Reduction Of Carrier Concentration Research Articles

Superconductivity in ZrB12 under High Pressure

Transition metal borides have emerged as pivotal players in various fields. In addition to their exceptional properties such as high hardness, a high melting point, and corrosion resistance, certain compounds exhibit remarkable characteristics including superconductivity, magnetism, electrical conductivity, and catalytic activity. Among these compounds, ZrB12 has garnered significant attention due to its unique physicochemical properties. However, previous research on ZrB12 has predominantly focused on its mechanical behavior while overlooking the electron-electron interactions of the superconducting state. In this paper, resistance characterization of ZrB12 under high-pressure conditions was conducted to further investigate its superconductivity. Our research findings indicate that ZrB12 maintains its superconductivity within a pressure range of 0 to 1.5 GPa and is classified as a type 2 superconductor. Additionally, the results confirm the anisotropic nature of ZrB12’s superconductivity. As the pressure increases, the superconducting transition temperature undergoes a gradual decrease. Remarkably, ZrB12 exhibits metallic behavior under pressures up to 31.4 GPa. The observed decline in superconductivity in ZrB12 can be ascribed to the intensified influence of Zr’s movement on phonon dispersion, ultimately leading to a reduction in carrier concentration.

Enhancing the thermoelectric properties of PEDOT:PSS films through the incorporation of g-C3N4 nanosheets and carbon nanotubes

Present study focuses on the synthesis of flexible nanocomposite film made of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS), graphitic carbon nitride (g-C3N4) nanosheets, and carbon nanotubes (CNTs) and how the g-C3N4 nanosheets and CNTs affect the thermoelectric properties of PEDOT:PSS. Incorporating 10 wt% of g-C3N4 nanosheets to PEDOT:PSS improved the Seebeck coefficient to 74.3 μVK−1, ∼5 times higher than the PEDOT:PSS film. However, this led to a decrease in electrical conductivity, limiting the power factor to 335.4 μWm−1K−2. In order to address this, CNTs were added as conductive fillers. The resulting PEDOT:PSS composite, with 10 wt% of g-C3N4 and 10 wt% CNTs, showed a significant power factor of 589.8 μWm−1K−2, an electrical conductivity of 810.6 Scm−1, and a Seebeck coefficient of 84.5 μVK−1, indicating a substantial improvement in the thermoelectric performance of pristine PEDOT:PSS. The increased Seebeck coefficient in the PEDOT:PSS and g-C3N4 composite is due to reduced carrier concentration and energy filtering at the interfaces. The enhancement in electrical conductivity and the Seebeck coefficient after adding CNTs is attributed to the formation of conductive networks, increased mobility, and energy filtering at the interfaces between PEDOT:PSS and CNTs. The study suggests that combining g-C3N4 nanosheets and CNTs with PEDOT:PSS could enhance the thermoelectric performance of PEDOT:PSS-based materials.

Study on the electrical performance degradation mechanism of β -Ga2O3 p-n diode under heavy ion radiation

The impact of heavy ion irradiation on the β-Ga2O3 p-n diode and its physical mechanism have been studied in this Letter. After the irradiation fluence of 1 × 108 cm−2, it is observed that the electrical performance of the device is significantly degraded. The forward current density (JF) is reduced by 49.4%, the reverse current density (JR) is increased by more than two orders of magnitude, and the breakdown voltage (VBR) is decreased by 30%. Based on the results of the deep-level transient spectroscopy measurement, it is concluded that acceptor-like traps generated with an energy level of EC-0.75 eV in the β-Ga2O3 drift layer dominate the JF degradation of the device, which are most likely related to Ga vacancies. These acceptor-like traps result in the reduction of change carrier concentration, which in turn leads to a decrease in JF. In addition, according to the conductive atomic force microscope measurements and theoretical calculation, it is clearly observed that the latent tracks induced by heavy ion irradiation can act as leakage paths, leading to a significant degradation of JR and VBR.

Unusual Electrical Conductivity Enhancement in Stable n-Type Carbon Nanotube Networks.

