Sapphire Substrates Research Articles

Mechanism of Thermodynamically Rationalized Selective Growth of a Two-Dimensional Ternary Ferromagnet on Insulating Substrates.

Two-dimensional (2D) semiconducting ferromagnet Fe3GeTe2 holds great promise for advanced spintronic applications because of its gate-tunable ferromagnetic ordering at room temperature, whereas the controllable growth of large-area single crystals remains very challenging due to its ternary nature and variable stoichiometry inducing many competitive phases. Here, we theoretically probe the mechanism of selective growth of monolayer Fe3GeTe2 on various epitaxial substrates. Thermodynamic analysis shows that the corresponding phase-pure chemical potential windows for the selective growth of Fe3GeTe2 can be reasonably attained in ternary phase space on insulating and chemically inert c-plane sapphire and Ga2O3(0001) substrates by properly modulating the interfacial interaction and employing suitable feedstocks to avoid competitive growth of possible impurity phases with different stoichiometry ratios. It is also revealed that both the weak edge-substrate interaction and interlayer coupling of Fe3GeTe2 together lead to a surface-dominated nucleation behavior and, thereby, energetically favor lateral growth of the monolayer rather than vertical growth of the multilayer. Importantly, straight protocols for the experimentally selective growth of phase-pure ternary Fe3GeTe2 are also provided by establishing the relationship between the feedstock chemical potential and growth parameters on a thermochemical basis. Our insightful study can also be reasonably extended to guide future experimental design for the selective growth of other multicomponent 2D materials.

Twin-free thermal laser epitaxy of Si on sapphire

The heteroepitaxial growth of silicon (Si) is essential for modern electronics. Our study investigates the potential of thermal laser epitaxy (TLE) for Si epitaxy. A systematic study on the evaporation behavior of Si during TLE identifies and addresses the causes of notable flux rate fluctuations, resulting in a Si flux with ±0.3% stability over time. We also demonstrate heteroepitaxy of Si on c-plane sapphire substrates via TLE. High-temperature substrate preparation combined with deposition at a substrate temperature of 1000 °C produced high-quality epitaxial Si (111) films without twin domains.

High Luminescence Saturation Y3Al5O12: Ce3+‐Diamond Composite Color Converter for High‐Brightness Laser‐Driven White Lighting

AbstractPhosphor‐converted laser lighting confronts enormous challenges in the development of color converters with high luminescence saturation owing to the thermal issues from laser irradiation and phosphor conversion. Herein, a high luminescence saturation Y3Al5O12: Ce3+‐diamond (YAG‐diamond) composite color converter by introducing diamond particles in phosphor‐in‐glass film (PiGF) coated on transparent sapphire substrate is proposed for high‐brightness laser‐driven white lighting. By optimizing the diamond content to 6 wt.%, the YAG‐diamond converter shows a thermal conductivity (TC) of 14.7 W·m−1·K−1 and displays higher luminescence intensity at 175 °C (1.15 times that at 25 °C). Under laser excitation, the YAG‐diamond converter achieves a luminous flux (LF) of 1990 lm at the laser power density (LPD) saturation threshold (ST) of 24.82 W·mm−2, which is far better than the PiGF@sapphire converter with a LF of 1364 lm@17.64 W·mm−2. The laser‐driven converter yields stable white laser light with a correlated color temperature (CCT) of 5714 K and a chromaticity coordinate of (0.3278, 0.3372) at the ST of 24.82 W·mm−2. Furthermore, the working temperature of the converter is decreased by 59 °C (26.6%) under LPD of 10.89 W·mm−2. These results indicate that the proposed YAG‐diamond composite converter displays excellent opto‐thermal performances, which may be a promising luminescence material in high‐brightness white laser lighting.

Fractal analyses of AlxGa1−xN thin film surfaces on AlN at different annealing temperatures

The determination of heteromorphological structures formed on the surface during annealing of AlxGa1−xN thin film grown on sapphire substrate using the metal organic chemical vapor deposition technique at different temperatures was investigated by fractal analysis method. The images of the surfaces of the thin films were taken by atomic force microscopy (AFM) at temperatures of 900, 1000, 1050 and 1200 °C respectively. AFM images were digitised in bitmap format according to the annealing temperatures. It was determined that the fractal dimensions obtained a linear correlation with the annealing temperatures. The results confirm the hypothesis that surface relaxation by the thermal action can produce fractal-like structures at particle or cluster boundaries. It is found that the observed cluster formation of superficial particles decreases as increasing temperature. The increase in temperature reduces the rate of superficial particle coating. To determine the surface roughness of the AlxGa1−xN thin film according to the annealing temperature, the AFM images were digitized in tagged image file format and the statistical root mean square, mean value, mean roughness, skewness and kurtosis values of the films were calculated. The roughness is a result of the thin film surface heteromorphology formed due to the specific annealing process. It is proved that the fractal dimensions of the AlxGa1−xN thin film increase as the annealing temperature rises. The particles coalesce on the surface and cluster in different types and sizes at each different annealing temperature, forming islets of different sizes. The skewness and kurtosis values show a different and irregular change.

