Recombination Current Research Articles

Dark current in FTO/CZTS interface: a comprehensive comparison of practical Vs theoretical approach using SCAPS-1D

This study investigates the deposition of Cu2ZnSnS4 (CZTS) thin films on fluorine-doped tin oxide (FTO) and soda-lime glass (SLG) substrates using radio frequency (RF) sputtering at varying temperatures. A comprehensive characterization employing multiple analytical techniques was conducted. X-ray diffraction (XRD) analyses confirmed the amorphous nature of CZTS films being deposited up to 200 °C, while higher temperatures promoted increased crystallinity, with the presence of (112) and (220) planes observed at 300 °C and 400 °C. Rietveld refinement using Profex software revealed an increase in crystallite size with deposition temperature for films grown at 300 °C and 400 °C. Optical characterization through UV–vis spectroscopy unveiled a decrease in band gap energy with increasing deposition temperature, while the Urbach energy, associated with defects and imperfections, exhibited an inverse relationship with band gap and temperature. Experimental current–voltage (I-V) measurements using a Keithley source meter showed variations in the ideality factor with deposition temperature. SCAPS-1D simulations were performed to model the FTO/CZTS interface, incorporating experimental parameters. The simulated I-V behavior demonstrated a transition from recombination to diffusion-dominated current above 1.3 V forward bias. Simulations yielded higher ideality factors due to increased contributions from recombination and diffusion currents. Overall, this study provides insights into the growth, structural, optical, and electrical properties of CZTS thin films deposited by RF sputtering, enabling a comprehensive understanding of the FTO/CZTS heterojunction characteristics and their dependence on deposition temperature.

Characterization of rear-side potential-induced degradation in bifacial p-PERC solar modules

Bifacial solar modules are increasingly preferred over monofacial modules to maximize the solar power output within a limited space. Owing to their high efficiency and compatibility with existing production lines, bifacial p-type passivated emitter and rear contact (p-PERC) solar modules have dominated the market since their commercialization. This study analyzes the influence of Al2O3, a passivation layer of p-PERC solar cells, on the PID and its underlying mechanism. Experiments were conducted on bifacial p-PERC module samples to analyze their electrical properties. Additionally, cell-like samples were fabricated to measure characteristics, for example, carrier lifetime, that are difficult to assess in full modules. To accelerate module degradation, experiments were conducted at 85 °C and 85 % humidity, while a voltage of −1000 V was applied to investigate the PID phenomenon. The results reveal degradation at the rear of the module caused by polarization effects, which were confirmed through changes in solar cell parameters and recombination current. The proposed mechanism indicates that the degradation in bifacial p-PERC solar modules is caused by the field-effect deterioration of the Al₂O₃ layer caused by alkali ions diffusing from the glass. This is observed through changes in the carrier concentration within Si and the detection of alkali ions within Al2O3. Our analysis considers both module and cell structure samples to delineate the influence of Al2O3 on the PID, which has not been previously reported. This study enhances the understanding of the polarization effect in bifacial p-PERC solar cells, thus contributing to the advancement of solar cell passivation strategies.

Low dark current Sb-based short-wavelength infrared photodetector

We have theoretically and experimentally demonstrated the feasibility of achieving ultra-low dark current in CpBnn type detectors based on a double-barrier InAs/GaSb/AlSb type-II superlattice. By employing a structure that separates the absorption region and depletion region, the diffusion, recombination, tunneling, and surface dark currents of the photodetector (PD) have been suppressed. Experimental validation has shown that a detector with a diameter of 500 µm at a bias voltage of −0.5 V exhibits a dark current density of 2.5 × 10−6 A/cm2 at the operating temperature of 300 K. The development of PD with low dark current has paved the way for applications with high demands for low noise in the fields of gravitational wave detection and astronomical observation.

