Saturation Current Research Articles

Impact of Negative Gate Stress on the Reliability of p-GaN Gate HEMT Devices under Dynamic Switching Operation

Abstract In this study, we investigated the impact of single stress (negative gate bias stress) and combined stress (both negative gate bias stress and drain voltage stress) on the instability of the threshold voltage (VTH) on p-GaN gate HEMT devices during dynamic switching operation. The dynamic VTH shift during pulsed negative gate bias stress was investigated for the first time. The VTH exhibits an initial rapid increase upon the initiation of stress and a slight decrease with increasing stress time. For the applied stresses of VGS = -1/-2/-3 V, the VTH shift values were, respectively, 0.12/0.16/0.19 V at the stress time of 100 s. Under the stress of VGS = -3 V and VDS = 100 V, the shift value of VTH was 0.61 V. After the combined stress, the saturation and off-state leakage currents exhibited a significant reduction, with the latter decreasing by one order of magnitude after the reverse voltage stress. When only a negative gate bias stress is applied, the degradation of the device can recover quickly after the stress is removed. In contrast, the positive shift in VTH caused by the drain-voltage stress is difficult to recover. Furthermore, the mechanisms underlying the VTH shift mentioned above were explored. Under single-stress conditions, the shift in VTH is associated with shallow traps that trap electrons. Meanwhile, under the combined stress, the degradation of Vth was also affected by the deep-level traps.

Impact of electron velocity modulation on microwave power performance for AlGaN/GaN HFETs

In this study, we demonstrate the effects of electron velocity modulation (Δve/ΔVgs) on the microwave power performance for AlGaN/GaN HFETs. In order to conduct the experiments, AlGaN/GaN HFETs with gate lengths ranging from 500 to 80 nm were fabricated. Electron transport was investigated by coupling a drift-diffusion solver with the Monte Carlo method. As gate lengths (Lg) varied from 500 to 200 nm, the increased polarization Coulomb field scattering led to an increase in Δve/ΔVgs and the stronger electric field (E) increased ve and enhanced the transconductance (gm), which in turn led to a greater power gain (Gp) in the HFETs. The higher power output (Pout) was also due to the increased ve that boosted the saturated output current (Ids,sat). The unique phenomenon that occurs from electron velocity modulation of AlGaN/GaN HFETs at electron densities (ns) < 3.42 × 1012cm−2 can be used as an effective mechanism to enhance the power gain of AlGaN/GaN HFETs.

Structural and Electrical Characterization of Solution‐Deposited β‐Ga2O3:Al

The wide bandgap oxide semiconductor thin films are synthesized using tetrahydroxogallate (III) ammonium {NH4Ga(OH)4} precursor at a concentration of 10 at% Ga and varying amounts of hydrated aluminum nitrate between 0.6 and 3.2 at%. Thin films of β‐Ga2O3:Al are synthesized by spin coating and spray pyrolysis with postannealing in nitrogen ambient at 930 °C. The structural properties of the thin films are investigated using XRD and Raman spectroscopy, while the electrical characteristics are determined using 4‐point probe, current–voltage (I–V), and capacitance–voltage (C–V) measurements with Ti/Al/Ni/Au Ohmic contacts and Pd/Au Schottky contacts. The β‐Ga2O3 with 2.2 at% Al is found to be the optimal concentration in this study, resulting in ideality factors of 1.10 and 1.09, saturation currents of 3.17 × 10−6 and 3.10 × 10−6 A, Schottky barrier heights of 0.73 and 0.88 eV, and series resistances of 948 and 955 Ω, for the spin‐coated and pyrolytically sprayed samples respectively.

Interpretation of the degradation and trends in the performance of heterojunction silicon solar cells at low temperature

A compact model that combines numerical simulations using AFORS-HET and accurate equivalent circuit modelling is proposed and used to interpret the origins of the degradation and anomality's in the performance of the a-Si:H/c-Si heterojunction solar cells and its parameters at low temperature. The interpretations are applied to several trends reported on real cells. It is shown that as T decreases the a-Si:H(i) layer is depleted gradually from holes and that the cell operation fails once the layer is totally depleted and becoming intrinsic. The failure is caused by a substantial and sharp increase in the cell series resistance causing the collapse of the fill factor and of the cell current. It is found that at low temperature the open circuit voltage is significantly affected and its temperature dependence strongly distorted by hole depletion in the a-Si:H(i) spacer especially when the TCO work function is not appropriate. It is aslo shown that the S-shape in the cell I-V characteristics under illumination is closely linked to the TCO barrier reverse saturation current which explains its higher probability of appearnce at low temperature. Finally, it is concluded that the HJT cell would perform optimally down to the low 200 K range when the a-Si:H(p) is heavily doped and the front contact is ideally ohmic. Failing to satisfy such conditions the temperature range in which the HJT cell is useful is very limited.

