Radio Electronics Research Articles

Stability and electronic properties of XO (X = Be, Mg, Zn, Cd) biphenylene and graphenylene networks: A first-principles study

The ultrawide bandgap semiconducting property of materials is key to the development of advanced optoelectronic nanodevices with potential applications in flexible and transparent electronics and high-power radio frequency electronics. Here, a series of nonmagnetic porous XO (X = Be, Mg, Zn, and Cd) biphenylene- and graphenylene-type structures are predicted using the first-principles calculations based on the density functional theory (DFT). DFT results proved that XO monolayers exhibit excellent energetic, mechanical, dynamic, and thermal stabilities. The Heyd–Scuseria–Ernzerhof calculations show that the XO-biphenylene and graphenylene structures exhibit narrow, wide, ultra-wide, and insulating semiconducting electronic properties. We then investigated the bandgaps dependent on the thickness of the XO layer and found that the bandgaps decrease uniformly as the number of XO-biphenylene and -graphenylene layers increases. These remarkable electronic properties of XO structures expand the potential of porous oxide materials for the development of practical optoelectronic and thermoelectric nanodevices.

Матрична алгебра В як евклідовий простір

Representation of information by means of hypercomplex numerical systems is used in various problems of science and technology: in classical mechanics, solid body mechanics, electrodynamics, radio electronics, computer animation, and others [1]. Often a hypercomplex system (that is, a system whose elements are considered to be hypercomplex numbers) is understood as any finite-dimensional algebra over a field. An important place among such algebraic structures is occupied by matrix algebras. The impossibility of constructing algebras with division does not at all mean the impossibility of constructing algebras without division, but their properties are close to the first ones (use of defined division). Since each algebra of finite rank can be monomorphically immersed in some complete matrix algebra, this caused, so to speak, an inverse approach to the construction of new algebras. A certain subalgebra stands out from a complete matrix algebra, which is a matrix representation of an algebra of finite rank. It is the implementation of such an approach that makes it possible to endow elements of algebra of finite rank with matrix characteristics, in particular, a canonical representation of algebra elements is constructed through the spectral representation of a matrix, and the algebra itself is endowed with a topological structure through one of the matrix norms. At the same time, an additional condition is often imposed, that it be an algebra over the field of real or complex numbers. The article constructs a real algebra of finite rank, the elements of which are matrices of the second order with the same sum of rows and columns. We endowed it with a norm and a scalar product, demonstrating that it is a Euclidean space. This algebra is a matrix representation of the algebra of hypercomplex numbers, which we called binary in our research [4].

Магнитные наночастицы оксидов железа в медицинской радиоэлектронике

The review analyzes the achievements and problems of medical radio electronics and a number of related fields related to biomedical applications of magnetic iron oxide nanoparticles. It is shown that currently the potential of biomedical technologies in this area are not fully disclosed. Only in some cases it was possible to put into practice the methods of magnetic hyperthermia and controlled directed drug delivery. The practical use of magnetic nanoparticles for diagnostic purposes is much more successful, but there are many problems associated with the biocompatibility of nanoparticles and the inevitable side effects. It is necessary to continue research on optimizing the processes of targeted delivery and controlled release of drugs, hyperthermia techniques using magnetic nanoparticles. It is especially important to develop physical radioelectronic imaging methods for magnetic nanoparticles in a living organism and approaches that effectively solve several diagnostic and therapeutic tasks simultaneously.

Optimal Radio Propagation Modeling and Parametric Tuning Using Optimization Algorithms