Deep-level transient spectroscopy of defect states at p-type oxide/β-Ga2O3 heterojunctions

Defects in p-type oxide/β-Ga2O3 heterojunction diodes were investigated using p-type Cu2O as a case study. Diodes with polycrystalline and epitaxial Cu2O films were analyzed using deep-level transient spectroscopy. For both diodes, two electron bulk defects were detected, including a minority defect at 0.23 eV below EC within Cu2O and a majority defect at 0.53 eV below EC within β-Ga2O3. Furthermore, a high-density interface state of 4.5 × 1012 cm−2/eV was observed in the polycrystalline Cu2O/β-Ga2O3 diode. The presence of a high density of interface states helped reduce the turn-on voltage owing to the interface recombination current. However, it also enabled electron carriers to tunnel through the interface to β-Ga2O3, followed by variable range hopping through the bulk defect in the β-Ga2O3 layer, ultimately causing undesirable premature breakdown. The results of this study underscore the critical role of optimizing the crystal structure during p-type oxide growth for desired defect characteristics, particularly concerning interface states, in β-Ga2O3 bipolar devices for different applications, offering insights for high-performance power rectifier development.

Contactless edge for edge recombination optimization in solar cell

AbstractAs the conversion efficiency of solar cell approaching its theoretical limits, reducing the power loss during the collection and transmission process is a promising way to improve the performance of solar cell. Cleaved edges create recombination centers, causing up to 0.8%abs (absolute efficiency) of power loss or even more for 156 × 156 mm silicon solar cell. Due to the complexity of edge passivation technique, alternative methods are desired. This article proposes a method to minimize this problem. It is found that most of the recombination current of edge comes from the recombination near the contact and the space charge region (SCR). As a result, keeping the cleaved edge a certain distance away from the contacts and SCR can improve performance effectively. On the other hand, contactless edge can reduce the recombination from the SCR without extra manufacturing difficulty. The results indicate the edge recombination loss can be reduced to less than 0.4%abs after the distance is optimized appropriately.

Comparison of type II superlattice InAs/InAsSb barrier detectors operating in the mid-wave infrared range

Four types of barrier detectors based on a type II InAs/InAsSb superlattice with a wide-gap barrier made of a solid AlInAsSb lattice matched to the GaSb buffer were compared. The tested detectors differed in the type of doping of the active layer and the level and type of doping of the contact layer at the barrier. The epitaxial layers were deposited on GaAs (100) substrates using the molecular beam epitaxy method. The spectral and current–voltage characteristics of the analyzed detectors were compared. The highest current responsivities were observed in the structure with a p-type absorber (p+BpN+). Detectors with an n-type absorber (p+Bnn+, n+Bnn+, and nBnn+) show an increase in the current responsivity with an increase in the reverse bias voltage due to the reduction in the undesirable barrier in the valence band. Arrhenius characteristics for the dark current show that only in nBnn+ detectors, it was possible to limit the generation–recombination current. These detectors at 150 K were characterized by the highest normalized detectivity of approximately 3 × 1011 cm · Hz1/2/W. The obtained results were compared with literature data, showing that the parameters of type II superlattice photodetectors are close to those of HgCdTe photodiodes according to the “Rule 07” and “Rule 22” principles.

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Indoor photovoltaics suffer from non‐radiative recombination and parasitic leakage current especially due to low carrier density. Incorporating a porous alumina interlayer in perovskite photovoltaics mitigates non‐radiative recombination and parasitic leakage current, enhancing efficiency under low‐light indoor conditions. This strategy is demonstrated in large‐area modules at 23.03 cm2, achieving 33.5% efficiency and 107.3 µW/cm2 power density under LED 1000 lux.image

Controlled growth of uniform and dense perovskite layers on SnO2 via interface passivation by PbS quantum dots

AbstractFormamidinium lead iodide (FAPbI3) and SnO2 are a promising pair of halide perovskite and electron transport layer (ETL). However, FAPbI3 and SnO2 have inherent problems such as high crystallization temperature of FAPbI3 and surface defects of SnO2 like oxygen vacancies. They cause low crystallinity, non‐uniform grain growth, and more interface defects, leading to carrier recombination and leakage current. The passivation of the interface between FAPbI3 and SnO2 is an effective process to address these materials issues. Herein, a dual role of lead sulfide (PbS) quantum dots (QDs) in the interface passivation is explored. PbS QDs which are introduced to the interface between FAPbI3 and ETL, link to Sn‐dangling bonds of SnO2 ETLs and anchor the iodine atoms of FAPbI3. This changes considerably lower nonradiative recombination, achieve a better energetic alignment between ETL and PbI3, and facilitate electron extraction, leading to a power conversion efficiency of 21.66%.image

