Room Temperature Resistivity Research Articles

Advancements in Uncooled Bolometer Technology: Shortwave Infrared Detection via CuFeSe2 Nanocrystal Colloidal Thin Films

Microbolometers have emerged as a cost‐effective alternative to cooled infrared photon detectors, albeit with certain trade‐offs in terms of responsivity (), detectivity (), and response time (). The research in this field is driven by the potential applications in night vision devices, military surveillance, and autonomous vehicles, leading to a growing interest in exploring new materials to bridge the performance gap between cooled photon detectors and uncooled bolometers. This study focuses on the optoelectronic and bolometric characteristics of nanocrystals (NCs) in a colloidal solution. These NCs exhibit a significant change in resistivity (ρ) when subjected to temperature variations ranging from 170 to 400 K. Specifically, the temperature coefficient of resistance (TCR), α, is 1.9% per Kelvin for a room temperature resistivity of 505 Ω cm. Furthermore, the responsivity of NCs is reported to be 0.101 A W−1, and the Hall mobility of the colloidal solution is determined as . Finally, a comprehensive comparison is conducted between the performance metrics of established bolometer materials, such as VOx and a‐Si, and those of colloidal NCs. Based on the results, colloidal NCs are a promising option for future bolometer technology.

The construction of structural defects in MoAlB thin films by leveraging the enhanced Kirkendall effect for improved infrared stealth performance

MoAlB, known for its exceptional oxidation resistance and anti-ablation properties, holds significant promise as a protective thin film for high-temperature components in military equipment. However, the high thermal conductivity of MoAlB poses a challenge to its compatibility with infrared stealth performance. In this study, structural defects were intentionally implanted into the MoAlB thin film by leveraging the amplified Kirkendall effect to hinder heat propagation. The results revealed that the MoAlB MAB phase thin film with a notable amount of edge dislocations was achieved by subjecting the post-annealed (Mo–B)/Al nanostructured multilayers (NMs) to an elevated temperature of 700 °C. The room-temperature resistivity of the thin film was 1.43 μΩ m. Furthermore, the infrared emissivity of the thin film was assessed within the mid-infrared wavelength range, ranging from 0.11 to 0.25. Simultaneously, the resulting thin film was found to possess a low thermal conductivity of 11.44 W m−1 K−1, consequently achieving excellent infrared stealth capability.

Nanostructured Oxide (SnO2, FTO) Thin Films for Energy Harvesting: A Significant Increase in Thermoelectric Power at Low Temperature.

Previous studies have shown that undoped and doped SnO2 thin films have better optical and electrical properties. This study aims to investigate the thermoelectric properties of two distinct semiconducting oxide thin films, namely SnO2 and F-doped SnO2 (FTO), by the nebulizer spray pyrolysis technique. An X-ray diffraction study reveals that the synthesized films exhibit a tetragonal structure with the (200) preferred orientation. The film structural quality increases from SnO2 to FTO due to the substitution of F- ions into the host lattice. The film thickness increases from 530 nm for SnO2 to 650 nm for FTO films. Room-temperature electrical resistivity decreases from (8.96 ± 0.02) × 10-2 Ω·cm to (4.64 ± 0.01) × 10-3 Ω·cm for the SnO2 and FTO thin films, respectively. This is due to the increase in the carrier density of the films, (2.92 ± 0.02) × 1019 cm-3 (SnO2) and (1.63 ± 0.03) × 1020 cm-3 (FTO), caused by anionic substitution. It is confirmed that varying the temperature (K) enhances the electron transport properties. The obtained Seebeck coefficient (S) increases as the temperature is increased, up to 360 K. The synthesized films exhibit the S value of -234 ± 3 μV/K (SnO2) and -204 ± 3 μV/K (FTO) at 360 K. The estimated power factor (PF) drastically increases from ~70 (μW/m·K2) to ~900 (μW/m·K2) for the SnO2 and FTO film, respectively.

