Rutherford Backscattering Spectrometry Spectra Research Articles

A machine learning approach to self-consistent RBS data analysis and combined uncertainty evaluation

We introduce a machine learning approach designed for the self-consistent analysis of data acquired through simultaneous Rutherford backscattering spectrometry (RBS) in multiple scattering geometries, with subsequent determination of the analysis uncertainty. Using a simulated data set, the successful self-consistent evaluation of up to six simultaneous RBS data collections was achieved by employing artificial neural networks (ANN). The results demonstrate enhanced accuracy and precision when concatenating multiple RBS spectra as input to the ANN. The precision was quantified through the combined uncertainty, encompassing the ANN random uncertainty, the ANN systematic uncertainty, and the model robustness. While applied to only RBS analysis, this approach holds promise for advancing the analysis of data collected by next-generation RBS equipment and Total ion beam analysis, offering a robust and efficient framework for future research.

Numerical simulation of proton backscattering spectra in GEANT4 toolkit


 
 
 Rutherford backscattering spectroscopy (RBS) is a widely used technique for the atomic-scale analysis of sample composition, lattice displacement and impurity profiling. RBS is based on the elastic scattering of incident charged particles by target nuclei and the subsequent detection of scattered particles. The interpretation of RBS spectra, however, poses challenges due to overlapping peaks, corresponding to scattering from different atomic species, and uncertainties from energy loss, scattering geometry and detector response. To address this, an open source simulation model based on the versatile GEANT4 simulation toolkit has been developed. The flexibility of the open source enables users to tailor the model to its specific requirements, such as the use of specific particle stopping powers, cross-sections, and physics processes. This work presents the results of the comparison between the experimental and simulated backscattering spectra in crystalline silicon, silicon carbide and silicon dioxide samples by 1–2.5 MeV energy protons, obtained in random orientation conditions. The results demonstrate the capability of the model to accurately simulate backscattering spectra in both amorphous materials and single crystals. The overall agreement between the simulated and experimental results is highly promising for future development and use in the interpretation and simulation of RBS spectra.
 
 

Electrostatic accelerator facilities and their applications at Peking University

<p indent="0mm">Electrostatic accelerators are powerful tools in many research fields, such as nuclear physics, materials science, and archaeology. Three electrostatic accelerators, the 1.7 MV tandem, the single stage Van de Graaff with a terminal voltage of 4.5 MV, and the EN tandem with a terminal voltage of 6 MV, were installed in 1980s and have been put into operation since the early 1990s at Peking University. The 1.7 MV tandem accelerator is equipped with a radio frequency charge exchange negative ion source and a cesium sputtering negative ion source, which can produce most of the ions from H to Au. It accelerates the ions to energies from several hundreds of keV to several MeV. The accelerator is used for ion irradiation, ion beam modification of materials, as well as ion beam analysis (IBA), such as Rutherford backscattering spectroscopy (RBS) and channeling. Many significant achievements have been made by using the ion irradiation beamline, especially in the research of nuclear materials. The superlattice steel containing a high density of B2-ordered Ni(Al, Fe) superlattice nanoprecipitates (NPs) was irradiated with <sc>6 MeV</sc> Au ions at different high temperatures. The superlattice steel exhibits extraordinary radiation tolerance, namely, zero void swelling at 400–600°C under an average radiation damage of up to <sc>2350 dpa,</sc> outperforming most of the other steels studied to date. This paper demonstrates a counterintuitive strategy to enhance the radiation resistance of metallic materials by simply ordered superlattice NPs. For the 4.5 MV electrostatic accelerator, the isotope ions of hydrogen or helium can be produced in the energy range of <sc>0.7–3.8 MeV,</sc> and continuous or pulsed quasi-monoenergetic neutron fields <sc>(0.03–7 MeV,</sc> <sc>14–19 MeV)</sc> can be generated by ion beam bombarding targets. The neutron fields have applied it to measure (n, α) reaction cross section. Based on the 4.5 MV electrostatic accelerator, a total-IBA system has been established. Total-IBA can obtain self-consistency results through analyzing spectra of different emission particles, without massive modification of equipment. RBS-nuclear reaction analysis (NRA)-particle-induced X-ray emission analysis (PIXE) integrated IBA experiment was carried out to study a Fe-based alloy. The incident particle is ³He⁺ under <sc>3.0 MeV.</sc> The integrated charge is obtained by fitting the RBS spectrum. The content and depth distribution of C element can be determined by analyzing the NRA spectrum. The signal of O element can also be observed in the NRA spectrum, and its depth distribution can be obtained by fitting RBS. More than ten trace elements are analyzed by PIXE, and P has the lowest content, which is <sc>158.2 ppm.</sc> The 6 MV EN tandem accelerator, which has supported much basic and application research at Peking University, was transferred from Oxford University, UK. It is suitable for accelerator mass spectrometry (AMS), ion irradiation and ion beam analysis. The accelerator can also be applied for detector calibration. CR-39 nuclear track detectors were irradiated by <sc>3–8 MeV</sc> mono-energetic protons and <sc>6–30 MeV</sc> mono-energetic carbon ions, which were produced by the 6 MV tandem accelerator. The relationships between particle energy and orbital diameter in CR-39 detectors are established. These data on CR-39 detectors will be useful for identifying reaction products in laser-plasma experiments with complex conditions. With the technique development such as modern ion beam analysis technology and multi-beam to one target, more attractive applications are expected.