Organic molecule-doped n-type single-walled carbon nanotube (SWCNT) networks are promising candidates for advanced energy applications, such as flexible thermoelectrics and photovoltaics. Yet charge transport in n-type SWCNTs is limited by two factors: i) charge localization impeding inter-tube transport caused by disordered mesostructure of randomly oriented SWCNTs and ii) reduction of charge carrier concentration driven by oxidation. Herein, studied the relationship between the mesostructure and thermoelectric properties of n-type SWCNTs obtained by surfactant-functionalization and polymer-dopant grafting. Surprisingly, the electrical conductivity of the polymer-doped SWCNTs keeps increasing with increasing polymer content, even after the saturation of carrier concentration, resulting in 12x higher conductivity on polymer-doping compared to surfactant-functionalization. While hopping transport typically dominates in disordered systems, it is shown that a bridging effect from the polymer causes unusual band-like conduction in polymer-doped SWCNTs. Additionally, since surfactants are essential to prevent oxidation and retain n-type over a long duration, shows that SWCNTs obtained through a dual-functionalization strategy using both polymer-dopant and surfactant, demonstrates a long-term stable high n-type thermoelectric power factor, when the surfactant amount is carefully controlled. Besides thermoelectrics, the findings are of general interest to developing stable and conductive n-type SWCNTs for various energy and electronic applications.

Self‐Doped Mixed Ionic‐Electronic Conductors to Tune the Threshold Voltage and the Mode of Operation in Organic Electrochemical Transistors

AbstractOrganic mixed ionic‐electronic conductors with tunable doping, low threshold voltages, and air stability are crucial for bioelectronic applications. A homopolymer based on an alkoxy thiophene monomer and its copolymer with a thiophene carrying ethylene glycol side chains are synthesized and converted to self‐doped conjugated polyelectrolytes, P3HOTS‐TMA+, and P3HOTS‐TMA+‐co‐P3MEEET. The self‐doping occurs during the conversion to polyelectrolytes. Both polyelectrolytes show high electrical conductivity without any external dopants. UV–Vis–NIR spectroscopy and spectroelectrochemistry confirm excellent air stability of the doped state. In an organic electrochemical transistor (OECT), the P3HOTS‐TMA+ operates in depletion mode, while P3HOTS‐TMA+‐co‐P3MEEET exhibits accumulation mode of operation with low threshold voltage, both showing fast response times. On the other hand, the non‐doped homopolymer, P3MEEET, shows a high negative threshold voltage in accumulation mode. Thus, copolymerization with the self‐dopable monomer changes the mode of operation as well as the threshold voltage substantially. Ultraviolet photoelectron spectroscopy reveals a considerable reduction of the hole injection barrier for the self‐doped system P3HOTS‐TMA+. Mott‐Schottky analysis shows reduction in charge carrier concentration in the copolymer compared to the homopolymer. Thus, the copolymerization strategy with a self‐dopable monomer is an efficient tool for tuning the degree of doping leading to low threshold voltage in OECTs.

Carrier gradient core-double shell structure with heterojunction transition layer for significantly enhancing dielectric properties

In this work, to prohibit the undesirable large dielectric loss and electric-field distortion of the conductive fillers/polymer with a high dielectric constant, TiO2 (TO) and Al2O3 (AO) shells were successively coated on the surface of amorphous carbon (C) to prepare the C@TO@AO core-double shell nanoparticles. This novel design of gradually varying the multilayer hierarchical interface achieved the gradient reduction of carrier concentration from the C core to the TO and AO layers. And the introduction of the multilayer hierarchical interface was advantageous to the enhancement of interface polarization. Moreover, the excellent integrated dielectric properties could be effectively achieved by adjusting the layer thickness and crystal structure of the TO layer. It was worth noting that the TO transition layer with anatase and rutile heterojunctions (HTO) had a significant enhancement in the dielectric constant of the composites induced by the strength of interfacial polarization and built-in electric field inside the HTO layer. Furthermore, the simulated electric field distribution inside the composites was further investigated to reveal the mechanism of enhanced dielectric properties. This work exerts important guiding significance for the reasonable structure design and the elaborate regulation of the shell micro-structures to improve the dielectric properties of composites.

