Rear Facet Research Articles

Mode-hop-free tunable high-power distributed feedback laser with adaptable rear facet phase shift section emitting at 780 nm.

We present a high-power ridge waveguide distributed feedback (DFB) laser with a high-reflective coating and a phase shift section at the rear facet. The phase shift section is realized by means of a micro heater that is placed parallel to the ridge waveguide and the uniform grating. This type of heater section is easy to integrate into existing laser designs and allows adjusting and controlling the spectral behavior of the distributed feedback laser by shifting the rear facet phase condition, which makes it possible to overcome the challenges of mode-hop-free tuning of regular DFB lasers with highly reflective cleaved rear facet. Accordingly, we use the device to quantify rear facet phase conditions where mode hops occur, which are compared to theory with good agreement.

Polarization-sensitive optical coherence tomography for birefringence measurement of calcite nonlinear uniaxial crystal

We report on the new application, to the best of our knowledge, of a time-domain optical coherence tomography (TD-OCT) device used to measure the ordinary n o and extraordinary n e indices of calcite birefringence crystal at room temperature. A 1.25±0.05mm thick slab of calcite crystal is cut, polished, and used as a sample in the OCT arm. While the calcite slab is axially scanned, the raw carrier ordinary signals that came from its front and rear facets are received and denoised with a set of digital filters. The extraordinary signals are generated by the change of beam polarization using a 90°-rotating polarizer plate. It is found that the wavelet transform is capable of reaching the highest signal-to-noise ratio (SNR) of about 24.50 and 23.91 for denoising the ordinary and extraordinary signals, respectively. Quantitative measurement of n o and n e is carried out by extracting a desired envelope from the denoised signals using standard methods. Average values of 1.660 and 1.444 are obtained for n o and n e , respectively, using the wavelet-denoised signals. The weights of the results are finally searched with ones obtained from two sets of dispersion equations. We found a very good agreement between the wavelet-denoised OCT- and dispersion equation-based values with a very low relative differences of 0.04% and 2.8% for n o and n e , respectively, when the Ghosh equation is used and averaged ones of 1.3% and 4.2% for n o and n e , respectively, when the Zhao et al. equation is applied.

Quantification of losses in bent waveguides within DBR-RW laser diodes emitting at 785 nm

An experimental study of straight and bent distributed Bragg reflector (DBR) ridge waveguide (RW) lasers and Fabry–Pérot (FP) RW lasers emitting at 785 nm is presented. To determine the losses introduced by the bent waveguides within DBR-RW lasers, different laser designs were manufactured and characterized. The bent waveguides investigated here within DBR-RW laser diodes are sine-shaped S-bends. S-bends with three different lateral offsets are manufactured. The experimental characterization of FP lasers and the straight DBR-RW lasers with different coatings at the rear facet enables a rough estimation of the losses caused by the DBR grating and the determination of the DBR reflectivity. Furthermore, additional losses in the bent DBR-RW lasers caused by the S-bend (i.e. radiation and scattering losses) are quantified by comparing them to the straight DBR-RW lasers. Within the active resonator, the S-bend losses amount to α Bend = 0.6 cm−1 (α Bend = 0.5 dB) for the smallest manufactured lateral S-bend offset H = 40 μm. For both straight and bent DBR-RW lasers spectrally narrow single-mode emission is obtained. A lateral beam width of 3.8 μm (using second moments) and a lateral far-field angle of about 18° and 19.5° (using second moments) for the straight and S-bend DBR-RW are measured, respectively. This gives a lateral beam propagation ratio of 1.2 and 1.3 (using second moments) for straight and S-bend DBR-RW, respectively. The radiation loss in dependency of the lateral S-bend offset is simulated and compared to experimentally estimated S-bend losses for bent DBR-RW lasers (H = 40 μm, H = 60 μm and H = 70 μm).

Improvement on stability of direct modulation laser with integrated active feedback by partial corrugated gratings.