Benchmarking different optimization algorithms is tasky, particularly for network-based cellular communication systems. The design and management process of these systems involves many stochastic variables and complex design parameters that demand an unbiased estimation and analysis. Though several optimization algorithms exist for different parametric modeling and tuning, an in-depth evaluation of their functional performance has not been adequately addressed, especially for cellular communication systems. Firstly, in this paper, nine key numerical and global optimization algorithms, comprising Gauss–Newton (GN), gradient descent (GD), Genetic Algorithm (GA), Levenberg–Marguardt (LM), Quasi-Newton (QN), Trust-Region–Dog-Leg (TR), pattern search (PAS), Simulated Annealing (SA), and particle swam (PS), have been benchmarked against measured data. The experimental data were taken from different radio signal propagation terrains around four eNodeB cells. In order to assist the radio frequency (RF) engineer in selecting the most suitable optimization method for the parametric model tuning, three-fold benchmarking criteria comprising the Accuracy Profile Benchmark (APB), Function Evaluation Benchmark (FEB), and Execution Speed Benchmark (ESB) were employed. The APB and FEB were quantitatively compared against the measured data for fair benchmarking. By leveraging the APB performance criteria, the QN achieved the best results with the preferred values of 98.34, 97.31, 97.44, and 96.65% in locations 1–4. The GD attained the worst performance with the lowest APE values of 98.25, 95.45, 96.10, and 95.70 in the tested locations. In terms of objective function values and their evaluation count, the QN algorithm shows the fewest function counts of 44, 44, 56, and 44, and the lowest objective values of 80.85, 37.77, 54.69, and 41.24, thus attaining the best optimization algorithm results across the study locations. The worst performance was attained by the GD with objective values of 86.45, 39.58, 76.66, and 54.27, respectively. Though the objective values achieved with global optimization methods, PAS, GA, PS, and SA, are relatively small compared to the QN, their function evaluation counts are high. The PAS, GA, PS, and SA recorded 1367, 2550, 3450, and 2818 function evaluation counts, which are relatively high. Overall, the QN algorithm achieves the best optimization, and it can serve as a reference for RF engineers in selecting suitable optimization methods for propagation modeling and parametric tuning.

Authentic Assessment in RF Engineering Through Simulation-Based, Online Exams [Educator’s Corner

Authentic Assessment in RF Engineering Through Simulation-Based, Online Exams [Educator’s Corner

Performance calculation for a MEMS switch with «floating» electrode

Switches fabricated using MEMS technology are considered as a promising element base of radio electronics. The main characteristic of a MEMS switch is the ratio of capacitances in the closed and open states. For conventional devices, this ratio is of several units, but it can be significantly increased by implementing original design solutions. The work is devoted to the switch, which is a combination of capacitive and resistive devices. Its working characteristics are considered depending on the substrate properties and contact resistance. The switch provides a capacitance ratio of 27.7 and 46.1 at sapphire and borosilicate glass substrates, while high-resistivity silicon does not allow the value above 7.4. Isolation and insertion loss are of 14.7-19.4 and 0.8-1.1 dB in the frequency range of 4-10 GHz on a sapphire wafer. Acceptable S-parameters are achieved when the contact resistance is not higher than 1 Ohm

To the memory of Maksim I. Balakin

Maksim Igorevich Balakin, the head of the Department of Radio Electronics and Telecommunications at the Yuri Gagarin State Technical University of Saratov, passed away on September 17, 2023.

Personalism, personology, personalization, personalized education: On the terms and concepts

The article highlights the history of the emergence and development of personalism in world science. We analyze modern terms and propose concepts, related to personalized education. The article reviews the works of famous scientists and philosophers in Russia and abroad (F. Schleiermacher, F. Aquinsky, E. Kant, E. Munier, etc.) and considers the issues of personality theory (theory of needs) in the works of G. A. Murray. We also present the views of leading Russian scientists – representatives of psychological science – on the issue under study (N. A. Berdyaev, L. M. Lopatin, etc.), identify and compare the definitions of the personalization concept, found in different fields of science (A. G. Asmolov, D. A. Leontiev, A. B. Orlov, V. A. Petrovsky, E. B. Starovoitenko), clarifying some modern definitions of the personalized education concept. The article determines the features of the personalized education concept (D. S. Ermakov, P. N. Kirillov, N. I. Koryakina) and notes the differences in the understanding and application of the terms “personalized learning” and “personalized approach to learning”. The personalized model of education in relation to secondary and higher education is characterized by the example of a higher school (Tyumen State University; a joint project of NUST “MISIS”, Tomsk University of Control Systems and Radio Electronics, MPSU).

