Abstract
A new buffering layer(nickle oxide thin film) of organic solar cells was presented. The device strcture is Anode/NiO/P3HT[regioregular of poly(3-hexylthiophene)]: PCBM[(6,6)-phenyl C61 butyric acid methyl ester] /Al. Nickle Oxide(NiO) thin film is a good alternative of hole tansporting layer. We investigates the film from physical and electrical aspects, such as morphology, deposition temperature, thickness etc. The best power conversion efficiency of device we got with NiO buffering layer is 2.49%, which is hundred times of ones without NiO buffering layer.We find that the optimum fabrication conditions are: room temperature deposition, 10nm of thickness, and 30% oxygen proportion.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
