Circuit Response Research Articles

Frequency experimental identification approach for single-phase induction motor common-mode parameters

Introduction. The presence of broad-spectrum and high-amplitude electromagnetic interference (EMI) within a single-phase induction motor (SPIM) drive poses a significant threat to both the system and other electronic equipment. High-frequency (HF) models of electrical motors play a critical role in overcoming these challenges, as they are essential for characterizing electromagnetic compatibility (EMC) in drives and designing effective EMI filters. The novelty of this study proposes an enhanced HF motor model based on transfer functions (TFs) to accurately represent the motor’s behavior at HFs for frequency-domain analyses in the range of 100 Hz to 30 MHz. Purpose. The equivalent HF model for a SPIM is discussed in this paper. The suggested equivalent circuit describes a motor’s common-mode (CM) properties. Methodology. HF model was developed by a frequency-domain analysis utilizing an experimental setup and MATLAB software. The motor impedance analysis is based on the measurement of variations in motor characteristics as a function of frequency in the CM setup. Originality. TF has been tuned using an asymptotic identification method of Bode to match the behavior of the real impedances of the motor parameters as a function of the frequency in the CM configuration. This tuned TFs are then synthesized into a comprehensive wideband EMC equivalent circuit model using the Foster network technique, which can be then simulated in any Spice-based simulator tools. Results. The proposed mathematical model was employed to conduct simulations, and the resulting predictions were validated against experimental data. CM response of the EMC equivalent circuit at low, medium, and HFs were compared between simulations and experimental measurements using Lt-Spice simulator software. Practical value. It is observed that results show satisfactory agreement with the measurements over a large frequency bandwidth [100 Hz–30 MHz], and the equivalent model of SPIM can be cascaded with other electronic and electrical modules to form a complete single-phase electric drive system model for fast analysis and prediction of system level EMI and electromagnetic sensitivity. References 37, table 5, figures 13.

Effect of vibration frequency on tribological characteristics of vibration-assisted micro-nano machining

Experimental findings regarding the influence of vibration frequency on the machining outcomes of vibration-assisted machining (VAM) have been inconsistent. This work aims to address this issue through both experimental and theoretical analyses. The results indicate that the circuit's frequency response is the primary source of these discrepancies. When the vibration frequency is less than half the cutoff frequency, the friction force reaches a minimum while the wear volume peaks. The solution of the heat conduction equation demonstrated that the acoustic softening effect drives the softening mechanism in nanoscale VAM. Molecular dynamics (MD) simulations further elucidate the damage mechanisms during the wear process, showing that high-frequency vibrations contribute to achieving high-precision machining.

A Drosophila computational brain model reveals sensorimotor processing

The recent assembly of the adult Drosophila melanogaster central brain connectome, containing more than 125,000 neurons and 50 million synaptic connections, provides a template for examining sensory processing throughout the brain1,2. Here we create a leaky integrate-and-fire computational model of the entire Drosophila brain, on the basis of neural connectivity and neurotransmitter identity3, to study circuit properties of feeding and grooming behaviours. We show that activation of sugar-sensing or water-sensing gustatory neurons in the computational model accurately predicts neurons that respond to tastes and are required for feeding initiation4. In addition, using the model to activate neurons in the feeding region of the Drosophila brain predicts those that elicit motor neuron firing5—a testable hypothesis that we validate by optogenetic activation and behavioural studies. Activating different classes of gustatory neurons in the model makes accurate predictions of how several taste modalities interact, providing circuit-level insight into aversive and appetitive taste processing. Additionally, we applied this model to mechanosensory circuits and found that computational activation of mechanosensory neurons predicts activation of a small set of neurons comprising the antennal grooming circuit, and accurately describes the circuit response upon activation of different mechanosensory subtypes6–10. Our results demonstrate that modelling brain circuits using only synapse-level connectivity and predicted neurotransmitter identity generates experimentally testable hypotheses and can describe complete sensorimotor transformations.

