Series Resistance Research Articles

Study on the influence of the cu ribbon detachment ratio on the electrical characteristics of photovoltaic modules

Abstract Based on the carrier transport path at the welding interface of a Cu ribbon, this study proposes a theoretical model of the Cu ribbon detachment ratio (DR) and the busbar resistance, Cu ribbon resistance, and contact resistance. The relationship between the Cu ribbon DR and the resistance of each welding layer, as well as the relative contribution of the resistance of each welding layer to the series resistance, is analyzed using the designed theoretical model. The results show that with the increase in the DR value, both the busbar resistance and contact resistance increase exponentially, whereas the Cu ribbon resistance decreases linearly. The effects of the busbar resistance, Cu ribbon resistance, and contact resistance on the series resistance are 36.22%, 0.40%, and 63.38%, respectively. The results also indicate that series resistance is mainly affected by the busbar resistance and contact resistance. The maximum value of the Cu ribbon detachment was quantitatively calculated, when the DR value is larger than 93%, the detachment of the Cu ribbon can make a photovoltaic module retired. In this study, photovoltaic modules with Cu ribbons having different DR values are fabricated and tested in the laboratory. The results show that the maximum relative errors of the series resistance, fill factor, and output power of the values calculated by the proposed model and experimental test values are 4.77%, 1.05%, and 1.40%, respectively. This verifies the feasibility of the proposed theoretical model. Finally, based on the relative contribution of the resistance of each welding layer to the series resistance, this study designs a B-type photovoltaic module with a thick-busbar and short-welding Cu ribbon. The results show that the electrical performance of the B-type photovoltaic module with a busbar thickness of 30 μm a welding length of the Cu ribbon of 70 % performs.

Characterization of the triphenylmethane dye (Patent Blue V)-modified Al/p-Si diode

The sol-gel spin coating method, an easily applicable, low-temperature, and inexpensive method, was used to grow Patent Blue V (PBV) organic thin films placed between metal and semiconductor. Atomic force microscope images were taken to reveal the morphological structure of the resulting organic film. FTIR, NMR, and UV-Vis measurements were taken to investigate the chemical features and optical structure of the PBV molecule. Using the traditional I-V, Cheung, and Norde methods of the produced Al/PBV/p-Si diode structure, ideality factor (n), barrier height (Φb), series resistance (Rs), and interfacial density of states (Nss) parameters were calculated. The differences between the results obtained with these methods arise from calculating the I-V characteristic of the methods from different regions. The ideality value of n for the produced diodes is much greater than one (n > > 1). Deviating the calculated n value from 1 indicates possible mechanisms, such as generation-recombination effect, organic PBV layer, and interfacial states. It was observed that the electronic parameters of the Al/p-Si conventional junction can be controlled using an organic PBV interlayer.Graphical abstract

Overcoming Printed Circuit Board Limitations in an Energy Harvester with Amplitude Shift Keying and Pulse Width Modulation Communication Decoder Using Practical Design Solutions

This paper presents PCB design solutions for implementing a radiative-field RF energy harvester with an ASK-PWM decoding communication scheme using available commercial components. The paper provides the design approach and tackles key challenges such as the impact of inductive parasitic effects at the output of the harvester, how to maintain the PCE at a constant value regardless of the time constant at the output of the communication path’s rectifier, and the difficulty of changing the aspect ratio of the discrete inverter used for PWM decoding. These challenges are addressed by using multiple capacitors connected in parallel at the output of the rectifier to reduce inductive parasitic effects, adding a series resistor in the communication path’s rectifier to isolate its loading from impacting the PCE, and utilizing a potentiometer in the inverter to realize PWM decoding on PCB. The system was manufactured using FR-4 substrate material with a size of 5 cm × 4 cm × 0.6 cm, harvesting energy at the ISM frequency of 924 MHz with a PCE of 42.12% at a bit rate of 15 Kbps. Moreover, the system consumes only 355 μW of power and maintains correct harvesting and decoding operation in the antenna separation range of 6–12 cm. This work aims to provide an alternative to IC realization by implementing the system entirely using commercial discrete components, reducing costs, adding flexibility, reducing development time, and allowing for simple debugging.

Selective Isolation of Surface Grain Boundaries by Oxide Dielectrics Improves Cd(Se,Te) Device Performance.