Fully atomic layer deposition induced InAlO thin film transistors

The atomic layer deposition (ALD) technique has been extensively utilized for depositing metal oxide (MO) thin films, particularly as gate insulators in thin film transistors (TFTs). However, research on MO semiconductors as channel layer materials in TFTs using ALD is limited, especially for fully ALD-fabricated MO TFTs. In this study, fully ALD-fabricated InAlO TFTs were developed, with optimized aluminum doping content and annealing temperature to enhance the electrical properties and stability. The InAlO TFTs, fabricated with a cycle ratio of 15:1 and annealed at 350 °C, exhibit superior performance, including a field-effect mobility of 7.2 cm2/V·s, a subthreshold swing of 165 mV/decade, and an on/off current ratio of 2.3 × 106, with a threshold voltage of only 0.1 V. Additionally, they demonstrated good stability, with a threshold voltage shift of 0.11 V under positive bias stress. The improved electrical properties and stability are attributed to reduced carrier concentration and the inhibition of oxygen defect generation, achieved through appropriate annealing temperatures and aluminum doping. Thus, the development of fully ALD-fabricated high-performance TFTs holds promise for next-generation display technologies as pixel-driving circuits.

Utilization of doping and compositing strategy for enhancing the thermoelectric performance of CaMnO3 perovskite

The performance of high-temperature thermoelectric material CaMnO3 is primarily limited by its high electrical resistivity and thermal conductivity. In this study, we synergistically optimized its electrical and thermal transport properties by employing a combination of doping and compositing strategies. The results suggest that Yb doping promotes the transfer of electrons to the Mn d orbital and facilitates the double exchange interactions between neighbor Mn3+ and Mn4+, leading to decreased electrical resistivity and a transition of electron transport mechanism from semiconductor to metal. The further addition of CoAl2O4 nanoparticles improves the Seebeck coefficient by reducing carrier concentration and increasing electron scattering, ultimately enhancing the power factor. Meanwhile, the fluctuations in atomic mass and increased interface density strengthen the interface phonon scattering, which results in a significant reduction in lattice thermal conductivity. As a result, the Ca0.95Yb0.05MnO3 with 2 wt% CoAl2O4 nanoparticles exhibits a maximum ZT value of 0.12 at 850 K, representing a 180 % improvement compared to the pristine material. This study highlights the effectiveness of the combined doping and compositing strategy in enhancing the thermoelectric performance of CaMnO3 materials and offers a promising approach for optimizing other oxide thermoelectric materials.

Entropy-assisted low-electrical-conductivity pyrochlore for capacitive energy storage

Capacitors with high energy storage performances are highly desired for the miniaturization, lightweight, and integration of high-end pulse systems. However, the trade-off between dielectric constant and breakdown strength restricts further performance optimization. To improve energy storage properties, a new tactic with rising attention, the high-entropy concept, has been demonstrated to suppress leakage current and enlarge the breakdown strength. However, the mechanisms connecting the insulation properties and entropy are still unclear. Herein, we successfully fabricated a series of entropy-modulated Cd2Nb2O7-based pyrochlore ceramics via the doping of multiple elements, and high-entropy pure pyrochlore was obtained due to the entropy-stabilization effect. Our results revealed that the insulation properties are distinctly enhanced via the enlarged carrier transport barriers and reduced carrier concentration, which should be attributed to entropy-induced large lattice distortion, grain-refining, and fewer defects. The optimized insulation properties significantly enhance breakdown strength from 148 kV cm−1 to 457 kV cm−1. A high energy density of 2.29 J cm−3 with a high energy efficiency of 88% is thus achieved in the high-entropy ceramic, which is 150% higher than the pristine material. This work indicates the effectiveness of high-entropy design in the improvement of energy storage performance, which could be applied to other insulation-related functionalities.

Boosting the thermoelectric properties of layered SnSb2Te4 compound by microstructure regulation combined with heterovalent halogen substitution

The layered IVV2Te4-based compounds have recently received significant attention due to their intrinsically low lattice thermal conductivities. However, the influence of microstructure regulation and halogen doping on their thermoelectric properties has been scarcely studied. In this work, we systematically investigated the anisotropic thermoelectric transport properties of pristine SnSb2Te4 compounds with varied microstructures manipulated by ball milling. With the help of thermoelectric transport models, the optimal ball milling time is estimated based on the calculation of quality factor. Furthermore, the remarkably improved Seebeck coefficient is achieved by the introduction of halogen elements into Te sites, which is attributed to reduced carrier concentration and converged carrier pockets. As a result, a maximal zT ∼0.4 at 725 K is achieved in SnSb2(Te0·94I0.06)4 sample aligned with the SPS pressure direction with a ball-milling time of 1 h, which demonstrates a 35 % enhancement over the pristine sample. This work provides an insightful guide to elevate the thermoelectric properties of layered IVVI2Te4-based compounds.