What do artificial neural networks learn? A study for analysis of RBS spectra

The massive analysis of Rutherford Backscattering Spectrometry (RBS) data is complex. When the data is processed manually, it requires a long time of an experienced person. Artificial Neural Networks (ANN) can analyze, speed up, and automate data processing. In fact, after training, the ANN processes one RBS spectrum in a fraction of a second with the advantage of keeping the consistency over the whole set of spectra. Our group used ANN to process a large set of RBS spectra from the inner walls of the vacuum chamber of the W7-X fusion reactor. In this work, we used a perturbation-based method to study the local explanations of the neural network predictions. In this method, we apply small perturbations to the inputs. Then, the outputs’ variations are evaluated. Thereby activation maps were created to visualize how sensitive the ANN is to perturbations. The activation maps enable the identification of the parts of the spectrum the neural network is getting information to make predictions. Therefore, we can better understand the behavior of the machine learning model and verify if the neural network learned the features of the spectra similarly to humans.

The structural and optical response of the Au nanoparticles embedded in YSZ modified using high-energetic ion irradiation

Gold nanoparticles (Au NPs) were synthesized in single-crystalline yttria-stabilized zirconia (YSZ) using a high-energetic gold ion implantation with the intention of subsequent modification by silicon ion irradiation. (100)-oriented YSZ samples were implanted with 1 MeV Au+ ions at room temperature and fluences of 1.5×1016 cm−2, 5.0×1016 cm−2 and 7.5×1016 cm−2 and subsequently annealed for 1 h at 1100 °C in air. Gold NPs modification was realized with irradiation by 10 MeV Si3+ with the fluence of 5.0×1014 cm−2. Au NPs distribution and subsequent YSZ structure modification were studied. YSZ samples as-implanted with Au ions, annealed and subsequently irradiated with Si ions were characterized using Rutherford backscattering spectrometry (RBS) and RBS in channelling mode (RBS-C). The RBS spectra show that the implanted Auions concentrate in the YSZ sub-surface layer in the depth of about 50-250 nm and shift to greater depth with increasing ion fluence. The Si3+ ions irradiation slightly increased Zr sub-lattice disorder. Optical absorbance shows an increase of absorption band at 550 nm after Au implantation only for the two highest ion fluences. After annealing and Si irradiation, optical absorbance increased at 530-580 nm with connection to ion implantation fluence of Au+ ions.