Cd(Se,Te) photovoltaics (PV) are the most widely deployed thin-film solar technology globally, yet continued efficiency improvements are stymied by challenges at the device hole contacts. The inclusion of solution-processed oxide layers such as AlGaOx in the contact stack has yielded improved device open-circuit voltages (VOC) and fill factors (FF). However, contradictory mechanisms by which these layers improve the device properties have been proposed by the research community. We demonstrate in this work that an underappreciated property of such spin-coated layers is the preferential deposition at grain boundaries, a process that isolates the grain boundaries during contact metallization. The effects of grain-boundary isolation are probed by varying the coverage of solution-processed AlGaOx "barrier" layers on the Cd(Se,Te) surface, quantified by scanning Auger microscopy. Examining coverage-dependent VOC and FF, it was observed that isolating the grain boundaries during metallization is sufficient to prevent damage to the absorber that occurs in devices lacking a barrier layer, while additional coverage contributes to the increased series resistance. Such an effect is agnostic to the material used as a barrier layer, as long as the material does not itself damage the absorber. Spin-coated SiOx was used in place of AlGaOx for an equally beneficial effect. This grain-boundary isolation phenomenon is also observed during Mo deposition and in absorbers that have been contacted with a nitrogen-doped ZnTe layer. The mechanisms by which metallization may degrade the absorber are discussed, as are contact design strategies leveraging barrier layers, which may lead to improved device efficiencies.

Bipolar Solid-Solution Hosts for Efficient Crystalline Organic Light-Emitting Diodes.

Crystalline organic semiconductors, recognized for their highly ordered structures and high carrier mobility, have emerged as a focal point in the field of high-performance optoelectronic devices. Nevertheless, the intrinsic unipolar properties, characterized by imbalanced hole and electron transport capabilities, have continuously represented a significant challenge in the advancement of high-performance crystalline thin-film organic light-emitting diodes (C-OLEDs). Here, a bipolar solid-solution thin film with a maintained crystal structure has been fabricated using 2-(4-(9H-carbazol-9-yl)phenyl)-1(3,5-difluorophenyl)-1H-phenanthro [9,10-d]imidazole (2FPPICz) and 4-(1-(3,5-difluorophenyl)-1H-imidazo[4,5-f][1,10]phenanthrolin-2-yl)-N,N-diphenylaniline (2Fn) via a weak epitaxial growth (WEG) process, exhibiting nearly equivalent hole and electron mobilities (10-2-10-1 cm2 V-1 s-1). We have demonstrated a blue C-OLED that achieves high efficiency while maintaining low-efficiency roll-off, employing the bipolar solid-solution thin film as the crystalline host matrix and 4,4'-bis[2-(4-(N,N-diphenylamino)phenyl)vinyl]biphenyl (DPAVBi) as the doped emitter. This device achieves a maximum external quantum efficiency (EQE) of 4.6% with Commission Internationale de L'Eclairage (CIE) coordinates lying around (0.15, 0.22). Among crystalline light-emitting devices utilizing carrier-balanced transport, this EQE stands as one of the highest recorded values. Notable advancements include enhanced photon emission capabilities, optimized driving voltage (4.0 V @ 1000 cd m-2), and a lower series resistance Joule heat loss ratio (11.8% @ 1000 cd m-2). This research marks a significant stride in modulating the inherent electrical properties of crystalline host materials, offering a novel and efficacious strategy for the advancement of high-performance crystalline OLEDs.

A Study on Equivalent Series Resistance Estimation Compensation for DC-Link Capacitor Life Diagnosis of Propulsion Drive in Electric Propulsion Ship

A Study on Equivalent Series Resistance Estimation Compensation for DC-Link Capacitor Life Diagnosis of Propulsion Drive in Electric Propulsion Ship

Estimation of Equivalent Series Resistance (ESR) of Supercapacitors Using Charging/Discharging Kinetics.

One of the key parameters that affects efficiency, power density and performance of a supercapacitor (SC) is the equivalent series resistance (ESR). In this study we propose a method to estimate ESR from the charging kinetics which has practical applications. Therefore, to study the ESR of the SC we must look at the different factors that affect this resistance. In this study, the rise time extracted from the charging kinetics curves of the SC was used as an indirect method to investigate the ESR of the SC. Three different parameters were taken into account: ionic mobility, solvent material and pore cavity size of the porous electrode. The results offer enlightening information for optimizing the design of the SC with higher performance and smaller ESR values that will be translated into a better energy storage technologies.