MemriSim: A theoretical framework for simulating electron transport in oxide memristors

We have developed a theoretical framework MemriSim for simulating the resistive switching behaviors of oxide memristors. MemriSim comprises two major parts, i) structural evolution of oxygen vacancies during conductive filament formation/rupture by kinetic Monte Carlo (kMC) algorithm, and ii) transport calculations based on the scenario of electron tunneling and thermionic emission with the kMC derived structures. As prototype probes, we have computed the current-voltage (I-V) curves of HfO2 and TaOx based memristors and compared the results with experimental measurements, which show perfect agreement. By tuning the physical parameters, MemriSim can describe resistive switching devices with different oxide layers and metal electrodes. In addition, the pulse transient current can also be simulated by considering the transient response of RLC circuit. The developed framework not only provides a general approach for understanding the fundamental mechanism of resistive switching in oxides, but also opens up new opportunities for designing and optimizing memristor-based architectures for nonvolatile memory, logic-in-memory and neuromorphic computing.Program summaryProgram Title: MemriSim.CPC Library link to program files: https://doi.org/10.17632/8gbbgf8z49.1Licensing provisions: GPLv2.Programming language: C++.Supplementary material: Supplementary material is available.Nature of problem: A general framework for simulating the resistive switching properties of oxide-based memristors; generate the structure of oxide layer during filament formation/rupture; calculate the I-V curves of memristive device; simulate the pulse transient current; predict the resistive switching performance of new devices.Solution method: The framework uses kMC algorithm for structural evolution, the electric field inside oxide layer is computed by the Poisson's equation, and the transport calculation is based on electron tunneling and thermionic emission.

Internal Short Circuit and Dynamic Response of Large-Format Prismatic Lithium-Ion Battery Under Mechanical Abuse

Abstract Prismatic lithium-ion batteries (LIBs) are becoming the most prevalent battery type in electric vehicles, and their mechanical safety is garnering increased attention. Understanding the mechanical response and internal short circuit (ISC) of prismatic LIBs during dynamic impact is important for enhancing the safety and reliability of electric vehicles. Thanks to the pioneer's works on the cylindrical and pouch LIB, prismatic LIB can draw on relevant experimental and numerical modeling methods. However, there is still a lack of research on the dynamic effects of prismatic LIB in various loading directions. To address this disparity, the current research utilizes quasi-static and dynamic impact experiments on prismatic LIBs as a foundation. First, the mechanical response of a sizable prismatic LIB under quasi-static conditions and the dynamic effects are examined when subjected to mechanical abuse from various loading directions. Second, an anisotropic finite element model that considers dynamic strain rates are developed, enabling it to accurately represent the mechanical response to both quasi-static and dynamic impact loads. At last, we performed an analysis of ISC occurring under dynamic loading conditions combining the experimental and simulated results. The experimental results as well as the established model can provide reference for the safe design, application, and analysis of prismatic LIBs.

Enhancing voltage regulation in high-speed digital circuits: A simulation-based analysis of the modified Ohm's law

Voltage droop is a significant challenge in high-speed digital circuits, impacting the reliability and performance of electronic systems. This paper introduces a novel approach based on a Modified Ohm's Law to address this issue. By incorporating nonlinear resistance effects, the Modified Ohm's Law provides a more accurate representation of circuit behavior, particularly under dynamic conditions. Through a rigorous simulation framework, the behavior of power supply models under varying load conditions is analyzed. The paper systematically examines circuit responses, load variations, and power supply dynamics, integrating both Standard and Modified Ohm's Law to compare their effectiveness in voltage regulation. The simulation results indicate that the Modified Ohm's Law provides a more accurate prediction of voltage behavior, particularly under rapid load changes, leading to significant improvements in voltage stability. The applied parameter sweep analyses reveal that adjusting the time constant of the power supply within the Modified Ohm's Law framework yields superior voltage regulation compared to traditional methods. Additionally, the analysis of frequency and amplitude variations demonstrates the robustness of the Modified Ohm's Law in maintaining voltage stability across different operational scenarios. This approach effectively addresses the nonlinearities in resistance, reducing voltage droop and enhancing the reliability of high-speed digital circuits. The findings demonstrate the potential of the Modified Ohm's Law in practical applications, suggesting further research and real-world experimentation to fully explore its benefits and implementation strategies. This work contributes to the advancement of voltage regulation techniques, offering a robust solution to the persistent problem of voltage droop in modern electronic systems.

