Room Temperature Resistivity Research Articles

Engineering antiphase domain boundaries boosted tunable ferromagnetic insulation

Interface-engineered superlattices composed of perovskite PrCoO3 and brownmillerite CaCoO2.5 ([(PCO)n/(CCO)n]m) were designed and fabricated on (001) SrTiO3 substrates with integrated antiphase domain boundaries (APBs) for investigating ferromagnetic insulating phenomenon. The APBs were formed at the surface-step-terrace edges, and the densities of APBs can be regulated by the periods of the superlattices. In these superlattices, ferromagnetic insulating properties were found to be significantly modulated by the APBs. The room-temperature resistivity of the n = 1 superlattice increases by more than three orders of magnitude than that of the n = 5 superlattice and more than five orders of magnitude than that of the Pr0.5Ca0.5CoO3-δ alloy films. The insulation behavior is primarily derived from the charge carriers scattering at the APBs, which block the charge carriers transferring along the in-plane direction. These results could propel the advancement of multifunctional material genetics and provide a strategic approach for the development of artificial materials with tunable properties.

Ultrahigh Power Factor of Sputtered Nanocrystalline N-Type Bi2Te3 Thin Film via Vacancy Defect Modulation and Ti Additives.

Magnetron-sputtered thermoelectric thin films have the potential for reproducibility and scalability. However, lattice mismatch during sputtering can lead to increased defects in the epitaxial layer, which poses a significant challenge to improving their thermoelectric performance. In this work, nanocrystalline n-type Bi2Te3 thin films with an average grain size of ≈110nm are prepared using high-temperature sputtering and post-annealing. Herein, it is demonstrated that high-temperature treatment exacerbates Te evaporation, creating Te vacancies and electron-like effects. Annealing improves crystallinity, increases grain size, and reduces defects, which significantly increases carrier mobility. Furthermore, the pre-deposited Ti additives are ionized at high temperatures and partially diffused into Bi2Te3, resulting in a Ti doping effect that increases the carrier concentration. Overall, the 1µm thick n-type Bi2Te3 thin film exhibits a room temperature resistivity as low as 3.56 × 10-6 Ω∙m. Notably, a 5µm thick Bi2Te3 thin film achieves a record power factor of 6.66mWmK-2 at room temperature, which is the highest value reported to date for n-type Bi2Te3 thin films using magnetron sputtering. This work demonstrates the potential for large-scale of high-quality Bi2Te3-based thin films and devices for room-temperature TE applications.

Effects of Ni cation ratio and sintering temperature on microstructure and electrical properties of NiMnCoO4-based ceramics

Negative temperature coefficient (NTC) thermistors as temperature sensors play an important role in various electrical/electronic devices and are widely applied in the fields such as, automotive sensor modules, home appliances and control applications. The electrical properties of NTC thermistors can be effectively controlled by regulating the content of their chemical components or changing the microstructures. Therefore, this study investigated the effects of Ni cation ratio and sintering temperature on microstructures, crystal structures, and electrical properties of NiMnCoO4-based ceramics. With increasing Ni content, it was found that sinterability of NiMnCoO4-based ceramics was decreased with forming rock-salt phase of NiO, resulting in degrading resistivity. Furthermore, the spinel structures were detected by X-ray diffraction analysis regardless of sintering temperatures. Notably, values of average grain size for sintered samples were increased with increasing sintering temperature. Besides, it was clarified that electrical properties were significantly influenced by average grain size. The room temperature resistivity was increased from approximately 300 kΩ⋅cm for the sintered sample at 1100°C to about 600 kΩ⋅cm for for the sintered sample at 1300oC. On the other hand, the B(25/85) constant was not significantly influenced by the sintering temperature. Accordingly, it is expected that the results of this study are useful for controlling electrical properties of MnCoNiO4-based ceramics.

Accessing bands with extended quantum metric in kagome Cs 2 Ni 3 S 4 through soft chemical processing

Flat bands that do not merely arise from weak interactions can produce exotic physical properties, such as superconductivity or correlated many-body effects. The quantum metric can differentiate whether flat bands will result in correlated physics or are merely dangling bonds. A potential avenue for achieving correlated flat bands involves leveraging geometrical constraints within specific lattice structures, such as the kagome lattice; however, materials are often more complex. In these cases, quantum geometry becomes a powerful indicator of the nature of bands with small dispersions. We present a simple, soft-chemical processing route to access a flat band with an extended quantum metric below the Fermi level. By oxidizing Ni-kagome material Cs 2 Ni 3 S 4 to CsNi 3 S 4 , we see a two orders of magnitude drop in the room temperature resistance. However, CsNi 3 S 4 is still insulating, with no evidence of a phase transition. Using experimental data, density functional theory calculations, and symmetry analysis, our results suggest the emergence of a correlated insulating state of unknown origin.