Cr2O3–NiO mixed oxides thin films for p-type transparent conductive electrodes

The Cr2O3–NiO mixed oxides’ thin films were formed by means of the layer-by-layer magnetron sputtering deposition of Cr2O3, NiO, and Cr2O3 layers on c-plane sapphire substrates. These thin-film structures, subjected to subsequent annealing, constituted a combination of the monocrystalline (0001) Cr2O3 and nonordered nickel oxide phase, which was a mixture of NiO and Ni2O3. The annealing at 900 and 1000 °С in air facilitated the diffusion of Ni and Cr atoms into the layers. Varying the annealing time allowed us to control the uniformity of the Ni and Cr distribution, the microrelief of the film surface, the transmittance in the visible region, and the sheet resistance of the Cr2O3–NiO thin-film structures. Thus, the films annealed at 900 °C during 30 min were characterized by a uniform distribution, a relatively weakly developed surface, a low sheet resistance, and the highest Haacke's Figure of Merit of 1.49 × 10–9 Ω–1. The formation of mixed Cr2O3–NiO oxides by the proposed approach was found to be an effective way to improve the performances of Cr2O3 based p-type transparent conductive electrodes.

Synthesis of Arrayed Tungsten Disulfide Nanotubes.

Tungsten disulfide nanotubes (WS2-NTs), with their cylindrical structure composed of rolled WS2 sheets, have attracted much interest because of their unique physical properties reflecting quasi-one-dimensional chiral structures. They exhibit a semiconducting electronic structure regardless of their chirality, and various semiconducting and optoelectronic device applications have been demonstrated. The development of techniques to fabricate arrayed WS2-NTs is crucial to realizing the highest device performance. Since the discovery of WS2-NTs, various synthesis techniques have been reported; however, horizontally arrayed WS2-NTs have never been successfully synthesized. Here, we demonstrate a simple technique to synthesize arrayed WS2-NTs. Through precise temperature and gas control, W18O49 nanowires are grown along the [1̅101] direction on an r-plane sapphire substrate, and the nanowires are converted into nanotubes via sulfurization under optimized conditions. The demonstrated synthesis technique for arrayed WS2-NTs will play a central role in the fabrication of devices using transition-metal dichalcogenide nanotubes.

Hydrogen Confinement in Hexagonal Boron Nitride Bubbles Using UV Laser Illumination.

Hexagonal boron nitride (h-BN) bubbles are of significant interest to micro-scale hydrogen storage thanks to their ability to confine hydrogen gas molecules. Previous reports of h-BN bubble creation from grown h-BN films require electron beams under vacuum, making integrating with other experimental setups for hydrogen production impractical. Therefore, in this study, the formation of h-BN bubbles is demonstrated in a 20nm h-BN film grown on a sapphire substrate with a 213nm UV laser beam. Using atomic force microscopy, it is shown that longer illumination time induces larger h-BN bubbles up to 20µm with higher density. It is also demonstrated that h-BN bubbles do not collapse for more than 6 months after their creation. The internal pressure and gravimetric storage capacity of h-BN bubbles are reported. A maximum internal pressure of 41MPa and a gravimetric storage capacity of 6% are obtained. These findings show that h-BN bubbles can be a promising system for long-term hydrogen storage.

Influence of Synthesis Parameters on Structure and Characteristics of the Graphene Grown Using PECVD on Sapphire Substrate.

The high surface area and transfer-less growth of graphene on dielectric materials is still a challenge in the production of novel sensing devices. We demonstrate a novel approach to graphene synthesis on a C-plane sapphire substrate, involving the microwave plasma-enhanced chemical vapor deposition (MW-PECVD) technique. The decomposition of methane, which is used as a precursor gas, is achieved without the need for remote plasma. Raman spectroscopy, atomic force microscopy and resistance characteristic measurements were performed to investigate the potential of graphene for use in sensing applications. We show that the thickness and quality of graphene film greatly depend on the CH4/H2 flow ratio, as well as on chamber pressure during the synthesis. By varying these parameters, the intensity ratio of Raman D and G bands of graphene varied between ~1 and ~4, while the 2D to G band intensity ratio was found to be 0.05-0.5. Boundary defects are the most prominent defect type in PECVD graphene, giving it a grainy texture. Despite this, the samples exhibited sheet resistance values as low as 1.87 kΩ/□. This reveals great potential for PECVD methods and could contribute toward efficient and straightforward graphene growth on various substrates.

