Stannous selenide is a layered semiconductor with a puckered honeycomb lattice that constitutes a polar analogue of black phosphorus, and of great interest as a thermoelectric material [1-3]. Hole doped SnSe supports a large Seebeck coefficient at high conductivity. We combine experimental techniques in the form of angle resolved photo-emission spectroscopy, optical reflection spectroscopy and magnetotransport measurements to map out a multiple-valley valence band structure and a quasi two-dimensional dispersion. The quasi two-dimensional dispersion realizes the low-dimensional Hicks-Dresselhaus thermoelectric, which contributes to the high Seebeck coefficient reported at high carrier density [1-2]. We further demonstrate that the hole accumulation layer in exfoliated SnSe transistors exhibits a field effect mobility of up to 250 cm2/Vs at T=1.3 K. Unintentional hole doping and persistent photoconductivity has been observed, suggesting material quality can be further improved. SnSe is thus found to be a high quality, quasi two-dimensional semiconductor.
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