Resist Polymethyl Methacrylate Research Articles

Bridge-free fabrication process for Al/AlOx/Al Josephson junctions**Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0301802) and the National Natural Science Foundation of China (Grant Nos. 11474152, 91321310, 11274156, 11504165, and 61521001).

We fabricate different-sized Al/AlOx/Al Josephson junctions by using a simple bridge-free technique, in which only single-layer E-beam resist polymethyl methacrylate (PMMA) is exposed at low accelerate voltage (below 30 kV) and the size of junction can be varied in a large range. Compared with the bridge technique, this fabrication process is very robust because it can avoid collapsing the bridge during fabrication. This makes the bridge-free technique more popular to meet different requirements for Josephson junction devices especially for superconducting quantum bits.

CSAR 62 as negative-tone resist for high-contrast e-beam lithography at temperatures between 4 K and room temperature

The temperature dependence of the electron-beam sensitive resist CSAR 62 is investigated in its negative-tone regime. The writing temperatures span a wide range from 4 K to room temperature with the focus on the liquid helium temperature regime. The importance of low temperature studies is motivated by the application of CSAR 62 for deterministic nanophotonic device processing by means of in situ electron-beam lithography. At low temperature, CSAR 62 exhibits a high contrast of 10.5 and a resolution of 49 nm. The etch stability is almost temperature independent and it is found that CSAR 62 does not suffer from peeling which limits the low temperature application of the standard electron-beam resist polymethyl methacrylate. As such, CSAR 62 is a very promising negative-tone resist for in situ electron-beam lithography of high quality nanostructures at low temperature.

Proton beam writing of microstructures at the ion nanoprobe LIPSION

Proton beam writing (PBW) is a direct writing technique which allows the creation of three-dimensional structures with a high aspect ratio in the micrometer and nanometer range in photoresist materials without the use of templates. At the high-energy ion nanoprobe LIPSION of the University of Leipzig this technique was established recently. In this article the latest results concerning this topic are presented. PBW was successfully performed with the positive resist polymethyl methacrylate (PMMA) which is now used at LIPSION in addition to the negative resist SU-8. With the new data acquisition system MICRODAS being commissioned, a new scan program was developed and tested which is dedicated to the creation of arbitrarily shaped structures. Squares with dimensions down to 1.2μm were created in SU-8 at LIPSION. Furthermore, Ni grids were produced by electroplating, using templates written in PMMA resist. In addition, first structures for studying the growing behavior of Bragg reflectors and the optical characterisation of ZnO nanowhiskers were produced by PBW.

Ion beam impact and penetration of polymethyl methacrylate

Depth distributions of energy dissipation and implantation ranges in the polymer resist polymethyl methacrylate (PMMA) have been calculated by using the TRIM computer code. The relevance of such calculations to experimentally obtained data in connection with ion-beam lithography is discussed. It is concluded that the result of the computer simulations may be of value in order to explain the responsible mechanism for the modification (solubility, erosion rate) of a resist material due to ion irradiation. Experimental results of PMMA erosion during ion irradiation are also presented, showing a strong relationship between the erosion and electronic stopping.