Researchers have developed a uniform grating DFB with an integrated active optical feedback waveguide (UG-AFDFB) to enhance the modulation speed of direct modulation lasers (DMLs) while reducing costs based on identical active layer designations. However, this design has difficulties in obtaining high single mode yield (SMY) and low relative intensity noise (RIN) as a result of the strong optical feedback caused by the integrated active feedback waveguide (AFW) and the random phase of the facet phase. In this paper, a partial corrugated grating DFB with an integrated active optical feedback waveguide (PG-AFDFB) is proposed to address this issue. Comparison of SMY, S21, RIN, modulation eye pattern, and frequency chirp parameters between UG-AFDFB and PG-AFDFB based on time-domain transmission line laser mode reveals that PG-AFDFB with an optimized grating couple parameter κ performs significantly better than UG-AFDFB under the same conditions. Furthermore, the performance of PG-AFDFB is not sensitive to the random phase of the rear facet phase. Even when κ ranges from 6000 /m to 12000 /m, the current in the AFW is between 0 mA and 20 mA, and the length of the AFW ranges from 50 µm to 100 µm; the SMY of PG-AFDFB remains above 80%.

High power GaSb-based superluminescent diode with cascade cavity suppression waveguide geometry and ultra-low antireflection coating

We report on a GaSb-based superluminescent diode optimized for high-power broadband operation around a wavelength of 2 μm. The high optical power was achieved by the high-quality epitaxial InGaSb/AlGaAsSb type-I quantum well gain material, which was processed into a double-pass amplification configuration. To prevent lasing at high current injection while enabling strong amplified spontaneous emission, a cascade cavity suppression waveguide geometry was designed to connect the vertical rear facet with the reflectivity-suppressed angled front facet. A Ta2O5/SiO2 ultra-low antireflection coating with a minimum reflectivity of 0.04% was applied to the front facet for further cavity suppression. This combination allowed the superluminescent diodes to demonstrate a record high single-transverse-mode output power of up to 152 mW under continuous-wave operation at room temperature, with a broad spectral band of 42 nm full width at half maximum. A 25% promotion in optical power has been realized compared to current state-of-the-art devices in this wavelength range, without sacrificing spectral bandwidth. The high-power spectral density characteristics, along with a good beam quality, are well suited for absorption spectroscopy applications and hybrid integration with silicon technology.

Experimental and theoretical studies into longitudinal spatial hole burning as a power limit in high-power diode lasers at 975 nm

Spatial-hole-burning as a limit to the continuous-wave (CW) output power of GaAs-based diode lasers is experimentally studied. For 90 μm stripe lasers with 6 mm resonator length and 0.8% front facet reflectivity, spontaneous emission (SE) intensity data show that the carrier density in the device center rises rapidly at the rear facet with bias and falls at the front, consistent with simulation. At the front, the carrier density at the edge of the laser stripe also rises rapidly with bias (lateral carrier accumulation, LCA), consistent with previous observations of increased local current flow. Devices with 20% front facet reflectivity for a flat longitudinal optical field profile show smaller variation in the local carrier density. Weak variation is seen in the carrier density outside the stripe; hence, current spreading is not a power limit. SE wavelength data show higher temperatures at the front with a twofold higher increase in temperature for 0.8% than for 20% front facet. The increased front temperature likely triggers lateral spatial-hole-burning and LCA in this region, limiting power. Finally, pulsed threshold current is more strongly temperature dependent for devices with 0.8% than 20% front facets, attributed to the higher rear facet carrier density. The temperature dependence of slope in pulsed is comparable for both devices at low bias but is more rapid for 0.8% at 20 A, likely due to non-clamping at the back. The temperature dependence of slope for CW is strong with 0.8% facets, likely due to the high temperature and LCA at the front but reduced for 20% facets.