Performance simulation of the perovskite solar cells with Ti3C2 MXene in the SnO2 electron transport layer

MXenes, a class of two-dimensional (2D) transition metal carbides and nitrides, have a wide range of potential applications due to their unique electronic, optical, plasmonic, and other properties. SnO2–Ti3C2 MXene with different contents of Ti3C2 (0.5, 1.0, 2.0, 2.5 wt‰), experimentally, has been used as electron transport layers (ETLs) in Perovskite Solar Cells (PSCs). The SCAPS-1D simulation software could simulate a perovskite solar cell comprised of CH3NH3PbI3 absorber and SnO2 (or SnO2–Ti3C2) ETL. The simulation results like Power Conversion Efficiency (PCE), Open circuit voltage (VOC), Short circuit current density (JSC), Fill Factor (FF), and External Quantum Efficiency (EQE) have been compared within samples with different weight percentages of Ti3C2 MXene incorporated in ETL. Reportedly, the ETL of SnO2 with Ti3C2 (1.0 wt‰) effectively increases PCE from 17.32 to 18.32%. We simulate the role of MXene in changing the ideality factor (nid), photocurrent (JPh), built-in potential (Vbi), and recombination resistance (Rrec). The study of interface recombination currents and electric field shows that cells with 1.0 wt‰ of MXene in SnO2 ETL have higher values of ideality factor, built-in potential, and recombination resistance. The correlation between these values and cell performance allows one to conclude the best cell performance for the sample with 1.0 wt‰ of MXene in SnO2 ETL. With an optimization procedure for this cell, an efficiency of 27.81% is reachable.

Variability of temperature on the electrical properties of heterostructured CIS/Cds through SCAPS simulation for photovoltaic applications

Renewable energy research has received tremendous attention in recent years in a quest to circumvent the current global energy crisis. This study carefully selected and simulated the copper indium sulfur ternary compound semiconductor material with cadmium sulfide owing to their advantage in photovoltaic applications. Despite the potential of the materials in photovoltaic devices, the causes of degradation in the photovoltaic efficiency using such compound semiconductor materials have not really been investigated. However, electrical parameters of the materials such as open circuit voltage, short circuit current density, and fill factor have been extensively studied and reported as major causes of degradation in materials’ efficiency. Furthermore, identifying such electrical characteristics as a primary degradation mechanism in solar cells, this study work is an ardent effort that investigates the materials' electrical behavior as a cure to the degradation associated with compound semiconductor-based photovoltaic. In this study, we numerically characterized the electrical properties such as fill factor, open circuit voltage, short circuit current density, power conversion efficiency, net recombination rate, net generation rate, generation current density, recombination current density, hole current density, electrons current density, energy band diagram, capacitance–voltage, electric field strength of the heterostructured CIS/CdS compound semiconductor material using SCAP-1D. We also investigated the effect of temperature on the electrical properties of heterostructured materials. The obtained results reveal the uniformity of the total current density in the material despite the exponential decrease in the electron current density and the exponential increase in hole current density. The extracted solar cell parameters of the heterostructured CIS/CdS at 300 K are 18.6% for PCE, 64.8% for FF, 0.898 V for Voc, and 32 mA cm−2 for Jsc. After the investigation of the effect of temperature on the CIS/CdS compound semiconductor material, it was observed that the solar cell was most efficient at 300 K. The energy band gap of the CIS/CdS compound semiconductor material shrinks with an increase in temperature. The highest net recombination rate and recombination current is at 400 K, while the net generation rate and generation current density are independent of temperature. The study, on the other hand, gave insights into the potential degradation process, and utilizing the study’s findings could provide photovoltaic degradation remediation.