Effects of different valence of starting oxides on the structure and properties of Co-Mn-Fe-Zn-Ni-O high-entropy ceramics

In this work, using different manganese sources, Co-Mn-Fe-Zn-Ni-O high-entropy ceramics (HECs) were synthesized via the solid-phase method. X-ray diffraction (XRD) data showed that the HECs consist of rock salt and spinel phases, and the choice of raw materials has a great influence on the phase composition and lattice distortion of HECs. Scanning Electron Microscope (SEM) and Energy Dispersive Spectrometer (EDS) analyses showed that the HECs have dense microstructures, with the major elements conforming to iso-atomic ratios. X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy data showed that Mn3+ ions with Jahn-Teller effects distort the [MnO6] octahedra, affecting the electrical properties and aging stability of the material. The room-temperature resistivity of the HEC systems ranged from 20.81 kΩ cm to 35.43 kΩ cm, and the B25/50 resistivity values varied between 4037 K and 4048 K. The resistance drift was observed to be less than 0.70 % after aging at 125 °C for 1000 h. Impedance analyses suggested that the electrical properties of the high-entropy ceramics can be modulated by tailoring the grain size and grain boundary morphology. Selecting suitable raw materials based on valence-induced effects and the tendency of ions to occupy specific sites offers new insights into the design and synthesis of tailor-made high-entropy NTC ceramics.

Conductive single-phase SrMoO3 epitaxial films synthesized in pure Ar ambience via plasma-assisted radio frequency sputtering

ABSTRACT The cubic perovskite SrMoO3 with a paramagnetic ground state and remarkably low room-temperature resistivity has been considered as a suitable candidate for the new-era oxide-based technology. However, the difficulty of preparing single-phase SrMoO3 thin films by hydrogen-free sputtering has hindered their practical use, especially due to the formation of thermodynamically favorable SrMoO4 impurity. In this work, we developed a radio frequency sputtering technology enabling the reduction reaction and achieved conductive epitaxial SrMoO3 films with pure phase from a SrMoO4 target in a hydrogen-free, pure argon environment. We demonstrated the significance of controlling the target-to-substrate distance (TSD) on the synthesis of SrMoO3; the film resistivity drastically changes from 1.46 × 105 μΩ·cm to 250 μΩ·cm by adjusting the TSD. Cross-sectional microstructural analyses demonstrated that films with the lowest resistivity, deposited for TSD = 2.5 cm, possess a single-phase SrMoO3 with an epitaxial perovskite structure. The formation mechanism of the conductive single-phase SrMoO3 films can be attributed to the plasma-assisted growth process by tuning the TSD. Temperature-dependent resistivity and Hall effect studies revealed metal-like conducting properties for low-resistive SrMoO3 films, while the high-resistive ones displayed semiconductor-like behavior. Our approach makes hydrogen-free, reliable and cost-efficient scalable deposition of SrMoO3 films possible, which may open up promising prospects for a wide range of future applications of oxide materials.

Effect of Mg/Ag co–doping on crystal structure, optical, and transport properties of SnO2 compound

The attempt to search for novel materials for optoelectronics material has become a highly debated and intensively investigated field of study. Within the scope of this investigation, Sn0.94Ag0.06-xMgxO2 (0 ≤ x ≤ 0.06) polycrystalline samples were produced using the traditional solid–state reaction method, and their crystalline structure, micro–structure, Raman spectroscopy, optical, and transport characteristics were investigated. Confirmation of a single rutile phase with a tetragonal crystal structure through XRD (X–ray diffraction) analysis is revealed. The morphology study by scanning electron microscopy indicated the formation of nanometric grains. All elements are evenly distributed throughout the structure, as seen by the elemental color mapping. The successful incorporation of Mg/Ag to the SnO2 lattice is evidenced by two prominent peaks in the Raman spectra of these compounds, with wavenumbers of 634 and 775 cm−1, which correspond to the A1g and B2g Raman modes, respectively. The UV–Vis spectrophotometer facilitated the acquisition of absorbance and transmittance data, which revealed that the optical band gap exhibited an expansion when the quantity of Mg/Ag co–doping increased in the SnO2 material. The transmittance value was also shown to increase from 80 % to 90 % with increased Mg co–doping concentration. The Maxwell–Weigner model has been employed to fully understand how the dielectric constant (εr), loss tangent (tan δ), complex impedance, and ac conductivity of Mg/Ag co–doped SnO2 compounds behave depending on frequency. The current–voltage (I–V) characteristics of the sample were measured using a Keithley 6517b electrometer in two–probe mode with a Tin metal pressure contact. The properties of I–V exhibited an Ohmic behavior. A study on the room temperature resistivity reveled that the materials are highly resistive in the nature.