Preparation and PTC properties of multilayer graphene/CB/HDPE conductive composites with different cross-linking systems

Multi-layer graphene/carbon black (CB)/high density polyethylene (HDPE) conductive composites with different systems were prepared by melt compounding. The composites were subsequently cross-linked and modified using peroxide cross-linking and radiation cross-linking techniques. The effects of these different cross-linking systems on the room temperature resistivity, positive temperature coefficient (PTC) strength, cyclic stability, and crystallinity of the multi-layer graphene composites were investigated. The results demonstrated that cross-linking modification could increase the room temperature resistivity of the composites. Moreover, as the cross-linking degree increased, the PTC strength also increased, and the negative temperature coefficient (NTC) effect disappeared. Within the range of room temperature resistivity less than 1 Ω cm, the maximum recommended usage of peroxide was 0.3 %. Among the composites with the same ratio, the dual cross-linking system exhibited the best electrical properties. The PTC strength increased by one order of magnitude compared to the un-cross-linked composites, and the cyclic stability was optimal. In the PTC strength test, the result yielded 3.4 in three tests.

Record high room temperature resistance switching in ferroelectric-gated Mott transistors unlocked by interfacial charge engineering

The superior size and power scaling potential of ferroelectric-gated Mott transistors makes them promising building blocks for developing energy-efficient memory and logic applications in the post-Moore’s Law era. The close to metallic carrier density in the Mott channel, however, imposes the bottleneck for achieving substantial field effect modulation via a solid-state gate. Previous studies have focused on optimizing the thickness, charge mobility, and carrier density of single-layer correlated channels, which have only led to moderate resistance switching at room temperature. Here, we report a record high nonvolatile resistance switching ratio of 38,440% at 300 K in a prototype Mott transistor consisting of a ferroelectric PbZr0.2Ti0.8O3 gate and an RNiO3 (R: rare earth)/La0.67Sr0.33MnO3 composite channel. The ultrathin La0.67Sr0.33MnO3 buffer layer not only tailors the carrier density profile in RNiO3 through interfacial charge transfer, as corroborated by first-principles calculations, but also provides an extended screening layer that reduces the depolarization effect in the ferroelectric gate. Our study points to an effective material strategy for the functional design of complex oxide heterointerfaces that harnesses the competing roles of charge in field effect screening and ferroelectric depolarization effects.

Impact of the change in charge compensation mechanism on the electrical, dielectric, and structural properties of La-doped BaTiO3 ceramics

La-doped BaTiO3 ceramics are essential materials in electronic devices, finding applications in multilayer ceramic capacitors and positive temperature coefficient thermistors. While the electrical properties of La-doped BaTiO3 have been investigated, the impact of its room-temperature resistivity anomaly on dielectric properties remains unclear. We synthesized pristine and La-doped BaTiO3 (0.1 – 0.5 mol%) powders via hydrothermal methods, and then sintered bulk samples. Their resistivities (DC and AC), Curie temperature, room-temperature dielectric constant, and lattice volume with varying La doping concentrations were characterized. Beyond 0.3 mol%, the shift from electronic to ionic charge compensation mechanisms resulted in abrupt changes in resistivities, Curie temperature, and dielectric constant near 0.3 mol%. Given minimal changes in average grain size and relative density near 0.3 mol% La, the dominant factor influencing the dielectric constant peaking near this concentration was the shift in charge compensation mechanism.

Investigation of microstructure and tribological properties of CoFeNi1.5VZrx eutectic high entropy alloys optimized by tunning Zr content

This study investigates the influence of Zr on the microstructural evolution, mechanical and tribological properties of CoFeNi1.5VZrx (x = 0–0.6) eutectic high entropy alloys (EHEAs). The main composition evolutes from single FCC to FCC and Laves phase with increasing Zr content. Simultaneously, the microstructure changed from hypoeutectic to eutectic and then to hypereutectic with decreasing in grain size. The increase in Zr content improves the wear resistance of EHEAs at 25–800 °C. The rise in strength and hardness is the main reason for improved room-temperature wear resistance of EHEAs. The formation of gradient nano-tribo-layer and the transformation of the wear subsurface layer components from the FCC phase to the highly wear-resistant Laves phase help to enhance the high-temperature wear resistance of the EHEAs.