Defects engineering and enhancement in optical and structural properties of 2D-MoS2 thin films by high energy ion beam irradiation

Transition metal dichalcogenides (TMDs) like molybdenum disulfide (MoS2) have extra-ordinary physical and chemical peculiarities which can be additionally modified by ion beam irradiation. In the present work, we illustrate the tailoring of MoS2 thin films by employing ion beam irradiation. Silicon ion beam with 100 MeV energy was used to have an apparent impact on structural, morphological and optical properties of MoS2 thin films. Sputtered MoS2 films were irradiated with 100 MeV Si8+ ion beam with a fluence of 1E13 ions/cm2. The X-ray diffraction (XRD) technique validates the structural analysis of MoS2 films with hexagonal phase and reduction in the crystallinity is observed after irradiation owing to the generation of defects by high energy ion beam irradiation. MoS2 thin films display Raman modes at ⁓378 cm−1 and ⁓411 cm−1 corresponding to the one molybdenum atom and two sulfur atoms of the same layer vibrates in the converse in-plane and out-of-plane direction respectively. Intensity of Raman peaks is reduced after the employment of ion beam irradiation. Slight reduction in transmittance is observed after irradiation. The intensity of broad PL emission spectra observed at 360 nm showed the enhancement in PL intensity after ion beam irradiation. Rutherford backscattering spectroscopy (RBS) substantiated the presence of molybdenum (Mo) and sulfur (S) elements and 440 nm thickness of the samples. The investigation of the thickness and atomic fraction of the specimen was also governed by simulating the RBS spectrum using SIMNRA software. To demonstrate the changes occur in grain size and surface roughness parameters in ion irradiated and pristine MoS2 thin films were analyzed by AFM (atomic force microscopy). The alterations of binding energy of Mo 3d and S 2p region of MoS2 pristine and ion irradiated thin films were analyzed by X-ray photoelectron spectroscopy (XPS).

STRUCTURE, MORPHOLOGY AND MAGNETIC PROPERTIES OF ELECTRODEPOSITED NI FILMS

Ni thin films have been electrodeposited on [Formula: see text]-Si (100) substrates for different deposition times at a fixed potential of 2[Formula: see text]V. The as-elaborated films have been characterized by Rutherford backscattering spectroscopy (RBS), X-ray diffraction (XRD), atomic force microscopy (AFM) and vibrating sample magnetometry (VSM). From RBS spectra, we have extracted the Ni film thicknesses, [Formula: see text], which ranges from 105 nm to 710 nm. The analysis of XRD spectra shows the existence of a strong [Formula: see text]111[Formula: see text] texture for all film thicknesses. The strain values [Formula: see text] are negative for all Ni films indicating that they are under compressive stresses. The grains size, [Formula: see text], increases to reach a maximum for [Formula: see text][Formula: see text]nm then decreases again with increasing [Formula: see text][Formula: see text](nm). From AFM images, we have shown that the films become progressively smoother with increasing thickness. We have shown that the coercive field measured in parallel geometry, [Formula: see text], increases with increasing thickness.

A study of the formation of isotopically pure 28Si layers for quantum computers using conventional ion implantation

We have investigated the use of conventional ion implantation to fabricate enriched 28Si layers for use in quantum computers. The final compositions of samples enriched using ultra-low energy (ULE) (800 eV and 2 keV) and low energy (20 keV) 28Si implants of varying fluences (1 × 1016–3.8 × 1017 cm−2) using two different implanters were measured using channelled Rutherford Backscattering Spectroscopy (RBS). The dynamic, binary collision approximation program TRIDYN was used to model the implantation profiles to guide the analysis of the RBS spectra. It was found that ULE implants achieved high 28Si enrichment levels but were heavily contaminated with oxygen due to poor vacuum in the implanter wafer end station. It was shown that oxidation could be reduced by using an accelerator with an end station with better vacuum and increasing the implant energy to 20 keV. However, TRIDYN simulations predict that the best 28Si enrichment levels that could be achieved under these conditions would saturate at ∼99.2% due to self-sputtering. We modelled a range of conditions with TRIDYN and so recommend low energies (<3 keV), ultra-high vacuum implantation for high 28Si enrichment (>99.9%) with the lowest possible fluences (∼5–10 × 1017 cm−2).

