Rutherford Backscattering Spectrometry Data Research Articles

A machine learning approach to self-consistent RBS data analysis and combined uncertainty evaluation

We introduce a machine learning approach designed for the self-consistent analysis of data acquired through simultaneous Rutherford backscattering spectrometry (RBS) in multiple scattering geometries, with subsequent determination of the analysis uncertainty. Using a simulated data set, the successful self-consistent evaluation of up to six simultaneous RBS data collections was achieved by employing artificial neural networks (ANN). The results demonstrate enhanced accuracy and precision when concatenating multiple RBS spectra as input to the ANN. The precision was quantified through the combined uncertainty, encompassing the ANN random uncertainty, the ANN systematic uncertainty, and the model robustness. While applied to only RBS analysis, this approach holds promise for advancing the analysis of data collected by next-generation RBS equipment and Total ion beam analysis, offering a robust and efficient framework for future research.

Characterization of agricultural biomass by particle induced x-ray emission and Rutherford backscattering techniques

Particle-induced x-ray emission (PIXE) and Rutherford backscattering spectrometry (RBS) techniques are non-destructive elemental analyses method with high sensitivity and capability for multi-element analysis in one spectrum. These techniques have not been used for the elemental characterization of biomass. So, this study characterized and evaluated elemental compositions of some selected agricultural biomass (Palm kernel shell (PKS), coconut shell (CS), cassava peel (CP), and Africa star apple seed shell (ASASS)) using combined PIXE and RBS. The results were compared with the ultimate analysis and optical-based techniques. Results from PIXE and RBS analysis confirm the presence of C, O, S, Na, Mg, P, Si, K, Ca, Fe, Cl, Al, Ti, Cu, and Zn in the tested biomass samples. Estimation of RBS accuracy by direct comparison with the ultimate analysis of some biomass samples showed a wide disparity of ±10.7% and ±2.57% in the RBS data for carbon and oxygen in PKS and a disparity of ±5.22% and ±0.55% in the RBS data for carbon and oxygen in coconut shell respectively. In the case of minor and trace element concentrations, estimated errors in the range of 1–3% and 2.68–4% were observed for optically based techniques compared with PIXE and RBS analysis, respectively.

Determining the chronological sequence of inks deposited with different writing and printing tools using ion beam analysis.

Determining the sequence of inks in a questioned document is important in forensic science. Conventional and micro beam-based ion beam analysis using Rutherford backscattering spectrometry (RBS) and particle-induced X-ray emission were employed to study the depth distribution of chemical elements in plain paper and inks/toner deposited by different pens as well as inkjet and laser printers. Composition depth profiling with high lateral resolution was performed with focus on areas where two different coloring agents overlapped. We identify under which conditions the sequence of inks deposited can be reconstructed, analyzing the continuity of characteristic contributions to the obtained signals, with a focus on the depth-resolved RBS data. The order of deposition was correctly determined for combinations of two different laser printers and in certain cases for pens. Results indicate a potential for analysis, depending on the composition of staining agent, that is, in particular if heavy species are present in sufficiently high concentration. In such cases, also characters obscured or modified by an agent of different composition can be revealed. Changing the probing depth by modifying the beam energy could yield additional information.

Processing of massive Rutherford Back-scattering Spectrometry data by artificial neural networks

Rutherford Backscattering Spectrometry (RBS) is an important technique providing elemental information of the near surface region of samples with high accuracy and robustness. However, this technique lacks throughput by the limited rate of data processing and is hardly routinely applied in research with a massive number of samples (i.e. hundreds or even thousands of samples). The situation is even worse for complex samples. If roughness or porosity is present in those samples the simulation of such structures is computationally demanding. Fortunately, Artificial Neural Networks (ANN) show to be a great ally for massive data processing of ion beam data. In this paper, we report the performance comparison of ANN against human evaluation and an automatic fit routine running on batch mode. 500 spectra of marker layers from the stellarator W7-X were used as study case. The results showed ANN as more accurate than humans and more efficient than automatic fits.

