Compounds in boron-carbon-nitrogen ternary triangle such as diamond (C), cubic boron nitride (c-BN), and boron carbide (B4C) have gained attention due to their covalent bonding, short bond lengths, low atomic mass[1]. These materials exhibit low dielectric values along with excellent mechanical and thermal strength. Boron carbon nitride (BCN) compounds are known to combine unique properties of boron carbide and boron nitride, with the properties being tunable with varying elemental composition and structure. These outstanding properties have made BCN attractive and finds multi-functional applications in anti-wear and protective coatings, supercapacitors, UV detectors, nanobiotechnology and nanomedicine[2]. BCN thin films also find opto-electronic applications in the harsh environments. While addition of small amounts of hydrogen has been proven beneficial for electrical and optical properties in BCN films, the electrical behavior of hydrogenated BCN films at low temperatures is not evaluated. Such evaluations will further expand the use of of hydrogenated BCN for extreme temperature applications.In this study, BCN thin films are deposited using RF magnetron sputtering with varying hydrogen/nitrogen gas flows. Substrate temperature is kept constant at room temperature. Dual target sputtering from B4C and BN targets is performed to deposit BCN thin films. I-V characterization is performed from room temperature to 70 K. The variation in resistivity with reactive gas flow rate at low temperature is reported.