High Carrier Mobility and Promising Thermoelectric Module Performance of N-Type PbSe Crystals.

The scarcity of Te hampers the widespread use of Bi2Te3-based thermoelectric modules. Here, the thermoelectric module potential of PbSe is investigated by improving its carrier mobility. Initially, large PbSe crystals are grown with the temperature gradient method to mitigate grain boundary effects on carrier transport. Subsequently, light doping with <1mole‰ halogens (Cl/Br/I) increases room-temperature carrier mobility to ~1600cm2V-1s-1, achieved by reducing carrier concentration compared to traditional heavy doping. Crystal growth design and light doping enhance carrier mobility without affecting effective mass, resulting in a high power factor ~40µWcm-1K-2 in PbSe-Cl/Br/I crystals at 300K. Additionally, Cl/Br/I doping reduces thermal conductivity and bipolar diffusion, leading to significantly lower thermal conductivity at high temperature. Enhanced carrier mobility and suppressed bipolar effect boost ZT values across the entire temperature range in n-type PbSe-Cl/Br/I crystals. Specifically, ZT values of PbSe-Br crystal reach ~0.6 at 300K, ~1.2 at 773K, and the average ZT (ZTave) reaches ~1.0 at 300-773K. Ultimately, ~5.8% power generation efficiency in a PbSe single leg with a maximum temperature cooling difference of 40K with 7-pair modules is achieved. These results indicate the potential for cost-effective and high-performance thermoelectric cooling modules based on PbSe.

Mechanism of electrical performance deterioration in a-Si:H TFTs caused by source/drain Decap treatment

During the fabrication process of the display industry, the Decap treatment is usually employed as a means to reuse semiconductor materials of thin film transistors (TFTs), but the influence and mechanism of Decap process on the properties of the decapped samples is unknown. To elucidate this occurrence, the electrical characteristics of the channel layer, as well as the microstructure and components at the interface between the Source/Drain (S/D) and the channel layer were examined. It reveals that the infiltration of impurity ion (O and Mo) has significant impact on the deterioration of device performance for a-Si:H TFTs with a Mo/Al/Mo stacked S/D electrode structure. More specifically, oxygen's intrusion leads to the formation of SiOX and the alterations of the surface energy levels and charge distribution of Si, thus introduces an interface trap states between channel layer and S/D electrodes to scatter and capture of interface carriers. And Mo's intrusion may induce the come into being of MoSi or MoP chemical states, causing the decrease of the doping efficiency of phosphorus and the reduction of carrier concentration (from 5.52 × 1016 cm−3 to 4.44 × 1016 cm−3) of a-Si:H channel layer. The combined effect of these two factors results in the decline of electrical performance of S/D decapped a-Si:H TFTs.

Fabrication of thermoelectric Bi2Te2·5Se0.5 with adjustable porosity

Porous structures have attracted considerable interest for their impact on the transport and mechanical characteristics of materials. The fabrication of porous materials, however, often involves intricate preprocessing steps and typically lacks the ability to tailor porosity with ease. In the present study, we present a straightforward method to prepare porous Bi2Te2·5Se0.5 samples by employing low-pressure spark plasma sintering, with the porosity regulated by preset mass density using a modified graphite mold. This approach resulted in a substantial decrease in thermal conductivity, attributed to the introduction of pores that reduce mass density and disrupt phonon transmission. An accompanying decrease in electrical conductivity was also noted, arising from reduced carrier concentration and mobility. Despite these variations, all porous samples maintained similar levels of thermoelectric performance, with a peak zT of ca. 0.9 at 373 K. The average zT within the temperature range of 298–500 K remained slightly above 0.8 for all samples. Furthermore, the porous samples exhibited greatly enhanced mechanical properties. This work demonstrates a versatile and adaptable method to produce porous materials with controllable porosity, potentially applicable to other porous thermoelectric systems.