The application of temporal gating in the measurement of response amplitude operators

Scale model testing of wave energy converters (WEC) in wave flumes and basins is essential for full scale development. One of the parameters commonly measured is the response amplitude operator (RAO), which represents the response of the WEC to wave excitation. These are typically measured at discrete frequencies using regular waves. This approach can be slow, depending on the fidelity and frequency resolution. An alternative is to use a broadband wave source, however reflections from walls can significantly contaminate the frequency response measurement. In this paper, a rapid method for measuring the RAO is presented using a chirp signal to generate waves in the frequency range of interest to measure the transfer function, and a temporal gating technique (commonly used in experimental acoustics and RF engineering) to remove reflections. The technique will be demonstrated on numerical data, as well as two scale experiments.

У истоков отечественной радиоэлектроники

The first tube communication system “Blokada-1”designed for The Naval Forces of Workers’ and Peasants’ Red Fleet (MS RKKF) was among the first domestic radio-electronic systems. The scientifically grounded concept for its construction and implementation was developed by the first chairman of the Communications Section of the MS RKKF Science and Technology Committee, a professor Imant Georgievich Freiman, a head (1917–1929) of the first national department of radio engineering in Electrotechnical Institute, who continued the work A. S. Popov in all scientific and social areas. Research and teaching activities of I. G. Freiman, including active experimental work, gives grounds for determining his role in the history of radio engineering and radio electronics as the founder of the scientific and engineering school of radio engineering in Russia.

Evaluation of the Transmission Range of Videoinformation of Various Quality when Monitoring Emergency Situations from an Unmanned Aerial Vehicle

The purpose of research The aim of the study is to estimate the maximum transmission range of video information of various quality from an unmanned aerial vehicle to predict its capabilities when monitoring an emergency situation. Methods. Research methods are based on the concepts of the theory of radio electronics, the theory of diagnostics and prognostics of the technical condition of unmanned aerial vehicles. The methods of multicriteria analysis, parametric and structural synthesis were used. The principles of transmitting video information from unmanned aerial vehicles used to monitor emergency situations are analyzed. A critical assessment of the maximum transmission range of video information from unmanned aerial vehicles during emergency monitoring has been made. Results. Graphs of the dependence of the energy reserve in the radio communication line between the unmanned aerial vehicle and the ground control system have been obtained, allowing to estimate the maximum values of the transmission range of video information of various quality in the 2.4 and 5.8 GHz bands when monitoring emergencies. The maximum line-of-sight range between the UAV and the UAV slightly depends on the lifting height of the antenna of the mobile UAV and at the lifting height of the UAV from 100 to 500 m is from 40 to 85 km. The maximum range of HD quality video transmission with the FM-4 UAV using Turbo 7/8 turbocoding in the 2.4 and 5.8 GHz bands is 3 and 7 km, respectively, and when transmitting FHD quality video information with the CAM-16 UAV using Turbo 7/8 turbocoding in the 2.4 and 5.8 GHz bands is 1.4 and 3.3 km. Conclusion. The development of a method for determining the maximum transmission distance of video and command-telemetry information allows for a more accurate assessment of the energy reserve in the radio communication line with an unmanned aerial vehicle. Unmanned aerial vehicles for direction finding and detection of rescue beacons of victims during search and rescue operations should be considered as promising areas of research in the field of the use of unmanned aerial vehicles in emergency situations.

