Rectification Behavior Research Articles

Ultrafast reconfigurable direct charge trapping devices based on few-layer MoS2

Abstract Charge trapping devices incorporating 2D materials and high-κ dielectrics have emerged as promising candidates for compact, multifunctional memory devices compatible with silicon-based manufacturing processes. However, traditional charge trapping devices encounter bottlenecks including complex device structure and low operation speed. Here, we demonstrate an ultrafast reconfigurable direct charge trapping device utilizing only a 30 nm-thick Al2O3 trapping layer with a MoS2 channel, where charge traps reside within the Al2O3 bulk confirmed by transfer curves with different gate-voltage sweeping rates and photoluminescence (PL) spectra. The direct charging tapping device shows exceptional memory performance in both three-terminal and two-terminal operation modes characterized by ultrafast three-terminal operation speed (≈300 ns), an extremely low OFF current of 10-14 A, a high ON/OFF current ratio of up to 107, and stable retention and endurance properties. Furthermore, the device with a simple symmetrical structure exhibits VD polarity-dependent reverse rectification behavior in the high resistance state (HRS), with a rectification ratio of 105. Additionally, utilizing the synergistic modulation of the conductance of the MoS2 channel by VD and VG, it achieves gate-tunable reverse rectifier and ternary logic capabilities.

Tunable Rectification in 2D Porphyrinic Metal–Organic Framework Nanosheets Molecular Heterojunctions

AbstractAs functional electrical devices advance, new strategies for regulating electrical properties are essential for achieving diverse electrical performance. In this study, molecular heterojunction rectifiers are constructed by connecting porphyrinic 2D metal–organic framework (2D MOF) nanosheets and oligophenylene thiols self‐assembled monolayers (OPT SAMs) within metal electrodes. The rectification characteristics can be tuned by the molecular length of OPT and the coordinated metal atom in the center of 2D MOFs. Specifically, a rectification ratio of more than 1.67 orders of magnitude is achieved in the heterojunction composed of 2D Zn‐TCPP MOF nanosheet (TCCP, tetrakis(4‐carboxyphenyl) porphyrin) and OPT3 SAM. Combining Kelvin probe force microscopy measurements and first‐principles calculations of the 2D MOF nanosheets, it elucidates that the rectification variations come from the adjustment of energy level alignment at OPT SAMs//2D MOF interface, leading to asymmetric charge transport with the voltage polarities. This strategy can be further extended to Cu‐MOF nanosheets, which also exhibit rectification behaviors when placed on OPT2 SAMs. This work provides a universal and flexible strategy for regulating the electrical behaviors of MOFs without the need for specific design and synthesis, paving the way for the development of MOF‐based functional electronic devices.

Chemical and structural features of spin-coated magnesium oxide (MgO) and its impact on the barrier parameters and current conduction process of Au/undoped-InP Schottky contact as an interfacial layer

This work examines the structural and chemical characteristics of spin-coated magnesium oxide (MgO) on undoped InP (un-InP) and its effects on the barrier parameters and current transport phenomena in the Au/un-InP Schottky contact (SC). Using XRD and XPS, the structural and chemical features of MgO are assessed, confirming that the MgO was deposited on un-InP. The current-voltage (log(I)-V) features were measured for the SC and Au/MgO/un-InP metal/insulator/semiconductor (MIS)-type Schottky contact. The MIS contact revealed an excellent rectification behavior as compared to the SC. The calculated barrier height (Φb) was higher for the MIS contact (0.61 eV) than the SC (0.52 eV), which implies that the MgO interlayer influences the Φb of the SC. The Φb was also estimated using the Cheung’s, Mikhelashvili and Norde procedures, the values are similar, indicating their stability and reliability. The acquired interface state density (NSS) of the MIS contact was less than the SC, proving that the MgO interlayer reduced the NSS. The ohmic behavior was observed in the lower bias region for the SC and MIS contacts, while the trap-free space-charge-limited current (SCLC) was noted in the moderate and upper bias regions of the MIS contact under forward bias. Poole-Frenkel emission (PFE) governs at a lower bias, while Schottky emission (SE) dominates at the upper bias of SC and MIS contacts under reverse bias. These findings demonstrate the potential application of MgO interlayer in advancing electronic devices.

