Shunt Resistance Research Articles

Optimizing Cs2CuBiBr6 double halide perovskite for solar applications: the role of electron transport layers in SCAPS-1D simulations.

Perovskite solar cells are commonly employed in photovoltaic systems because of their special characteristics. Perovskite solar cells remain efficient, but lead-based absorbers are dangerous, restricting their manufacture. Therefore, studies in the field of perovskite materials are now focusing on investigating lead-free perovskites. The SCAPS-1D simulator is used to simulate the impact of lead-free double perovskite as the absorber in perovskite solar cells. The research examines how the effectiveness of solar cells is impacted by a hole transport layer (CBTS) and several electron transports layers (WS2, C60, PCBM, and TiO2), using Ni and Al acting as the back and front contacts metal. This work explores the impact of a Cs2CuBiBr6 perovskite as a solar cell absorber. The effectiveness of these device structures depends on defect density, absorber thickness, ETL thickness, and ETL combination. With WS2, C60, PCBM, and TiO2, the device's power conversion efficiency (PCE) is 19.70%, 18.69%, 19.52%, and 19.65%, respectively. This research also highlights the impact of the absorber and HTL thickness. This investigation further included the analysis of the valence band offset (VBO) and conduction band offset (CBO). We also investigated the current density-voltage (J-V), quantum efficiency (QE), series and shunt resistance, capacitance-Mott-Schottky characteristics, and photocarrier generation-recombination rates and effective temperature. This study provides crucial structural design guidelines for a lead-free double perovskite device and highlights solar energy optoelectronic developments.

A comprehensive SCAPS-1D simulation study on the photovoltaic properties and efficiency enhancement of CH3NH3PbCl3 perovskite solar cells

Abstract Recent progress in lead (Pb) halide perovskites has inspired much research into economical solar cells, focusing on critical issues of stability and toxicity. This study investigates the performance of perovskite solar cells (PSCs) by simulating the impact of a methylammonium lead chloride (CH3NH3PbCl3) layer as the absorber material using the SCAPS-1D simulator. The first comprehensive study of this material examines the role and configuration of the Electron Transport Layer (ETL) and Hole Transport Layer (HTL), as well as the absorber layer, on solar cell performance. The ETLs used in the device optimization are ZnO, SnO2, IGZO, and CdS; the HTL is CuO; and the front and back contacts are Au and Ni, respectively. The study highlights CuO as the optimal HTL for CH3NH3PbCl3, delivering power conversion efficiencies (PCEs) of 16.10%, 16.06%, 16.05%, and 14.41% with ZnO, SnO2, IGZO, and CdS as ETLs, respectively. The performance of these device architectures is significantly influenced by factors such as defect density, absorber layer thickness, ETL thickness, and the combination of different ETLs and CuO HTLs. Furthermore, this study elucidates the impact of absorber and HTL thickness on key photovoltaic parameters, such as VOC, JSC, FF, and PCE. Also, we have discussed the VBO, and CBO for different ETLs. Additionally, we examine the effects of series and shunt resistance, operating temperature, quantum efficiency (QE), capacitance-voltage characteristics, generation and recombination rates, and current density-voltage (J-V), analysis of absorption data, and impedance analysis behavior on achieving the highest efficiency of the device. This comprehensive study provides critical insights into designing cost-effective, high-performance PSCs, and advancing the development of next-generation photovoltaic technologies.

Achieving 32.9% efficiency in Pb-Based quantum dot solar cells via SCAPS-1D simulation optimization