Fabrication of thin [formula omitted]Ce target foils for study of nuclear reaction dynamics

We report fabrication of thin target foils of 140,142Ce by the physical vapour deposition technique. The targets are to be used in the study of nuclear reaction dynamics with heavy ion beams. Owing to the highly reactive nature of cerium, the thin films can be oxidized during fabrication. The films were sandwiched between thin layers of natC to impart structural stability and prevent degradation over long periods of time. The parameters for vapour deposition were frozen after several trials with natural cerium. To obtain surface morphology, elemental composition, chemical composition and thickness of the prepared targets, those were characterized using Scanning Electron Microscopy (SEM), Energy Dispersive X-ray Spectroscopy (EDS), Fourier Transform Infrared Spectroscopy (FTIR), X-ray Diffractometry (XRD) and Rutherford Back-scattering Spectroscopy (RBS). The thickness of the isotopic targets was in the range of 100–200 μg/cm2. XRD and RBS spectra were used to determine the stoichiometry of oxide present in the films. They were observed to be in the form of CeO2. The isotopic composition of one of the targets was determined in an in-beam experiment using a recoil mass spectrometer. Results from the experiment matched quite well with the data provided by the supplier of the isotopic material.

Effect of heat treatment on the migration behaviour of selenium implanted into polycrystalline SiC

This study reviews the migration behaviour of selenium in polycrystalline SiC, which acts as the main diffusion barrier in the coated fuel particles for Very High Temperature Reactors. Se ions of 200 keV were implanted into polycrystalline SiC wafers to a fluence of 1 × 1016 cm−2 at three temperatures, which were room temperature, 350 °C and 600 °C. The implanted samples were annealed at temperatures ranging from 1000 to 1500 °C in steps of 100 °C for 10 h. The migration of implanted Se was monitored by Rutherford backscattering spectrometry (RBS) while structural and morphological changes were monitored by Raman spectroscopy and scanning electron microscopy (SEM). Implantation of Se at room temperature amorphized the near surface region of the SiC substrates, while in samples implanted above the critical amorphization temperature the crystal structure was retained with some radiation damage. Annealing at 1000 °C resulted in the recrystallization of the amorphized SiC layer. In the case of room temperature implantation, the broadening of the implanted Se profile in RBS spectra was observed to occur after annealing at 1300 °C and became significant with an increase in annealing temperature. This broadening was accompanied by a peak shift towards the surface and loss of implanted Se. No broadening was observed in samples implanted above the critical amorphization temperature, but the peak shift towards the surface began after annealing at 1300 °C in samples implanted at 350 °C and 600 °C.

Exposure of Indian RAFM under variation of He+ flux and target temperature in the CIMPLE-PSI linear device

The paper reports first investigations of the effect of low-temperature helium (He) plasma exposure on the India specific reduced activation ferritic martensitic (IN-RAFM) steel. Experiments are performed in the CIMPLE-PSI device, over the variation of ion-flux (∼3 × 1022−23 m−2s−1) and target temperature (316 K−830 K), for ion-fluence up to 1.6 × 1026 m−2. Strong morphology changes have been observed, in particular, fiber-form surface structures with nanometer-sized grain structures, pinholes, and hollow fibers. Surface enrichment of tungsten up to 2.3 at.% was measured by energy dispersive x-ray spectroscopy (EDX), which was supported by Rutherford backscattering spectrometry (RBS) measurements. This had happened because iron and chromium were preferentially sputtered out by the He ions. It is demonstrated that the porous, micrometer-sized surface inhomogeneities, produced under high ion-flux (≥8.0 × 1022 m−2s−1) and high target temperature (≥518 K), critically influence the shape of the RBS spectrum, which necessitates a revision of the data analysis procedure. Through optical emission spectroscopic observations, we demonstrate that the sputtering yield of the steel decreases with exposure time, primarily because of the formation of the porous surface microstructures and also due to the surface enrichment of the exposed samples with tungsten atoms. It is concluded that the formation of bubbles underneath the surface of RAFM, and their subsequent distortion and rupturing leads to the formation of fiber-form structures under the relatively high target temperature, high ion-flux irradiation conditions.

