The ortho-para conversion of interstitial ${\mathrm{H}}_{2}$ in single-crystalline natural Si ($^{\text{nat}}\mathrm{Si}$) and $^{29}\mathrm{Si}$ (enrichment 96.2%) is studied by Raman scattering. The conversion process was found to be practically independent of the isotope composition of Si. The characteristic ortho-to-para conversion time at 77 K was found to be $220\ifmmode\pm\else\textpm\fi{}35$ and $200\ifmmode\pm\else\textpm\fi{}35$ h for $^{29}\mathrm{Si}$ and $^{\text{nat}}\mathrm{Si}$, respectively, whereas at room temperature the back conversion occurs with a characteristic time of $8.8\ifmmode\pm\else\textpm\fi{}1.5$ and $10.5\ifmmode\pm\else\textpm\fi{}1.5$ h for $^{29}\mathrm{Si}$ and $^{\text{nat}}\mathrm{Si}$, respectively. These values agree very well with the transition rates found in previous IR absorption studies by Peng et al. for $^{\text{nat}}\mathrm{Si}$ [Phys. Rev. B 80, 125207 (2009)]. Our findings imply that an interaction of ${\mathrm{H}}_{2}$ with the nuclear spin of nearby $^{29}\mathrm{Si}$ has marginal, if any, effects on the ortho-para conversion rate of molecular hydrogen in silicon.