A two-dimensional TaGe2P4–WSi2As4 van der Waals heterojunction: a near-ideal rectifier

Searching for suitable 2D metal-semiconductor interfaces to design high-performance Schottky diodes is essential for the continuous miniaturization of devices. Herein, by using the first-principles calculations, we propose a near-ideal two-dimensional van der Waals rectifier consisting of the monolayer TaGe2P4 metal and the WSi2As4 semiconductor with ultra-clean interface and free dangling bonds. The van der Waals heterojunction has a p-type Schottky contact at both the vertical and lateral interfaces. The Schottky barriers lead to the asymmetry of electronic transport under the positive and negative bias voltages, thus resulting in a remarkable rectification behavior. The rectifying properties can be improved by regulating the length of the semiconductor and the overlapping region, and an ultra-high rectification ratio of 107 is obtained at a low bias voltage. The origin of the rectification effect and the regulating mechanism are explained in terms of the projected local density of states, transmission eigenstates, potential drop, and transmission spectra. It is found that increasing the relative length of the semiconductive part in the device enlarges the width of the Schottky barrier, which largely reduces the reverse current dominated by the electron tunneling. At the same time, little affects the positive current and thus leads to a significant improvement in the rectification performance. These results suggest that the TaGe2P4–WSi2As4 van der Waals heterojunction has promising application as a near-ideal rectifier.

Ferrocene Chalcone Enhanced Cyclotriphosphazene Photodiode Systems via Click Chemistry: Their Synthesis, Electrical, and Photophysical Properties.

In this study, a new ferrocene-decorated cyclotriphosphazene compound (4) was obtained by the interaction of ferrocene chalcone with azide end groups (2) and spirophosphazene (3) bearing alkyne groups using the click method. The structures of all compounds were confirmed using Fourier transform infrared, 1H, 13C APT, and 31P NMR, and MS techniques. The optical band gaps of compounds were measured, showing values of 4.75 eV for 3, 3.53 eV for 2, and 3.46 eV for final product 4. The optical band gap of compound 4 calculated by density functional theory is 3.28 eV. The electrical properties of the compounds were investigated against the frequency. The results showed that the conduction mechanism is based on the hopping model. New types of diodes were prepared by using compounds 2 and 4. The current-voltage characteristics of the compound 4 diode showed good rectification behavior. The rectification ratio of the heterojunction diode was calculated as 629. The ideality factors were 3.35 for 2 and 7.57 for 4. The barrier heights were 0.68 and 0.92, respectively. Under sunlight (20-100 mW/cm2), both diodes exhibited photodiode properties, with compound 4 being more sensitive to light. This indicates that the diodes can be used in optoelectronic devices due to their photoconductive behavior.

Unlocking Nanoprecipitation: A Pathway to High Reversibility in Nanofluidic Memristors.

Solid-state nanochannels have emerged as a promising platform for the development of ionic circuit components with analog properties to their traditional electronic counterparts. In the last years, nanofluidic devices with memristive properties have attracted special interest due to their applicability in, for example, the construction of brain-like computing systems. In this work, an asymmetric track-etched nanofluidic channel with memory-enhanced ion transport is reported. The results illustrate that the formation of nanoprecipitates on the channel walls induces memory effects in ion transport, leading to characteristic hysteresis loops in the current-voltage curves, a hallmark of memristive behavior. Notably, these memristive properties are achievable with a straightforward experimental setup that combines an aqueous solvent and a relatively low-soluble inorganic salt. The various conductance states can be rapidly and reversibly tuned over prolonged time scales. Furthermore, under appropriate measurement conditions, the nanofluidic device can alternate between different iontronic regimes and states, encompassing ion current rectification, ON-OFF states, and memristor-like behavior. These findings provide insights into the design and optimization of nanofluidic devices for bioinspired ionic circuit components.

