Regioregular Of Poly Research Articles

Low-Regioregularity Polythiophene for a Highly Sensitive and Stretchable Gas Sensor

In this study, we examined how the regioregularity of poly(3-hexylthiophene) (P3HT) affects molecular packing, free volume, charge transport, and gas sensing properties. Our results showed that the presence of regular alkyl side chains on the polymer backbone promoted a high degree of structural order in regioregular P3HT molecules, leading to a compact packing density and reduced free volume. Consequently, it was more challenging for NO2 molecules to interact with the hole charge carriers in the conductive channel. On the other hand, the regiorandom P3HT films displayed a larger free volume, attributed to the irregular side chains, which facilitated the gas-analyte interaction while impeding efficient charge transport. Thus, these films exhibited greater sensitivity to analyte gas molecules. The molecular order, packing density, and hardness of P3HT films were confirmed through the use of multiple techniques, including UV-vis spectroscopy, atomic force microscopy, and grazing-incidence X-ray diffraction. Additionally, the regiorandom P3HT films showed enhanced mechanical flexibility compared to the regioregular films. In conclusion, our findings emphasize that the regularity of polymer molecules plays a significant role in determining the charge carrier transport and gas adsorption characteristics.

Sulfur-Doped Molybdenum Oxide Anode Interface Layer for Organic Solar Cell Application

Efficient organic solar cells (OSCs) based on regioregular of poly (3-hexylthiophene):fullerene derivative [6,6]-phenyl-C61butyric acid methyl ester composites have been fabricated on indium tin oxide (ITO) coated glass substrates by using a sputtered sulfur-doped molybdenum oxide (S-MoO3) film as anode interface layer (AIL). With the help of X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy, we find that oxygen flow ratio control can modulate the amount of sulfur doping into MoO3, then further tune the Mo(+4)/Mo(+5)/Mo(+6) composition ratios, Fermi level, electron affinity, valence band ionization energy and band gap of MoO3. A partially occupied Mo 4d-bands of Mo(5+) and Mo(4+) states modulated by sulfur doping are the main factor which influences the valence electronic structure of S-MoO3.These orbitals overlap interrelation push the valence band close to S-MoO3's Fermi level, thus make it into a p-type semiconductor. S-MoO3 with smaller ionization energy and electron affinity is better suitable as an efficient AIL. On the basis of these AILs, a photovoltaic power conversion efficiency up to 3.69% has been achieved, which is 12% higher than that in pure MoO3 AIL case. The result thus shows that sulfur doping is a useful method to modify anode interface layer for improving the hole-transport properties of MoO3, which can improve the device performances.

Photovoltaic Solar Cells with Metal Oxide Semiconductor Anode and Mutilayer

Al doped zinc oxide (AZO) as anode for bulk-heterojunction [regioregular of poly(3-hexylthiophene) (P3HT):(6,6)-phenyl C61 butyric acid methyl ester (PCBM)] organic solar cells was investigated. We got efficient flexible solar cells with a highly transparent and electrical conductive NiO film as hole-transporting layer (HTL) on optimized AZO substrate. The strcture of this kind of devices is PET/AZO/NiO/P3HT: PCBM /Al. The highest power conversion efficiency (PCE) on glass substrate is 3.15%, and 1.66% on flexible substrate. The physical and electrical properties of AZO thin film were discussed, and the device photovoltaic characteristics were investigated in detail.

Effects of solvent and temperature on regioregularity of poly(3-hexylthiophene-2,5-diyl) prepared by chemical oxidative polymerization

Chemical oxidative polymerization (COP) of 3-hexylthiophene in polar solvents, such as CH3CN and CH2Cl2, smoothly proceeded at temperatures below 0 °C to afford regio-controlled poly(3-hexylthiophene-2,5-diyl) (P3HexTh) with a head-to-tail (HT) content of higher than 80%. Use of CH3CN at −40 °C gave P3HexTh with 83% HT content, Mn (number-average molecular weight) of 42 000, and a relatively narrow polydispersity of 1.6. Obtained P3HexTh formed an ordered structure in solid, and NOBF4-treated film of P3HexTh with the HT content of 83% showed electrical conductivity of 3.0 S cm−1.

Study on Nickle Oxide Thin Film as Buffering Layer in Photovoltaic Solar Cells

A new buffering layer(nickle oxide thin film) of organic solar cells was presented. The device strcture is Anode/NiO/P3HT[regioregular of poly(3-hexylthiophene)]: PCBM[(6,6)-phenyl C61 butyric acid methyl ester] /Al. Nickle Oxide(NiO) thin film is a good alternative of hole tansporting layer. We investigates the film from physical and electrical aspects, such as morphology, deposition temperature, thickness etc. The best power conversion efficiency of device we got with NiO buffering layer is 2.49%, which is hundred times of ones without NiO buffering layer.We find that the optimum fabrication conditions are: room temperature deposition, 10nm of thickness, and 30% oxygen proportion.