Abstract This study presents a comprehensive investigation and in-depth analysis of the optimization of Pb-based quantum dot solar cells (QDSCs), concentrating on the influences of doping concentration, absorber layer thickness, defect density, temperature, and resistive elements. We systematically examined three absorber materials: lead sulfide (PbS), tetrabutylammonium iodide-treated PbS (PbS-TBAI), and lead selenide (PbSe) quantum dots (QDs). Optimal doping concentrations of 1 × 10 17 cm−3 for PbS and 1 × 10 22 cm−3 for both PbS-TBAI and PbSe were identified. Our findings reveal that precise control of these parameters can significantly enhance power conversion efficiency (PCE), achieving values of 24.6%, 28%, and 26.2% for PbS, PbS-TBAI, and PbSe, respectively. Additionally, we investigated the impact of absorber layer thickness on device performance. We discovered that a 1 µm thickness for PbS yields a maximum PCE of 32.9% due to balanced photon absorption and reduced Shockley–Read–Hall recombination. Conversely, PbSe’s performance declined with increased thickness because of its layer-dependent bandgap. We found that lower defect densities ( 1 × 10 14 cm−3) critically improve PCE and fill factor across all materials. The temperature-dependent studies demonstrated that PbS-TBAI exhibits remarkable resilience, maintaining efficiency under thermal stress due to effective surface passivation. Analyses of series and shunt resistances highlighted the importance of minimizing internal resistances to optimize device performance. The proposed device structure comprises a fluorine-doped tin oxide front contact layer, a silver sulfide (Ag2S) electron transport layer, the QD absorber layer (PbS, PbS-TBAI, or PbSe), and copper(I) oxide (Cu2O) hole transport layer. Utilizing cascade band alignment, we achieved a record PCE of 32.9%. This research highlights the significant potential of Pb-based QDSCs for achieving high efficiencies through promising material and structural optimization, positioning them as competitive candidates for next-generation solar technologies. The results provide a valuable understanding of designing high-performance QDSCs, paving the way for their integration into sustainable energy solutions.

Enhancement of Electrical Parameter Extraction from Solar Cells Using a Hybrid Genetic Algorithm with the Levenberg-Marquardt Method

Accurate modeling and simulation of solar photovoltaic (PV) systems are critical for optimizing their performance and efficiency. This requires precise determination of electrical parameters of solar cells, such as photocurrent (Iph), saturation current (I0), series resistance (Rs), shunt resistance (Rsh), and ideality factor (n). Traditional numerical methods for parameter extraction often face limitations in complexity, speed, and assumption dependencies. To address these issues, this study proposes a hybrid method that combines a genetic algorithm with the Levenberg-Marquardt algorithm (GALM) for solar cell parameter extraction. The genetic algorithm provides a robust initial estimate of the parameters, which is then refined by the Levenberg-Marquardt algorithm to achieve high accuracy. The performance of the proposed GALM method is validated using experimental data from a 57-mm silicon solar cell from R.T.C. France. Results indicate that the GALM method achieves one of the lowest RMSE values compared to other optimization techniques, demonstrating its effectiveness in accurately extracting solar cell parameters and closely matching the experimental I-V data. This contributes significantly to optimizing the performance and efficiency of PV systems.

Novel Vertical Shunt Resistor: Integration and Optimization in Power Modules

Novel Vertical Shunt Resistor: Integration and Optimization in Power Modules

Effect of the incorporation of gold nanoparticles on the current‒voltage characteristics of Ag/Si diodes in the dark and under light

The use of nanoparticles in electronic devices has become common practice for controlling and improving device performance. In this research, gold nanoparticles (AuNPs) were introduced into silver‒silicon (Ag/Si) Schottky diodes to investigate their impact on the current voltage (I‒V) behavior in both the dark and light surroundings. Spin coating was used to deposit a film of AuNPs on the Si substrate, followed by thermal evaporation of Ag metal to create the concluding Ag/AuNP/Si diode. Study of the I‒V curves revealed a reduction in the barrier height after the addition of AuNPs in both the dark and illuminated settings. Furthermore, the presence of AuNPs led to a decrease in both the series (Rs) and shunt (Rsh) resistances when the diode was exposed to light, indicating an improvement in the photosensitivity of the Ag/Si structures. This enhancement was attributed to the ability of AuNPs to increase light absorption through local interface plasmon excitations, resulting from the shared oscillation of free electrons on metallic surfaces

Numerical Investigation and Device Architecture Optimization of Sb2Se3 Thin-Film Solar Cells Using SCAPS-1D.

Antimony selenide (Sb2Se3) shows promise for photovoltaics due to its favorable properties and low toxicity. However, current Sb2Se3 solar cells exhibit efficiencies significantly below their theoretical limits, primarily due to interface recombination and non-optimal device architectures. This study presents a comprehensive numerical investigation of Sb2Se3 thin-film solar cells using SCAPS-1D simulation software, focusing on device architecture optimization and interface engineering. We systematically analyzed device configurations (substrate and superstrate), hole-transport layer (HTL) materials (including NiOx, CZTS, Cu2O, CuO, CuI, CuSCN, CZ-TA, and Spiro-OMeTAD), layer thicknesses, carrier densities, and resistance effects. The substrate configuration with molybdenum back contact demonstrated superior performance compared with the superstrate design, primarily due to favorable energy band alignment at the Mo/Sb2Se3 interface. Among the investigated HTL materials, Cu2O exhibited optimal performance with minimal valence-band offset, achieving maximum efficiency at 0.06 μm thickness. Device optimization revealed critical parameters: series resistance should be minimized to 0-5 Ω-cm2 while maintaining shunt resistance above 2000 Ω-cm2. The optimized Mo/Cu2O(0.06 μm)/Sb2Se3/CdS/i-ZnO/ITO/Al structure achieved a remarkable power conversion efficiency (PCE) of 21.68%, representing a significant improvement from 14.23% in conventional cells without HTL. This study provides crucial insights for the practical development of high-efficiency Sb2Se3 solar cells, demonstrating the significant impact of device architecture optimization and interface engineering on overall performance.

