High precision, single-wavelength optical monitoring of reflectance was shown to be useful in the study of initial oxidation of very thin metal films by low pressure oxygen at room temperature. Thin films of Al, Ni, and Hf metal were sputter-deposited on silicon substrates and their subsequent oxidations were observed at low oxygen partial pressure using a temperature-stabilised laser diode reflectometer. Based on the derived properties of the appropriate metal and oxide films, optical monitoring data were fitted as a multilayer stack comprised of oxide/metal/SiO2/Si. The fitting results show that the exposure to oxygen at a partial pressure of 0.04 Pa forms a certain finite thickness of oxide film on the metal surface. A range of kinetic models such as Deal-Grove, Massoud, and Cabrera-Mott are commonly used to describe the surface oxidation process. However, these models cannot be applied to the initial stage of oxidation, which occurs when a pure metal surface is exposed to oxygen as measured here. Instead, simple chemical reaction kinetics is used to model the time-dependent experimental results of the early stages of oxidation, thus we obtain the equation d(t) = do[1iexp(it/τ )] and d(t) = do[1i1/(1+t/τ )] for the gas environments of this investigation. OCIS codes: 240.0240, 240.0310, 240.6648. doi: 10.3788/COL201008S1.0087. An oxide layer forms rapidly when a fresh metal surface is exposed to an oxygen-including atmosphere. At atmospheric pressure and room temperature, the layer is usually self-limiting, resulting in a so-called native-oxide layer with a thickness of a few nanometers. For example, in Banerjee’s report [1] , a silicon wafer had a native oxide layer of around 2 nm, while according to the investigation in Ref. [2] on the initial oxidation of Fe-nanoparticles, the typical thickness of the native oxide layer was said to be 2i3 nm. The thickness of oxide formed on thin metal films is of interest for a number of applications. This is particularly so for metallisation layers used in the manufacture of backplanes for plastic electronics where two or more very thin layers of metal may be necessary to provide both adhesion to the polymer substrate and sufficiently low sheet resistance (e.g., Ti/Au, Ni/Au, Cr/Au, etc.). Even when no oxygen is deliberately introduced into the vacuum chamber, low levels may still be available to the metal films due to residual water vapour outgassing from the polymer substrate or the chamber walls. The degree and rate of oxidation of the less noble, adhesion-promoting layers at the typical oxygen pressures encountered in vacuum chambers are of great importance in determining the performance and lifetime of devices and are not easily measured after deposition is complete. In the course of researching alternative metallisation layers, we investigated the first stage of oxidation of several metals at low oxygen partial pressures and presented some initial results. Precise in-situ measurements of reflectance during the deposition and oxidation of thin metal films of Al, Ni, and Hf on silicon substrates were used to measure reliably extremely thin oxide films formed in very low oxygen partial pressures.
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