Flexible Photovoltaic Solar Cells with Nickle Oxide Buffering Layer

An efficient flexible organic solar cell was presented. The highest power conversion efficiency (PCE) of 3.2% and 2.5% were achieved on glass substrate and flexible substrate individually. The device photovoltaic properties were discussed in terms of the band diagrams and series resistance of the devices. Also the properties of nickle oxide thin film on different conditions were investigated too. Room temperarure sputtered and highly conductive nickle oxide (NiO) thin film as hole transporting layer in the cells. The strcture of this kind of devices is PET/ITO/NiO/P3HT: PCBM [regioregular of poly (3-hexylthiophene):(6,6)-phenyl C61 butyric acid methyl ester] /Al. On the study of characteristics of Nickle oxide thin film, such as sputtering temperature, thickness, and oxygen proportion, we found that NiO with 10 nm and sputtered at room temperature shows the best photovoltaic properties.

Nickle Oxide Based Bulk Heterojunction Flexible Solar Cells

This paper presents an efficient flexible organic solar cell with room temperarure sputtered and highly conductive nickle oxide (NiO) thin film as hole transporting layer. The strcture of this kind of devices is PET/ITO/NiO/P3HT: PCBM [regioregular of poly (3-hexylthiophene):(6,6)-phenyl C61 butyric acid methyl ester] /Al. On the study of characteristics of Nickle oxide thin film, such as sputtering temperature, thickness, and oxygen proportion, we found that NiO with 10 nm and sputtered at room temperature shows the best photovoltaic properties. The highest power conversion efficiency (PCE) of 3.26% and 2.5% were achieved on glass substrate and flexible substrate individually. The device photovoltaic properties were discussed in terms of the band diagrams and series resistance of the devices. Also the properties of nickle oxide thin film on different conditions were investigated too.

Flexible Photovoltaic Solar Cells Based on AZO Anode

This paper presented an efficient flexible bulk-heterojunction [regioregular of poly(3-hexylthiophene) (P3HT):(6,6)-phenyl C61 butyric acid methyl ester (PCBM)] solar cells with a highly transparent and electrical conductive NiO film as hole-transporting layer (HTL) on optimized Al doped zinc oxide (AZO) substrate. The strcture of this kind of devices is PET/AZO/NiO/P3HT: PCBM /Al. The highest power conversion efficiency (PCE) on glass substrate is 3.15%, and 1.66% on flexible substrate. The physical and electrical properties of AZO thin film were discussed, and the device photovoltaic characteristics were investigated in detail.

A New Buffering Layer of Photovoltaic Solar Cells

This paper presents a new buffering layer(nickle oxide thin film) of organic solar cells. Nickle Oxide(NiO) thin film is a good alternative of hole tansporting layer. We investigates the film from physical and electrical aspects, such as morphology, deposition temperature, thickness etc. We find that the optimum fabrication conditions are: room temperature deposition, 10nm of thickness, and 30% oxygen proportion. The device strcture is Anode/NiO/P3HT[regioregular of poly(3-hexylthiophene)]: PCBM[(6,6)-phenyl C61 butyric acid methyl ester] /Al. And the best power conversion efficiency of device we got with NiO buffering layer is 2.49%, which is hundred times of ones without NiO buffering layer.

P-type indium oxide thin film for the hole-transporting layer of organic solar cells

Efficient organic solar cells (OSCs) based on regioregular of poly (3-hexylthiophene): fullerene derivative [6,6]-phenyl-C61 butyric acid methyl ester composites have been fabricated on fluorine-doped tin oxide coated glass substrates by using a sputtered indium oxide film as a hole-transporting layer (HTL). Optimized parameters for p-type In2O3 layer fabrication have been obtained through In2O3 layer sputtering temperature modulation. Based on this HTL, photovoltaic devices have been fabricated, and a power conversion efficiency up to 1.32% has been achieved. With the help of X-ray photoelectron spectroscopy and Hall-effect measurements, we conclude that the formation of In(OH)3/InOOH on the surface of In2O3 film could increase the electrical resistivity of films and affect the performance of OSC further.