A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques

In this work, we used a combination of photoluminescence (PL), high resolution X-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) techniques to investigate material quality and structural properties of MBE-grown InGaAsBi samples (with and without an InGaAs cap layer) with targeted bismuth composition in the 3%–4% range. XRD data showed that the InGaAsBi layers are more homogeneous in the uncapped samples. For the capped samples, the growth of the InGaAs capped layer at higher temperature affects the quality of the InGaAsBi layer and bismuth distribution in the growth direction. Low-temperature PL exhibited multiple emission peaks; the peak energies, widths, and relative intensities were used for comparative analysis of the data in line with the XRD and RBS results. RBS data at a random orientation together with channeled measurements allowed both an estimation of the bismuth composition and analysis of the structural properties. The RBS channeling showed evidence of higher strain due to possible antisite defects in the capped samples grown at a higher temperature. It is also suggested that the growth of the capped layer at high temperature causes deterioration of the bismuth-layer quality. The RBS analysis demonstrated evidence of a reduction of homogeneity of uncapped InGaAsBi layers with increasing bismuth concentration. The uncapped higher bismuth concentration sample showed less defined channeling dips suggesting poorer crystal quality and clustering of bismuth on the sample surface.

Characterization of a SiC MIS Schottky diode as RBS particle detector

A 4H-SiC Schottky diode was investigated as a particle detector for Rutherford Backscattering Spectroscopy (RBS) experiment. The device was fabricated on a commercial 4H-SiC epitaxial n-type layer grown onto a 4H-SiC n+ type substrate wafer doped with nitrogen. Hafnium oxide with thickness of 1 nm was deposited by Atomic Layer Deposition and 10 nm of Ni were deposited by sputtering to form the Ni/HfO2/4H-SiC MIS Schottky structure. Current-Voltage curves with variable temperature were measured to extract the real Schottky Barrier Height (0.32 V) and ideality factor values (1.15). Reverse current and Capacitance-Voltage measurements were performed on the 4H-SiC detector and compared to a commercial Si barrier detector acquired from ORTEC. RBS data for four alpha energies (1, 1.5, 2 and 2.5 MeV) were collected from an Au/Si sample using the fabricated SiC and the commercial Si detectors simultaneously. The energy resolution for the fabricated detector was estimated to be between 75 and 80 keV.

Ni/Al2O3/4H-SiC structure for He++ energy detection in RBS experiments

Epitaxial SiC device have been tested as detector for Rutherford Backscattering Spectroscopy (RBS). The device was fabricated on a commercial 4H-SiC epitaxial n-type layer grown onto a 4H-SiC n+ type substrate wafer doped with nitrogen. Aluminum oxide with a thickness of 1 nm was deposited by Atomic Layer Deposition and 10 nm of Ni were deposited by sputtering to form the Ni/Al2O3/SiC MIS Schottky structure. Variable temperature Current-Voltage curves were used to extract the values of real Schottky Barrier Height and ideality factor (0.61 eV and 1.19, respectively). Current-Voltage and Capacitance-Voltage characteristics were measured and compared with the curves of a commercial Si barrier detector from ORTEC. RBS data for three beam energies (1, 1.5 and 2 MeV) were collected from an Au/Si sample using the fabricated and the commercial detectors simultaneously. The energy resolution for the fabricated detector was estimated to be 76 keV.

Influence of deposition atmosphere and substrate temperature on the structure, morphology, and photoluminescence of pulsed laser deposited La0.5Gd1.5SiO5:Dy3+

Dysprosium doped mixed lanthanum gadolinium oxyorthosilicate (La0.5Gd1.5SiO5:Dy3+) thin films were laser ablated on Si (111) substrates. The films were deposited in different atmospheres [vacuum, argon, and oxygen (O2)] and also at different deposition temperatures (50, 200, 300, 400, and 500 °C) in O2. The x-ray diffraction patterns preferentially showed two peaks, one from Gd2SiO5 and one from La2SiO5. The surface topography and particle morphology of the films were studied using atomic force microscopy and field emission scanning electron microscope. The Rutherford backscattering spectroscopy (RBS) spectra and the energy dispersive x-ray spectroscopy spectra confirmed the presence of O, Si, La, Gd, and Dy in the films. The thickness of the films determined from the RBS data were in the micrometer range and changes with the substrate temperature and deposition atmosphere. The electronic states of the films were analyzed using x-ray photoelectron spectroscopy. The photoluminescence (PL) excitation showed a prominent peak around 226 nm from which the emission spectra were measured. The emission spectra showed two prominent peaks at 488 and 578 nm due to f–f electronic transition of Dy3+. The highest PL intensity was obtained from the film deposited in O2 at the substrate temperature of 200 °C.