A novel thermoelectrical model for dye-sensitized solar cells for consideration of the effects of solar irradiation, wavelength, and surface temperature

The present study aims to provide an innovative model to simulate the behavior of dye-sensitized solar cells, considering their advantages and the emerging technology of cells. The new model uses carrier particle continuity equations and the Butler-Volmer equation to examine the effects of solar radiation, wavelength, and temperature on cell performance. Power Conversion Efficiency (PCE) is studied for sunny and cloudy days (7 am to 6 pm) based on input and output power. Parametric changes, including fill factor, open circuit voltage, and short circuit, are calculated in this regard. The good agreement observed between the outcomes of previous studies and the results obtained here emphasizes the reliability of the proposed model. As a striking novelty, the impact of transparent conductive oxide (TCO) recombination current on cell performance parameters is also examined using the Butler-Volmer equation under normal and diffuse radiation (low light). The results reveal that the effect of recombination current is more significant for diffuse radiation conditions than the clear sky (sunny day). For example, the efficiency and voltage drop are higher for the cloudy mode. The sunny weather has a reduction of about 0.2 % in efficiency, while the same state for the cloudy weather is about 1.8 %.

Back-surface electric field passivation of CdTe solar cells using sputter-deposited CdSe

CdTe back-surface passivation is one of the effective ways to enhance device performance. In recent years, the role of Se passivation in high performance CdSeTe thin film solar cell device has received increasing attention. However, current high-efficiency devices only have a considerable concentration of Se at the very front of the device, while most of the area on the back side of the absorber layer is not passivated by Se. This means that further efficiency improvements may be possible if more defects on the back surface of the absorber layer are passivated by Se, while maintaining the built-in field. Here, based on the magnetron sputtering process, chemical passivation and electric field passivation can be achieved when a small amount of CdSe is deposited on the CdTe back surface. When the CdSe thickness is ∼20 nm (Before annealing), the optimal cell current was increased from 23.8 mA/cm2 to 26 mA/cm2 and the efficiency was increased from 13.1% to 15.5%. External quantum efficiency and impedance spectroscopy measurements indicate that the performance improvement is due to the reduction of the interfacial recombination current on the back surface.

Enhanced Carrier Collection in Cd/In-Based Dual Buffers in Kesterite Thin-Film Solar Cells from Nanoparticle Inks.

Increasing the power conversion efficiency (PCE) of kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells has remained challenging over the past decade, in part due to open-circuit voltage (VOC)-limiting defect states at the absorber/buffer interface. Previously, we found that substituting the conventional CdS buffer layer with In2S3 in CZTSSe devices fabricated from nanoparticle inks produced an increase in the apparent doping density of the CZTSSe film and a higher built-in voltage arising from a more favorable energy-band alignment at the absorber/buffer interface. However, any associated gain in VOC was negated by the introduction of photoactive defects at the interface. This present study incorporates a hybrid Cd/In dual buffer in CZTSSe devices that demonstrate an average relative increase of 11.5% in PCE compared to CZTSSe devices with a standard CdS buffer. Current density-voltage analysis using a double-diode model revealed the presence of (i) a large recombination current in the quasi-neutral region (QNR) of the CZTSSe absorber in the standard CdS-based device, (ii) a large recombination current in the space-charge region (SCR) of the hybrid buffer CZTSSe-In2S3-CdS device, and (iii) reduced recombination currents in both the QNR and SCR of the CZTSSe-CdS-In2S3 device. This accounts for a notable 9.0% average increase in the short-circuit current density (JSC) observed in CZTSSe-CdS-In2S3 in comparison to the CdS-only CZTSSe solar cells. Energy-dispersive X-ray, secondary-ion mass spectroscopy, and grazing-incidence X-ray diffraction compositional analysis of the CZTSSe layer in the three types of kesterite solar cells suggest that there is diffusion of elemental In and Cd into the absorbers with a hybrid buffer. Enhanced Cd diffusion concomitant with a double postdeposition heat treatment of the hybrid buffer layers in the CZTSSe-CdS-In2S3 device increases carrier collection and extraction and boosts JSC. This is evidenced by electron-beam-induced current measurements, where higher current generation and collection near to the p-n junction is observed, accounting for the increase in JSC in this device. It is expected that optimization of the heat treatment of the hybrid buffer layers will lead to further improvements in the device performance.