Flexible Positive Temperature Coefficient Composites (PVAc/EVA/GP-CNF) with Room Temperature Curie Point.

Polymeric positive temperature coefficient (PTC) materials with low switching temperature points are crucial for numerous electronic devices, which typically function within the room temperature range (0-40 °C). Ideal polymeric PTC materials for flexible electronic thermal control should possess a room-temperature switching temperature, low room-temperature resistivity, exceptional mechanical flexibility, and adaptive thermal control properties. In this study, a novel PTC material with a room-temperature switching temperature and superb mechanical properties has been designed. A blend of a semi-crystalline polymer EVA with a low melting temperature (Tm) and an amorphous polymer (PVAc) with a low glass transition temperature (Tg) was prepared. Low-cost graphite was chosen as the conductive filler, while CNF was incorporated as a hybrid filler to enhance the material's heating stability. PVAc0.4/EVA0.6/GP-3wt.% CNF exhibited the lowest room temperature resistivity, and its PTC strength (1.1) was comparable to that without CNF addition, with a Curie temperature of 29.4 °C. Room temperature Joule heating tests revealed that PVAc0.4/EVA0.6/GP-3wt.% CNF achieved an equilibrium temperature of approximately 42 °C at 25 V, with a heating power of 3.04 W and a power density of 3.04 W/cm2. The Young's modulus of PVAc0.4/EVA0.6/GP-3wt.% CNF was 9.24 MPa, and the toughness value was 1.68 MJ/m3, indicating that the elasticity and toughness of the composites were enhanced after mixing the fillers, and the mechanical properties of the composites were improved by blending graphite with CNF.

Strain and orientation modulated optoelectronic properties of La-doped SrSnO3 epitaxial films

We have studied the structural, electrical, and optical properties of La0.05Sr0.95SnO3 thin films, which exhibited a strong dependence upon the substrate’s orientation and strain. X-ray diffraction results show that the LSSO films grow epitaxially on (001) and (011)-oriented LaAlO3 substrates, and the in-plane compressive strain decreases gradually upon increasing film thickness. Room-temperature resistivity varies from 4.23 (13.0) to 1.37 (4.76) mΩ cm as the film thickness increases for (001) orientation ((011) orientation). Temperature dependent resistivity curves of all the samples show a metal–semiconductor transition (MST), which can be explained by the electron–electron interactions below MST rather than weak localization. Both reducing the in-plane compressive strain and transferring the orientation from (011) to (001) can drive the MST point shifts toward lower temperature, indicative of the enhancement of the metallic transport in the films. The band gap increases upon increasing film thickness due to Burstein-Moss effect. The charge distributions of Sn and O from density functional theory (DFT) calculations illustrate that (001)-plane has a better conductivity. Furthermore, our DFT results also demonstrate that decreasing the in-plane strain will lead to a smaller electron effective mass, thus the increased carrier mobility can be obtained. These comprehensive investigations advance our knowledge of the optoelectronic characteristics and provide valuable insights for future research in related transparent materials.

Effect of TiC addition on microstructure and properties of network structured TiC–ZrO2 composite conductive ceramics

Zirconia (ZrO2) ceramics have excellent mechanical properties and high-temperature conductivities. However, ZrO2 ceramics do not possess room-temperature conductivity, which significantly limits their application as functional components in smart communication devices and wearable smart products. To achieve room-temperature conductivity in ZrO2 ceramics, this study prepared a network-structured TiC–ZrO2 composite conductive ceramic with a low titanium carbide (TiC) addition using pressureless sintering. The influence of the TiC addition on the microstructure, mechanical properties, and electrical properties of the TiC–ZrO2 composite material was investigated. The results showed that the composite material consists of cubic zirconia (c-ZrO2), tetragonal zirconia (t-ZrO2), and titanium carbide (TiC) phases. When the TiC content was 11 vol %, the relative density, open porosity, flexural strength, and fracture toughness of the sample were 98.6 ± 0.1 %, 0.16 ± 0.06 %, 383 ± 38 MPa, and 4.66 ± 0.26 MPa m1/2, respectively. The electrical percolation threshold of the TiC–ZrO2 composite was between 8.0 and 11.0 vol %. When the TiC content is 18.8 vol %, the sample exhibited the lowest room-temperature resistivity of 3.00 × 10−5 Ω m. The electrical resistance of the TiC–ZrO2 composite material is mainly attributed to the grain boundary effect. With increasing TiC content, the resistivity of the composite material decreased, exhibiting linear conductivity and achieving conductive percolation characteristics.

