This research is concerned with characterizing impurity level elements in interface conditions. Impurity elements such as gallium and arsenic, when in ppm to less than 1.0 wt.% concentrations are not easily investigated without exposing the interface as a free surface. With extended X-ray absorption fine structure (EXAFS) spectroscopy, one can characterize the impurity level elements as to their local structure in the in situ condition. Samples of alternating layers of AlGa and AlAs were made using a molecular beam epitaxy system where gallium and arsenic layers were half monolayer thickness. The gallium in the AlGa samples was characterized to be in solution in the aluminum. The arsenic was well ordered with a near neighbor AlAs structure. The impurity interfaces were identified to be locally diffuse. The EXAFS results were complemented by Auger electron spectroscopy analysis.