Crystal Structure Analysis of Graphene Oxide based on Bamboo “Betung” Synthesized By Modi-Fied Hummer Method

Bamboo is a non-timber forest product with a very large population in Indonesia. One of them is bamboo betung which can be found from the lowlands to the highlands but has not been used properly. Therefore, research was conducted to utilize bamboo betung to benefit the society. In this study, the synthesis of graphene oxide (GO) from bamboo betung stems will be carried out. The purpose of GO synthesis to further observe the crystal structure and crystal size of GO itself because it can be applied in various fields such as wave absorbers, radio frequency electronics, data display panels, and photovoltaic cells. GO synthesis was carried out using the Modified Hummers Method. The sintering temperatures used in this study were 300oC, 350oC, 400oC and 4500C. GO characterization was carried out using XRD and FTIR to reveal the system of crystal, crystal structure, and size, in addition functional groups, and phases of graphene oxide. GO has an average crystal size of 23.30165 nm as the largest average crystal size. GO layer is formed due to the bond between Carbon (C), Hydrogen (H) and Oxygen (O). GO Layer can be typed at any temperature variations carried out..

Characteristics, application and development trend of the third-generation semiconductor

Various devices made of the third-generation semiconductor have been gradually applied to various fields with the rapid development of the third-generation semiconductor materials equipment, manufacturing technology, and device physics represented by SiC and GaN. Firstly, the characteristics of the third-generation semiconductors is analyzed in this paper. Compared with the first-generation and second-generation semiconductors, the third-generation semiconductor has a wider band gap width, higher breakdown electric field, higher thermal conductivity, higher electron saturation rate and more expensive price. Then this paper will talk about the application of the third-generation semiconductor. The third-generation semiconductor materials can be mainly used in three fields, which are photoelectric, microwave radio frequency and power electronics. In terms of the photoelectric aspect, this paper takes the blue LED as an example. The blue LED is produced because of the wide band gap of the third-generation semiconductor. In the microwave RF aspect, the paper takes the 5G communication system as an example. Third-generation semiconductors make the high-frequency, high-power devices needed for 5G communications systems. In the power electronics aspect, the paper cites new energy vehicles as an example. Third-generation semiconductor components have a number of features needed for new-energy vehicles. For example, third-generation semiconductors can work at high temperatures. Finally, this paper will introduce the development trend of it. In the future, larger wafers will become mainstream. The third-generation semiconductors will be used in more fields. In addition, the new material systems will gradually mature.

Study of a solid-state transmitting device with a phase correction system, which increases the summing efficiency

Modern radar is a complex system, built on the basis of almost all the achievements of such areas as radio electronics, computer engineering and, of course, microwave devices. One of the most important units of radar, which determines the potential characteristics of the system as a whole, is the transmitting device. Nowadays the task of signal transmission with minimal losses in transmission lines and obtaining required power levels at the output of the transmitting device is relevant. However, existing methods may be insufficient to accomplish this task. In this regard, it may be necessary to improve or develop new systems and methods using the latest advances in microwave and antenna technology, radio and microelectronics, the totality of which will provide devices with these parameters. One such way to increase the stacking efficiency and output power of the transmitting device is to correct the phase of the amplification channels of the transmitting device in the range of operating frequencies. In this article the advantages of using solid-state transmitting devices in radar stations over electric-vacuum amplifying devices are considered. The most common ways of summation the power of microwave devices are described. An algorithm of the phase correction system is presented. The results of an experimental study of the system of gain channel phase correction for a transmitting device with eight gain channels, operating in a relatively wide frequency range, are presented. The proposed amplification channel phase correction system compensates the existing difference in the electrical lengths of the elements of the divider-adder path and amplifying modules in accordance with the algorithm, by means of controlled phase shifters (integrated into each amplifying module). The change in the phases of the microwave signal in (n-1) amplification channels is performed based on the calculated phase corrections obtained on the basis of successive estimates of the total output power of the reference amplifying module with each of the (n - 1) modules, where n is the total number of amplifying modules (channels amplification) in the transmitter. The output power is estimated by the ADC according to the level of the microwave power envelope at the lower, middle and upper frequencies of the operating range, taken from the adder output by a directional coupler. The performance of the phase correction algorithm is ensured by the control device of the amplifying module, the control and monitoring device of the transmitting device, the automatic monitoring and control system from the processing and indication system, as well as the appropriate interface at the operator's workplace. The proposed algorithm corrects the phases of the amplification channels according to the values obtained by the calculation method based on the data measured in the process of phase correction, which made it possible to reduce the maximum required number of phase shifter adjustments to 3 for each of n and each frequency, thereby ensuring a threefold increase in device performance. It was experimentally confirmed that the application of the proposed technical solution increases the efficiency of power summation of the considered transmitter from 70% to 94% - 99% (excluding active losses in the divider-adder and RMSD of the output powers of the amplifying modules) and an increase in the output power of the transmitter by 30% was achieved. The obtained results can be used to improve the algorithmic-software support of developed or modernized transmitting devices of radar stations.