Improved efficacy behavioral modeling of microwave circuits through dimensionality reduction and fast global sensitivity analysis

Behavioral models have garnered significant interest in the realm of high-frequency electronics. Their primary function is to substitute costly computational tools, notably electromagnetic (EM) analysis, for repetitive evaluations of the structure under consideration. These evaluations are often necessary for tasks like parameter tuning, statistical analysis, or multi-criterial design. However, constructing reliable surrogate models faces several challenges, including the nonlinearity of circuit characteristics and the vast size of the parameter space, encompassing both dimensionality and design variable ranges. Additionally, ensuring the validity of the model across broad geometry/material parameter and frequency ranges is crucial for its utility in design. The purpose of this paper is to introduce an innovative approach to cost-effective and dependable behavioral modeling of microwave passives. Central to our method is a fast global sensitivity analysis (FGSA) procedure, which is devised to identify correlations between design parameters and quantify their impacts on circuit characteristics. The most significant directions identified through FGSA are utilized to establish a reduced-dimensionality domain. Within this domain, the model may be constructed using a limited amount of data samples while capturing a significant portion of the circuit response variability, rendering it suitable for design purposes. The outstanding predictive capability of the proposed model, its superiority over traditional techniques, and its readiness for design applications are demonstrated through the analysis of three microstrip circuits of diverse characteristics.

Preclinical and clinical evaluation through serial colonoscopic evaluation of neratinib-induced diarrhea in HER2-positive breast cancer-A pilot study.

The irreversible pan-HER tyrosine kinase inhibitor neratinib is approved for patients with HER2-positive, early-stage and metastatic breast cancer (BC). Neratinib-associated diarrhea is the most common reason for early discontinuation. Preclinical studies identified mechanisms of neratinib-induced diarrhea and rationale for prophylactic and preventive measures. We studied effects of neratinib on rat intestines and conducted a phase 2 study of colon pathogenesis in patients with HER2-positive BC treated with neratinib (NCT04366713). Colon samples from female albino Wistar rats receiving neratinib or vehicle were examined for histopathological changes. Patients with HER2-positive BC received neratinib 240 mg once daily for up to 1 year. Colonoscopy biopsies were collected at baseline and at Day 28 to identify changes consistent with rat pathologies. Rat colons were markedly altered in appearance, with similar short circuit currents (Isc) and responses to carbachol and forskolin. Mucosal barrier loss and/or significant increase in secretory propensity in neratinib- versus control-treated animals were not seen. Two of four endpoint-evaluable patients presented with mild pathological changes, largely comparable with the rat model. Preclinical evidence supports an inflammatory component of neratinib-induced diarrhea without mucosal barrier function loss. Colonoscopy findings in patients with BC indicate mild or no pathological changes in the colon due to neratinib treatment.

GaAs-on-insulator based vertical heterojunction tunnel FET: proposal and analysis for VLSI circuit applications

This work analyses the Gallium Arsenide (GaAs)-on-insulator based vertical heterojunction tunnel FET with Gallium Antimonide (GaSb) as source material and GaAs as channel/drain material (GaSb/GaAs VTFET) to enhance the performance of the device and is compared with the Silicon-based VTFET. Silvaco Atlas TCAD tool is employed to perform numerical calculations. Tentative fabrication process flow of GaSb/GaAs VTFET is presented. GaSb is a low bandgap material that enhances the tunneling of charge carriers at source-channel heterojunction. GaSb/GaAs VTFET device outperforms Si-based VTFET in terms of electrical performance metrics such as ON-state current (ION), and ION/IOFF increases by a factor of 11 and 270 respectively; whereas OFF-state current (IOFF), subthreshold swing (SS), threshold voltage (VT) and drain-induced barrier lowering (DIBL) reduce by 95.98%, 39.36%, 17.14% and 29.17% respectively. Further, analog/RF and linearity/distortion performance analysis is carried out. GaSb/GaAs VTFET has improved analog/RF performances in terms of cut-off frequency (fT), gain-bandwidth product (GBP), transit time (τ), device efficiency (DE), transconductance frequency product (TFP) and suppressed distortions in compare to Si-based VTFET. Finally, GaSb/GaAs VTFET is evaluated for process variations and designing digital inverter and common source amplifier circuits. The Look-up-table (LUT) based Verilog-A model within the CADENCE tool has been employed to scrutinize the transient responses of inverter and common source amplifier circuits. Unity gain frequency and 3-dB bandwidth obtained for GaSb/GaAs VTFET amplifier are 15 GHz and 5.97 GHz. Therefore, this work presents GaSb/GaAs VTFET’s strong candidature for analog and digital VLSI circuit designing.