Promoted high-temperature strength and room-temperature plasticity synergy by tuning dendrite segregation in NbMoTaW refractory high-entropy alloy

NbMoTaW refractory high-entropy alloy (RHEA) exhibits high strength and excellent softening resistance at elevated temperature, while normal compositional modification cannot overcome the trade-off between high-temperature (HT) strength and room-temperature (RT) plasticity. Here, we proposed a heterostructure strategy by tuning dendrite segregation to reach large RT plasticity without deterioration in HT strength. The optimized Nb45Mo45Ta5W5 RHEA shows large RT plasticity of 6.1% and high yield strength of 440 MPa at 1873 K, which mainly originates from the heterostructure. Nanoscale precipitates form in the interdendrite region after annealing at 1873 K, which further increases the RT plasticity to 9.0% with a comparable yield strength of 415 MPa at 1873 K. The strength retention up to 1873 K arises from the large modulus misfit of Nb45Mo45Ta5W5 alloy and the hetero-deformation in the dendrite and interdendrite regions. The nanoscale precipitates in the interdendrite region is temperature-dependent and stress-promoted, which contributes to work-hardening at RT and softening resistance at 1873 K. The dendritic heterostructure strategy in this work provide a feasible method to toughen brittle RHEAs and paves the way to design RHEAs with excellent HT strength in combination of large RT plasticity.

Achieving superior pyroresistive reproducibility at HDPE/PVDF composites with tailored conductive phase size

AbstractCommercial conductive polymer composites (CPCs) with positive temperature coefficient (PTC) behavior usually suffer from inherent poor reproducibility of pyroresistive property. Herein, a conductive carbon black (CB)/high density polyethylene (HDPE)/polyvinylidene fluoride (PVDF) composite with outstanding PTC reproducibility were prepared through introducing cellulose nanocrystals (CNCs) grafted with methyl methacrylate (CNC‐g‐PMMA). Following the minimum interfacial energy mechanism, the CNC‐g‐PMMA tends to locate in PVDF of binary polymer composites. A much finer morphology of conductive CB/HDPE phase is hence obtained owing to the increasement of PVDF/HDPE viscosity ratio by introducing CNC‐g‐PMMA. Undergoing multiple repeated temperature cycles, the room temperature resistance and PTC intensity of as‐prepared material keep almost unchanged, which demonstrates superior PTC reproducibility. The improving mechanism of PTC reproducibility has also been illustrated in detail. This research provides a facile and valid strategy to enhance the PTC reproducibility and will vastly expand the application of PTC composites in the field of intelligent temperature management.Highlights Assembling binary polymer‐based PTC materials with cocontinuous structure Nanocrystals enables conductive HDPE phase with finer morphology. The precise ranges of viscosity ratio ensure the co‐continuous morphology. Small conductive phase size enhances P reproducibility. Narrow spatial domain restricts the self‐aggregation of conductive fillers.

Mechanical and high-temperature wear resistance properties of WC-reinforced AlCoCrFeNiTi0.5 high entropy alloy matrix composite

x wt.% WC/AlCoCrFeNiTi0.5 (x = 0, 5, 8, 10, 15) high entropy matrix composites (HEAC) with different mass fractions of WC particles were prepared by mechanical alloying (MA) and spark plasma sintering (SPS). Their microstructure, mechanical properties, room-temperature (RT) and high-temperature (HT) wear resistance properties were investigated. It shows the sintered HEACs are mainly composed of a face-centered cubic (FCC) solid solution matrix, (Fe, Co)6W6C, and other carbides. The increase of WC particles leads to the fracture strength and wear resistance of AlCoCrFeNiTi0.5 being increased first and then decreased. The 8 wt% WC/AlCoCrFeNiTi0.5 HEAC shows higher strength and better wear resistance properties due to the formation of carbides and protection of the dense oxide film on the worn surface. The high-temperature wear mechanism is mainly adhesive wear, and oxidative wear in the case with lower WC content, but it becomes adhesive wear, abrasive wear, and oxidative wear in the case with higher WC content. This work provides light for investigating tribological properties of high-entropy matrix composites for surface engineering.

Metal–insulator–superconductor transition in nickelate-based heterostructures driven by topotactic reduction

The discovery of superconductivity in doped infinite-layer nickelates has attracted great interest recently. Here, a metal–insulator–superconductor transition is demonstrated by engineering the process of topotactic reduction. By employing topotactic reduction, a superconducting Nd0.8Sr0.2NiO2 layer is obtained from high-quality Nd0.8Sr0.2NiO3, which is characterized by layer-by-layer growth and low room-temperature resistivity, rather than the low-quality Nd0.8Sr0.2NiO3 with mixed phases. Moreover, an insulating intermediate state is uncovered within the transition from metallic Nd0.8Sr0.2NiO3 to superconducting Nd0.8Sr0.2NiO2, corresponding to a non-monotonic modulation of resistivity driven by topotactic reduction. In the incompletely reduced Nd0.8Sr0.2NiO2+δ, residual oxygen atoms in the Nd/Sr plane disrupt the long-range order of the infinite-layer structure, resulting in suppressed superconductivity with a low transition temperature and non-zero residual resistivity. On the other hand, the superconductivity is optimized in the fully reduced sample, where a sign change in the Hall coefficient is always observed at low temperatures. Our study highlights the diverse electronic states achievable by controlling topotactic reduction, providing valuable insight into the understanding and manipulating of superconductivity in infinite-layer nickelates.