On the Robustness of the Determination of Metal‐Induced Recombination from Photoluminescence Images on Solar Cells

The robustness of a recently developed method to obtain the recombination current–density (J0,met) under the front metallization fingers of silicon solar cells is investigated. This method requires a voltage‐calibrated photoluminescence (PL) imaging setup and can be applied on finished solar cells without any dedicated sample preparation. The Fourier‐transform photoluminescence method (FTPL) compares the Fourier spectrum of a PL image with an analytical model to deduce J0,met. It is demonstrated here, from sensitivity analysis, repeated measurements, and case studies, that the method allows to differentiate groups of solar cells having undergone different metallization conditions. Moreover, the comparison of the FTPL method with I–V measurements and with the area‐weighted approach for the J0,met determination shows similar results. Finally, using Quokka modeling, some limitations of the method are identified, and opportunities for improvement are proposed to further enhance this characterization technique.

Novel polysilicon in resisting thermal-evaporation Al-electrode damage and its application in back-junction passivated contact p-type solar cells

In preparing tunnel oxygen passivation contact (TOPCon) solar cells, the metallization process often causes damage to passivation performance. Aiming to solve the issue, we investigated the advantages of the novel polysilicon, i.e. the carbon (C) or nitrogen (N) doped polysilicon, in resisting metallization damage. Our study reveals that C- or N-doped polysilicon does mitigate the passivation damage caused by the physical-vapor deposition metallization processes, i.e. the decrease in implied open-circuit voltage (iV oc) and the increase in recombination current (J 0) are both suppressed. For the novel polysilicon samples suffered metallization, the decrease of iV oc was only ∼−1 mV, and the increase of J 0 < 1 fA cm−2; in contrast, the decrease of iV oc of the standard polysilicon samples was −7 mV, and the increase of J 0 was ∼6 fA cm−2. In addition, we also explored the difference between the finger-metal and the full-metal metallization, showing that the finger-metal has less passivation damage due to the smaller contact area. However, the free energy loss analysis indicates that the advantage of the novel polysilicon in resisting metallization damage is overshadowed by the disadvantage of the higher contact resistivity when finger-metal electrodes are used. Numerical simulations prove that the efficiency of the solar cell with novel polysilicon still shows >0.2% absolute efficiency higher than that with the standard polysilicon, reaching 26% when full-metal electrodes by thermal evaporation.

Impact of Interface Energetic Alignment and Mobile Ions on Charge Carrier Accumulation and Extraction in p‐i‐n Perovskite Solar Cells

AbstractUnderstanding the kinetic competition between charge extraction and recombination, and how this is impacted by mobile ions, remains a key challenge in perovskite solar cells (PSCs). Here, this issue is addressed by combining operando photoluminescence (PL) measurements, which allow the measurement of real‐time PL spectra during current–voltage (J–V) scans under 1‐sun equivalent illumination, with the results of drift‐diffusion simulations. This operando PL analysis allows direct comparison between the internal performance (recombination currents and quasi‐Fermi‐level‐splitting (QFLS)) and the external performance (J–V) of a PSC during operation. Analyses of four PSCs with different electron transport materials (ETMs) quantify how a deeper ETM LUMO induces greater interfacial recombination, while a shallower LUMO impedes charge extraction. Furthermore, it is found that a low ETM mobility leads to charge accumulation in the perovskite under short‐circuit conditions. However, thisalone cannot explain the remarkably high short‐circuit QFLS of over 1 eV which is observed in all devices. Instead, drift‐diffusion simulations allow this effect to be assigned to the presence of mobile ions which screen the internal electric field at short‐circuit and lead to a reduction in the short‐circuit current density by over 2 mA cm−2 in the best device.

