Rf Plasma Chemical Vapor Deposition Research Articles

Investigation on diamondlike carbon films: Structure, properties and doping effect

Diamondlike carbon films (DLCFs) were prepared from benzene vapor by rf plasma chemical vapor deposition (PCVD) and non-mass-analysed (NMA) low energy ion beam deposition. It was found that the structure of the films is influenced by deposition conditions. The films deposited under various conditions were all amorphous. Their properties are consistent with the structure. The films with a large number of sp 3 CH or CC bonds have high resistivity and wide optical gaps. Aluminium and phosphorus were introduced into the films by sputter and atom transferring from the substrate, respectively. The conduction type is determined by the type of impurity and its activity. Boron implantation was done in the energy range of 5–30 keV. The resistivity decreases with increase of implantation dose.

Effect of Si-Ge buffer layer for low-temperature Si epitaxial growth on Si substrate by rf plasma chemical vapor deposition

Silicon epitaxial growth on the Si-Ge buffer layer at a low substrate temperature by the rf plasma chemical vapor deposition using SiH4 and GeH4 has been investigated. The electron Hall mobility of the homoepitaxial layer grown at 750 °C with a growth rate of 14 Å/sec coincides with that of bulk Si, but for a high growth rate of 33 Å/sec, the mobility was limited to within half the value of bulk Si. However, a small amount of Ge introduced in an initial stage of growth to form the Si-Ge buffer layer improved the crystalline quality of the ensuing Si epitaxial layer with a high growth rate. The electron Hall mobility of the Si layer grown on the Si-Ge buffer layer was a similar value of bulk Si in a low carrier concentration of 6×1015 cm−3. The crystalline quality of the grown Si layers was examined by the combination of Rutherford backscattering spectrometry and transmission electron microscopy.