Tuning the Response of Synthetic Mechanogenetic Gene Circuits Using Mutations in TRPV4.

Conventional gene therapy approaches for drug delivery generally rely on constitutive expression of the transgene and thus lack precise control over the timing and magnitude of delivery. Synthetic gene circuits with promoters that are responsive to user-defined stimuli can provide a molecular switch that can be utilized by cells to control drug production. Our laboratory has previously developed a mechanogenetic gene circuit that can deliver biological drugs, such as interleukin-1 receptor antagonist (IL-1Ra), on-demand through the activation of Transient receptor potential family, vanilloid 4 (TRPV4), a mechanosensory ion channel that has been shown to be activated transiently in response to physical stimuli such as physiological mechanical loading or hypo-osmotic stimuli. The goal of this study was to use mutations in TRPV4 to further tune the response of this mechanogenetic gene circuit. Human iPSC-derived chondrocytes harboring targeted gain-of-function mutations of TRPV4 were chondrogenically differentiated. Both mutants-V620I and T89I-showed greater total IL-1Ra production compared with wild type following TRPV4 agonist treatment, as well as mechanical or osmotic loading, but with altered temporal dynamics. Gene circuit output was dependent on the degree of TRPV4 activation secondary to GSK101 concentration or strain magnitude during loading. V620I constructs secreted more IL-1Ra compared with T89I across all experimental conditions, indicating that two mutations that cause similar functional changes to TRPV4 can result in distinct circuit activation profiles that differ from wild-type cells. In summary, we successfully demonstrate proof-of-concept that point mutations in TRPV4 that alter channel function can be used to tune the therapeutic output of mechanogenetic gene circuits.

Physics-informed neural network for velocity prediction in electromagnetic launching manufacturing

Electromagnetic launching manufacturing (EMLM) is a high-speed material processing technique powered by pulsed current. The hammer velocity is a key indicator in EMLM, but it is hard to obtain. A viable approach is to use the circuit response current to help in measuring the hammer velocity, but the different curve patterns and the weak interactions between the parameters are major hindrances. In this paper, response current information was used to develop a physics-informed neural network to indirectly predict the hammer velocity. With the experimental dataset, the proposed model had the lowest root mean squared error (0.95) compared with the traditional models (1.62 from Seq2Seq, 1.98 from LSTM, and 2.18 from Attention). This improvement was achieved through the proposed physics-informed neural network architecture. The proposed loss function incorporated knowledge from physics which enabled the model to obtain implicit physical data in the EMLM process, thus enhancing its generalization ability. A fast convergence of the training process was promoted by the developed 2-stage strategy. The introduced attention mechanism added a global perspective that improved the prediction accuracy of the peak velocities. Consequently, our model achieved state-of-the-art predictions of velocities in real-world industrial EMLM systems.

Highly controlled multiplex electrospinning

Applications of electrospinning (ES) range from fabrication of biomedical devices and tissue regeneration scaffolds to light manipulation and energy conversion, and even to deposition of materials that act as growth platforms for nanoscale catalysis. One major limitation to wide adoption of ES is stochastic fiber deposition resulting from the chaotic motion of the polymer stream as is approaches the deposition surface. In the past, fabrication of structures or materials with precisely determined mesoscale morphology has been accomplished through modification of electrode shape, use of multi-dimensional electrodes or pins, deposition onto weaving looms, hand-held electrospinning devices that allow the user to guide deposition, or electric field manipulation by lensing elements or apertures. In this work, we demonstrate an ES system that contains multiple high voltage power supplies that are independently controlled through a control algorithm implemented in LabVIEW. The end result is what we term “multiplex ES” where multiple independently controlled high-voltage signals are combined by the ES fiber to result in unique deposition control. COMSOL Multiphysics® software was used to model the electric field produced in this novel ES system. Using the multi-power supply system, we demonstrate fabrication of woven fiber materials that do not require complex deposition surfaces. Time-varied sinusoidal wave inputs were used to create electrospun torus shapes. The outer diameter of the tori was found, through parametric analysis, to be rather insensitive to frequency used during deposition, while inner diameter was inversely related to frequency, resulting in overall width of the tori increasing with frequency. Multiplex ES has a high-frequency cutoff based on the time response of the high voltage electrical circuit. These time constants were measured and minimized through the addition of parallel resistors that decreased impedance of the system and improved the high-frequency cutoff by up to 63%.