Synergistic effect of electrical bias and proton irradiation on the electrical performance of β-Ga2O3 p–n diode

The synergistic impact of reverse bias stress and 3 MeV proton irradiation on the β-Ga2O3 p–n diode has been studied from the perspective of the defect in this work. The forward current density (JF) is significantly decreased with the increase in proton irradiation fluence. According to the deep-level transient spectroscopy results, the increase in the acceptor-like trap with an energy level of EC-0.75 eV within the β-Ga2O3 drift layer, which is most likely to be Ga vacancy-related defects, can be the key origin of the device degradation. The increase in these acceptor-like traps results in the carrier concentration reduction, which in turn leads to a decrease in JF. Furthermore, compared with the case of proton irradiation with no bias, the introduction of −100 V electrical stress induced a nearly double decrease in JF. Based on the capacitance–voltage (C–V) measurement, with the support of the electric field, the carrier removal rate increased from 335 to 600 cm−1. Similar to the above-mentioned phenomenon, the trap concentration also increased significantly. We propose a hypothesis elucidating the synergistic effect of electrical stress and proton irradiation through the behavior of recoil nuclei under the electric field.

Interface‐Enhanced High‐Temperature Thermoelectricity in Cu1.99Se/B4C Composites with Synergistically Improved Mechanical Strength

AbstractDegenerate semiconductors usually demonstrate a metallic‐like conduction behavior, showing limited carrier mobility at high temperatures. Herein, by incorporating B4C nanoparticles into the Cu1.99Se system, an unusual switch from the “degenerate” to “non‐degenerate” semiconducting behavior is revealed as a result of the engineered interfaces. Heterogeneous interfaces and disordered Cu2Se amorphous phases are introduced in the Cu1.99Se/B4C composites, which generate a trapping effect against the mobile Cu ions, leading to a distinctive “hump” signature for electrical conductivity. Benefiting from this rare high‐temperature thermoelectric response, a high power factor is obtained due to reduced carrier concentration and enhanced mobility, and low lattice thermal conductivity is retained because of relatively stronger anharmonic lattice vibrations. Consequently, the Cu1.99Se + 0.9 vol.% B4C sample at least achieves a maximum thermoelectric figure of merit (ZT) of 2.6 at 1025 K with synergistically enhanced mechanical robustness. The present interface engineering strategy may be applicable to other thermoelectric materials with ionic migration characteristics.

Reliability of transparent conductive oxide in ambient acid and implications for silicon solar cells

Transparent conductive oxide (TCO) films, known for their role as carrier transport layers in solar cells, can be adversely affected by hydrolysis products from encapsulants. In this study, we explored the morphology, optical-electrical properties, and deterioration mechanisms of In2O3-based TCO films under acetic acid stress. A reduction in film thickness and carrier concentration due to acid-induced corrosion was observed. X-ray photoelectron spectroscopy and inductively coupled plasma emission spectrometry analyses revealed that TCOs doped with less-reactive metals exhibited enhanced corrosion resistance. The efficiency of silicon heterojunction (SHJ) solar cells with tin-doped indium oxide, titanium-doped indium oxide, and zinc-doped indium oxide films decreased by 10%, 26%, and 100%, respectively, after 200 ​h of corrosion. We also found that tungsten-doped indium oxide could effectively safeguard SHJ solar cells against acetic acid corrosion, which offers a potential option for achieving long-term stability and lower levelized cost of solar cell systems. This research provides essential insights into selecting TCO films for solar cells and highlights the implications of ethylene-vinyl acetate hydrolysis for photovoltaic modules.

High mobility and productivity of flexible In2O3 thin-film transistors on polyimide substrates via atmospheric pressure spatial atomic layer deposition

We fabricate In2O3 films using atmospheric pressure spatial atomic layer deposition (AP S-ALD) and investigate their properties at various temperatures (150 °C–225 °C). As the temperature increased, the growth per cycle (GPC) increases, with the GPC and refractive index reaching values of 1.33 and 2.02, respectively, at 225 °C. The In2O3 thin film indicates a reduction in carrier concentration from 1.53 ± 1.37 × 1021 to 3.09 ± 0.53 × 1020 cm−3 as the temperature increased, and a decrease in the resistance from 3.55 ± 0.07 × 10−3 to 3.70 ± 0.01 × 10−4 Ω∙cm, which is attributed to a decrease in the impurity concentration (150 °C: 1.5 at.%; 175 °C: 1.0 at.%; 200 °C: N/A; 225 °C: N/A) and an increase in crystallinity. We use the In2O3 film as a channel layer in a top-gate bottom-contact thin-film transistor (TG-BC TFT). The device shows excellent performance characteristics, including a field-effect mobility of 69.8 cm2/V·s, a threshold voltage of −0.06 ± 0.22 V, and a subthreshold swing of 0.16 ± 0.01 V/decade. We successfully fabricated high-mobility TFTs and demonstrated their reliability via bias and 50,000 bending tests. The high-performance channel layer of the TFTs fabricated using AP S-ALD are promising for flexible applications.

