficiency over a reference Sb2Te3 film. The performance of the composite Sb2Te3/PEDOT:PSS-PVP/Sb2Te3 film was greatly enhanced, with σ = 365 S/cm, S = 124 μV/K, and a power factor 563 μW/mK.

(Invited) Atomic-Layer-Deposition of in-Situ Crystallized Ge2Sb2Te5 Alloy and Gete/Sb2Te3 Superlattice, and Their Phase-Change Performances

This paper introduces a new atomic layer deposition process for highly conformal, nanocrystalline-as-deposited GeTe-Sb2Te3 pseudo-binary film growth at a deposition temperature of 130 °C. The process utilizes Ge(II)-guanidinate, Te(Si(CH3)3)2, and Sb(OC2H5)3 with the NH3 co-reagent. The alternative GeTe and Sb2Te3 subcycles produced various film compositions, all consistent with the GeTe-Sb2Te3 tie lines, owing to the stoichiometric reactions between the precursors without involvement of undesirable side reactions. The density of the nanocrystalline Ge2Sb2Te5 (GST225) films was 6.2 g/cm3, similar to the density of the bulk crystalline material. The crystallization behaviors indicated that the distribution of the constituent elements of the GST225 films was highly uniform at the atomic level, as opposed to the case of the low-temperature (100 °C)-deposited films. The cubic to hexagonal transition at 350 °C upon post-annealing produced (0001) hexagonal planes highly aligned along the substrate. The demonstration of the phase change memory device achieved high cycling endurance (>107).The same ALD process was further exploited to grow the GeTe/Sb2Te3 superlattice structure, which might be an even more energy-efficient phase change material. It was found that the Sb2Te3 layer could be grown in highly c-axis oriented manner on SiO2 surface, which then can be used as the template layer for the subsequent growth of also highly c-axis oriented GeTe layer. Direct growth of the GeTe layer on SiO2 did not result in the similar optimal results. However, a certain intermixing occurs during the alternating growth of the Sb2Te3 and GeTe layers, of which details are dependent on the thickness ratio of the two layers. Interestingly, the intermixed layers still showed a certain type of layered structure, which appeared to be related to the van der Waals nature of the Sb2Te3 layer. However, such a layered structure could hardly be achieved on metallic surface such as TiN. This might be related with the highly interacting chemical nature of the TiN surface as well as the relatively rough surface topography. Adopting graphene or ultra-thin SiO2 layer on the TiN recovered the highly c-axis aligned growth behavior.