Barrier height modulation in Amorphous IGZO/Metal interface using Trichlorosilane-Based Self-Assembled monolayers

Amorphous InGaZnO (a-IGZO) has become a key material for thin-film transistors (TFTs) due to its high mobility, low leakage current, and optical transparency. However, the increasing demands for ultra-high-resolution displays, such as those required for virtual and augmented reality applications, pose challenges related to contact resistance and Fermi level pinning at the a-IGZO/metal interface, as TFTs are scaled down. To address these challenges, we investigated trichlorosilane-based self-assembled monolayers (SAMs) as an interfacial layer between a-IGZO and metal contacts (Al, Ag, and Ni). By employing SAMs with varying carbon chain lengths—methyl trichlorosilane (MTS), octyl trichlorosilane (OTS), and octadecyl trichlorosilane (ODTS)—we aimed to improve interface properties and reduce contact resistance. Our study comprehensively analyzed thermionic emission characteristics, including barrier height, saturation current, ideality factor, and contact resistance, across different metal electrodes. The results show that the SAM layers effectively modulate barrier height and Fermi level pinning, depending on the combination of SAM layers (MTS, OTS, and ODTS) and metal electrodes (Al, Ag, and Ni). Additionally, the study provides insights into the influence of SAM carbon chain length on direct tunneling current and interface passivation, and contributes to a deeper understanding of conduction mechanisms at a-IGZO/metal interfaces.

Numerical Modelling of Carrier Transport in Organic Field Effect Transistors

Background: Organic field effect transistors (OFETs), used in the fabrication of nanosensors, are one of the most promising devices in organic electronics because of their lightweight, flexibility, and low fabrication cost. However, the optimization of such OFETs is still in an early stage due to the minimal analytical and numerical models presented in the literature. Objective: This research presses to demonstrate a numerical carrier transport model based on the finite element method (FEM) to investigate the I-V characteristic of OFETs. Methods: Two various organic semiconductor materials have been included in the study, polyaniline and pentacene, where micro-scale, as well as nano-scale models have been presented. OFETs regarding channel length, dielectric thickness, and doping level impact have been studied. We nominated the threshold voltage, the on/off current ratio, the sub-threshold swing, and the field effect mobilities as the primary output evaluating parameters. Results: The numerical model has shown the criticality of the doping effect on tuning the device flowing drain current to exceed 300 μA saturation current, along with a threshold voltage of -0.1 V under a channel length of 30 nm. Conclusion: The study highlights the effectiveness of polyaniline over pentacene as nano-channel length OFET due to the boosted conductivity of polyaniline concerning pentacene.

A fast-switching and short-circuit enhanced SOI LIGBT with a Self-Driving P-MOS

A fast-switching and short-circuit enhanced LIGBT with integrated Self-Driving P-channel MOS, named SDP-LIGBT is demonstrated by the TCAD SENTAURUS. The SDP consists of P + Emitter (Drain), N-type Carrier Store (N-CS Substrate) and P-shield (Source), and the gate of the SDP (PG) is shortly connected with the P + Emitter, thus the VPG,S equals VDS. Consequently, the SDP can be triggered on with saturate state without extra control signal. At the forward conduction, the SDP is automatically turned on with the increased VCE, then the saturation current is remarkably decreased due to division of LIGBT part and SDP part. Moreover, the N-CS substrate of the SDP acts as the hole barrier, which further decreased the on-state voltage drop (VON). At the turn-off process, the SDP is also automatically turned on to extract excessive carriers with the increased bus voltage VCE, thus the turn-off speed and turn-off energy loss (EOFF) is effectively reduced. As a result, the SDP-LIGBT achieves superior trade-off relationship between VON and EOFF. Furthermore, the short-circuit property of SDP-LIGBT is also significantly enhanced.

