Rapid Crystallization Process Research Articles

Picosecond Laser Induced Rapid Crystallization in Amorphous Silicon

Rapid crystallization processes in ion-implanted amorphous silicon were investigated by using picosecond laser pulses. Two different thresholds for crystallization were observed. One of crystallization thresholds was found to be clearly below the amorphization threshold. The other crystallization threshold was well above the amorphization threshold. Additionally, well-marked boundaries were observed at the irradiation of two pulses separated by nanosecond time delays. At a small spot size, the irradiated sample surface became undulating. It is pointed out that inhomogeneous melting as well as shock stress are important in the rapid crystallization process at energy densities just below the amorphization threshold.