Incorporation of Chromium Nanostructures into PVC Interlayer to Improve Electrical Features of Au/n-Si Schottky Diodes

Abstract This work comprehensively examined the effects of polyvinyl chloride (PVC) polymer and polyvinyl chloride-chromium (PVC:Cr) thin layers on the electronic characteristics of Au/n-Si (D0) sample. To achieve this, the configurations Au/PVC/n-Si (D1) and Au/PVC:Cr/n-Si (D2) were created. A detailed description of the PVC:Cr nanocomposite synthesis process was given. The Cr nanoparticles and PVC:Cr nanocomposite were analyzed using energy-dispersive X-ray (EDX) spectroscopy and field emission scanning electron microscopy (FE-SEM) to determine the purity and surface morphology. Following the structural analysis, current-voltage (I-V) measurements were taken at a wide voltage range (±3 V), and several methodologies were applied to obtain and compare the major electronic variables of the created Schottky diodes. Experimental results show that PVC:Cr nanocomposite reduced ideality factor (n), surface states density (Nss), and series resistance (Rs) while increasing barrier height (BH) of the electric potential, shunt resistance (Rsh), and rectification rate (RR). It was found that the D2 sample's RR was 89 times greater than the D0 sample's. Furthermore, the surface state density (Nss) depending on the energy was determined using the n(V) and ΦB0(V) functions. Based on the ln(IR)-VR0.5 profile in the reverse bias region, a Schottky emission (SE) transport mechanism was found to be effective for the D0 structure. On the other hand, the indicates that D1 and D2 structures exhibited the Poole-Frenkel emission (PFE) type.

A 30-nΩ Accuracy Low Power Two-Step Ratiometric Shunt Resistance Measurement System Using a Switching Regulator- Based Current Generator for Shunt- Based Current Sensors

A 30-nΩ Accuracy Low Power Two-Step Ratiometric Shunt Resistance Measurement System Using a Switching Regulator- Based Current Generator for Shunt- Based Current Sensors

Estimation of photovoltaic model parameters using the Rao-1 optimization algorithm

Predicting the performance of photovoltaic (PV) systems in industrial applications has become increasingly important due to the complex and non-linear behavior of PV modules. Accurate performance prediction is essential for optimizing energy production and ensuring system reliability. However, a significant challenge arises from the lack of critical information in manufacturer datasheets, which often do not include all the necessary details for precise PV module modeling. This limitation can hinder accurate analysis and system performance evaluation. Optimization methods are recommended to accurately determine the electrical and physical characteristics of PV cells and modules to address this issue. These methods enable detailed and precise analysis of current-voltage (I-V) and power-voltage (P-V) characteristics across various PV models, improving the overall modeling accuracy. Among these methods, the Rao-1 optimization technique has been selected and evaluated in this paper to solve this issue. It is specifically used to extract the unknown parameters of photovoltaic models, including the photo-generated current (Iph), diode ideality factor (n), series resistance (Rs), reverse saturation current (I0), and shunt resistance (Rsh). The effectiveness of the Rao-1 optimization method has been demonstrated through its successful application in estimating PV parameters across a wide range of datasets, ensuring its reliability and adaptability for various industrial scenarios.