Профессиональные компетенции морских радиоспециалистов в области глобальной морской службы спасения при бедствиях

The article discusses the peculiarities of the professional competencies of Marine Radio specialists in the field of the Global Maritime Distress and Safety System (GMDSS), which is distinguished by a high degree of automation of the transmission and reception of information for search and rescue operations with minimal time. This applies to operators and senior operators of the GMDSB facility, operators of a limited area of the GMDSS, operator of the GMDSS, first and second class radio electronics of the GMDSS, the main professional characteristics of which are summarized in the professional standard “Operator of the Global Maritime Distress and Safety System (ship, coastal).” The listed specialists carry out radio communication and information exchange between coastal and ship stations in the GMDSS in order to ensure uninterrupted communication in the event of a disaster, safety and urgency between ships and coastal services for the safety of navigation and the protection of human life at sea. It is emphasized that they must have higher or secondary vocational education. For each position, generalized labor functions are systematized, which are destructured into labor functions, labor actions, necessary knowledge and skills. It was concluded that the professional competencies of the marine radio specialists of the GMSSB are widely in demand, both on ships and on the shore, which is especially important given the development of the Arctic and the Northern Sea Route, as the main water route of the hard-to-reach northern regions. At the same time, the necessary level of professional training of specialists providing the Global Maritime Distress and Safety System in a disaster for the safety of navigation is decisive.

AlN/AlGaN/AlN quantum well channel HEMTs

We present a compositional dependence study of electrical characteristics of AlxGa1−xN quantum well channel-based AlN/AlGaN/AlN high electron mobility transistors (HEMTs) with x=0.25,0.44, and 0.58. This ultra-wide bandgap heterostructure is a candidate for next-generation radio frequency and power electronics. The use of selectively regrown n-type GaN Ohmic contacts results in contact resistance that increases as the Al content of the channel increases. The DC HEMT device characteristics reveal that the maximum drain current densities progressively reduce from 280 to 30 to 1.7 mA/mm for x=0.25,0.44, and 0.58, respectively. This is accompanied by a simultaneous decrease (in magnitude) in threshold voltage from −5.2 to −4.9 to −2.4 V for the three HEMTs. This systematic experimental study of the effects of Al composition x on the transistor characteristics provides valuable insights for engineering AlGaN channel HEMTs on AlN for extreme electronics at high voltages and high temperatures.

Polarization-induced 2D electron gases in N-polar AlGaN/AlN heterostructures on single-crystal AlN substrates

Polarization-induced carriers play an important role in achieving high electrical conductivity in ultrawide bandgap semiconductor AlGaN, which is essential for various applications ranging from radio frequency and power electronics to deep UV photonics. Despite significant scientific and technological interest, studies on polarization-induced carriers in N-polar AlGaN are rare. We report the observation and properties of polarization-induced two-dimensional electron gases (2DEGs) in N-polar AlGaN/AlN heterostructures on single-crystal AlN substrates by systematically varying the Al content in the 8 nm top layers from x = 0 to x = 0.6, spanning energy bandgaps from 3.56 to 4.77 eV. The 2DEG density drops monotonically with increasing Al content, from 3.8 × 1013/cm2 in the GaN channel, down to no measurable conductivity for x = 0.6. Alloy scattering limits the 2DEG mobility to below 50 cm2/V s for x = 0.49. These results provide valuable insights for designing N-polar AlGaN channel high electron mobility transistors on AlN for extreme electronics at high voltages and high temperatures, and for UV photonic devices.