Elucidating the role of oxygen vacancies on the electrical conductivity of β-Ga2O3 single-crystals

The contribution of oxygen vacancies (VO) to the electrical conductivity of unintentionally doped β-Ga2O3 has been a topic of recent debate. Here, we use a combination of Hall measurements and Raman spectroscopy on as-grown and O2-annealed β-Ga2O3 crystals to investigate the role of VO on electrical conductivity. The annealed samples show a significant decrease in carrier concentration. By comparing the relative Raman shift of individual modes with theoretically calculated contributions of oxygen sites to these modes, we verify the marked reduction of VO in annealed β-Ga2O3 crystals. Furthermore, the IR modes in β-Ga2O3, usually hidden by free carrier absorption, are clearly seen in the annealed sample. The reduction of band tail states as well as free carrier absorption in the annealed samples provides additional evidence for reduced carrier concentration related to VO, making them a key determinant of electrical conductivity in β-Ga2O3.

Enhancing Thermoelectric Performance of CuInTe2 via Trace Ag Doping at Indium Sites.

Thermoelectric technology can be utilized to directly convert waste heat into electricity, aiming at energy harvesting in an environmentally friendly manner. As a promising p-type thermoelectric material, CuInTe2 possesses a high inherent lattice thermal conductivity, which limits the practical implementation in the field of thermoelectricity. Herein, through the combination of vacuum melting and annealing along with hot-pressure sintering techniques, we demonstrated that CuIn0.95Ag0.05Te2 thermoelectric materials with trace Ag doping can exhibit a notably high Seebeck coefficient of 614 μV/K, arising from the high density-of-states effective mass and reduced carrier concentration. Owing to the diminished lattice thermal conductivity derived from Umklapp scattering induced by point defects and dislocation, stemming from the trace Ag doping at In sites rather than Cu sites, CuIn0.95Ag0.05Te2 exhibited a maximum figure of merit (ZT) of 1.38 at 823 K, an 18% enhancement over pristine CuInTe2, leading to a maximum average ZT of 0.67 across temperatures ranging from 303 to 823 K. In essence, our work underscores the efficacy of doping engineering and point defects in tailoring the thermoelectric performance of CuInTe2-based materials. This study not only contributes to advancing the fundamental understanding of thermoelectric enhancement but also lays out a practical pathway toward the realization of high-performance CuInTe2-based thermoelectric materials.

Decreasing the Carrier Concentration of ZrNiSn: An Opposite Way to the Best N-Type Half-Heusler Thermoelectrics.

N-type ZrNiSn-based alloys reach a record thermoelectric figure of merit zT ≈1.2 by increasing the carrier concentration to 4-5 × 1020 cm-3 . In this work, It is reported that a comparable zT can also be realized in trace Ru-doped ZrNiSn-based alloy at even lower temperature by decreasing the carrier concentration. Compared to the previously reported Co doping, the doping of Ru results in a more effective reduction in carrier concentration, and thus higher Seebeck coefficient, lower electronic thermal conductivity, and enhanced thermoelectric performance. The electronic specific heat coefficient of the ZrNi1- x Rux Sn sample remains constant with increasing Ru content, indicating no obvious change in the density of states effective mass. Theoretical calculations show that the doping of Ru has negligible effect on the bottom of conduction band. The lattice thermal conductivity is further reduced by alloying Ti and Hf at the Zr site, and the bipolar diffusion is suppressed by doping of 0.5 at.% Sb. As a result, Ti0.25 Zr0.5 Hf0.25 Ni0.99 Ru0.01 Sn0.995 Sb0.005 reaches not only a zT value of 1.1 at 773 K but also a record average zT value of 0.8 in 300 to 873 K, demonstrating the effectiveness of trace Ru doping on boosting the thermoelectric performance of ZrNiSn-based alloys.