Effect of post-deposition annealing on crystal structure of RF magnetron sputtered germanium dioxide thin films

In this work, we demonstrate the growth and phase stabilization of ultrawide bandgap polycrystalline rutile germanium dioxide (GeO2) thin films. GeO2 thin films were deposited using RF magnetron sputtering on r-plane sapphire (Al2O3) substrates. As-deposited films were x-ray amorphous. Postdeposition annealing was performed at temperatures between 650 and 950 °C in an oxygen or nitrogen ambient. Annealing at temperatures from 750 to 950 °C resulted in mixed-phase polycrystalline films containing tetragonal (rutile) GeO2, hexagonal (α-quartz) GeO2, and/or cubic (diamond) germanium (Ge). When nitrogen was used as the anneal ambient, mixed GeO2 phases were observed. In contrast, annealing in oxygen promoted stabilization of the r-GeO2 phase. Grazing angle x-ray diffraction showed a preferred orientation of (220) r-GeO2 for all crystallized films. The combination of O2 annealing and O2 flux during growth resulted in r-GeO2 films with highly preferential alignment. Using electron microscopy, we observed an interfacial layer of hexagonal-oriented GeO2 with epitaxial alignment to the (11¯02) Al2O3 substrate, which may help stabilize the top polycrystalline r-GeO2 film.

Influence of bottom supporting columns and cooling rate on the surface shape characteristics of sapphire substrates

The manufacturing process of sapphire substrates involves several key steps, including epitaxy, annealing, cutting, and processing. Among these, epitaxy and annealing are particularly crucial. The temperature variances along both the longitudinal and transverse axes within the furnace during the crystallization process play a significant role in determining the crystallization rate and internal structure of sapphire crystals. Furthermore, annealing sapphire serves to alleviate internal stress, enhance crystal structure, optimize physical properties, improve optoelectronic characteristics, enhance surface quality, and increase overall yield. This step is paramount in enhancing the performance and application value of sapphire materials. In order to investigate and optimize the effects of different thermal conductivities of support columns at the base and various annealing procedures on the surface characteristics of sapphire substrates, thereby improving product quality, this study conducted research by utilizing support columns made of different materials and carefully controlling the cooling rate parameters for sapphire. The findings revealed that using graphite as the base support column for the crystal furnace can reduce both the longitudinal and transverse temperature gradients within the furnace, consequently promoting crystal growth and enhancing the quality of sapphire ingots. Additionally, sapphire chips annealed using the rapid one-step annealing program exhibited the highest average warpage and bending rate variation, reaching 2.0 μm, and the average dislocation density was half that of conventionally produced chips, at 108.89 pits/cm2.

4-inch 11 μm high-quality AlN thick films grown on nanopatterned sapphire substrates

4-inch 11 μm high-quality AlN thick films grown on nanopatterned sapphire substrates

A potential mechanism for abnormal grain growth in Ni thin films on c-sapphire

Normal grain growth (NGG) of a (111) textured Ni film on c-sapphire and abnormal grain growth (AGG) of (100) grains at the expense of this (111) texture has been studied as a function of temperature with and without a capping layer. The grain boundaries (GBs) in the Ni film are controlled by the preferred orientation relationships (ORs) adopted by the Ni grains on the sapphire substrate. The 2 variants of a single OR, Ni(111)<11¯0>//Al2O3(0001)<11¯00>, form a (111) mazed bicrystal with Σ3 GBs. The (100) grains have a single OR, Ni(100)<010>//Al2O3(0001)<11¯00> with 3 variants; their GBs within the (111) grains have the (111)<11¯0>//(100)<010> misorientation.(100) AGG within the (111) mazed bicrystal of the 100 nm Ni film takes place above 1023 K. The orientation transition is driven by the biaxial elastic modulus anisotropy which favors the growth of (100) grains over (111) grains, as this reduces the elastic strain energy induced by the thermal mismatch between Ni and sapphire. (100) AGG is suppressed and the NGG of the (111) texture is slowed down when the film is covered by a 10 nm amorphous alumina layer aimed at inhibiting surface diffusion. Thus, it is proposed that as long as the surface can act as a sink for the point defects diffusing along the GBs, the movement of the GBs is correlated to the diffusivity of atoms and vacancies, which is a function of their misorientation and crystallographic GB structure.