Dynamic encoding of temperature in the central circadian circuit coordinates physiological activities

The circadian clock regulates animal physiological activities. How temperature reorganizes circadian-dependent physiological activities remains elusive. Here, using in-vivo two-photon imaging with the temperature control device, we investigated the response of the Drosophila central circadian circuit to temperature variation and identified that DN1as serves as the most sensitive temperature-sensing neurons. The circadian clock gate DN1a’s diurnal temperature response. Trans-synaptic tracing, connectome analysis, and functional imaging data reveal that DN1as bidirectionally targets two circadian neuronal subsets: activity-related E cells and sleep-promoting DN3s. Specifically, behavioral data demonstrate that the DN1a-E cell circuit modulates the evening locomotion peak in response to cold temperature, while the DN1a-DN3 circuit controls the warm temperature-induced nocturnal sleep reduction. Our findings systematically and comprehensively illustrate how the central circadian circuit dynamically integrates temperature and light signals to effectively coordinate wakefulness and sleep at different times of the day, shedding light on the conserved neural mechanisms underlying temperature-regulated circadian physiology in animals.

Electrical characteristics of the GEC reference cell at low pressure: a two-dimensional PIC/MCC modeling study

The electrical characteristics of the Gaseous Electronics Conference reference cell at low pressures are investigated using a two-dimensional electrostatic implicit particle-in-cell/Monte Carlo collision model in cylindrical coordinates. The coupling between the complex reactor geometry and the external circuit is included via an equivalent capacitance calculated from the electric energy density and the charge conservation equation. The results of this model are compared with experimental measurements and other model calculations and show agreement. The plasma series resonance effect, closely related to electron heating, is observed in this numerical simulation of a strongly asymmetric reactor at low pressures. The plasma kinetics of the capacitively coupled discharge and details of the external circuit response, including electrical waveforms and higher-order harmonics, are discussed at different pressures, which provides important insights for understanding the power coupling mechanisms in capacitively coupled discharges.

Noncontact In Situ Multidiagnostic NMR/Dielectric Spectroscopy.

Introduction of a dielectric material in a nuclear magnetic resonance (NMR) probe head modifies the frequency response of the probe circuit, a phenomenon revealed by detuning of the probe. For NMR spectroscopy, this detuning is corrected for by tuning and matching the probe head prior to the NMR measurement. The magnitude of the probe detuning, "the dielectric shift", provides direct access to the dielectric properties of the sample, enabling NMR spectrometers to simultaneously perform both dielectric and NMR spectroscopy. By measuring sample dielectric permittivity as a function of frequency, dielectric permittivity spectroscopy can be performed using the new methodology. As a proof of concept, this was evaluated on methanol, ethanol, 1-propanol, 1-pentanol, and 1-octanol using a commercial cross-polarization magic angle spinning (CPMAS) NMR probe head. The results accurately match the literature data collected by standard dielectric spectroscopy techniques. Subsequently, the method was also applied to investigate the solvent-surface interactions of water confined in the micropores of an MFI-type, hydrophilic zeolite with a Si/Al ratio of 11.5. In the micropores, water adsorbs to Bro̷nsted acid sites and defect sites, resulting in a drastically decreased dielectric permittivity of the nanoconfined water. Theoretical background for the new methodology is provided using an effective electric circuit model of a CPMAS probe head with a solenoid coil, describing the detuning resulting from the insertion of dielectric samples in the probe head.

A Method of Diagnosing Analog Circuit Soft Faults Using Boruta Features and LightGBM

Modern electronic power systems rely heavily on analog circuits. The accurate detection of analog circuit faults, especially soft faults, is of great significance for the maintenance and inspection of electronic systems. This paper proposes the application of the Boruta feature selection method to the field of the soft fault diagnosis of analog circuits to screen out low-dimensional and efficient feature components from the high-dimensional time-domain statistical features and frequency-domain features of circuit responses. Then, the feature components are used as the input to train the LightGBM classification model, and the Bayesian optimization method is introduced to optimize the model’s hyperparameters. Finally, the trained fault diagnosis model is verified in two typical experimental circuits, and satisfactory accuracy is obtained.