Structural investigation of gadolinia-ceria multilayered thin films deposited by reactive magnetron sputtering

The gadolinia-ceria multilayer sandwich systems (4–12 layers) were deposited on Si (1 1 1) substrate by direct current reactive magnetron sputtering in O2/Ar gas mixture. Gadolinia-ceria thin films were annealed at 700 °C for 1 h in air. The structure and morphology of annealed films were investigated using X-ray diffraction (XRD), Raman spectroscopy, and scanning electron microscopy (SEM). The annealing of the films improved the density and resulted in the diminishing of the boundary between the individual layers. Phase composition results revealed the presence of a cubic fluorite crystal structure. SEM measurements indicated that the thickness of films varied in the range of ~550–850 nm. The inter-diffusion of Ce and Gd in multilayered gadolinia-ceria systems was analyzed by Rutherford Backscattering spectroscopy (RBS). RBS spectra of the films indicated that the thickness of the sputtered multilayer system affects the inter-diffusion process.

Evaluation of diffusion parameters and phase formation between tungsten films and glassy carbon

Thin films of tungsten (W) were deposited on glassy carbon (C) substrates using a magnetron sputtering system. The as-deposited samples were annealed isothermally under vacuum at temperatures ranging from 673 to 1273 K. The structural changes due to thermal annealing were monitored by Rutherford backscattering spectrometry (RBS) and grazing incidence X-ray diffraction (GIXRD). RUMP software was used to simulate the RBS spectra. The thickness of W thin films deposited, atomic composition of deposited layer and the intermixed layer growth were deduced from the RUMP simulation results. The GIXRD analysis showed that carbide formation was first observed at annealing temperature of 1173 K. The kinetics of the solid-state interaction was found to be diffusion controlled at the interface between W and C. The activation energy for the diffusion of C in W was estimated as 2.23 eV. The XRD results showed that the average crystallite size of the as-deposited W film was 9.77 nm. It increased with annealing temperature up to 18.05 nm at 1173 K. The first carbide phase observed was W2C in the sample annealed at 1173 K, while WC was the dominant carbide phase at 1273 K. The stability of W/C system under heat treatments below 1073 K suggests that this system has a promising application for long-term structural integrity of dry cask storage devices.

Change in Li depth profiles of Au/LCO/mixed LATP-LAGP/Pt battery under discharging studied by ion beam analysis techniques with 9 MeV O4+ ions

Li depth profiles in Au/LCO/mixed LATP-LAGP/Pt battery (mixed LATP-LAGP (LATP/LAGP) = Li1+X+YAlYTi2−YGeXP3−XO12, LCO = LiCoO2) under discharging by biasing Pt to Au at earth potential, have been measured from both Au and Pt surfaces by means of reflection elastic recoil detection (ERD) and Rutherford backscattering spectrometry (RBS) techniques with 9 MeV O4+ ions. Ge and Ti compositions of a mixed LATP-LAGP electrolyte and thickness of LCO were determined from RBS spectrum for the as-prepared specimen, where Y and X in LATP were estimated to be 0.84 and 1.27, respectively. On charging at 2.4 V for 25 min, Li composition in LCO measured from the Au surface by ERD was reduced down to ~0.3 and hereafter on discharging at 0.5 V for 25 min the composition was not enriched, but contrary was further reduced to 0.2. However, by successive discharging at 1.0, 1.5 and 2.2 V for 50 min the composition was enriched. On the other hand, it was found from the Pt surface that Li charged in the electrolyte near Pt by biasing at 2.4 V for 20 min was reduced by discharging at 1.0 V for 20 min. By further discharging for 20 min Li was not reduced, but contrary was enriched. Both anomalous transports of Li under discharging are discussed in terms of diffusion of Li atoms in the counter direction to the biasing which is caused by the transport fraction of Li ions in the electrolyte less than unity.