Light‐State Rectification Behaviors Induced by Interlayer Excitons in Mixed‐Dimensional Single‐Crystalline Perovskite Heterostructures

AbstractStacking different layers into van der Waals heterostructures (vdWHs) provides an attractive approach to integrating intrinsic prominent properties of the constituents. Mixed‐dimensional vdWHs that can interact with external fields are particularly intriguing because they host interlayer excitons (IXs) and thereby exhibiting rich physical phenomena and novel device behaviors. However, previous studies of IXs have primarily focused on TMDs systems, leaving the excitonic phenomena and correlated physics in perovskite heterostructures poorly understood. Here, the 2D‐3D ((BA)2PbBr4‐CsPbBr3) single‐crystalline perovskite vdWHs are designed to discover the modulation effects of IX states on the optical and optoelectronic properties. Interestingly, the vdWHs exhibit a newly emerging IXs emission at 546 nm and an obvious broadening phenomenon in FWHM. The vdWHs‐based photodetectors display novel light‐state rectification behaviors that can change the output photocurrents from fully off states to rectified states after illumination, resulting in a high rectification ratio up to 24342 and an obvious enhanced on/off ratio of 7000. The attractive results are attributed to the presence of IX states, which facilitate carrier hopping at the interfaces. This work establishes mixed‐dimensional single‐crystalline perovskite heterolayers as a highly adaptable platform for exciton research and applications.

Binary colloidal clusters with quantum dots for nanoscopic device applications

Colloidal clusters have garnered significant interest for their ability to elucidate nanoscopic phenomena in atomic arrangements and to enable the fabrication of complex nanostructures for advanced photonic and electronic applications. This study introduces a novel approach using binary colloidal clusters composed of semiconducting quantum dots and conductive gold-coated latex microspheres, fabricated via evaporation-driven self-assembly within emulsion droplets. This configuration not only demonstrates the binary colloidal clusters' capability for self-organization but also highlights the distinct regions formed by the smaller quantum dots, crucial for the electrical functionality of these nanoscopic devices. We have observed diode-like rectification behavior in these binary colloidal clusters, demonstrating their potential as active nanoscopic devices. Our findings present groundbreaking methodologies for integrating semiconductive and conductive materials in a colloidal form, offering a scalable and versatile platform for the development of next-generation devices in photonics and nanoelectronics.

Coupled Thermal and Power Transport of Optical Waveguide Arrays: Photonic Wiedemann-Franz Law and Rectification Effect.

In isolated nonlinear optical waveguide arrays, simultaneous conservation of longitudinal momentum flow ("internal energy") and optical power ("particle number") of the optical modes enables study of coupled thermal and particle transport in the negative temperature regime. Based on exact numerical simulation and rationale from Landauer formalism, we predict generic photonic version of the Wiedemann-Franz law in such systems, with the Lorenz number L∝|T|^{-2}. This is rooted in the spectral decoupling of thermal and particle current, and their different temperature dependence. In addition, in asymmetric junctions, relaxation of the system toward equilibrium shows apparent asymmetry for positive and negative biases, indicating rectification behavior. This Letter illustrates the possibility of simulate nonequilibrium transport processes using optical networks, in parameter regimes difficult to reach in natural condensed matter or atomic gas systems. It also provides new insights in manipulating power and momentum flow of optical waves in artificial waveguide arrays.

Effect of external electric fields on the ionic conductivity of the PET ion-track membrane

Polymeric ion track-etched membranes with asymmetric pores have been the subject of increased interest in both the academia and industry in recent decades. This interest is related to the rectification behavior of the membranes and their possible applications. In this work, the polyethylene terephthalate (PET) membranes with conical ion tracks were investigated for different etching conditions. Thin PET membranes were prepared using irradiated foils etched in a NaOH bath with the help of external electric fields (AC/DC) of a specific polarity. After etching, the I-V characteristics of the membranes were examined in the KCl solutions with different molarities. The obtained results showed that the I-V relations are strongly non-linear, thus confirming the rectification behavior of the membranes. It turned out that the external AC and DC fields applied during etching play an important role. They make it possible to influence the pore etching process, and so the properties of the membranes, which is important for the intended applications. Keywords: polymeric membranes, asymmetric pores, polyethylene terephthalate, I-V characteristics, transport phenomena

Lateral Electronic Junction of a Single Ultrathin Silicon Induced by Interfacial Dipole of Self-Assembled Monolayer.