The influence of laser wavelength on the structure, morphology, and photoluminescence properties of pulsed laser deposited CaS: Eu2+ thin films

Europium-doped calcium sulfide thin films were grown on Si (100) substrates using the pulsed laser deposition technique. The influence of the laser wavelength on the structure, morphology, and photoluminescent properties of the films was studied. The X-ray diffraction data showed that the films were amorphous, except for the (200) diffraction peak observed from the films deposited at the wavelengths of 266 and 355 nm. The atomic force microscopy and Rutherford backscattering spectroscopy data showed that the film deposited at 355 nm was rougher and thicker than those deposited at 266 and 532 nm. As a result, the highest photoluminescence emission intensity around 650 nm was observed from the film deposited at 355 nm. This emission was attributed to the 4f65d1 → 4f7Eu2+ transitions of Eu2+ observed. These films were evaluated for blue light-emitting diodes.

In-depth elemental characterization of Cu(In,Ga)Se2 thin film solar cells by means of RBS and PIXE techniques

Thin films based on Cu(In,Ga)Se2 are used as absorber cells in photovoltaic devices. In and Ga graded depth profiles are designed to optimize the solar cell performance. Simultaneous Rutherford Backscattering Spectrometry (RBS) and Particle Induced X-ray Emission (PIXE) with 3MeV 4He ions were used in conjunction to determine the depth profile of all the heavy elements in Cu(In,Ga)Se2 absorbers and complete solar cells. The RBS and PIXE data from one sample were analyzed synergistically, providing reliable depth profiles that satisfy all the data collected. An uncertainty analysis was done, probing the sensitivity of the analysis to different assumptions. The analytical possibilities of the combined RBS/PIXE alpha beam measurements of the CIGSe thin film solar cells, as well as the uncertainties induced in the quantitative methodology are discussed and critically assessed.

Ion Beam Microscopy: a Tool for Materials

Ion Beam Analytical techniques (IBA) using MeV charged particles are powerful techniques for the study of different type of samples in several science fields such as Material Science, microelectronics or biology/biomedicine due to its fine sensitivity, versatility and “non-destructive” characteristics. The possibility of beam focusing and beam scanning adds spatial resolution down to the dm level and imaging capabilities then allowing the IBA techniques to become microscopy techniques.In the Nuclear Microprobe installed at IST/ITN several IBA techniques can be routinely used for materials characterization, the most common ones being PIXE (Particle Induced X-ray Emission), RBS (Rutherford Backscattering Spectrometry) and STIM (Scanning Transmission Ion Microscopy). Whether through their independent or combined use the most important thing of these techniques is the complementary information that they can grant. As any other X-ray spectroscopic technique pPIXE can also provide elemental identification (for Z>12) but further present their spatial distribution in the sample as well as, for thin biological samples (<20 <m), calculate their areal mass density. RBS on the other hand is able to probe sample in depth then allowing obtaining, for instance, elemental depth profile and at the same time sample matrix areal mass density. The combined use of PIXE and RBS then allows determining elemental concentration for thin biological samples. For the mentioned thin biological samples the ion beam energy loss when crossing them (base of the STIM technique), contains information on their density or thickness allowing unique information on its structure and morphology.Advantages and draw backs can always be taken into account when comparing with similar or competitive techniques. This is the case of PIXE and SEM-EDS which is quite unfavorable for PIXE in the case of image spatial resolution, but quite favorable if elemental sensitivity is considered. Due to the much lower X-ray spectrum background, detection limits for PIXE reach the tg/g level.As an example of application, some of the results obtained for PE-g-HEMA films are here shown. To allow their utilization as biomaterials for biomedical applications (e.g. drug delivery) apart from the needed mechanical properties and surface characteristics, biocompatibility of these materials is of fundamental importance. Regarding biocompatibility one important parameter to be assessed is its cytotoxicity that strongly depends on the contamination level at the surface. As shown in Fig. 1, MeV ion beam microscopy not only can provide major and trace element spatial distribution (combining PIXE and RBS data) but also valuable information on its near-surface structure (STIM). Furthermore, quantitative elemental analysis can be performed through the analysis of the PIXE spectra with sensitivity down to the rg/g level as also revealed in Figure 1.V. Corregidor acknowledges the funding support from the FCT-Ciência program.

Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry

Strontium titanate (SrTiO3, STO) films were deposited by plasma-assisted ALD using cyclopentadienyl-based Sr- and Ti-precursors with O2 plasma as the oxidizing agent. Spectroscopic ellipsometry (SE) was employed to determine the thickness and the optical properties of the layers. As determined from Rutherford backscattering spectrometry (RBS), [Sr]/([Sr]+[Ti]) ratios ranging from 0.42 to 0.68 were achieved for 30–40 nm thick films by tuning the [SrO]/[TiO2] ALD cycle ratio. Films deposited at 250°C were amorphous and required post-deposition annealing to crystallize into the ultrahigh-k perovskite structure. The crystallinity of the films after rapid thermal annealing strongly depended on the film composition as observed by X-ray diffraction measurements. Using RBS data for a set of as-deposited samples, an optical constant library was built to determine the film stoichiometry from SE directly for the amorphous as-deposited films. After rapid thermal annealing the crystalline phase could be determined from the position of critical points of the measured dielectric function and the estimation of the stoichiometry was also possible for crystallized layers. These results open up a new way to use SE as a real-time characterization method to monitor and tune the STO film composition and crystallinity.

Accurate Determination of Quantity of Material in Thin Films by Rutherford Backscattering Spectrometry

Ion beam analysis (IBA) is a cluster of techniques including Rutherford and non-Rutherford backscattering spectrometry and particle-induced X-ray emission (PIXE). Recently, the ability to treat multiple IBA techniques (including PIXE) self-consistently has been demonstrated. The utility of IBA for accurately depth profiling thin films is critically reviewed. As an important example of IBA, three laboratories have independently measured a silicon sample implanted with a fluence of nominally 5 × 10(15) As/cm(2) at an unprecedented absolute accuracy. Using 1.5 MeV (4)He(+) Rutherford backscattering spectrometry (RBS), each lab has demonstrated a combined standard uncertainty around 1% (coverage factor k = 1) traceable to an Sb-implanted certified reference material through the silicon electronic stopping power. The uncertainty budget shows that this accuracy is dominated by the knowledge of the electronic stopping, but that special care must also be taken to accurately determine the electronic gain of the detection system and other parameters. This RBS method is quite general and can be used routinely to accurately validate ion implanter charge collection systems, to certify SIMS standards, and for other applications. The generality of application of such methods in IBA is emphasized: if RBS and PIXE data are analysed self-consistently then the resulting depth profile inherits the accuracy and depth resolution of RBS and the sensitivity and elemental discrimination of PIXE.

Solid-state field-assisted silver diffusion in (TeO2)0.6(WO3)0.25(La2O3)0.05(Na2O)0.1 glass

Silver-doped layers have been produced in (TeO2)0.6(WO3)0.25(La2O3)0.05(Na2O)0.1 (TWLN) glass by solid-state field-assisted diffusion. The silver concentration profile in the glass has been determined by secondary ion mass spectrometry (SIMS) and Rutherford backscattering spectrometry (RBS). The Matano-Boltzmann method applied to thermally activated diffusion indicates that the silver diffusion coefficient in the glass is a weak function of silver concentration. We carried out modeling of silver concentration profiles in the doped layer of the TWLN glass after solid-state field-assisted diffusion. Good agreement of the theoretical fit and experimental data suggests that the model chosen can be used to describe solid-state field-assisted diffusion of silver ions in TWLN glasses. Using RBS data, we have quantitatively estimated the surface density of silver atoms after field-assisted diffusion. Combining SIMS and RBS, we were able to assess the absolute silver concentration depth profile. Our results demonstrate that field-assisted diffusion, a simple and effective procedure for doping optical glasses, can be used to produce planar waveguide structures based on the tellurite glass studied here.