Monte Carlo simulations of ion channeling in crystals containing dislocations and randomly displaced atoms

Monte Carlo (MC) simulations are a powerful tool for the analysis of ion-solid interactions. The MC code McChasy (Monte Carlo CHAnneling SYmulation) allows the evaluation of Rutherford Backscattering Spectrometry spectra in the Channeling mode to quantify implantation damage. The code works on common personal computers and takes into account randomly displaced atoms as well as certain types of extended defects. In this paper, we report recent improvements of the McChasy code, including a unique approach to the calculation of impact parameters between ions and target atoms in three dimensions (along with computing thermal vibrations also in three dimensions). Furthermore, the use of a rotation matrix to provide different orientations of dislocation lines and an updated model of edge dislocations were also implemented in the code. Dislocation parameters are obtained directly from high-resolution Transmission Electron Microscopy micrographs. Two case studies are presented to highlight the importance of these improvements: Ni-implanted Al was analyzed as an example of a crystal mainly containing dislocations; Er-implanted ZnO was studied, revealing the strength of MC analysis for materials containing a mixture of different defect types, namely, randomly displaced atoms and dislocations.

Stopping power and energy loss straggling data of Bismuth thin film for (0.9–3.0) MeV 4He+ swift ions

Stopping power and energy loss straggling data of 4He+ swift ions in Bismuth thin film (Bi/Si) deposited onto silicon substrate were measured via Rutherford backscattering spectrometry (RBS) at incident energies ranging from 0.9 to 3.0 MeV. We adopted an improved experimental method based on the Kr+ ion implantation of the target Si substrate at low 40 keV energy and using the generated Kr-peak in the backscattered RBS spectra as reference to extract both the energy loss and the energy loss straggling for He+ ions crossing the Bi thin film. The obtained experimental stopping power values were found in good agreement with those generated numerically via SRIM-2013 and CasP 5.2 computer codes. They are also showed to be consistent with previously reported stopping data within the He+ ion energy region mainly below 1.5 MeV, which are thus extended them to higher incident energies. Finally, the relevance of collisional straggling values predicted by Bohr’s and Bethe-Livingston’s theories for describing the determined experimental straggling data was discussed by invoking two main additional contribution effects due to target thickness inhomogeneity and ion charge exchanges included in the Yang semi-empirical formula.

Highly ordered metal-coated alumina membranes: Synthesis and RBS characterization

Highly ordered metal porous membranes containing Fe and Zr in different layers have been fabricated by successive ion-beam sputtering depositions of these metals onto a porous anodic aluminum oxide (AAO) membrane. Two different membrane configurations were studied: Zr/Fe/AAO and Fe/Zr/AAO. Morphology and composition of these multi-membranes have been characterized by Field Emission Scanning Electron Microscopy (FESEM), Atomic Force Microscopy (AFM), X-ray diffraction (XRD) and Rutherford Backscattering Spectrometry (RBS). The RBS analysis allowed a precise quantification of the atomic composition of the metal membrane and the support layer. The asymmetry and long tails observed for the metallic peaks in the RBS spectra indicate the different filling of the pores during the deposition. These results provide a possible structural configuration for the metal membranes, where Fe/Zr/AAO and Zr/Fe/AAO membranes follow different behaviors.

High-energy 120 MeV Au9+ ion beam-induced modifications and evaluation of craters in surface morphology of SnO2 and TiO2 nanocomposite thin films