Optimizing Cs2CuBiBr6 double halide perovskite for solar applications: the role of electron transport layers in SCAPS-1D simulations.

Perovskite solar cells are commonly employed in photovoltaic systems because of their special characteristics. Perovskite solar cells remain efficient, but lead-based absorbers are dangerous, restricting their manufacture. Therefore, studies in the field of perovskite materials are now focusing on investigating lead-free perovskites. The SCAPS-1D simulator is used to simulate the impact of lead-free double perovskite as the absorber in perovskite solar cells. The research examines how the effectiveness of solar cells is impacted by a hole transport layer (CBTS) and several electron transports layers (WS2, C60, PCBM, and TiO2), using Ni and Al acting as the back and front contacts metal. This work explores the impact of a Cs2CuBiBr6 perovskite as a solar cell absorber. The effectiveness of these device structures depends on defect density, absorber thickness, ETL thickness, and ETL combination. With WS2, C60, PCBM, and TiO2, the device's power conversion efficiency (PCE) is 19.70%, 18.69%, 19.52%, and 19.65%, respectively. This research also highlights the impact of the absorber and HTL thickness. This investigation further included the analysis of the valence band offset (VBO) and conduction band offset (CBO). We also investigated the current density-voltage (J-V), quantum efficiency (QE), series and shunt resistance, capacitance-Mott-Schottky characteristics, and photocarrier generation-recombination rates and effective temperature. This study provides crucial structural design guidelines for a lead-free double perovskite device and highlights solar energy optoelectronic developments.

Achieving 32.9% efficiency in Pb-Based quantum dot solar cells via SCAPS-1D simulation optimization

Abstract This study presents a comprehensive investigation and in-depth analysis of the optimization of Pb-based quantum dot solar cells (QDSCs), concentrating on the influences of doping concentration, absorber layer thickness, defect density, temperature, and resistive elements. We systematically examined three absorber materials: lead sulfide (PbS), tetrabutylammonium iodide-treated PbS (PbS-TBAI), and lead selenide (PbSe) quantum dots (QDs). Optimal doping concentrations of 1 × 10 17 cm−3 for PbS and 1 × 10 22 cm−3 for both PbS-TBAI and PbSe were identified. Our findings reveal that precise control of these parameters can significantly enhance power conversion efficiency (PCE), achieving values of 24.6%, 28%, and 26.2% for PbS, PbS-TBAI, and PbSe, respectively. Additionally, we investigated the impact of absorber layer thickness on device performance. We discovered that a 1 µm thickness for PbS yields a maximum PCE of 32.9% due to balanced photon absorption and reduced Shockley–Read–Hall recombination. Conversely, PbSe’s performance declined with increased thickness because of its layer-dependent bandgap. We found that lower defect densities ( 1 × 10 14 cm−3) critically improve PCE and fill factor across all materials. The temperature-dependent studies demonstrated that PbS-TBAI exhibits remarkable resilience, maintaining efficiency under thermal stress due to effective surface passivation. Analyses of series and shunt resistances highlighted the importance of minimizing internal resistances to optimize device performance. The proposed device structure comprises a fluorine-doped tin oxide front contact layer, a silver sulfide (Ag2S) electron transport layer, the QD absorber layer (PbS, PbS-TBAI, or PbSe), and copper(I) oxide (Cu2O) hole transport layer. Utilizing cascade band alignment, we achieved a record PCE of 32.9%. This research highlights the significant potential of Pb-based QDSCs for achieving high efficiencies through promising material and structural optimization, positioning them as competitive candidates for next-generation solar technologies. The results provide a valuable understanding of designing high-performance QDSCs, paving the way for their integration into sustainable energy solutions.

A comprehensive SCAPS-1D simulation study on the photovoltaic properties and efficiency enhancement of CH3NH3PbCl3 perovskite solar cells