Simulation study of a novel GaN on Si Quasi‐Vertical Reverse‐Conducting Insulated Gate Bipolar Transistor

Abstract In this paper, a novel GaN on Si quasi-vertical reverse conducting insulated gate bipolar transistor(RC-IGBT) with a new NPN structure is proposed and simulated by Silvaco TCAD. The distinctive feature of this structure lies in fabricating the original bottom P-Collector on the wafer surface. In comparison to conventional IGBT devices with PNPN structures, this NPN structure overcomes two major challenges: the difficulty in forming ohmic contacts due to the activation difficulty of the bottom P-GaN and the necessity of creating backside through-holes for electrode formation. Simultaneously, the N-GaN in the emitter and reverse-conducting regions can be selectively regrown through Metal-Organic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MBE), avoiding the etching effect of top-layer N-GaN on P-GaN during the fabrication of P-type electrodes. This approach demonstrates a high level of process feasibility. In this paper, Silvaco TCAD is used to simulate the static and dynamic characteristics of this novel quasi-vertical RC-IGBT device. The simulation results reveal that the device has a high saturation current(Ion,sat) density of 18224.67A/cm2 at Vge=14V,a threshold voltage (Vth) of 5V,a breakdown voltage of 828V,a latch-up voltage of 800V ,and a switching speed of nanoseconds. In addition, the selection of device parameters is studied in this paper.

Fast and Optimal Extraction for Sparse Equality Graphs

Equality graphs (e-graphs) are used to compactly represent equivalence classes of terms in symbolic reasoning systems. Beyond their original roots in automated theorem proving, e-graphs have been used in a variety of applications. They have become particularly important as the key ingredient in the popular technique of equality saturation, which has notable applications in compiler optimization, program synthesis, program verification, and symbolic execution, among others. In a typical equality saturation workflow, an e-graph is used to store a large number of equalities that are generated by local rewrites during a saturation phase, after which an optimal term is extracted from the e-graph as the output of the technique. However, despite its crucial role in equality saturation, e-graph extraction has received relatively little attention in the literature, which we seek to start addressing in this paper. Extraction is a challenging problem and is notably known to be NP-hard in general, so current equality saturation tools rely either on slow optimal extraction algorithms based on integer linear programming (ILP) or on heuristics that may not always produce the optimal result. In fact, in this paper, we show that e-graph extraction is hard to approximate within any constant ratio. Thus, any such heuristic will produce wildly suboptimal results in the worst case. Fortunately, we show that the problem becomes tractable when the e-graph is sparse, which is the case in many practical applications. We present a novel parameterized algorithm for extracting optimal terms from e-graphs with low treewidth, a measure of how “tree-like” a graph is, and prove its correctness. We also present an efficient Rust implementation of our algorithm and evaluate it against ILP on a number of benchmarks extracted from the Cranelift benchmark suite, a real-world compiler optimization library based on equality saturation. Our algorithm optimally extracts e-graphs with treewidths of up to 10 in a fraction of the time taken by ILP. These results suggest that our algorithm can be a valuable tool for equality saturation users who need to extract optimal terms from sparse e-graphs.

Role of oxide charges on the voltage and current coupling effects between adjacent devices examined by concentric metal-insulator-semiconductor (MIS) tunnel diodes with ultra-thin oxide

The impacts of positive oxide charges within the silicon oxide (SiO2) layer on the coupling mechanism in metal-insulator-semiconductor (MIS)-coupled devices were studied. By employing the post-metallization annealing (PMA) process, the condition of coupled devices with fewer oxide charges was established. In terms of coupled voltage, the presence of oxide charges facilitated the transmission of gate voltage-induced quasi-Fermi level splitting to neighboring devices, resulting in the induction of coupled voltage. Conversely, with few oxide charges, no coupled voltage was observed at the neighboring device. Additionally, positive oxide charges induced an inversion channel at the silicon surface, fostering the sharing of minority carriers in the conducting channel between adjacent devices. The saturation currents of non-PMA devices were 104 times larger than PMA devices. Less oxide charge will induce less coupling. These mechanisms were validated through TCAD simulations. Furthermore, the impact of oxide charges on photo-sensing was discussed, revealing that oxide charges enhanced the light absorption area and increased photon-induced carriers. However, the PMA devices showed a larger light-to-dark current ratio (>300) due to a smaller dark current.