Temperature-driven local rearrangement in the Er environment of Er-doped silica glass films prepared by rf-cosputtering deposition

In this paper, an experimental study is presented on Er:SiO2 films prepared by an rf-cosputtering deposition technique, and then annealed in the 100–1200°C range. Samples were characterized by spectrally resolved cathodoluminescence, UV–VIS photoluminescence and Rutherford Backscattering Spectrometry (RBS). Strong optical modifications with temperature were observed, connecting the peculiar features of the Er luminescence activity to those of the silica matrix, namely, the density of nonbridging oxygen hole centers, oxygen-deficient sites and OH groups. In general, a complex phenomenology was observed, involving major local rearrangements of the Er environment. RBS data allowed to evidence migration phenomena, resulting in a compositional change of the films, thus indicating the progressive modification of the system as well as the possible formation of Er nanoclusters for high temperatures.

Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Study by Spectroscopic Ellipsometry

Strontium titanate (SrTiO3, STO) films were deposited by plasma-assisted ALD using cyclopentadienyl-based Sr and Ti precursors with O2 plasma as the oxidizing agent. As determined from Rutherford backscattering spectroscopy (RBS), [Sr]/[Ti] ratios ranging from 0.73 to 2.13 were achieved for 30-40 nm thick films by tuning the [SrO]/[TiO2] ALD cycle ratio. Films deposited at 250 °C were amorphous and required post-deposition annealing to crystallize into the ultrahigh-k perovskite structure. The crystallization temperature strongly depended on the film composition as observed by X-ray diffraction (XRD) measurements after rapid thermal annealing (RTA). Using RBS and XRD data as a combined-cross reference, it was shown that the film stoichiometry and the crystallinity can be probed directly by spectroscopic ellipsometry (SE).

Two diffusion pathways in quartz: A combined UV-laser and RBS study

The diffusive behavior of argon in quartz was investigated with three analytical depth profiling methods: Rutherford Backscattering Spectroscopy (RBS), 213 nm laser ablation, and 193 nm (Excimer) laser ablation on the same set of experimental samples. The integration of multiple depth profiling methods, each with different spatial resolution and sensitivity, allows for the cross-checking of methods where data ranges coincide. The use of multiple methods also allows for exploration of diffusive phenomena over multiple length-scales. Samples included both natural clear rock crystal quartz and synthetic citrine quartz. Laser analysis of clear quartz was compromised by poor coupling with the laser, whereas the citrine quartz was more easily analyzed (particularly with 193 nm laser). Diffusivity measured by both RBS and 193 nm laser ablation in the outermost 0.3 μm region of citrine quartz are self-consistent and in agreement with previously published RBS data on other quartz samples (including the clear quartz measured by RBS in this study). Apparent solubilities (extrapolated surface concentrations) for citrine quartz are in good agreement between RBS, 213 nm, and 193 nm laser analyses. Deeper penetration of argon measured up to 100 μm depth with the 213 nm laser reveal contributions of a second, faster diffusive pathway, effective in transporting much lower concentrations of argon into the crystal interiors of both clear and citrine quartz. By assuming such deep diffusion is dominated by fast pathways and approximating them as a network of planar features, the net diffusive uptake can be modeled and quantified with the Whipple–LeClaire equation, yielding δD b values of 1.32 × 10 −14 to 9.1 × 10 −17 cm 3/s. While solubility values from the measured profiles confirm suggestions that quartz has a large capacity for argon uptake (making it a potentially important sink for argon in the crust), the slow rate of lattice diffusion may limit its capability to take up argon in shorter lived geologic environments and in experiments. In such shorter-lived systems, bulk argon diffusive uptake will be dominated by the fast pathway and the quartz lattice (including natural isolated defects that may also be storing argon) may never reach its equilibrium capacity.

Synchrotron radiation photoelectron spectroscopy and near-edge X-ray absorption fine structure study on oxidative etching of diamond-like carbon films by hyperthermal atomic oxygen

Surface structural changes of a hydrogenated diamond-like carbon (DLC) film exposed to a hyperthermal atomic oxygen beam were investigated by Rutherford backscattering spectroscopy (RBS), synchrotron radiation photoelectron spectroscopy (SR-PES), and near-edge X-ray absorption fine structure (NEXAFS). It was confirmed that the DLC surface was oxidized and etched by high-energy collisions of atomic oxygen. RBS and real-time mass-loss data showed a linear relationship between etching and atomic oxygen fluence. SR-PES data suggested that the oxide layer was restricted to the topmost surface of the DLC film. NEXAFS data were interpreted to mean that the sp 2 structure at the DLC surface was selectively etched by collisions with hyperthermal atomic oxygen, and an sp 3-rich region remained at the topmost DLC surface. The formation of an sp 3-rich layer at the DLC surface led to surface roughening and a reduced erosion yield relative to the pristine DLC surface.