Efficiency enhancement of WSe2/In2S3 solar cell by numerical modeling using SCAPS

Tungsten diselenide (WSe2), a transition metal dichalcogenide (TMDC) compound, is considered a promising material for application in thin film solar cells because of its high carrier transport, tunable band gap, and high absorption coefficient. In this work, solar cell structure comprising FTO/In2S3/WSe2 is modeled using one-dimensional solar cell capacitance simulator (SCAPS-1D) software where wide bandgap widely accessible In2S3 is used as a novel buffer layer instead of toxic CdS buffer layer for WSe2-based solar cell. The effect of thickness, doping concentrations, defect density, radiative recombination coefficient, and the electron and hole capture cross-section are analyzed and optimized. After optimizing the device, the effect of operating temperature, shunt and series resistance and back contact work function are also investigated. At an optimized WSe2 absorber layer thickness of 1.5 µm and acceptor density of 1017 cm−3, efficiency of 22.53%, fill factor of 84.98%, open circuit voltage of 1.096 V, and short circuit current density of 24.18 mA/cm2 was obtained. Additionally, a back surface field (BSF) layer comprising amorphous silicon (a-Si) of thickness 0.05 µm is introduced between the absorber layer and the back contact to lessen carrier recombination at the back surface. Therefore, the efficiency rises from 22.53% to 29.5% with a fill factor of 89.53%, open circuit voltage of 1.26 V, and short circuit current density of 26.23 mA/cm2. The simulation results suggest that WSe2-based thin-film solar cells can be designed and fabricated with high efficiency and cost advantage.

Estimation of photovoltaic model parameters using the Rao-1 optimization algorithm

Predicting the performance of photovoltaic (PV) systems in industrial applications has become increasingly important due to the complex and non-linear behavior of PV modules. Accurate performance prediction is essential for optimizing energy production and ensuring system reliability. However, a significant challenge arises from the lack of critical information in manufacturer datasheets, which often do not include all the necessary details for precise PV module modeling. This limitation can hinder accurate analysis and system performance evaluation. Optimization methods are recommended to accurately determine the electrical and physical characteristics of PV cells and modules to address this issue. These methods enable detailed and precise analysis of current-voltage (I-V) and power-voltage (P-V) characteristics across various PV models, improving the overall modeling accuracy. Among these methods, the Rao-1 optimization technique has been selected and evaluated in this paper to solve this issue. It is specifically used to extract the unknown parameters of photovoltaic models, including the photo-generated current (Iph), diode ideality factor (n), series resistance (Rs), reverse saturation current (I0), and shunt resistance (Rsh). The effectiveness of the Rao-1 optimization method has been demonstrated through its successful application in estimating PV parameters across a wide range of datasets, ensuring its reliability and adaptability for various industrial scenarios.

Numerical optimization of all-inorganic CsSnBr3 perovskite solar cells: the observation of 27% power conversion efficiency

Abstract In this research, we employed SCAPS-1D simulation software to numerically optimize the performance of four CsSnBr3-based perovskite solar cell structures. Specifically, we analyzed the FTO/ZnO/CsSnBr3/rGO/Se, FTO/AlZnO/CsSnBr3/rGO/Se, FTO/LiTiO2/CsSnBr3/rGO/Se, and FTO/WS2/CsSnBr3/rGO/Se configurations. The optimization process focused on adjusting the thicknesses of the electron transport layer, hole transport layer, and perovskite layer, while also evaluating the effects of temperature, series resistance, and shunt resistance on the Jsc, Voc, FF, and PCE. As a result, we achieved PCE of 26.92%, 26.89%, 26.89%, and 26.91% for the FTO/AlZnO, FTO/ZnO, FTO/LiTiO2, and FTO/WS2-based structures, respectively. Furthermore, the PCE obtained for all CsSnBr3-based perovskite solar cell structures outperformed the recently reported ITO/WS2/CsSnBr3/Cu2O/Au perovskite solar cell, which exhibited the highest PCE in the literature, by nearly 5%.

Design and simulation of CsPb.625Zn.375IBr2-based perovskite solar cells with different charge transport layers for efficiency enhancement

In this work, CsPb.625Zn.375IBr2-based perovskite solar cells (PSCs) are numerically simulated and optimized under ideal lighting conditions using the SCAPS-1D simulator. We investigate how various hole transport layers (HTL) including Zn3P2, PTAA, MoS2, MoO3, MEH-PPV, GaAs, CuAlO2, Cu2Te, ZnTe, MoTe2, CMTS, CNTS, CZTS, CZTSe and electron transport layers (ETL) such as CdS, SnS2, ZnSe, PC60BM interact with the devices’ functionality. Following HTL material optimization, a maximum power conversion efficiency (PCE) of 16.59% was observed for the FTO/SnS2/CsPb.625Zn.375IBr2/MoS2/Au structure, with MoS2 proving to be a more economical option. The remainder of the investigation is done following the HTL optimization. We study how the performance of the PSC is affected by varying the materials of the ETL and to improve the PCE of the device, we finally optimized the thickness, charge carrier densities, and defect densities of the absorber, ETL, and HTL. In the end, the optimized arrangement produced a VOC of 0.583 V, a JSC of 43.95 mA/cm2, an FF of 82.17%, and a PCE of 21.05% for the FTO/ZnSe/CsPb.625Zn.375IBr2/MoS2/Au structure. We also examine the effects of temperature, shunt resistance, series resistance, generation rate, recombination rate, current-voltage (JV) curve, and quantum efficiency (QE) properties to learn more about the performance of the optimized device. At 300 K, the optimized device provides the highest thermal stability. Our research shows the promise of CsPb.625Zn.375IBr2-based PSCs and offers insightful information for further development and improvement.

