Porosification of silicon (Si) by metal induced etching (MIE) process has been studied here to understand the etching mechanism. The etching mechanism has been discussed on the basis of electron transfer from Si to metal ion (Ag+) and metal to H2O2. Role of silver nanoparticles (AgNPs) in the etching process has been investigated by studying the effect of AgNPs coverage on surface porosity. A quantitative analysis of SEM images, done using Image J, shows a direct correlation between AgNPs coverage and surface porosity after the porosification. Density of Si nanowires (NWs) also varies as a function of AgNPs fractional coverage which reasserts the fact that AgNPs governs the porosification process during MIE. The Raman and PL spectrum show the presence of Si NSs in the samples.
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