Mechanism of high qualified Mn-Co-Ni-O thin films grown at low temperature

High quality of Mn-Co-Ni-O (MCNO) thin films were prepared by radio frequency (RF) magnetron sputtering deposition at a very low temperature of ≤450 °C. The structure and electrical transport of the films were investigated under different growth and annealing conditions. It was found that the film can be transformed from a mixed conduction mechanism to a single variable range hopping conduction mechanism under appropriate condition. The optimized Mn3+/Mn4+ ratio in the film was close to 1, which was corresponding to the best probability of small polaron hopping, lowest activation energy, lowest room temperature resistivity, large negative resistance temperature coefficient, and the specific preferred (400) orientation. The electrical properties of the film were similar to that prepared under high temperature condition, which promotes the integration of MCNO to the present matured silicon technology. Our results provide an important avenue for the development of next generation of uncooled infrared focal plane arrays.

Current limiting and recovery characteristics of an AC fast recovery superconducting fault current-limiting breaker

With the continuous development of the power grid, the high short-circuit fault current threatens the reliability of the power system. When the short-circuit current is greater than the interrupting capacity of the circuit breaker, the fault current will not be interrupted. Resistive-type superconducting fault current limiter (R-SFCL) has little loss in normal conditions. When a short-circuit fault occurs, R-SFCL can respond within a few milliseconds and limit the fault current. But the recovery time of R-SFCL is too long to satisfy the reclosing demand in the power grid. In this paper, an AC fast recovery superconducting fault current-limiting breaker (FR-SFCB) is proposed. With the operation of a fast switch connected with the superconducting coil, one of the parallel superconducting branches is disconnected, which could provide higher current limiting resistance and decrease the fault current need to be interrupted in fault conditions. Because of the shorter current flowing time, the heat generation and temperature of the advanced disconnected branch are less which can reduce the recovery time significantly. An experimental model is established based on thyristors and superconducting tapes. The effects of prospective current (I p) and the types of superconducting tapes on the current limiting resistance and recovery time of FR-SFCB are investigated. Experimental results show that with the disconnection of the flowing branch, the current limiting resistance of the proposed FR-SFCB increases to more than 3 times of the normal R-SFCL. At the same time, when the FR-SFCB resistance after current limiting is lower than the room temperature resistance, the recovery time of the flowing branch decreases by at least 50%. With access to fast switches, the proposed FR-SFCB can suppress the short-circuit fault current effectively and improve the stability of the power system.

Temperature Dependence of Complex Relative Permeability of the Polycrystalline La0.7Sr0.3MnO3

<p>吾人量測多晶態鑭鍶錳氧變化溫度的電阻率與頻率範圍為 10 kHz 至 10 MHz 的相對複數磁導率特性。樣品室溫電阻率很小，僅為數 m⋅Ωcm。電阻率隨著溫度增加，在相轉變溫度 TP = 361 K 附近顯現金屬到半導體的相轉變。室溫量測到的磁譜顯現與磁壁位移有關的鬆弛特性，色散情況非常明顯。隨著溫度升高，磁導率增加，在居禮溫度 TC前達到最大值，然後迅速下降。當溫度從室溫增加，磁壁位移鬆弛頻率 fr幾乎保持不變。當溫度升高到 TC附近，由於磁導率迅速降低，fr劇烈增加。在 TC以上，磁譜的色散現象消失。量測到的 fr與理論值相當符合，可看出磁壁位移的阻滯來源主要源自於渦電流阻滯。</p> <p> </p><p>The temperature-dependent resistivity and complex relative permeability of the polycrystalline La0.7Sr0.3MnO3 have been investigated in the frequency range 10 kHz -10 MHz. The measured room-temperature resistivity is of the order of mcm. As the temperature increases, the resistivity increases and shows a metal-insulator transition. The transition temperature TP is about 361 K. There are pronounced dispersions of the relaxation in the measured spectra, which are due to the domain-wall displacement. The magnitude of permeability increases with increasing temperature, reaches its maximum value near the Curie temperature TC, and then abruptly drops. As the temperature increases, the relaxation frequency fr almost remains a constant value. However, it rapidly increases around TC due to the suddenly decrease of the permeability. The dispersion phenomena of the permeability spectra disappear above TC. The consistence of the measured and calculated fr value shows that the damping factor of domain-wall displacement mainly comes from the eddy current.</p> <p> </p>