Interface engineering is pivotal for enhancing the performance and stability of devices with layered structures, including solar cells, electronic devices, and electrochemical systems. Incorporating the interfacial dipole between the bulk layers effectively modulates the energy level difference at the interface and does not significantly influence adjacent layers overall. However, interfaces can drastically affect adjoining layers in ultrathin devices, which are essential for next-generation electronics with high integrity, excellent performance, and low power consumption. In particular, the interfacial effect is pronounced in ultrathin semiconductors, which have a weak electric field screening effect. Herein, the substantial interfacial impact on the ultrathin silicon is shown, the p- to n-type inversion of the semiconductor solely through the deposition of a self-assembled monolayer (SAM) without external bias. The effects of SAMs with different interfacial dipoles are investigated by using Hall measurement and surface analytic techniques, such as UPS, XPS, and KPFM. Furthermore, the lateral electronic junction of the ultrathin silicon is engineered by the regioselective deposition of SAMs with opposite dipoles, and the device exhibits rectification behavior. When the interfacial dipole of SAM is manipulated, the rectification ratio changes sensitively, and thus the fabricated diode shows potential to be developed as a sensing platform.

Vertical Barrier Heterostructures for Reliable and High-Performance Self-Powered Infrared Detection.

With their fascinating properties, emerging two-dimensional (2D) materials offer innovative ways to prepare high-performance infrared (IR) detectors. However, the current performance of 2D IR photodetectors is still below the requirements for practical application owing to the severe interfacial recombination, sharply raised contact resistance, and deteriorated metal conductivity at nanoscale. Here, we introduce a vertical barrier heterojunction with a structure of PtSe2/GaAs that combines the excellent optoelectronic properties of transition metal sulfides with topological semi-metals, which allows for an adjustable bandgap and high carrier mobility. The heterojunction was fabricated using the wet transfer method. The heterostructures show significant rectification behaviors and photovoltaic effects, which allow it to operate as a self-driven photodetector at zero bias. The photoresponse parameters at 850 nm with zero bias voltage are 67.2 mA W-1, 6.7 × 1012 Jones, 9.8%, 3.8 × 105, 164 μs, and 198 μs for the responsivity, specific detectivity, external quantum efficiency, Ilight/Idark ratio, rise time, and fall time, respectively. Moreover, the heterojunction is highly sensitive to a wide spectral band from ultraviolet to near-infrared (360-1550 nm). At the same time, this heterostructure demonstrates significant potential for applications in IR polarized light detection and room-temperature high-resolution IR imaging. The excellent properties of the heterojunction make it well-suited for high-performance, self-powered IR detection.

Facile synthesis and characterization of Cu2Se thin films and self-powered p-Cu2Se/n-Si heterojunction with high-performance photoresponse

A facile, cost-effective, and scalable chemical vapor deposition technique was used to synthesize p-type Cu2Se thin films on glass and n-type Si substrates. Thorough characterization confirmed the films’ β-phase structure with the correct stoichiometric ratio and exceptional crystalline quality, exhibiting behavior akin to a degenerate semiconductor. Measurements unveiled a work function of 4.83 eV and a bandgap of 2.13 eV for Cu2Se. The fabrication of a p-Cu2Se/n-Si heterojunction was achieved by depositing the p-type Cu2Se thin film onto the n-type Si substrate. The resulting heterostructure displayed rectification behavior, and its energy band diagram resembled a Schottky diode. Further exploration into its photoelectric properties showcased the p-Cu2Se/n-Si heterostructure’s favorable self-powered attribute, characterized by fast, steady, reproducible, sensitive, and robust photoresponsive performance. Consequently, it proves highly suitable for applications in high-frequency photodetectors. Additionally, the p-Cu2Se/n-Si heterojunction’s photovoltaic power conversion efficiency exceeded the reported values of the CuO/Si and Cu2O/Si systems. Here, this study contributes significantly to the pivotal evaluation of p-Cu2Se/n-Si heterostructures for promising optoelectronic applications.

Monitoring Enzymatic Reaction Kinetics and Activity Assays in Confined Nanospace.