Spectral behavior of high-power distributed feedback lasers

The mode hopping behavior of high-power distributed feedback lasers emitting near 780,hbox {nm} is studied. The lasers have highly reflective rear and anti-reflection coated front facets. The influence of the phase of the grating at the rear facet is investigated by means of numerical simulations in the time domain taking into account spatial hole burning and self-heating effects. The simulation results are in agreement with experimental findings.

Влияние фокусировки на нестационарное ВКР 0.3 ps лазерных импульсов в кристалле BaWO-=SUB=-4-=/SUB=- с самозаправкой ФСМ

The effect of focusing, taking into account self-focusing, on the interference of SRS (stimulated Raman scattering) and self-phase modulation in a 8-mm BaWO4 crystal pumped by laser pulses with a duration of 0.3 ps and a wavelength of 515 nm is experimentally studied. The maximum efficiency of SRS conversion (~23%) to the Stokes component of the ν1 = 925 cm–1 strongest mode is obtained with a lens with a focal length of 40 mm at the linear focus shift towards the rear facet of the crystal. The increase in efficiency, when the linear focus is shifted to the rear facet, is associated with an increase in the distance between the linear and nonlinear foci, which results in an increase in the effective length of the nonlinear interaction.

High-power distributed feedback lasers with high-order surface curved gratings.

A novel, to the best of our knowledge, broad-area distributed feedback laser with high-order surface curved gratings has been fabricated based on standard near ultraviolet lithography. The characteristics of increasing output power and mode selection are achieved simultaneously by using a broad-area ridge as well as an unstable cavity structure composed of curved gratings and a high-reflectivity coated rear facet. Suppression of high-order lateral modes is realized by setting current injection/non-injection regions and asymmetric waveguides. This DFB laser emitting around 1070 nm has achieved a spectral width of 0.138 nm and a maximum output power of 915 mW kink-free optical power. The threshold current and side-mode suppression ratio of the device are 370 mA and 33 dB, respectively. The simple manufacturing process and stable performance give this high-power laser broad application prospects in the fields of light detection and ranging, laser pumps, optical disk access, etc.

Improvement on Direct Modulation Responses and Stability by Partially Corrugated Gratings Based DFB Lasers With Passive Feedback

DFB lasers with ultrashort cavities or integrated DFB lasers with passive waveguide reflectors are frequently proposed to realize directly modulated lasers (DMLs) for carrying ultrahigh data rate signals. The former suffers from poor heatsink and laser cleavage yield, while the single-mode stability of the latter scheme is seldom addressed. The mode selection and device performance of a DFB laser is well known to be very sensitive to the facet reflection and external optical feedback. The DFB lasers with partial corrugated gratings and passive feedback (PCG-PFL) are proposed here to overcome the challenging issues for the aforementioned two schemes. With PCG structure, the DFB lasers can maintain high single-mode yield (SMY) even with a high-reflection-coating on the rear facet and strong reflection from the integrated passive section. This provides the robustness in applying the integrated passive reflector to reshape the modulation response or to enhance the 3-dB bandwidth by using the photon-photon resonance (PPR) effect. By designing the PCG-PFL to have 150-μm long laser section, 50-μm long passive section, and 30% front-facet reflectivity, it can have about 86% of SMY, reduced resonant peak in the intensity modulation response, and reduced waveform overshoot and undershoot for transmitting 56-Gbaud/s PAM-4 signals. By using a longer passive reflector, enhanced bandwidth can be achieved by the PPR effect.

Spatial filtering in edge-emitting lasers by intracavity chirped photonic crystals

In this work, we report an experimental and numerical study of the intracavity spatial filtering in edge-emitting lasers using a chirped photonic crystal (PhC) as the filtering element in the near-field domain. We provide a comprehensive analysis of the near-field PhC filtering scheme and compare it to conventional spatial filtering using a variable width slit in the far-field domain. Using a two-dimensional chirped PhC as a spatial filter, we experimentally demonstrate a brightness enhancement by a factor of 1.3, considering an edge-emitting laser with a 1.5 mm cavity length, consistent with a numerical prediction of brightness enhanced by a factor of 1.7. The experimental results are theoretically confirmed by numerical integration of a spatio-temporal model of the edge-emitting laser. Furthermore, numerical results show that brightness can be further increased over a factor of 2, applying optimized spatial-filtering elements at both the front and rear facets of the lasers.