Ultrathin superconducting TaCxN1−x films prepared by plasma-enhanced atomic layer deposition with ion-energy control

This work demonstrates that plasma-enhanced atomic layer deposition (PEALD) with substrate biasing enables the preparation of ultrathin superconducting TaCxN1−x films. By comparing with films grown without substrate biasing, the enhanced ion energies yield a hundredfold reduction in room-temperature resistivity: a comparably low value of 217 μΩ cm is obtained for a 40 nm film. The ion-energy control enables tuning of the composition, counteracts oxygen impurity incorporation, and promotes a larger grain size. Correspondingly, the critical temperature of superconductivity (Tc) displays clear ion-energy dependence. With optimized ion energies, a consistently high Tc around 7 K is measured down to 11 nm film thickness. These results demonstrate the high ultrathin-film quality achievable through PEALD combined with substrate biasing. This process is particularly promising for the fabrication of low-loss superconducting quantum devices.

Thermally Reentrant Crystalline Phase Change in Perovskite-Derivative Nickelate Enabling Reversible Switching of Room-Temperature Electrical Resistivity.

Reversible switching of room-temperature electrical resistivity due to crystal-amorphous transition is demonstrated in various chalcogenides for development of non-volatile phase change memory. However, such reversible thermal switching of room-temperature electrical resistivity has not reported in transition metal oxides so far, despite their enormous studies on the electrical conduction like metal-insulator transition and colossal magnetoresistance effect. In this study, a thermally reversible switching of room-temperature electrical resistivity is reported with gigantic variation in a layered nickelate Sr2.5 Bi0.5 NiO5 (1201-SBNO) composed of (Sr1.5 Bi0.5 )O2 rock-salt and SrNiO3 perovskite layers via unique crystalline phase changes between the conducting 1201-SBNO with ordered (O-1201), disordered Sr/Bi arrangements in the (Sr1.5 Bi0.5 )O2 layer (D-1201), and insulating oxygen-deficient double perovskite Sr2 BiNiO4.5 (d-perovskite). The O-1201 is reentrant by high-temperature annealing of ≈1000°C through crystalline phase change into the D-1201 and d-perovskite, resulting in the thermally reversible switching of room-temperature electrical resistivity with 102 - and 109 -fold variation, respectively. The 1201-SBNO is the first oxide to show the thermally reversible switching of room-temperature electrical resistivity via the crystalline phase changes, providing a new perspective on the electrical conduction for transition metal oxides.

Polymer Electrolytes for Stable and Safer Sodium-Based Batteries

Lithium-ion batteries (LIBs) have powered portable electronics and electric vehicles owing to their high energy density. In addition, the LIBs demand has significantly increased in the last years, raising concerns about the long-term availability and cost of the critical raw materials used in LIB production, e.g., cobalt, lithium, natural graphite, and copper [1,2]. In this scenario, alternative batteries must be developed based on low-cost and environmentally friendly raw materials. Sodium-ion batteries (SIBs) have become real energy storage devices for large-scale stationary applications and light electromobility due to the almost infinite and widely distributed sodium resources, the possibility to be made with environmentally friendly and sustainable raw materials, and lower cost.Liquid electrolytes are the electrolyte of choice for SIBs due to their high ionic conductivity, low viscosity, and good contact with electrodes. Nevertheless, they pose serious safety hazards due to their high volatility, flammability, severe decomposition reactions with the electrode, and risk of leakage. Therefore, alternative electrolytes must be explored for manufacturing safer SIBs. Polymer electrolytes are the best candidate to replace liquid electrolytes due to their higher thermal stability, wider electrochemical stability window, and less reactivity with the electrode. Nevertheless, their practical application is limited because they usually exhibit low ionic conductivity at room temperature and high interfacial resistance, which impoverish the performance of the sodium cells [3]. Adding plasticizers or inorganic fillers into the polymer is one way to enhanced ionic conductivity at room temperature. To keep the safety property of polymer electrolytes, ionic liquids (ILs) are more attractive plasticizers than carbonate-based solvents due to their non-volatility, non-flammability, wide electrochemical stability window, and high ionic conductivity, as well as thermal and chemical stability [4].This work describes, on the one hand, the physicochemical and electrochemical properties of gel polymer electrolytes using ILs as plasticizers. Their applicability has been demonstrated in sodium-metal cells using the P2-Na2/3Ni1/3Mn2/3O2 layered oxide as cathode material. The gel polymer electrolyte based-sodium-metal cell delivers a good specific capacity, with improved cycling stability of 99% and excellent Coulombic efficiency of 99.9% at room temperature, overcoming the electrochemical performance of the counterpart liquid electrolyte based-cell. On the other hand, a single sodium-ion conducting polymer based on bis(trifluoromethanesulfonyl)imide anionic center sodium salt monomer will be introduced. These results open the way for extending t sodium-based batteries’ long-term stability and safety without impoverishing the electrochemical performance.