Macroscopic and nanoscale electrical properties of pulsed laser deposited (100) epitaxial lead-free Na0.5Bi0.5TiO3 thin films

Epitaxial Na0.5Bi0.5TiO3 thin films presenting various thicknesses were grown by pulsed laser deposition on epitaxial (100) platinum bottom layers supported by (100)MgO single crystal substrates. X-ray diffraction data indicated that all Na0.5Bi0.5TiO3 layers are single-phased and that (100)-oriented Na0.5Bi0.5TiO3 (NBT) crystallites are extremely predominant. The thinner films (respectively 230 and 400 nm) display a quasiunique (100) orientation (close to 100%), whereas for the thickest film (610 nm), the proportion of (100)-oriented Na0.5Bi0.5TiO3 crystallites decreases to 85.50 vol %. Such variation is supposed to result from the degree of misorientation of the Pt layer. Further x-ray investigations revealed a pronounced asymmetry of the (100)NBT reflection. Such asymmetry is also observed in the (310)NBT reciprocal space maps. The analysis of the asymmetrical broadening of the reciprocal lattice point suggests a variation in the chemical composition across the samples thickness, in agreement with comparative Rutherford backscattering spectroscopy (RBS) data. In addition, x-ray diffraction φ-scans data indicate the systematic epitaxial growth of the (100)-oriented crystallites. The observation of the microstructure of Na0.5Bi0.5TiO3 films completely corroborates the x-ray diffraction information. Whereas the two thinnest films are characterized by the presence of only one type of grains: i.e., very fine and spherical grains (around 50–100 nm in size), the thickest film is characterized by the presence of two types of grains: the aforementioned one and some elongated and “factory roof”-like grains. Thus, we unambiguously attribute that the spherical grains correspond to (100)-oriented crystallites, whereas the “factory roof”-like grains are (110)-oriented. The room temperature macroscopic ferroelectric properties were measured only for the thickest film. A rather well-defined shape of the polarization-electric (P-E) field hysteresis loops was recorded, and a vertical drift of the loops was systematically observed. Recentering the hysteresis loops leads to a Pr value of 12.6 μC/cm2, associated to a coercive field of about 94 kV/cm. This P-E vertical drift originates from the very asymmetric conduction of the Pt/NBT/Pt capacitors at different polarities, as testified by the current density-electric field curves. Such drift can be caused by the existence of different barrier heights at the bottom and top Pt/Na0.5Bi0.5TiO3 interfaces. In addition, based on the combined RBS and x-ray data, we suggest that the chemical composition variation across the layer also impacts on the polarization vertical drift. Finally, the nanoscale electrical properties of the thinnest film have been characterized by both tunneling atomic force microscopy (TUNA) and piezoforce microscopy (PFM). The TUNA data revealed that leakage currents cannot be noticeably detected below 8 or 10 V, in negative or positive biases, respectively. The PFM data showed that most of the grains seem to be constituted of single ferroelectric domains. In addition, the recorded d33 piezoloops are strongly distorted, and systematically remain in the vertical positive side, in agreement with the vertical drift observed for the macroscopic ferroelectric data. The presence of self-polarization within our thinnest film is finally invoked, and supported by some piezohistogram, in order to justify the distorted shape of the loops as well as the supplementary horizontal shift.

PIXE/RBS as a tool to study cementitious materials: Application to the dynamic leaching of concrete

The suitability of the application of Ion Beam Analysis (IBA) techniques such as Particle Induced X-ray Emission spectrometry (PIXE) and Rutherford Backscattering Spectrometry (RBS) to elemental depth profiling in concrete is analysed, studying hardened samples of concrete prior to and after a dynamic leaching test. A calibration of the data has been done by comparing the results obtained by IBA techniques with those obtained by Chemical and Thermogravimetric Analysis (TG/DTA). From PIXE and RBS data relevant information about the migration of minor elements, within the concrete matrix after leaching is obtained.