This study reports the sensing mechanism of Pd nanoparticles (PdNPs) decorated n+/n-/n+ double-junction silicon nanobelt (SNB) device as hydrogen (H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) gas sensor. The SNB devices are prepared via CMOS process. Plasma-enhanced atomic layer deposition (PEALD) is adopted for PdNPs deposition as sensing material on the Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> dielectric of SNB devices. The PdNPs-decorated SNB devices working at room temperature are characterized at H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> concentration ranging from 10 to 1000 ppm. Instead of using the traditional steady-state response, the slope of response is presented to estimate concentration and shorten the response time. More than 60% improvement in response time has been achieved for 10 to 1000 ppm H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> detection. To reduce recovery time, device localized Joule heating (DLJH) with a bias of 11 V for 240 s is demonstrated to restore the device back to the baseline. At a bias of 1 V, H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> sensing at room temperature consumes only 68.39 μW.
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