Comparison of static and dynamic characteristics of 1550 nm quantum dash and quantum well lasers.

Compared to quantum well (QW) lasers, lower dimensional quantum dot (QD) or quantum dash (QDash) devices demonstrate superior performances, owing to their quantized energy levels and increased carrier confinement. Here, we report the systematic comparison of static and dynamic properties of long wavelength (1550 nm) QDash and QW lasers. For the QDash lasers, a higher maximum operating temperature and lower temperature dependence was achieved for long cavities, although the threshold current densities were larger than the QW reference devices. The lasing characteristics for QDashes are significantly improved following the application of a high reflectance (HR) coating on the rear facets. The QDash lasers also exhibit three orders lower dark current, of 45 µA/cm2 under -1 V reverse bias. Small signal modulation on the 4 × 550 µm2 Fabry-Perot cavities yields a modulation efficiency of 0.48 GHz/√mA and a maximum 3-dB bandwidth of 7.4 GHz for QDashes, slightly larger than that for the QW devices. Meanwhile, a stronger damping effect was observed for the QDash lasers due to their lower differential gain.

Wide and tunable spectral asymmetry between narrow and wide facet outputs in a tapered quantum-dot superluminescent diode.

A wide spectral asymmetry between the front and rear facets of a tapered chirped quantum dot multi-section superluminescent diode is reported. The spectral asymmetry between the two facet outputs was found to be tunable and highly dependent on the bias asymmetry between the two contact sections, with a spectral mismatch of up to 14 nm. Numerical simulations confirmed a relationship between this spectral asymmetry and the non-uniform filling of the quantum dots' confined states when different current densities are applied to the device electrodes. The results from this investigation open up an additional degree of freedom for multi-section superluminescent diodes, which could pave the way for optical bandwidth engineering via multiplexing the spectral output from both facets, using only a single device.

Single-Mode Fabry-Pérot Quantum Cascade Lasers at λ~10.5 μm

In this paper, we report a single-mode Fabry-Pérot long wave infrared quantum cascade lasers based on the double phonon resonance active region design. For room temperature CW operation, the wafer with 35 stages was processed into buried heterostructure lasers. For a 4 mm long and 13 μm wide laser with high-reflectivity (HR) coating on the rear facet, continuous wave output power of 43 mW at 288 K and 5 mW at 303 K is obtained with threshold current densities of 2.17 and 2.7 kA/cm2. The lasing wavelength is around 10.5 μm. Single mode emission was observed for this particular device over the whole investigated current and temperature range.

Study on DFB Semiconductor Laser Based on Sampled Moiré Grating Integrated With Grating Reflector

We propose a new kind of distributed feedback (DFB) semiconductor laser based on the sampled Moire grating (SMG) integrated with a grating reflector (GR). Coupling coefficient along the laser cavity can be controlled, and $\pi $ phase shift ( $\pi $ -PS) can be introduced by SMG. The GR, which is a uniform sampled grating, can provide light reflection instead of high reflection (HR) facet coating. Thus, the front and rear facets are both coated with anti-reflection coatings (AR/AR) to avoid the influence of random grating phase at the HR facet. Therefore, more output power, better single longitudinal mode (SLM) operation, and higher wavelength precision can be simultaneously achieved, compared with traditional DFB lasers with AR/HR facet coatings. As an example, an 8-channel DFB laser array based on the proposed structure has been simulated. The proposed laser may benefit the applications requiring both high output power and wavelength precision, such as wavelength division multiplexing (WDM) transmission systems and gas sensors.