Analytic Efficiency Optimization of Solar Cells under Light Concentration in the Framework of the Single‐Diode Model

Herein, concentrating solar cells are modeled with two recombination active contacts and a recombination active light absorber in the framework of the one‐diode model. The two contacts and the absorber contribute to a lumped series resistance and to a lumped recombination current. It is proven that varying the light concentration can be interpreted as iso‐selectivity scaling of the cell's resistance and the cell's recombination. As a consequence of that, the optimal efficiency of a concentrator cell is found at maximum combined selectivity of the two contacts and the absorber. Herein, analytic formulas are derived that calculate the optimal contact areas and the optimal light concentration level for achieving an optimum efficiency. The resulting formulas express the efficiency in terms of the selectivities of each contact and the selectivity of the absorber. These equations are used to calculate the optimum contact area fractions and the optimum light concentration level for Si solar cells of various material qualities with screen‐printed Al‐doped contacts and n‐type poly‐Si contacts on oxide. The efficiency results of the novel analytic and a conventional numeric optimization agree to the expected level of accuracy.

Improved Device Performance and Stability in Organic Solar Cells by Morphology Control via Size‐Controlled Chevron‐Shaped Blades

Organic solar cells (OSCs) have been studied widely as renewable energy resources for a few decades owing to their technological advantages, including low cost, light weight, flexibility, and the potential of large area printing. To upgrade the active layers of OSCs into an optimized form, a simple and straightforward strategy is demonstrated by introducing two types of size‐controlled chevron (V)‐shaped blades to delicately control PM6:Y6‐based bulk heterojunction (BHJ) films under ambient conditions. A power conversion efficiency of 15.97% is achieved from the blade‐coating methods using a small‐sized V‐shaped blade (V1), compared with 14.31% using a conventional flat blade (F). Using blade coating based on V1 improves the phase separation and molecular crystallinity in the active layer, which lead to decreased trap‐assisted recombination and leakage current, finally increasing the short circuit current and fill factor. In addition, following these morphological changes in the optimal BHJ structure, the devices printed with V1 exhibit higher stability in the long‐term shelf‐life test (320 h storage in ambient conditions). Notably, strategy is a facile layer fabrication method that adopts V‐shaped blades to achieve high device performance and stability for the practical use of large‐area OSCs.

Second-stage potential-induced degradation of n-type front-emitter crystalline silicon photovoltaic modules and its recovery

We investigate the second-stage potential-induced degradation (PID) of n-type front-emitter (n-FE) crystalline silicon (c-Si) photovoltaic (PV) modules. The PID of n-FE c-Si PV modules is known to occur in three stages under negative bias stress. The second-stage PID is characterized by a reduction in fill factor (FF), due to the invasion of sodium (Na) into the depletion region of a p+–n junction and the resulting increase in recombination current. The second-stage PID shows a curious independence from a negative bias voltage for the PID stress. This may indicate that the Na inducing the FF reduction comes not from the cover glass but originally existed on and/or near the cell surface. The FF reduction is recovered quite rapidly, within a few seconds, by applying a positive bias to the degraded cell. The recovered n-FE c-Si PV modules show more rapid degradation if they receive the negative bias stress again, which can be explained by Na remaining in the p+ emitter.

Additive-Induced Synergies of Ion Migration Inhibition and Defect Passivation toward Sensitive Perovskite X-ray Detectors

Two-dimensional (2D) Ruddlesden-Popper (RP) metal halide perovskites have emerged as a promising material for X-ray detection. However, defects and ion migration generated nonradiative recombination and high dark current could cause severe performance degradation, which hinders their application. Herein, rubrene was added to the precursor solution of BA2MA3Pb4I13 to modulate the performance of the 2D RP perovskite X-ray detectors. The cation-π interaction between rubrene and perovskite could passivate the defects and inhibit the ion migration, resulting in improved performance and stability. The detectors made with rubrene exhibited a sensitivity of 354.30 μC·Gyair-1 cm-2 and a detection limit of 112.85 nGyair s-1. This work highlights the synergistic effect of rubrene in defect passivation and ion migration inhibition, providing a facile approach toward sensitive perovskite X-ray detectors.