AbstractMeasurements of sulfur diffusion have been carried out on single crystals and polycrystalline samples of the semiconductor element selenium using the residual activity method and a continuous surface method by means of the tracer S‐35 in the temperature range 40 to 95 °C. In the direction of the trigonal axis (‖ c) the volume diffusion in single crystals can be represented by D‖ = 1.1 × 10−5 exp (−0.6 eV/kT) cm2 s−1 and in the plane perpendicular to the trigonal axis (⟂ c) by D⟂ = 1.7 × 103 exp (− 1.15 eV/kT) cm2 s−1. Using the surface method the diffusion in polycrystalline material can be described by DP = 2.35 × 104 exp (− 1.20 eV/kT) cm2 s−1. The coefficient for the diffusion along short circuit paths is estimated to be in the region of 10−9 cm2 s−1. It can be presumed that S‐diffusion in both crystallographic directions of Se is governed by different mechanisms. The absorption of β‐radiation in Se can be expressed by the equation μ/ϱ = 26 E cm2 g−1.