TiO2 incorporated graphitic carbon nitride (g-C3N4) material have sought huge attention in the field of optoelectronic applications. Pristine g-C3N4 and g-TiO2 nanocomposite were prepared via one step calcination method. The nanocomposite formation was confirmed by X-ray diffraction (XRD) and Raman analysis. The uniform distribution of the TiO2 nanoparticles in g-C3N4 was confirmed by Field Emission Scanning Electron Microscope (FESEM). Elemental analysis (C, N, Ti, O) was done by Energy Dispersive X-ray Spectroscopy (EDS). UV–VIS analysis was done to calculate the optical band gap of the nanocomposites. Direct optical band gaps were calculated as 2.85, 3.42 and 2.94 eV for g-C3N4, TiO2 and g-TiO2 nanocomposite, respectively. Photoluminescence intensity was enhanced in g-TiO2 nanocomposite compare to pure g-C3N4 which indicated that the rate of electron-hole (e--h+) recombination in nanocomposite was increased. Thermogravimetric analysis (TGA) was done to investigate the thermal stability of the nanocomposite. After incorporation of TiO2 into the g-C3N4, thermal stability of the nanocomposite was improved. These improved results suggest that nanocomposite is suitable material for an emissive layer in optoelectronic device application.