Abstract
Abstract PtSe2 has high carrier mobility, excellent electrical and optical properties, and high potential in the field of optoelectronic devices. In this paper, the conventional selenization method is optimized and a single-temperature zone preparation is used to prepare large-area and homogeneous PtSe2 thin-film materials on sapphire substrates in a shorter time and at a lower temperature. The prepared sample is characterized by optical microscopy, atomic force microscopy, Raman spectroscopy and Z-scan method. The saturable absorption properties of layered PtSe2 as a passive Q-switched are investigated in a solid-state laser. The results show that the PtSe2 thin film material is synthesized at 400 °C for 1 h to cover the entire one-inch sapphire wafer with a thickness of about 25 nm and the surface roughness is 13.1 nm. The modulation at 1064 nm yielded an output pulse with a maximum repetition frequency of 688.47 kHz, corresponding to a pulse width of 202.5 ns, a peak power of 7.35 W, a single-pulse energy of 1.51 μJ, and a stable pulse train.
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