Integration of low-thermal-budget In2O3 NMOS inverter and GaN HEMT for power electronics

Herein, we demonstrated an “interposer”-style integration of In2O3 FET-based gate-driver circuitry wire bonded to an AlGaN/GaN high electron mobility transistor (HEMT) device grown on a GaN-on-Si substrate, and its feasibility for power electronics was discussed. The normally-on AlGaN/GaN HEMT exhibited a threshold voltage of −2.8 V, with a maximum drain current density of 265 mA/mm. The device also showed good off-state performance, such as a high ON/OFF ratio (Ion/Ioff) of ∼1010 with a breakdown voltage of ∼445 V and an off-state leakage current of ∼10−12 A. The low-temperature processed In2O3 driver circuitry exhibited a high gain of ∼64 and a maximum operating frequency of 2 kHz. The temperature-dependent study of the voltage transfer characteristics (VTC) of In2O3 driver circuitry exhibited stable operation up to 125 °C. An integrated In2O3 driver circuitry with GaN HEMT was demonstrated, marked by a 50 mA/mm drain current for circuit response of one cycle during the ON state. These results pave the way for future monolithic integration of oxide semiconductor-based gate-driver circuitry with power switches for energy-efficient integrated circuits.

DNA Logic Gates Integrated on DNA Substrates in Molecular Computing.

Due to nucleic acid's programmability, it is possible to realize DNA structures with computing functions, and thus a new generation of molecular computers is evolving to solve biological and medical problems. Pioneered by Milan Stojanovic, Boolean DNA logic gates created the foundation for the development of DNA computers. Similar to electronic computers, the field is evolving towards integrating DNA logic gates and circuits by positioning them on substrates to increase circuit density and minimize gate distance and undesired crosstalk. In this minireview, we summarize recent developments in the integration of DNA logic gates into circuits localized on DNA substrates. This approach of all-DNA integrated circuits (DNA ICs) offers the advantages of biocompatibility, increased circuit response, increased circuit density, reduced unit concentration, facilitated circuit isolation, and facilitated cell uptake. DNA ICs can face similar challenges as their equivalent circuits operating in bulk solution (bulk circuits), and new physical challenges inherent in spatial localization. We discuss possible avenues to overcome these obstacles.

Rectifier load modeling and zero voltage switching design of inductive power transfer system with S‐type topology on the secondary side

SummaryRectifier load in inductive power transfer system has nonlinear characteristics. However, the traditional analysis method equates it to a pure resistor, which leads to a certain deviation between the theoretical analysis and the actual circuit. This will reduce the accuracy of the inductive power transfer (IPT) system model and affect the soft switching operation of the inverter. In this paper, the IPT system with S‐type topology on the secondary side is studied. Firstly, the resistance–inductance characteristics of the rectifier load are analyzed by simulation, and then a second‐order circuit response model is established to solve the time‐domain expression of voltage and current. Then, the fundamental component of voltage and current is extracted by Fourier transform to calculate the impedance value of the rectifier load, and the mathematical calculation model of the rectifier load is established. On this basis, the influence of the inductive component of the rectifier load on the input impedance of the IPT system is analyzed. Then, a parameter design method for zero voltage switching is proposed for S‐S and LCC‐S topologies. Finally, an experimental platform of S‐S and LCC‐S IPT system is built. The correctness and effectiveness of the theoretical analysis and the proposed parameter design method are verified by experiments.

Femtosecond electron beam probe of ultrafast electronics

The need for ever-faster information processing requires exceptionally small devices that operate at frequencies approaching the terahertz and petahertz regimes. For the diagnostics of such devices, researchers need a spatiotemporal tool that surpasses the device under test in speed and spatial resolution. Consequently, such a tool cannot be provided by electronics itself. Here we show how ultrafast electron beam probe with terahertz-compressed electron pulses can directly sense local electro-magnetic fields in electronic devices with femtosecond, micrometre and millivolt resolution under normal operation conditions. We analyse the dynamical response of a coplanar waveguide circuit and reveal the impulse response, signal reflections, attenuation and waveguide dispersion directly in the time domain. The demonstrated measurement bandwidth reaches 10 THz and the sensitivity to electric potentials is tens of millivolts or −20 dBm. Femtosecond time resolution and the capability to directly integrate our technique into existing electron-beam inspection devices in semiconductor industry makes our femtosecond electron beam probe a promising tool for research and development of next-generation electronics at unprecedented speed and size.