The electronic structure of epitaxial $\mathrm{LaV}{\mathrm{O}}_{3}$ (00l) thin films have been studied using resonant photoemission spectroscopy (RPES) and x-ray absorption near edge spectroscopy (XANES) measurements. The RPES study confirms the mixing of V $3d$ with O $2p$ states and the V $3d$ character at 6.9 eV and 1.5 eV binding energies, respectively. The resonant behavior of V $3d$ state suggests $3{d}^{n\ensuremath{-}1}$ final state, ascribed with an incoherent structure, and is attributed as a lower Hubbard band. The smaller value of crystal field splitting energy observed in O $K$-edge XANES spectrum and the hopping parameter obtained from simulations reveal a weaker hybridization between ligand O $2p$ and metal V $3d$ orbitals. Combined spectra of occupied and unoccupied states suggest the Mott-Hubbard type insulating nature of the epitaxial $\mathrm{LaV}{\mathrm{O}}_{3}$ thin films at room temperature, different from its bulk counterpart, which is placed intermediate between the charge transfer and Mott-Hubbard regime.