Photodetector performance analysis of a hybrid MnPc/DLC device with high photoresponsivity, sensitivity, and On/Off ratio

The fabrication and characterization of high-performance devices for optoelectronic applications, particularly their response to incident light, are crucial. In this study, a MnPc/DLC device was fabricated using thermal evaporation and magnetron sputtering techniques, and its fundamental optoelectronic properties were characterised. Key diode parameters including barrier height, ideality factor, reverse saturation current, series resistance, and shunt resistance were determined using several methods, such as TE, Ohm's Law, the modified Norde method, and the Mikhelashvili method. The results from these methods were found to be consistent with varying light intensities. Additionally, photodetector parameters of the MnPc/DLC device were measured at ±1 V under light intensities of 20, 40, 60, 80, and 100 mW/cm2, and the findings were compared with the literature. The maximum values for photocurrent, photoresponsivity, photosensitivity, specific detectivity, and on/off ratio were 6.41 × 10−2 A, 2.49 A/W, 2.02 × 105, 5.8 × 109 Jones and 2.06 × 103, respectively. Notably, the photocurrent, photoresponsivity, photosensitivity, and on/off ratio values were found to be significantly higher and more promising compared to those reported in the literature.

Electrochemical DNA hybridization signal amplification system using methylene blue and ascorbic acid

This study presents a method for real-time monitoring of heterogeneous DNA hybridization using chronoamperometry (CA). The electrochemical assay is based on methylene blue (MB)-labeled ssDNA target (tMB) hybridization with a complementary ssDNA capture probe (p) chemisorbed to a gold electrode through the Au-S linkage. Real-time monitoring of nucleic acid binding is enabled by introducing ascorbic acid (AA) during CA measurements at oxidative potential. After hybridization, the newly formed MB-labeled double stranded DNA (ptMB) oxidized AA and, as a result, shuttled the electrons directly to the electrode. AA-ptMB electrocatalytic cycle allows amplifying the signal from hybridized MB-labeled DNA through oxidation of AA. The process consists three particular processes: hybridization of tMB to the surface probe, reaction between AA and ptMB, and (c) the electron transfer from ptMB to the electrode. We have demonstrated that system is limited by the AA-ptMB redox reaction (bimolecular constant, k = 8 ± 0.1 M–1 s–1). AA-ptMB cycle is sequence-specific, thus fully developed current saturation curves can be used to calculate hybridization parameters and evaluate binding kinetics under various conditions. In addition, evaluating the initial hybridization rate allows quantifying the concentration of labeled ssDNA (tMB) in several minutes. This study provides the first report of a simple electrocatalytic cycle between MB-labeled DNA and a reducer AA for monitoring DNA hybridization in real time.

Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer.

In this paper, a novel AlGaN/GaN HEMT structure with a P-GaN buried layer in the buffer layer and a locally doped barrier layer under the gate (PN-HEMT) is proposed to enhance its resistance to single event transient (SET) effects while also overcoming the degradation of other characteristics. The device operation mechanism and characteristics are investigated by TCAD simulation. The results show that the peak electric field and impact ionization at the gate edges are reduced in the PN-HEMT due to the introduced P-GaN buried layer in the buffer layer. This leads to a decrease in the peak drain current (Ipeak) induced by the SET effect and an improvement in the breakdown voltage (BV). Additionally, the locally doped barrier layer provides extra electrons to the channel, resulting in higher saturated drain current (ID,sat) and maximum transconductance (gmax). The Ipeak of the PN-HEMT (1.37 A/mm) is 71.8% lower than that of the conventional AlGaN/GaN HEMT (C-HEMT) (4.85 A/mm) at 0.6 pC/µm. Simultaneously, ID,sat and BV are increased by 21.2% and 63.9%, respectively. Therefore, the PN-HEMT enhances the hardened SET effect of the device without sacrificing other key characteristics of the AlGaN/GaN HEMT.

Analysis of influencing factors of risk perception among emergency nurses in China: An observational study.