An antiferromagnetic spin phase change memory

The electrical outputs of single-layer antiferromagnetic memory devices relying on the anisotropic magnetoresistance effect are typically rather small at room temperature. Here we report a new type of antiferromagnetic memory based on the spin phase change in a Mn-Ir binary intermetallic thin film at a composition within the phase boundary between its collinear and noncollinear phases. Via a small piezoelectric strain, the spin structure of this composition-boundary metal is reversibly interconverted, leading to a large nonvolatile room-temperature resistance modulation that is two orders of magnitude greater than the anisotropic magnetoresistance effect for a metal, mimicking the well-established phase change memory from a quantum spin degree of freedom. In addition, this antiferromagnetic spin phase change memory exhibits remarkable time and temperature stabilities, and is robust in a magnetic field high up to 60 T.

Achieving semi-metallic conduction in Al-rich AlGaN: Evidence of Mott transition

The development of high performance wide-bandgap AlGaN channel transistors with high current densities and reduced Ohmic losses necessitates extremely highly doped, high Al content AlGaN epilayers for regrown source/drain contact regions. In this work, we demonstrate the achievement of semi-metallic conductivity in silicon (Si) doped N-polar Al0.6Ga0.4N grown on C-face 4H-SiC substrates by molecular beam epitaxy. Under optimized conditions, the AlGaN epilayer shows smooth surface morphology and a narrow photoluminescence spectral linewidth, without the presence of any secondary peaks. A favorable growth window is identified wherein the free electron concentration reaches as high as ∼1.8 × 1020 cm−3 as obtained from Hall measurements, with a high mobility of 34 cm2/V·s, leading to a room temperature resistivity of only 1 mΩ·cm. Temperature-dependent Hall measurements show that the electron concentration, mobility, and sheet resistance do not depend on temperature, clearly indicating dopant Mott transition to a semi-metallic state, wherein the activation energy (Ea) falls to 0 meV at this high value of Si doping for the AlGaN films. This achievement of semi-metallic conductivity in Si doped N-polar high Al content AlGaN is instrumental for advancing ultrawide bandgap electronic and optoelectronic devices.

Predictive design of novel nickel-based superalloys beyond Haynes 282

Nickel-based superalloys are in great demand for harsh-service conditions involving high temperatures and oxidative environments. Haynes 282 stands out due to its excellent high-temperature properties and easy fabricability. However, the upper operation temperature of Haynes 282 is limited due to its relatively low liquidus temperature. Equipped with high-fidelity density-functional theory calculations and high-throughput experimentation methodology, we explored new compositional spaces that exhibit higher liquidus temperature and higher strength. While maintaining the manufacturability, the newly designed alloy shows improved strength and ductility at room temperature and better oxidation resistance up to 800 °C. The new compositions showcase a minor change in the refractory and metalloid content can significantly impact the mechanical and oxidation performance of superalloys.

Optimising Recycling Processes for Polyimine-Based Vitrimer Carbon Fibre-Reinforced Composites: A Comparative Study on Reinforcement Recovery and Material Properties.

We investigated the recycling process of carbon fibre-reinforced polyimine vitrimer composites and compared composites made from virgin and recycled fibres. The vitrimer matrix consisted of a two-component polyimine-type vitrimer system, and as reinforcing materials, we used nonwoven felt and unidirectional carbon fibre. Various diethylenetriamine (DETA) and xylene solvent ratios were examined to find the optimal dissolution conditions. The 20:80 DETA-xylene ratio provided efficient dissolution, and the elevated temperature (80 °C) significantly accelerated the process. Scaling up to larger composite structures was demonstrated. Scanning electron microscopy (SEM) confirmed effective matrix removal, with minimal residue on carbon fibre surfaces and good adhesion in recycled composites. The recycled nonwoven composite exhibited a decreased glass transition temperature due to the residual solvents in the matrix, while the UD composite showed a slight increase. Dynamic mechanical analysis on the recycled composite showed an increased storage modulus for nonwoven composites at room temperature and greater resistance to deformation at elevated temperatures for the UD composites. Interlaminar shear tests indicated slightly reduced adhesion strength in the reprocessed composites. Overall, this study demonstrates the feasibility of recycling vitrimer composites, emphasising the need for further optimisation to ensure environmental and economic sustainability while mitigating residual solvent and matrix effects.