Abstract Recent progress in lead (Pb) halide perovskites has inspired much research into economical solar cells, focusing on critical issues of stability and toxicity. This study investigates the performance of perovskite solar cells (PSCs) by simulating the impact of a methylammonium lead chloride (CH3NH3PbCl3) layer as the absorber material using the SCAPS-1D simulator. The first comprehensive study of this material examines the role and configuration of the Electron Transport Layer (ETL) and Hole Transport Layer (HTL), as well as the absorber layer, on solar cell performance. The ETLs used in the device optimization are ZnO, SnO2, IGZO, and CdS; the HTL is CuO; and the front and back contacts are Au and Ni, respectively. The study highlights CuO as the optimal HTL for CH3NH3PbCl3, delivering power conversion efficiencies (PCEs) of 16.10%, 16.06%, 16.05%, and 14.41% with ZnO, SnO2, IGZO, and CdS as ETLs, respectively. The performance of these device architectures is significantly influenced by factors such as defect density, absorber layer thickness, ETL thickness, and the combination of different ETLs and CuO HTLs. Furthermore, this study elucidates the impact of absorber and HTL thickness on key photovoltaic parameters, such as VOC, JSC, FF, and PCE. Also, we have discussed the VBO, and CBO for different ETLs. Additionally, we examine the effects of series and shunt resistance, operating temperature, quantum efficiency (QE), capacitance-voltage characteristics, generation and recombination rates, and current density-voltage (J-V), analysis of absorption data, and impedance analysis behavior on achieving the highest efficiency of the device. This comprehensive study provides critical insights into designing cost-effective, high-performance PSCs, and advancing the development of next-generation photovoltaic technologies.

Reconfigured single- and double-diode models for improved modelling of solar cells/modules

Proper modeling of PV cells/modules through parameter identification based on the real current-voltage (I-V) data is important for the efficiency of PV systems. Most related works have concentrated on the classical single-diode model (SDM) and double-diode model (DDM) and their parameter extraction by various metaheuristic algorithms. In order to render more accurate and representative modeling, this paper adds a small resistance in series with the diodes in SDM and DDM. The new models are named reconfigured SDM (Reconfig-SDM) and reconfigured DDM (Reconfig-DDM), and they have not been studied so far as we know. A squirrel search algorithm (SSA) is employed to globally find the parameters of the new models. The performance achieved is experimentally tested on both a commercial RTC France solar cell and a CS6P-220P polycrystalline PV module located at Düzce University in Türkiye. A vivid comparison of experimental findings, observation, and analysis clearly demonstrates that the proposed Reconfig-SDM and Reconfig-DDM tuned by the SSA have better capacity and effectiveness for modeling PV devices than some cutting-edge approaches. Specifically, compared with the best-performing approach in the literature, Reconfig-SDM and Reconfig-DDM could reduce the error rate up to 0.37% and 2.58% for the solar cell, and 3.21% and 29.0% for the solar module.

Entropies in Electric Circuits.

The present study examines the relationship between thermal and configurational entropy in two resistors in parallel and in series. The objective is to introduce entropy in electric circuit analysis by considering the impact of system geometry on energy conversion in the circuit. Thermal entropy is derived from thermodynamics, whereas configurational entropy is derived from network modelling. It is observed that the relationship between thermal entropy and configurational entropy varies depending on the configuration of the resistors. In parallel resistors, thermal entropy decreases with configurational entropy, while in series resistors, the opposite is true. The implications of the maximum power transfer theorem and constructal law are discussed. The entropy generation for resistors at different temperatures was evaluated, and it was found that the consideration of resistor configurational entropy change was necessary for consistency. Furthermore, for the sake of generalization, a similar behaviour was observed in time-dependent circuits, either for resistor-capacitor circuits or circuits involving degradation.

Efficient hole extraction by doped-polyaniline/graphene oxide in lead-free perovskite solar cell: a computational study

Abstract The intriguing behavior of doped polyanilinine/graphene oxide (PANI/GO) offers a solution to the pivotal problem of device stability against moisture in perovskite solar cell (PSC). Tunable bandgap formation of doped PANI/GO with an absorber layer allows effective flexibility for charge carrier conduction and reduced series resistance further boosting the cell performance. Herein, the L9 Orthogonal Array (OA) Taguchi-based grey relational analysis (GRA) optimization was introduced to intensify the key output responses. Furthermore, this work also delved into incorporating a Pb-free absorber perovskite layer, formamidinium tin triiodide (FASnI3), and concomitantly eluding the environmentally hazardous substance. The numerical optimization supported by statistical analysis is based on experimental data to attain the utmost peak cell efficiency. Taguchi’s L9 OA-based GRA predictive modeling recorded over one-fold enhancement over experimental results, reaching as high as 20.28% power conversion efficiency (PCE). Despite that, the PCE of the structures is severely affected by interface defects at the electron transport layer/absorber (ETL/Abs) vicinity, which is almost zero at merely 1 × 1014 cm−2, manifesting that control measures need to be taken into account. This work deduces the feasibility of ETL/Abs stack structure in replacing the conventional Pb-based perovskite absorber layer, while maximizing the potential use of doped PANI/GO as a hole transport layer (HTL).