Организация практико-ориентированного обучения на кафедре «Инженерная графика» РТУ МИРЭА

The article discusses the organization of practice-oriented learning at the Department of Engineering Graphics of the RTU MIREA, the essence of which is the development of not only design documentation, but also the production of a prototype device for which design documentation has been made. Geoinformatics students create 3D models of terrain objects: buildings, terrain and vegetation based on photo and video data from drones. The course project serves as the basis for a deeper study of geometric and graphic disciplines in the form of competitive works, scientific reports and publications, or can serve as the basis for the final qualification work.
 As part of the course work, students of the Institute of Radio Electronics and Informatics perform a multi-level study of an electronic device - a sensor using "smart home" technology. Not only a significant amount of design documentation is developed with the help of circuitry and design CAD: diagrams, printed circuit boards with tracing, assembly drawings, specifications and other text documents, but also a working prototype of the sensor is made.
 As part of the course work, chemists-technologists design a workshop for large- and medium-tonnage chemical production and develop a complete set of design documentation for one of the main apparatuses of this workshop. Based on the created 3D models, students print a model of the apparatus on a 3D printer.
 As part of the "Fundamentals of Design" course, some students develop design documentation and make one of the two printed circuit boards of a dog robot based on it. Another part of the students creates 3D models of robot parts and prints them on a 3D printer. Both groups jointly assemble and program a robot dog.

New stable ultrawide bandgap As2O3 semiconductor materials

Ultrawide band gap materials have numerous potential applications in deep ultraviolet optoelectronics, as well as next-generation high-power and radio frequency electronics. Through the first-principles calculations based on density functional theory calculations, we demonstrate that the As2O3 bulk and monolayer structures have excellent energetic, mechanical, and thermal stabilities. The bulk and monolayer of As2O3 come in two distinct structures, namely st1-As2O3, and st2-As2O3. We show that the st1-As2O3 and st2-As2O3 monolayer and bilayer could be mechanically exfoliated from their bulk material and found that the cleavage energy values are significantly lower than those reported for similarly layered materials. By performing Perdew–Burke–Ernzerhof (PBE) and Heyd–Scuseria–Ernzerhof (HSE06) band structure calculations, we found that the bulk and monolayers of As2O3 structures exhibit wide (PBE) and ultra-wide (HSE06) indirect band gaps. We further evaluate the As2O3 layered thickness-dependent band gaps and found that band gap decreases uniformly as the number of st1-As2O3 and st2-As2O3 layers increases. Our findings demonstrate the potential of the As2O3 structures for the future design of ultra-wide band gap semiconductor electronic devices.

QUALITY MANAGEMENT OF QUARTZ RESONATORS

The formation of various devices of radio electronics and communication technology in general is associated with an increase in its reliability, the stability of the generated frequencies, and the selectivity of the receiving equipment. The problem of increasing the reliability of communication has been partially solved with the help of quartz resonators, which are widely used in radio circuits. The use of quartz resonators in electric generators allows to guarantee high frequency stability without complicating the circuit. The world trend in the development of modern electrical equipment is associated with miniaturization, quartz resonators in their dimensions are decreasing every year. At the same time, the requirements for reliability characteristics remain high. The purpose of this work is to evaluate the possibility of using quartz resonators presented in a miniature ceramic package with dimensions of 2.5×2.0×0.6 mm, in conditions with increased requirements for ambient temperature, as well as to select the most optimal requirements for thermal training mode, which is the basic technological operation for stabilizing the vibration frequency. Testing quartz resonators for reliability and methods of statistical modeling in radio engineering. Requirements for the reliability characteristics of quartz resonators RK588 in miniature ceramic cases 2.5×2.0×0.6 mm in size when exposed to an elevated ambient temperature of +85 C and +125 C. Requirements for frequency when exposed to increased ambient temperature on the type of crystal plate, created on the basis of RF patent No. 27122426 “Method for the manufacture of thin crystal plates and thin crystal elements”. The method of thermal training has been optimized and the aging coefficients have been established.