A stress-free oxidation model considering the microstructural characteristics of SiC/SiC mini-composites was proposed based on the electrical resistance change before and after oxidation. The relationship between the electrical resistance and the thickness of the internal fiber oxide layer was established. The stress-free oxidation tests were carried out at different temperatures for different oxidation times. The results of the oxide layer thickness calculated by the model agree well with those of the SEM observation. Based on the microstructure of tensile fracture after oxidation, the residual strength model of SiC/SiC mini-composites was proposed. The residual strength of the specimens after stress-free oxidation was calculated based on the oxide layer thickness obtained from the model. The error between the calculated and experimental results is within 14.48 %.