Deep Traps in AlN Hydride Vapor Phase Epitaxy Film on Low-Temperature AlN/Sapphire

Deep trap states were examined in c-plane, Al-polar AlN epilayers, deposited via metal organic chemical vapor deposition on 270 nm thick AlN buffer layers on sapphire substrates. Contacts were created using e-beam deposited Ni through a shadow mask, with I-V characteristics revealing a trapped limited current (TLC) regime and voltage-dependent hysteresis upon light-emitting diode illumination. Thermally stimulated current and photothermal ionization current spectroscopy measurements demonstrated a prominent trap activation energy of approximately 0.75 eV and additional trap energies of 0.6, 0.4, 0.25, 1.05, and 1.1 eV. The observed differences in photocurrent responses between forward and reverse biases suggest that forward bias induces electron trapping at deeper levels, influencing the TLC behavior. Comparisons with bulk n-type AlN crystals from previous studies show similarities in deep trap spectra, suggesting commonality in trap characteristics across different AlN samples.

Optimized-selenization preparation and laser Q-switching characteristics of layered PtSe2

Abstract PtSe2 has high carrier mobility, excellent electrical and optical properties, and high potential in the field of optoelectronic devices. In this paper, the conventional selenization method is optimized and a single-temperature zone preparation is used to prepare large-area and homogeneous PtSe2 thin-film materials on sapphire substrates in a shorter time and at a lower temperature. The prepared sample is characterized by optical microscopy, atomic force microscopy, Raman spectroscopy and Z-scan method. The saturable absorption properties of layered PtSe2 as a passive Q-switched are investigated in a solid-state laser. The results show that the PtSe2 thin film material is synthesized at 400 °C for 1 h to cover the entire one-inch sapphire wafer with a thickness of about 25 nm and the surface roughness is 13.1 nm. The modulation at 1064 nm yielded an output pulse with a maximum repetition frequency of 688.47 kHz, corresponding to a pulse width of 202.5 ns, a peak power of 7.35 W, a single-pulse energy of 1.51 μJ, and a stable pulse train.

High-quality heteroepitaxial growth of β-Ga2O3 with NiO buffer layer based on Mist-CVD

The heteroepitaxial growth of β-Ga2O3 on the commonly used sapphire substrate presents great challenges due to their large lattice mismatch. To address this, a NiO buffer layer is proposed to improve the quality of the heteroepitaxial β-Ga2O3, as it has a lower lattice mismatch(0.46%) with β-Ga2O3 compared to sapphire(6.6%). Traditional epitaxial growth methods for Ga2O3 are not compatible with NiO growth, so an inexpensive, non-vacuum, and convenient Mist-CVD technology is used for heterogeneous β-Ga2O3 growth in this study. XRD and TEM results demonstrate the high quality of β-Ga2O3 sample with the clear interface between materials. Introducing a NiO buffer layer enables the Full Width at Half Maximum (FWHM) and root-mean-square (RMS) roughness of β-Ga2O3 to reduce from 0.726° to 0.514° and from 7.47 nm to 3.34 nm respectively. Additionally, through the UDM analysis model, micro-strain within the film is found to significantly decrease. This work proposes a novel approach to improve the quality of β-Ga2O3 heteroepitaxial growth on sapphire substrate, contributing to the advancement of Ga2O3 materials and devices.

UV-enhanced O2 sensing using β-Ga2O3 nanowires at room temperature

Oxygen sensors based on β-Ga2O3 nanowires were prepared by a chemical vapor deposition method and investigated in detail. β-Ga2O3 nanowires grew on sapphire substrate at 1100 °C with Au as a catalyst. The polycrystalline structure was confirmed according to the X-ray diffraction (XRD) patterns. Scanning electron microscope (SEM) images revealed the average diameter of the nanowires was 150 nm. The ratio of Ga to O was 0.765 according to energy dispersive spectroscopy (EDS) results. Photoluminescence emissions at 445 and 484 nm originated from oxygen vacancies and gallium-oxygen vacancy pairs. Both EDS results and photoluminescence revealed intrinsic oxygen vacancies in β-Ga2O3 nanowires. We coated the β-Ga2O3 nanowires on an interdigitated electrode to fabricated an oxygen sensor. Under ultraviolet light irradiation, at room temperature, the sensor’s response rise time and recovery time were 1034 s and 1283 s to 600 ppm oxygen, those were 1290 s and 1709 s to 1200 ppm oxygen. The mechanism of oxygen sensing was discussed.