Efficient flexible organic solar cells with room temperature sputtered and highly conductive NiO as hole-transporting layer

We report efficient bulk-heterojunction [regioregular of poly(3-hexylthiophene) (P3HT) : (6,6)-phenyl C61 butyric acid methyl ester(PCBM)] solar cells with a highly transparent and electrical conductive NiO film as hole-transporting layer (HTL). The highest power conversion efficiency (PCE) of 3.26% of FTO/NiO/P3HT : PCBM/Al solar cells on glass was achieved through NiO thin film sputtering temperature, film thickness optimization and it was found that NiO with 10 nm and sputtered at room temperature shows the best photovoltaic properties. Under the optimized condition, PCE of 2.5% on flexible substrate was achieved with highly electrical conductive and room temperature sputtered NiO as HTL.

Bulk heterojunction solar cells with NiO hole transporting layer based on AZO anode

We report efficient bulk-heterojunction [regioregular of poly(3-hexylthiophene) (P3HT):(6,6)-phenyl C 61 butyric acid methyl ester (PCBM)] solar cells with a highly transparent and electrical conductive NiO film as hole transporting layer (HTL) on optimized Al doped zinc oxide (AZO) substrate. The highest power conversion efficiency (PCE) of 3.15% of AZO/NiO/P3HT:PCBM/Al solar cells was achieved through NiO nano-layer sputtering O 2/Ar flow ratio, film thickness optimization and it was found that room temperature sputtered NiO at an O 2/Ar ratio of 3:7 and with a thickness of 10 nm shows the best photovoltaic properties.

An inverted organic solar cell employing a sol-gel derived ZnO electron selective layer and thermal evaporated MoO3 hole selective layer

We reported an efficient inverted bulk-heterojunction [regioregular of poly(3-hexylthiophene): (6,6)-phenyl C61 butyric acid methyl ester] solar cell with a highly transparent sol-gel derived ZnO film as electron selective layer and MoO3 as hole selective layer. By modifying the precursor concentration of sol from 0.75 to 0.1M, the optical transmittance of ZnO film increases from 75% to 95%. This improvement in transmittance increases the short-circuit density of inverted solar cell from 5.986 to 8.858 mA/cm2 without sacrificing the open-circuit voltage and fill factor of the device. We also demonstrated that the device incorporated with MoO3 has a larger open-circuit voltage and fill factor than the device without MoO3. Power conversion efficiency of 3.09% was achieved under simulated AM 1.5G illumination of 100 mW/cm2.

Catalysts Based on Supported Metallocenes forα-Olefin Polymerization

The central purpose of this work is to develop and efficient way to attach the metallocene to a support without diminishing its catalytic activity. This article describes several methods to prepare supported EtInd 2 ZrCl 2 (EBI) on MAO/SiO 2 , varying the washing step durations and washing step temperatures. The best method is the one that supports 0.7% Zr on MAO/SiO 2 with a final content of Al near 5.8%. It seems that this method combines high efficiency in MAO usage at the preparation step and high activity in propylene polymerization. The activity of the supported catalysts EBI/MAO/SiO 2 decreases to the third of the soluble catalysts EBI/MAO with the same Al/Zr molar ratio. Zr contents higher than 0.7% produce catalysts with lower productivities. Probably, a MAO coverage on SiO 2 that is higher than a monolayer is not useful in order to stabilize the zirconocene on the MAO/SiO 2 support. This paper reports the kinetics of the supported catalysts and a discussion about the shape of the curves and the stability of the catalysts is appended. The molecular weight of poly(propylene) obtained with supported catalyst increases, especially for the best preparation, comparing it with material obtained with the soluble one. The regioregularity of poly(propylene) increases when a Lewis Base (ethyl benzoate-E.B.) is added as external additive to the system EBI/MAO/SiO 2 and the activity of the supported catalyst is improved.

Head-to-tail regioregularity of poly(3-hexylthiophene) in oxidative coupling polymerization with FeCl3

We investigated a head-to-tail regioregularity of poly(3-alkylthiophenes) from 3-alkylthiophene by an oxidative coupling polymerization, which is the simplest and easiest way for the synthesis of polythiophenes. The polymerizations were conducted using ferric chloride (III) as an oxidant in chloroform. Investigating the polymerization conditions, a lower temperature and a lower concentration were effective for increasing the head-to-tail (HT) content. The best HT content of 88% was obtained when the temperature was −45°C and the initial monomer concentration was 0.02 mol L−1. Washing the resulting polymer by n-hexane further increased the content to 91%. Thus, it was found that the high regioselectivity can be achieved by the simple polymerization and the simple operation such as washing. The polymerization mechanism causing the regularity is also discussed. © 1999 John Wiley & Sons, Inc. J Polym Sci A: Polym Chem 37: 1943–1948, 1999