Improved capacitance of NiO and nanoporous silicon electrodes for micro-supercapacitor application

We investigated the NiO/PS/Si and the NiO/Si electrodes to highlight the effect of the PS porous silicon on the enhancement of the electrode performance. We elaborated the PS with the stain etching method, whereas the NiO nickel oxide was synthesized using sol–gel and deposited through the spin coating technique. We showed that PS porous silicon significantly increased the active surface area and improved the electrical and electrochemical properties. Thus, we obtained promising results for NiO/PS/Si. The effective series resistance and interfacial resistances were reduced from 1.8 Ω cm2 and 42 Ω cm2 to 0.05 Ω cm2 and 0.29 Ω cm2 from NiO/Si to NiO/PS/Si, respectively. The capacitance increased from 12.34 µF cm−2 for NiO/Si to 9.64 mF cm−2 for NiO/PS/Si. We found similar capacity values from the CV cyclic voltammetry curves and IS impedance spectroscopy Nyquist plots. We obtained equivalent effective series resistance values from the charge–discharge and Nyquist plots, confirming our results. The NiO/PS/Si electrode showed good stability with only a 3% loss for 5000 galvanostatic cycles. The energy efficiency is estimated from the charge–discharge curves to be 91%.

Optimization of Lead-Free Cs2TiBr6 Green Perovskite Solar Cell for Future Renewable Energy Applications

Introduction: A modern genre of solar technology is Perovskite solar cells (PSCs), which are growing rapidly because they work well. The composition of links within the hole transport materials, electron transport materials and the footprint on PSCs is perovskite Methods: The traditional genre of lead halide perovskite can be swapped with a new perovskite compound called Cs2TiBr6. Cs2TiBr6 has better properties when it comes to light, electricity, and solar energy. When comparing the performance of various electron transport films (ETFs) for the effective operation of perovskite, TiO2 is recognized as an ETF as it has higher thermal stability, low-cost, and appropriate energy level Results: The most productive hole transport film (HTF) for these perovskite solar cells, compared to other HTFs, has been demonstrated as V2O5. Conclusion: The various solar cell characteristics of the proposed device, the "Au/V2O5/Cs2TiBr6/TiO2/TCO" perovskite solar cell, are investigated in this examination by tuning the parameters such as temperature, series resistance, defect density, etc.

Enhancement of Electrical Parameter Extraction from Solar Cells Using a Hybrid Genetic Algorithm with the Levenberg-Marquardt Method

Accurate modeling and simulation of solar photovoltaic (PV) systems are critical for optimizing their performance and efficiency. This requires precise determination of electrical parameters of solar cells, such as photocurrent (Iph), saturation current (I0), series resistance (Rs), shunt resistance (Rsh), and ideality factor (n). Traditional numerical methods for parameter extraction often face limitations in complexity, speed, and assumption dependencies. To address these issues, this study proposes a hybrid method that combines a genetic algorithm with the Levenberg-Marquardt algorithm (GALM) for solar cell parameter extraction. The genetic algorithm provides a robust initial estimate of the parameters, which is then refined by the Levenberg-Marquardt algorithm to achieve high accuracy. The performance of the proposed GALM method is validated using experimental data from a 57-mm silicon solar cell from R.T.C. France. Results indicate that the GALM method achieves one of the lowest RMSE values compared to other optimization techniques, demonstrating its effectiveness in accurately extracting solar cell parameters and closely matching the experimental I-V data. This contributes significantly to optimizing the performance and efficiency of PV systems.

Demonstration of a novel majority logic in a memristive crossbar array for in-memory parallel computing.