Preparation and Properties of Epoxy Adhesives with Fast Curing at Room Temperature and Low-Temperature Resistance.

Developing a highly efficient multifunctional epoxy adhesive is still an enormous challenge, which can rapidly cure at room temperature and has excellent low-temperature resistance performance and is crucial for the epoxy adhesive and electrical sealing fields during severe cold seasons. Herein, diglycidyl phthalate (DP) was synthesized with phthalic anhydride (PA) and epichlorohydrin (ECH) to enhance the curing rate and low-temperature resistance of bisphenol A diglycidyl ether (DGEBA) adhesive. The modified DP/DGEBA adhesives were systematically analyzed by gel time, mechanical properties, and aging resistance (time, temperature, and dry/wet treatment). The results showed that DP with highly active ester groups significantly accelerates the curing speed of DP/DGEBA. DP's rigid aromatic ring-benzene ring and flexible group-ester group gave the adhesive better low-temperature resistance. When the addition of DP was 10 wt % (based on the mass of DGEBA), the gel time of DP/DGEBA epoxy adhesives was reduced by 58 min compared to unmodified DGEBA epoxy adhesive, and after aging at low temperature (-20 °C) for 7 days, the tensile shear strengths of polyvinyl chloride (PVC) and aluminum plate increased by 76.2 and 80.6%, respectively. The results of non-isothermal curing kinetics and dynamic mechanical analysis suggested that when the amount of DP was 10 wt %, the reaction activation energy of DP/DGEBA epoxy adhesive decreased by 4.0%, and the cross-linking density increased by 8.9%. Moreover, the toughness of the modified adhesive was also improved. This study opens up a feasible way for the development of a low temperature-resistant epoxy adhesive cured rapidly at room temperature in practical application.

Nanopatterning Induced Si Doping in Amorphous Ga2O3 for Enhanced Electrical Properties and Ultra-Fast Photodetection.

Ga2O3 has emerged as a promising material for the wide-bandgap industry aiming at devices beyond the limits of conventional silicon. Amorphous Ga2O3 is widely being used for flexible electronics, but suffers from very high resistivity. Conventional methods of doping like ion implantation require high temperatures post-processing, thereby limiting their use. Herein, an unconventional method of doping Ga2O3 films with Si, thereby enhancing its electrical properties, is reported. Ion-beam sputtering (500eV Ar+) is utilized to nanopattern SiO2-coated Si substrate leaving the topmost part rich in elemental Si. This helps in enhancing the carrier conduction by increasing n-type doping of the subsequently coated 5nm amorphous Ga2O3 films, corroborated by room-temperature resistivity measurement and valence band spectra, respectively, while the nanopatterns formed help in better light management. Finally, as proof of concept, metal-semiconductor-metal (MSM) photoconductor devices fabricated on doped, rippled films show superior properties with responsivity increasing from 6 to 433mAW-1 while having fast detection speeds of 861µs/710µs (rise/fall time) as opposed to non-rippled devices (377ms/392ms). The results demonstrate a facile, cost-effective, and large-area method to dope amorphous Ga2O3 films in a bottom-up approach which may be employed for increasing the electrical conductivity of other amorphous oxide semiconductors as well.

Expanding the applications of the wear-resistant titanium aluminum nitride thin-film to include temperature sensing

This study investigates an approach to temperature sensing by integrating Titanium Aluminum Nitride (TiAlN), originally engineered for wear and corrosion applications, as a temperature sensor within a multilayered thin film system. A nitride multilayer system was developed by physical vapor deposition (PVD) using a single four-target magnetron sputtering chamber; intermediate vacuum interruption steps were employed for masking procedures. The multilayer architecture design aimed to provide the sensor layer with mechanical protection and electrical shielding. Structural and electrical characterization of the TiAlN single layer revealed semiconductor behavior and stable electrical resistance up to 750 °C, with minimal signal stabilization requirements. Despite the higher Al content, the TiAlN temperature sensor exhibited a cubic crystal structure characterized by diffuse nanolayers, resulting from a two-fold rotational deposition and target configuration. A detailed examination of the multilayer system cross-section containing the TiAlN sensor was conducted using scanning transmission electron microscopy (STEM). The analysis revealed its columnar morphology with the presence of typical PVD growth defects, including voids and droplets. While the presence of these defects may impact the electrical characteristics of the sensor, the selected experimental conditions effectively maintained the structural integrity of the multilayer system despite the vacuum interruptions caused by masking procedures. Validation experiments confirmed the functionality of the multilayer system for temperature measurements up to 400 °C. The signal acquisition system addressed room temperature resistance variations and low sensitivity (thermistor coefficient ∼100 K), resulting in a measured error of approximately 6%. This study demonstrates promising results of TiAlN as a temperature sensor within a multilayered system, expanding its range of potential applications.