Newton–Cotes quadrature formula, 3/8 rule, and Boole’s rule integration of the Current minus the Short-Circuit Current, to obtain the Co-Content function and photovoltaic device parameters with more precision, in the case of constant percentage noise

In this article, the Newton–Cotes quadrature formula, the 3/8 rule, and the Boole’s rule integration techniques are used to integrate the Current minus the Short-Circuit Current, to obtain a more accurate Co-Content function, and from this one, deduce with more accuracy the photovoltaic device parameters, namely, the Shunt Resistance, the Series Resistance, the Ideality Factor, the Saturation Current, and the Light Current, compared with the usually used trapezoidal integration technique. Less than 5% error (in some cases 1% or smaller) can be obtained on the extracted photovoltaic device parameters, for 31 measured points per volt, or less, in case the percentage noise is <0.05%.

Enhanced performance of CaZrS3-based chalcogenide perovskite solar cells (CPSC): a theoretical study on optimization of hole transport material

Abstract The effective transformation of solar photons into electrical energy using innovative and environmentally friendly materials is a key focus in renewable energy research. In this study, chalcogenide perovskite CaZrS3 is employed as the absorber layer for solar photovoltaic applications, coupled with ZnO as ETL and Cu2O as HTL. A comprehensive theoretical investigation is conducted by utilizing the SCAPS-1D simulator to identify the most efficient photovoltaic device configuration. The performance of the solar device is evaluated by varying different parameters, including HTLs, thickness and defect density in the absorber layer, interface defect densities, CBO and VBO at ETL/PSK and PSK/ETL interfaces, series and shunt resistances, and the back contacts work function. The optimized solar device achieves a PCE of 21.25% with outstanding PV properties. This research highlights the potential of CaZrS3 as a chalcogenide absorber material for photovoltaic applications, demonstrating it as an effective and eco-friendly alternative.

Survival comparison in adults with congenital systemic to pulmonary shunt and borderline elevated pulmonary vascular resistance versus Eisenmenger syndrome

Pulmonary arterial hypertension (PAH) associated with congenital heart disease (PAH-CHD) is a consequence of unrepaired large systemic-to-pulmonary shunts. The long-term data of adult patients who have PAH-CHD with elevated pulmonary vascular resistance (PVR) are limited. We aimed to investigate the survival of adults who had PAH-CHD with predominantly left-to-right (L-R) shunts with (1) borderline-to-high PVR and (2) treat-and-repair compared with those with Eisenmenger syndrome (ES). From 1995 to 2021, 99 adults with ES (age 34.1 ± 11.2 years) and 118 adults with PAH-CHD with predominantly L-R shunts (age 39.1 ± 13.7 years) were eligible. The PVR in the ES group was 21.0 ± 13.1 WU. Most ES patients (97%) received pulmonary vasodilator therapy. Among the 118 patients with PAH-CHD with predominantly L-R shunts, the baseline PVR was 7.6 ± 4.6 WU, and 78 patients (66.1%) had borderline to high PVR (≥ 5 WU). In the group, 105 patients (88.9%) underwent repair; 84 had defect closure, and 21 had fenestrated closure. Treat-and-repair was used to treat 53 patients with a preoperative final PVR of 3.58 ± 2.63 WU. No early postoperative deaths were reported. At a median follow-up time of 5.4 years (range 0.1–23.6 years), the 10- and 15-year survival rates of adults with borderline PVR were 82.3% and 82.3%, respectively, which were not inferior to the rates for patients with ES, which were 77.8% and 71.2%, respectively (p = 0.41). The survival rate of patients who underwent treat-and-repair was slightly better than that of patients who underwent ES, although the difference was not statistically significant (p = 0.19). Independent mortality risk factors were functional class III-IV at initial presentation (hazard ratio 5.7, 95% CI 1.2–26.6; p = 0.02) and oxygen saturation < 94% at the most recent visit (hazard ratio 9.4, 95% CI 2.1–42.9; p = 0.004).Trial registration: TCTR20200420004.