Enzyme-mediating biotransformations commonly occur in micro- and nanospace, which is crucial to maintain the essential biochemical processes and physiological functions in living systems. Probing enzyme-catalytic reactions in a biomimetic fashion remains challenging due to the lack of competent tools and methodology. Here, we show that studying enzymatic reaction kinetics can be readily achieved by a well-designed solid-state nanopore. Using tyrosine as a classical substrate, we quantitatively characterize the catalytic activity of tyrosinase (TYR) and tyrosine decarboxylase (TDC) in a nanoconfined space. Tyrosine was first immobilized in the nanopipette, wherein the active sites of tyrosine were left unoccupied. When successively exposed to TYR and TDC, a two-step cascade reaction can spontaneously take place. In this process, the surface wettability and charge of the nanopipette stemming from the catalytic products can sensitively regulate ion transport and ionic current rectification behavior, which were monitored by ionic current signal. In this biomimetic scenario, we obtained the enzymatic reaction kinetics of monophenyl oxidase that were not previously actualized in the conventional macroenvironment. Significantly, TYR showed higher enzyme activity, with a Km value of 1.59 mM, which was lower than that measured in a free and open space (with a Km of 3.01 mM). This suggests that tyrosine should be the most appropriate substrate of TYR, thus improving our understanding of tyrosine-associated biochemical reactions. This work offers an applicable technical platform to mimic enzyme-mediated biotransformations and biometabolisms.

Schottky barrier diode and photoelectric device based on two dimensional noble transition-metal sulfides vertical heterojunction

In this work, we use first-principles method to investigate the properties of two-dimensional noble transition-metal sulfides MS2 (M = Ni, Pd, Pt) and the electronic and optoelectronic applications of their vertical heterojunctions. The vertically bilayer or trilayer stacking can modulate the band structures and optical absorption spectra of MS2 (M = Ni, Pd, Pt) obviously. Therefore, we create the atomically thin Schottky barrier diodes (SBD) by vertically stacking the MS2 (M = Ni, Pd, Pt) on monolayer MS2 (M = Ni, Pd, Pt). All SBDs reveal more excellent current rectification behavior along the armchair edge (AE) transport direction than that along the zigzag edge (ZE) transport direction. SBD based on PdS2 bilayer and monolayer heterojunction has the high current value and the significant rectification ratio (exceeding 105) along AE transport direction. The total photocurrent densities of all SBDs along the ZE transport direction are bigger than that along the AE transport direction. SBD based on PdS2 bilayer and monolayer heterojunction has the largest total photocurrent density (1208.07 μA/mm2) along the ZE transport direction. Our work provides foundations for the application of two-dimensional noble transition-metal sulfides in rectification and optoelectronics.

Detailed work function and structural investigations of layered MoO3 onto SiO2 and MoS2 in air

MoS2, its oxides and heterostructures are increasingly utilized in nanoscale opto-electronics and catalysis, where electrical properties such as work function (WF) affect their performance. Herein, a detailed study of the thickness-dependent work function in the case of thermally produced layered Mo oxides onto SiO2 and MoS2 substrates in air is presented. First, the effects of typical contaminants on the mechanically exfoliated MoS2 substrates are investigated. Then, high resolution structural characterization by atomic force microscopy supported by X-ray photoelectron spectroscopy shows that thermal MoS2 oxidation in humid air produces layered amorphous MoO3 with nano-crystallites. Kelvin-probe force microscopy analysis shows that the first MoO3 layer on both substrates is negatively charged and that the MoO3 work function depends on the oxide thickness. The thickness-dependent WF is explained by presence of screened electric field at the MoO3/substrate interface. The negative doping to MoO3 by the studied substrates is confirmed through density functional theory simulations. Moreover, an electrical device from amorphous MoO3 monolayer onto MoS2 is built and shows rectification behavior due to p-type doping of the MoS2 by the oxide layer. Overall, this study provides an insight to understand and manipulate electrical properties of MoO3 and MoO3/MoS2 heterostructures in various devices.

Zigzag boron nitride nanoribbon doped with carbon atom for giant magnetoresistance and rectification behavior based nanodevices

Using the principles of density functional theory (DFT) and nonequilibrium Green’s function (NEGF), We thoroughly researched carbon-doped zigzag boron nitride nanoribbons (ZBNNRs) to understand their electronic behavior and transport properties. Intriguingly, we discovered that careful doping can transform carbon-doped ZBNNRs into a spintronic nanodevice with distinct transport features. Our model showed a giant magnetoresistance (GMR) up to a whopping 105\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^5$$\\end{document} under mild bias conditions. Plus, we spotted a spin rectifier having a significant rectification ratio (RR) of 104\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^4$$\\end{document}. Our calculated transmission spectra have nicely explained why there’s a GMR up to 105\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^5$$\\end{document} for spin-up current at biases of -1.2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$-1.2$$\\end{document} V, -1.1\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$-1.1$$\\end{document} V, and -1.0\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$-1.0$$\\end{document} V, and also accounted for a GMR up to 103\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^3$$\\end{document}–105\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^5$$\\end{document} for spin-down current at biases of 1.0 V, 1.1 V, and 1.2 V. Similarly, the transmission spectra elucidate that at biases of 1.0 V, 1.1 V, and 1.2 V for spin-up, and at biases of 1.1 V and 1.2 V for spin-down in APMO, the RRs reach 104\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^4$$\\end{document}. Our research shines a light on a promising route to push forward the high-performance spintronics technology of ZBNNRs using carbon atom doping. These insights hint that our models could be game-changers in the sphere of nanoscale spintronic devices.