To understand the current saturation of emergency nurses' risk perception and its influencing factors, and to explore the correlation between emergency nurses' risk perception and nurse's safety behavior. This study is a cross-sectional study. From January 2024 to February 2024 using the questionnaire star online survey method. The convenience sampling method was used to survey nurses in the emergency departments of 5 hospitals in China. Male and female emergency nurses (n = 189) from China were included in the final sample. Nursing risk perception questionnaire and nurses safety behavior scale were used for evaluation. The collected data were comprehensively analyzed using various statistical methods, including descriptive analysis, 2 independent samples t-test mean comparison, 1-way analysis of variance for differences, multiple linear regression analysis to identify influencing factors, and Pearson correlation analyze correlations. All analyses were performed using SPSS version 26.0, and P < .05 was considered statistically significant (2-sided). The emergency nurses score was (87.08 ± 20.18) on the risk perception scale, scoring rate 62.2%. The results of multiple regression showed that age, marital status, education level, professional title, monthly income level, and safety behaviors were the main factors influencing the risk perception of emergency nurses (P < .05). The results of correlation analysis showed a positive correlation between the dimensions of nurses' risk perception and safety behaviors (R = 0.636, P < .01). Age, marriage, education level, years of work experience, professional title, duties. engagement type, monthly income level, participation in teaching work, safety training, and no adverse events were the influencing factors of risk perception. The research results emphasize that risk perception of emergency nurses has a positive prediction effect on safe behavior. It is suggested that nursing managers should optimize nursing workflow and human resource allocation, strategically add occupational risk training to vocational training, and strengthen nurses' safety behaviors.

Restoration of the current transformer secondary current under core saturation conditions based on ANN

Relay protection and emergency automation is an integral part of electric power systems. The algorithms of the relay protection and emergency automation are based on the use of analysis of the parameters of the electrical mode - current and voltage - obtained from current and voltage instrument transformers. As a rule, these transformers operate on the basis of the laws of electromagnetism. Operational experience shows that the magnetic core of current transformers under fault conditions can be saturated. As a result, the shape of the measured current is distorted which can lead to false operation of the relay protection and emergency automation system. In this paper a comparative analysis of the existing methods is presented. The advantages and disadvantages of them are described. The problem of current transformer core saturation is reduced to a regression problem. To solve the problem an artificial neural networks-based method is proposed. Computational experiments for both proposed and existing methods are performed. The results of experiments show that the efficiency of the proposed method is 1.25 times higher relative to the most effective existing method. The method of re-scaling data at real-time work applied to the restoration of the distorted shape of current is proposed.

Phase Separation Manipulated Gradient Conductivity for A High‐Precision Flexible Pressure Sensor

AbstractPiezoresistive pressure sensors, analyzing and converting external pressure signals to readable electrical signals for monitoring human health, are always subjected to simultaneously possess high signal‐linearity and signal sensitivity. Analogous to the control of sophisticated microstructure for increasing active sensing area, the control of gradient conductivity should enable a linear response via regulating the formed saturation current. Here, inspired by phase separation showing the feasibility of controlling material microstructure and conductivity, a high‐performance flexible pressure sensor via the simultaneous control of microgroove structure and wide‐range gradient conductivity is demonstrated. First, a laser‐etching and dopamine (DA)‐doping synergistic approach is used to induce selective phase separation in poly(3,4‐ethylenedioxythiophene): poly(styrenesulfonic acid) (PEDOT:PSS), achieving broad conductivity modulation (from 297 to 4525 S cm−1) and precise microgroove pattern (15.5 µm). Then, by designing conductivity‐gradient PEDOT: PSS‐based multi‐sublayers and microgroove interlocked structure, the sensor shows extraordinarily comprehensive performance of excellent stress‐sensing sensitivity (4 × 105 kPa−1), high linear responsiveness (99.85%) and wide‐range sensing ability (up to 100 kPa). Consequently, this sensor reveals excellent capability in detecting multi‐mode pressure changes and is expected to branch out into other electronic device designs as a general strategy for the precise manipulation of material physical‐chemical properties.