Advancements in Uncooled Bolometer Technology: Shortwave Infrared Detection via CuFeSe2 Nanocrystal Colloidal Thin Films

Microbolometers have emerged as a cost‐effective alternative to cooled infrared photon detectors, albeit with certain trade‐offs in terms of responsivity (), detectivity (), and response time (). The research in this field is driven by the potential applications in night vision devices, military surveillance, and autonomous vehicles, leading to a growing interest in exploring new materials to bridge the performance gap between cooled photon detectors and uncooled bolometers. This study focuses on the optoelectronic and bolometric characteristics of nanocrystals (NCs) in a colloidal solution. These NCs exhibit a significant change in resistivity (ρ) when subjected to temperature variations ranging from 170 to 400 K. Specifically, the temperature coefficient of resistance (TCR), α, is 1.9% per Kelvin for a room temperature resistivity of 505 Ω cm. Furthermore, the responsivity of NCs is reported to be 0.101 A W−1, and the Hall mobility of the colloidal solution is determined as . Finally, a comprehensive comparison is conducted between the performance metrics of established bolometer materials, such as VOx and a‐Si, and those of colloidal NCs. Based on the results, colloidal NCs are a promising option for future bolometer technology.

The construction of structural defects in MoAlB thin films by leveraging the enhanced Kirkendall effect for improved infrared stealth performance

MoAlB, known for its exceptional oxidation resistance and anti-ablation properties, holds significant promise as a protective thin film for high-temperature components in military equipment. However, the high thermal conductivity of MoAlB poses a challenge to its compatibility with infrared stealth performance. In this study, structural defects were intentionally implanted into the MoAlB thin film by leveraging the amplified Kirkendall effect to hinder heat propagation. The results revealed that the MoAlB MAB phase thin film with a notable amount of edge dislocations was achieved by subjecting the post-annealed (Mo–B)/Al nanostructured multilayers (NMs) to an elevated temperature of 700 °C. The room-temperature resistivity of the thin film was 1.43 μΩ m. Furthermore, the infrared emissivity of the thin film was assessed within the mid-infrared wavelength range, ranging from 0.11 to 0.25. Simultaneously, the resulting thin film was found to possess a low thermal conductivity of 11.44 W m−1 K−1, consequently achieving excellent infrared stealth capability.

Nanostructured Oxide (SnO2, FTO) Thin Films for Energy Harvesting: A Significant Increase in Thermoelectric Power at Low Temperature.

Previous studies have shown that undoped and doped SnO2 thin films have better optical and electrical properties. This study aims to investigate the thermoelectric properties of two distinct semiconducting oxide thin films, namely SnO2 and F-doped SnO2 (FTO), by the nebulizer spray pyrolysis technique. An X-ray diffraction study reveals that the synthesized films exhibit a tetragonal structure with the (200) preferred orientation. The film structural quality increases from SnO2 to FTO due to the substitution of F- ions into the host lattice. The film thickness increases from 530 nm for SnO2 to 650 nm for FTO films. Room-temperature electrical resistivity decreases from (8.96 ± 0.02) × 10-2 Ω·cm to (4.64 ± 0.01) × 10-3 Ω·cm for the SnO2 and FTO thin films, respectively. This is due to the increase in the carrier density of the films, (2.92 ± 0.02) × 1019 cm-3 (SnO2) and (1.63 ± 0.03) × 1020 cm-3 (FTO), caused by anionic substitution. It is confirmed that varying the temperature (K) enhances the electron transport properties. The obtained Seebeck coefficient (S) increases as the temperature is increased, up to 360 K. The synthesized films exhibit the S value of -234 ± 3 μV/K (SnO2) and -204 ± 3 μV/K (FTO) at 360 K. The estimated power factor (PF) drastically increases from ~70 (μW/m·K2) to ~900 (μW/m·K2) for the SnO2 and FTO film, respectively.