Stimulated Brillouin Scattering Gain of Waveguides Calculated with Acoustic Perturbation Method

Abstract Stimulated Brillouin Scattering (SBS) is a phenomenon of energy transfer from an optical pump beam to longer wavelengths of light through its interaction with the medium via acoustic phonons. Previous studies have reported a calculation of the SBS gain based on the optical force approach, where the gain is not only affected by the classical paradigm of intrinsic material’s nonlinear effects in the form of electrostriction but also due to radiation pressure. In this work, the acoustic perturbation approach is applied in analyzing the optical and mechanical response of the waveguide, wherein calculating the scattering process, the changes of the waveguide structure due to photoelasticity (PE), termed Moving Boundary (MB), are considered. This acoustic perturbation method avoids uncertainties related to optical force contributions. To validate its applicability, the present method is used to calculate the SBS gain of various waveguide structures, namely an unsuspended Silicon nano-waveguide, ridge Lithium Niobate (LiNBO3) nano-waveguide on Sapphire (Al2O3) substrate and buried Arsenic trisulfide (As2S3) in Silicon dioxide (SiO2). The forward and backward SBS gain obtained using the present method of acoustic perturbation are similar to the reported values obtained from other methods of calculation as well as experiments.

Influence of Si flow rate on the performance of MOCVD-deposited Si-doped Ga2O3 films and the applications in ultraviolet photodetectors

In this work, the Metal-organic Chemical Vapor Deposition (MOCVD) technology was used to successfully grow Si-doped β-Ga2O3 films on C-plane sapphire substrates. The effects of Si flow rate on the surface morphology, crystal composition, electrical and optical properties of the films were characterized and analyzed. The experimental results show that the full width at half maximum (FWHM) and root mean square (RMS) of the films are improved with the decrease of Si flow rate. More importantly, only the sample with the lowest Si flow rate showed conductive ability, and its carrier concentration and mobility were 4.20 cm2/V·s and 3.33 × 1016 cm−3, respectively. In addition, we also made photodetectors corresponding to the thin films. The test results showed that the external quantum efficiency (EQE) and responsiveness (R) of the detectors improved with the decrease of Si flow rate.

Design and fabrication of integrated negative feedback resistor for InGaAs/InP avalanche photodiode

The serial resistor of alloy material can be integrated on negative feedback avalanche diodes to reduce afterpulsing effect. In this work, the influence of parasitic capacitance on the avalanche quenching resistor was theoretically analyzed. By using simulation model of device & circuit mixed-mode, the quenching capability of integrated resistors was evaluated with the parasitic parameters. For the material growth of feedback quenching resistor, thin film based on CrSi alloy was prepared by ion beam sputtering process, realizing the sheet resistance of 3 kΩ/square. The resistor material were sufficiently investigated by characterizing the morphology and element component. CrSi pattern of spiral shape was fabricated on sapphire substrate, realizing a resistor of the order of 500 kΩ in area of diameter 40 μm, which was equivalent to the active area of avalanche diodes. The electrical measurement indicated the excellent temperature stability of this integrated resistor, showing the promising application prospect for preparing high-performance negative feedback avalanche diodes.

Microwave loss and kinetic inductance of epitaxial TiN films

Abstract Low microwave loss and regulatable kinetic inductance are two key characteristics of superconducting films to manufacture high-performance quantum devices. Epitaxial titanium nitride (TiN) thin films have been found to exhibit significant advantages in these two aspects. In this paper, we investigated into the dielectric loss and kinetic inductance of epitaxial TiN films, which were prepared on both silicon and sapphire substrates with different temperatures. Crystal structure, surface morphology, and superconducting properties were characterized systematically. The radio-frequency response of microwave resonators made of TiN films was studied at low temperatures to extract the information of kinetic inductance and quality factor. We obtained the highest internal quality factor up to 1.6 × 10 6 at single photon regime and achieved a regulation of kinetic inductance exceeding 16 times by altering the substrate and the sputtering temperature of the TiN films. This work not only provides an essential foundation for the precise design and preparation of low-loss TiN resonators for superconducting quantum bits, but also demonstrates TiN film as an excellent material platform with both low microwave loss and high kinetic inductance that can be applied in other fields such as microwave kinetic inductance detectors.