Perfect Spin Filtering, Giant Magnetoresistance, and Rectification Behavior Induced by V‐Doped Zigzag Graphene Nanoribbons

AbstractEmploying the constructs of density functional theory (DFT) and the Nonequilibrium Green's Function (NEGF), the investigation extensively explores the electronic and transport properties of zigzag graphene nanoribbons (ZGNRs) doped with vanadium (V). Notably, this inquiry unveils that strategic doping can transform V‐doped ZGNRs into spintronic nanodevices with distinctive transport attributes. Initially, the simulations showcase remarkably high spin‐filtering efficiencies (SFEs) at certain bias voltages. Furthermore, a giant magnetoresistance (GMR) peaking at 6.87 10 is detected. In conclusion, the examination discerns a spin rectifier that exhibits a significant rectification ratio (RR) of 9.62 10. This research delineates a viable trajectory for the refinement of high‐performance spintronics in ZGNRs via vanadium doping. The implications of this study indicate that the model harbors considerable promise for application in miniature spintronic devices.

Hybrid nanocomposites for enhanced photodetection: Synthesis and application of Ag2O@Graphene/Si heterojunctions

Thin silver oxide graphene (Ag2O@G) nanocomposite films were synthesized via facile spray pyrolysis and integrated into heterojunction architectures with silicon substrate. Structural characterization confirmed the successful anchoring of crystalline Ag2O nanoparticles uniformly over graphene layers with strong interfacial coupling. Optical analysis showed synergistic tuning of the band structure by hybridization, which improves light absorption. Electrical measurements showed rectification behavior of the diode and an increase in photocurrent up to milliamperes under illumination. A response time of 350 ms, a recovery time of 400 ms, stability over repeated cycles and exceptional values such as 0.39 A/W responsivity, 88 % external quantum efficiency and 4×1011 Jones detectivity at 600 nm were achieved. The nanocomposite heterojunctions utilize the superior charge mobility of graphene with the bandgap tuning of Ag2O, enabling efficient light harvesting, photogeneration, and ambipolar charge separation and transport across the multifunctional interface. Customized Ag2O@G heterostructures represent a promising material platform to drive advances in high performance photodetectors, image sensors, night vision devices and photovoltaics through the engineering of morphology, crystallinity and interfaces.

Van der Waals Integration of Large-Area Monocrystalline 3D Perovskite Thin Films on Arbitrary Semiconductor Substrates for Heterojunctions.

Perovskite monocrystalline films are regarded as desirable candidates for the integration of high-performance optoelectronics due to their unique photophysical properties. However, the heterogeneous integration of a perovskite monocrystalline film with other semiconductors is fundamentally limited by the lattice mismatch, which hinders direct epitaxy. Herein, the van der Waals (vdW) integration strategy for 3D perovskites is developed, where perovskite monocrystalline films are epitaxially grown on the mother substrate, followed by its peeling off and transferring to arbitrary semiconductors, forming monocrystalline heterojunctions. The as-achieved CsPbBr3-Nb-doped SrTiO3 (Nb:STO) vdW p-n heterojunction exhibited comparable performance to their directly epitaxial counterpart, demonstrating the feasibility of vdW integration for 3D perovskites. Furthermore, the vdW integration could be extended to silicon substrates, rendering the CsPbBr3-n-Si and CsPbCl3-p-Si p-n heterojunction with apparent rectification behaviors and photoresponse. The vdW integration significantly enriches the selections of semiconductors hybridizing with perovskites and provides opportunities for monocrystalline perovskite optoelectronics with complex configurations and multiple functionalities.