Nanoscale thermal effects induce the evolution of electric transport of Nb bridges

Abstract We report the evolution of electric transport of Nb bridges based on nanoscale thermal effects created by nanolaser direct writing (NLDW) on Nb films. The laser–Nb-film interaction was investigated experimentally and by simulation. We demonstrate laser parameters such as irradiation power and interaction time to manipulate the electric transport of Nb bridges, such as the critical current and transition temperature, via simulation, which align with the electron probe microanalyzer results. Based on the optimized laser parameters, we realize the continual changes in current–voltage characteristics via increasing irradiation power. Furthermore, Nb bridges after laser irradiation show the oscillations of the critical current when we apply the coil current under a magnetic field that is perpendicular to the Nb bridges, which is similar to the Fraunhofer pattern in a Josephson junction under a magnetic field. In this case, NLDW shows the potential to manipulate electrical performances, which could be used to trim tri-layer junctions, tune shunt resistors, adjust critical currents or even induce a Josephson junction in situ by further shrinking of the laser spot.

Enhancing performance of antimony selenide solar cell with different back surface field configurations

Abstract This study focuses on optimization of solar cells using antimony selenide (Sb2Se3) as absorber layer. A novel solar cell structure, designed and simulated with configuration ZnO/i-ZnO/Sb2Se3/NiO or SnS, demonstrates a notable efficiency improvement. The performance of this solar cell was rigorously evaluated using the SCAPS simulation tool. Key structural parameters were optimized as follows: ZnO at 30 nm, i-ZnO at 20 nm, Sb2Se3 as active layer at 100 nm, and NiO at 20 nm. NiO &amp; SnS, utilized as a back surface field (BSF), effectively minimizes recombination. Various parameters were analyzed, including the band diagram, thickness, bandgap, doping concentration, effect of concentration on electric field, recombination and generation rates, temperature effects, and series and shunt resistance of proposed structure. The proposed model achieved an efficiency of up to 31.4%, highlighting the potential of NiO &amp; SnS as BSF in antimony selenide solar cells. The metal work functions for front and back contacts are 4.4 eV and 5.1 eV respectively. This breakthrough suggests a transformative path toward significantly enhanced solar cell performance, showcasing the latent potential of NiO BSF in optimizing Sb2Se3-based solar cells.

Achieving 31.16 % efficiency in perovskite solar cells via synergistic Dion-Jacobson 2D-3D layer design

Among environmental friendly energy sources solar energy is prominent one that can be harnessed via photovoltaic (PV) cells. The hybrid organic & inorganic perovskite solar cells (PSCs), have shown appealing PV performance. Halide-based perovskites (PVSK) offer several advantages, including low cost, high efficiency, and ease of fabrication. However, there are stability issues with these 3D perovskite materials. The solar device based on 2D PVSK materials are being used more and more in modern applications to address these problems. Ruddlesden-Popper (RP) & Dion-Jacobson (DJ) phases are the two main forms of 2D PVSK. These materials offer significantly greater stability compared to 3D perovskites, making them a promising alternative. In this study, we combine 2D and 3D perovskites to strengthen both reliability as well as efficiency of 3D PSCs. The present work explores the combined effect of DJ 2D-3D PVSK layers on device performance. The DJ 2D material used is PeDAMA4Pb5I16, while the 3D material is the lead-free, stable CsGeI3-xBrx (with x = 1). The optimized solar cell structure developed in this work consists of (Au/Cu2O/PeDAMA4Pb5I16/CsGeI3-xBrx/PCBM/FTO). A thorough analysis was performed on the impact of various ETLs and HTLs, as well as factors such as defect density (Nt), 2D-3D layer thickness, shallow acceptor density (NA), series (RS) and shunt resistances (RSh), and temperature variations. In the present work, PCE has significantly improved, reaching an amazing 31.16 %. Other noteworthy metrics include a JSC 22.55 mA.cm−2, FF 88.47 % and VOC 1.5617 V, all demonstrating exceptional performance. These results demonstrate the effectiveness of our approach in strengthening the efficiency and performance of DJ 2D-3D PSCs, highlighting their potential for future applications.