A memristive crossbar array can execute Boolean logic operations directly within the memory, which is highly noteworthy as it addresses the data bottleneck issue in traditional von Neumann computing. Although its potential has been widely demonstrated, achieving practical levels of operational reliability and computational efficiency remains a challenge. Here, we introduce a three-input majority logic gate supported by near-memory operations, serving as a universal gate and achieving both robust reliability and high efficiency in versatile logic operations. We fabricated a highly reliable HfOx-based memristive array, incorporating a series resistor to increase the reset voltage of the memristor, thereby increasing the operational voltage margin of the gate operation. This ensured reliable operation of the majority gate, resulting in successful experimental proof of combined 1-bit full adder and subtractor operations performed in 5 steps using 7 cells. Additionally, we propose that an N-bit parallel prefix adder (PPA) operation is possible in O(log2 N) steps, by taking advantage of the parallel operation capability of the majority gate. This achieves 8.5× higher spatiotemporal efficiency than the previously reported NOR-based logic system in 64-bit adder operation. Moreover, as N increases, the spatiotemporal efficiency further improves, which significantly enhances the applicability of memristive logic-in-memory.

Effect of the incorporation of gold nanoparticles on the current‒voltage characteristics of Ag/Si diodes in the dark and under light

The use of nanoparticles in electronic devices has become common practice for controlling and improving device performance. In this research, gold nanoparticles (AuNPs) were introduced into silver‒silicon (Ag/Si) Schottky diodes to investigate their impact on the current voltage (I‒V) behavior in both the dark and light surroundings. Spin coating was used to deposit a film of AuNPs on the Si substrate, followed by thermal evaporation of Ag metal to create the concluding Ag/AuNP/Si diode. Study of the I‒V curves revealed a reduction in the barrier height after the addition of AuNPs in both the dark and illuminated settings. Furthermore, the presence of AuNPs led to a decrease in both the series (Rs) and shunt (Rsh) resistances when the diode was exposed to light, indicating an improvement in the photosensitivity of the Ag/Si structures. This enhancement was attributed to the ability of AuNPs to increase light absorption through local interface plasmon excitations, resulting from the shared oscillation of free electrons on metallic surfaces

Affordable excellence: unveiling the potential of graphitic carbon-based counter electrodes for high-performance dye-sensitized solar cells

Dye-Sensitized Solar Cells (DSSCs) have emerged as a promising alternative energy technology due to their minimal material requirements and straightforward production process, enabling efficient performance even under low-light conditions. Traditionally, high-performance DSSCs utilize platinum as the counter electrode. However, the high cost of platinum necessitates the development of more affordable counter electrodes that can match or surpass platinum-based counter electrodes (CEs) in conversion efficiency. This study investigates the synthesis and application of various cost-effective counter electrodes, including candle flame carbon soot, pencil lead graphite, and CS-coated PLG, in highefficiency DSSCs. For comparison, a platinum-based counter electrode is used as a benchmark. The working electrode comprises TiO2 on Fluorine-Doped Tin Oxide substrates. The DSSCs fabricated with counter electrodes such as PLG, CS, and CS-coated PLG exhibit efficiencies of approximately 6.2%, 3.5%, and 8.5%, respectively, compared to 10.8% for the Pt-based counter electrode. Reduced series resistance contributes to an improved Fill Factor and increased conversion efficiency. Furthermore, impedance spectroscopy reveals higher capacitance at the CE/electrolyte interface, enhancing charge collection efficiency and electron lifetime. Thus, the potential for significant improvement in conversion efficiency makes low-cost PLG and carbon-based electrodes a highly attractive alternative to Pt-based electrodes.

Investigation of the Electrochemical Properties of 3D Recyclable Aluminium doped LiMn2O4 Electrode: Improved Power and Energy Densities for Lithium-ion Battery Usage

The Composites of Al-Doped LiMn2O4; Al0.1:(LiMn2O4)0.9 and AI0.3:(LiMn2O4)0.7, were prepared using the hydrothermal method and drop casting deposition technique. The electrochemical performance of the Al-doped LiMn2O4 composite as a promising anode material for lithium-ion batteries was characterised by cyclic voltammetry analysis, electrochemical impedance spectroscopy and galvanostatic charge discharge analysis. The anodes' material exhibits a reversible capacity loss, which can be primarily linked to reverse reactions within the solid electrolyte interface formation, aluminium adsorption in the conducting LiMn2O4, and the electrolyte's electrochemical breakdown. The charges that are retained in the anode material during charging showed a linear decline in charge capacity as charging current intensity increased. Ionic polarisation was the reason for the observed drop in the charge and discharge capabilities at the current density of 5 A/g. Having greater specific capacitance and energy density, the composite Al0.1:(LiMn2O4)0.9, is a better anode material for electrochemical applications compared to Al0.3:(LiMn2O4)0.7, also its comparatively higher power density at a scan rate of 5 mV/s is mostly explained by its lower equivalent series resistance.