Modelling and Evalaution of the Bidirectional Surge Current Robustness of Si(-IGBT and -Diode), SiC(-MOSFETs and -JFET) and GaN(-HEMTs) Devices

This paper will evaluate the surge current robustness of different devices in relation to the active short circuit (ASC). For the purposes of this study, a Si IGBT and its diode, two SiC MOSFETs with different voltage ratings, a SiC JFET, and three GaN HEMTs will be compared. For the GaN devices, a eMode, a dMode, and a cascode device are employed. With the exception of the Si diode, all devices exhibited a current saturation effect. This saturation will result in significant losses and, ultimately, a thermal defect. For all devices, a safe operating area (SOA) criterion is established. For the SiC and GaN devices, the saturation voltage can be employed to define the safe operating area (SOA) criterion. In this context, two on-state resistance models will be defined for these devices. One is solely temperature-dependent, while the other also considers current saturation. Consequently, the saturation voltage and the on-resistance model represent a straightforward methodology for evaluating the ASC robustness of the devices. For all devices, a recommendation for a loss model and SOA criterion will be provided. Finally, the surge current robustness of all devices is compared. The Si, SiC and GaN devices exhibit comparable high surge current robustness in the application, with the exception of the GaN eMode, which is susceptible to strong current saturation.

A Study on the Impact of Different PV Model Parameters and Various DC Faults on the Characteristics and Performance of the Photovoltaic Arrays

PV systems play a vital role in the global renewable energy sector, and they require accurate modeling and reliable performance to maximize the output power. This research presents a thorough analysis and discussions on the effects of different PV models’ parameters and certain specific faults on the performance and behavior of the photovoltaic systems under different temperature and irradiation conditions. It provides a detailed analysis of how several parameters affect the performance of the PV arrays, for instance, the series resistance, shunt resistance, photocurrent, reverse saturation current, and the diode ideality factor. These parameters were extracted mathematically and verified with the help of wide-ranging simulations and practical experiments. Additionally, the investigation of the effect of DC faults, including line-to-line, line-to-ground, partial shading, and complete shading faults on PV arrays, provides important fundamentals for fault detection and classification, thus improving the efficiency and protection of PV systems. It can, therefore, be stated that the outcomes of this research will assist in the enhancement of PV systems in terms of design, operation, and maintainability of photovoltaic plants, as well as contribute positively to the advancement of sustainable solar energy technology.

Hourglass transistor: An alternative and improved MOS structure robust to total ionization dose radiation

This paper presents a novel MOSFET layout named the “hourglass transistor”, aimed to improve its electrical behavior under Total Ionizing Dose (TID) effects. The new radiation-tolerant device is based on augmenting parasitic channel resistance, alteration of the electric field by the longitudinal corner effect (LCE), and reducing channel resistance within the central gate region. The radiation-robust MOS structure design was implemented in a 130 nm CMOS bulk process and its performance was analyzed through simulations using 3D physical models. The proposed hourglass transistor was compared with rectangular, diamond, dog bone and H-gate devices, showing a reduction in the post-radiation Ioff current of 8.77, 4.6, 1.85 and 13.7 times, respectively; and a pre-radiation normalized saturation current of 2.29, 1.04, 1.58 and 1.52 times greater with an increase of 4.84, 1, 2.47 and 2.03 times the gate area, respectively.

The effect of Cu-doping to the DLC interlayer on the temperature dependent current-conduction mechanisms and barrier shape of the Schottky devices

The objective of this study is to determine the temperature and voltage-dependent current conduction mechanisms (CCMs) of the Al/Cu-doped DLC/p-Si Schottky device. It is aimed to obtain extensive and detailed data by current-voltage (I–V) measurements taken with 0.3 V voltage steps in the ±4 V voltage range, at 30 K intervals from 80 K to 410 K. Firstly, an examination of the semi-logarithmic I–V curve revealed that the low temperature (LTs, 80 K–170 K), medium temperature (MTs, 200 K–290 K) and high temperature (HTs, 320 K–410 K) regions should be examined separately. The basic parameters of the Schottky device such as the ideality factor (n), reverse saturation current (Io) and zero-biasing potential barrier height (ΦBo) were obtained separately for LTs, MTs and HTs by the Thermionic Emission (TE) theory. The results obtained show that the device deviates from ideality, especially in LTs and HTs, and the n values decrease with increasing temperature, while the ΦBo values increase. The analysis of the presence of other CTMs in the Schottky device revealed that Field Emission (FE) and Thermionic Field Emission (TFE) were effective in LTs and MTs, while FE was effective in HTs. Since it is thought that quantum mechanical CTMs cannot be the cause of such a deviation from ideality due to the interface layer thickness, the existence of Gaussian Distribution originating from lateral barrier inhomogeneity was investigated. As a result, it is concluded that the Multiple Gaussian Distribution (MGD) is dominant in the possible CTMs of the Schottky device.