Design and fabrication of a quantum cascade laser with a chirped sampling grating

We demonstrate a quantum cascade laser (QCL) with a chirped sampling grating by altering the sampling duty cycle along the cavity. The chirped sampling grating structure, with an asymmetric coupling coefficient, can be realized by holographic exposure combined with optical photolithography. We simulated and compared three different types of sampling structures; the QCLs with a 1.5 mm chirped region and 0.5 mm uniform region can achieve an average output-power ratio of 1.71 between the front and rear facets. The proposed chirped sampling grating structure is helpful in realizing a single-mode QCL with improved power efficiency and low fabrication cost.

Performance investigation of 120 Gb/s all-optical logic XOR gate using dual-reflective semiconductor optical amplifier-based scheme

Reflective semiconductor optical amplifiers (RSOAs) use an anti-reflective coating on the front facet and a high reflectivity coating on the rear facet to produce a higher gain than conventional SOAs. In this paper, this potential is exploited to numerically investigate the ultrafast performance of an all-optical logic XOR gate implemented using a dual-RSOA-based scheme at a data rate of 120 Gb/s. The simulation results demonstrate that the XOR gate is capable of operating at 120 Gb/s with better performance than when using conventional SOAs.

Room temperature continuous wave operation of quantum cascade laser at λ ~ 9.4 μm * * Project supported by the National Key Research And Development Program (No. 2016YFB0402303), the National Natural Science Foundation of China (Nos. 61435014, 61627822, 61574136, 61774146, 61674144, 61404131), the Key Projects of Chinese Academy of Sciences (Nos. ZDRW-XH-2016-4, QYZDJ-SSW-JSC027), and the Beijing Natural Science Foundation (No.

Continuous wave (CW) operation of long wave infrared (LWIR) quantum cascade lasers (QCLs) is achieved up to a temperature of 303 K. For room temperature CW operation, the wafer with 35 stages was processed into buried heterostructure lasers. For a 2-mm-long and 10-μm-wide laser with high-reflectivity (HR) coating on the rear facet, CW output power of 45 mW at 283 K and 9 mW at 303 K is obtained. The lasing wavelength is around 9.4 μm locating in the LWIR spectrum range.

High-power direct diode laser output by spectral beam combining

We demonstrate a spectral beam combining scheme based on multiple mini-bar stacks, which have more diode laser combining elements, to increase the combined diode laser power and realize equal beam quality in both the fast and slow axes. A spectral beam combining diode laser output of 1130 W is achieved with an operating current of 75 A. When a 9.6X de-magnifying telescope is introduced between the output mirror and the diffraction grating, to restrain cross-talk among diode laser emitters, a 710 W spectral beam combining diode laser output is achieved at the operating current of 70 A, and the beam quality on the fast and slow axes of the combined beam is about 7.5 mm mrad and 7.3 mm mrad respectively. The power reduction is caused by the existence of a couple resonator between the rear facet of the diode laser and the fast axis collimation lens, and it should be eliminated by using diode laser chips with higher front facet transmission efficiency and a fast axis collimation lens with lower residual reflectivity.

Comparison of III-V/Si on-chip lasers with etched facet reflectors.

Electrically pumped heterogeneously integrated III-V/SiO2 semiconductor on-chip lasers with different types of etched facet reflectors are designed and fabricated and their lasing performances are characterized and compared. The III-V quantum-well-based epitaxial layers are bonded on silica-on-silicon substrates and fabricated to form Fabry-Perot lasers with dry-etched rear facets. Three types of reflectors are demonstrated, which are etched facets terminated by air, benzocyclobutene, and metal with a thin layer of SiO2 insulator in-between. The laser devices are characterized and compared, including lasing threshold, external quantum efficiency, and output power, and show the impact of different types of etched facet reflectors on lasing performance.