Optimization of Zr and Mo element on room-temperature fracture toughness and the integrity of oxide film

In this paper, Zr and Mo elements are introduced into the Nb–Si based alloy to improve the room-temperature fracture toughness and oxidation resistance at high-temperature environment. Nb–16Si–24Ti-xZr-yMo (x = 4, 8; y = 3, 6) alloys were prepared by arc melting and their room-temperature fracture toughness and oxidation resistance at 1250 °C is investigated. Results show that the addition of Zr and Mo element promotes the formation of lamellar Nbss-(Nb, X)5Si3 eutectic structure, which is beneficial to the fracture toughness. The room-temperature fracture toughness increases with the content of alloying element. The KQ value of Nb–16Si–24Ti–8Zr–6Mo alloy reaches 14.88 MPa ·m1/2, which is 72% higher than that of the Nb–16Si–24Ti original alloy. The oxidation resistance decreases due to the presence of more Nbss phase and the holes left by Mo oxide. However, the generation of ZrO2 and the volatilization of Mo oxide relieve the internal stress of oxide film and improve the integrity and adhesion of the oxide layer.

Thermally stable quantum Hall effect in a gated ferroelectric-graphene heterostructure

The quantum Hall effect is widely used for the investigation of fundamental phenomena, ranging from topological phases to composite fermions. In particular, the discovery of a room temperature resistance quantum in graphene is significant for compact resistance standards that can operate above cryogenic temperatures. However, this requires large magnetic fields that are accessible only in a few high magnetic field facilities. Here, we report on the quantum Hall effect in graphene encapsulated by the ferroelectric insulator CuInP2S6. Electrostatic gating of the graphene channel enables the Fermi energy to be tuned so that electrons in the localized states of the insulator are in equilibrium with the current-carrying, delocalized states of graphene. Due to the presence of strongly bound states in this hybrid system, a quantum Hall plateau is observed over a wide range of temperatures in relatively modest magnetic fields.

Growth of SrMoO3 thin films by suboxide molecular beam epitaxy

Among ABO3 perovskites, SrMoO3 possesses the lowest electrical resistivity in addition to having high optical transparency in the visible spectrum. This unusual combination of material properties allows it to be a potential replacement for indium tin oxide as a transparent electrode. Thus far, its thin film synthesis has been challenging and limited primarily to pulsed laser deposition and sputtering. Here, we report the growth of SrMoO3 thin films by suboxide molecular beam epitaxy. We demonstrate that optically transparent and conductive SrMoO3 films can be grown by supplying elemental strontium via a conventional effusion cell and thermally evaporating MoO3 pellets as a molybdenum source. The direct supply of a molecular oxygen flux to the MoO3 charge was utilized to prevent reduction to lower oxidation states of the charge to ensure congruent evaporation and, thus, a stable MoO3 molecular flux. The optimal growth conditions were found by varying the Sr to MoO3 flux ratio determined from quartz crystal microbalance measurements and monitoring the growth by reflection high-energy electron diffraction. SrMoO3 thin films with 21 nm thickness were confirmed to be optically transparent with transmission between 75 and 91% throughout the visible spectral range and electrically conducting with a room temperature resistivity of 5.0 × 10−5 Ω cm. This realization of this thin film growth method can be further expanded to the growth of other transition metal perovskites in which cations have extremely low vapor pressure and cannot be evaporated in elemental forms.