The electronic excitation and modification in the properties of the target material occur due to the kinetic energy loss of incident ions mainly through the inelastic collision with atomic electrons in the process of electronic energy stopping. Nanocomposite tin oxide (SnO2) and titanium dioxide (TiO2) thin film were grown on silicon and ITO substrates using RF magnetron-sputtering process. These thin films were irradiated by 120 MeV Au9+ Swift Heavy Ion (SHI) beam with varying fluence from 5 × 1011 ions cm−2 to 2 × 1013 ions cm−2 to induce modifications in thin films by dense electronic excitation. Surface morphology and depth profile of craters (approx. 85 nm) have been characterized by multimode atomic force microscopy (AFM). Grain mapping of AFM images provided the variation in grain size in the range of 72–279 nm and RMS roughness increased (4.01–23.6 nm) with increasing the ion fluence. Scanning Electron Microscopy (SEM) was also carried out to confirm the formation of craters in the irradiated film. X-ray diffraction (XRD) technique has been used for the structural analysis of virgin and irradiated thin films. XRD patterns established the formation of film in mixed (rutile and gamma) phase. Further, the crystallite size was evaluated using the Debye–Scherrer and Williamson–Hall method. It was found that crystallite size lie in the range of 36–54 nm which increased for the lower fluence and then decreased for higher fluence. The ion irradiation-induced strain has been explained by Thermal spike and Coulomb explosion model. UV–Vis study showed that the optical band gap reduced from 3.87 to 3.72 eV with increasing the ion fluence which can be ascribed to the formation of intermediate states and free radicals between the valance and band conduction band. Rutherford Backscattering Spectrometry (RBS) ensured that the film thickness decreased from 210 to 183 nm with increasing the ion fluence. The simulation of the RBS spectra provides the elemental composition of Sn (0.37), Ti (0.65) and O (0.85) in SnO2 and TiO2 nanocomposite thin films.

Dense electronic excitation induced modifications in nanocrystalline zirconium oxide thin films: Detailed analysis of optical and surface topographical

Ion irradiation is known to create structural disorder and crystallization improvement in the material. In the present study, focus is on the effect of high energy ion beam irradiation on the optical, surface morphological and structural properties of ZrO2 thin films of 200 nm grown on Si and glass substrate by RF sputtering technique. The prepared thin films were annealed at 600 °C and irradiated with swift heavy ions (SHI) of 120 MeV Ti9+ ion beam with varied fluences ranging from 5E11 to 2E13 ions/cm2. SRIM simulation reveals that the electronic energy losses (Se) dominate over the nuclear energy losses (Sn) and the projected range of the Ti ions was found to be 13.64 μm. Optical properties were studied by using UV-Vis and Photoluminescence (PL) spectroscopy. The transmittance of the ZrO2 samples lies in the range of (46–79%) and the Tauc's plot was used to calculate the optical band gap. PL spectroscopy demonstrates the emission spectrum using the excitation wavelength of 310 nm. The influence of SHI irradiation on the surface morphology of ZrO2 thin films was examined by Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscopy (FESEM). The sectional analysis of AFM images reveals that the grain size decreases with increasing the ion fluences and lies in the range of 51-29 nm. The structural analysis of pristine and irradiated samples was done by using X-ray diffraction (XRD) technique. The crystallite size increases for the lower fluence up to 1E12 ions/cm2 and decreases at higher fluence due to the development of fragmentation by the effect of SHI irradiation. XRD patterns were used to calculate strain, stress, dislocation density and texture coefficient of the ZrO2 samples. Rutherford Backscattering Spectrometry (RBS) ensures the presence of Zr and O elements with the atomic fraction of 1: 2 and thickness (200 nm) of the samples was confirmed by simulating the RBS spectrum. The modifications induced in the properties of the ZrO2 thin films were mainly due to the electronic energy losses through the inelastic collision in the target material.

Atmospheric aerosol analysis at the PIXE–RBS beamline in the University of Jordan Van de Graaff accelerator (JUVAC)

The University of Jordan Van de Graaff accelerator (JUVAC) was devoted many years ago to promote scientific research through the installation of several beamlines based on nuclear techniques. It constitutes the first and unique, till now, ion beam analysis facility in Jordan. Among these techniques, the JUVAC has recently installed, with the financial and technical aid of the International Atomic Energy Agency, a combination of particle‐induced X‐ray emission (PIXE) and Rutherford backscattering spectrometry (RBS). A new X‐ray detector has been installed, and the system has been tested for aerosol analysis using a set of thin MicroMatter standards. This manuscript includes a brief description of the combined PIXE–RBS beamline with some results, particularly those obtained by PIXE. The low‐energy proton beam adds a technical limitation to attain optimum analytical performance. However, a simulation of the RBS spectrum of protons on aerosol filter indicates that the RBS measurement for some elements (e.g., Pb) can replace the PIXE one.