Silicon wafer solidification on a substrate remains an important research topic. One of the major applications is in the production of kerf-free silicon wafers. In this study, we carried out in situ observations and temperature measurements to better understand the growth mechanism of silicon wafers on substrates. Silicon nitride and quartz substrates at cooling rates ranging from 5 K/min to 100 K/min were considered. Visual observations revealed that the growth of silicon proceeded with nucleation of solid strips, i.e., dendrites, which initially grew axially at high rates before expanding laterally. Furnace cooling parameters and the extent to which the substrate can sustain the undercooling were found to dictate the ensuing mode of growth and the trends experienced therein. Undercooling estimates, recalescence rates, solidification densities, and growth kinetics were discussed to discern their interrelation and explain their effects to the resulting nucleation and wafer growth behavior. Increasing cooling rate and undercooling for nucleation were found to consistently increase grain frequency as confirmed by electron backscatter diffraction analysis. Prevalence of certain grain orientation and the consequent increase in Σ3 grain boundaries was also discerned due to the preference of dendritic strips growth.
Read full abstract