Pulsed-plasma chemical vapor deposition of 1,3,5-trimethyl-1,3,5-trivinylcyclotrisiloxane (V3D3) and water produced thin films with significant Si–OH content. Subsequent annealing of the films resulted in condensation of proximal Si–OH groups, further generating a Si–O–Si network and strengthening the film. Fourier-transform infrared spectroscopy analysis showed increasing OH content with increasing plasma duty cycle, and nanoindentation results confirmed increasing hardness with duty cycle, with the 10–40 duty cycle annealed sample having a hardness value of 0.527 GPa. These results were explained within the context of the continuous random network theory and percolation of rigidity arguments. Thermal stability was excellent, with a best-case thickness retention of 99.25% after a 2 h anneal at 400 °C under N2. Dielectric constants for the annealed films ranged between 2.55 and 2.9. The moderate power involved (200 W peak) is amenable to inclusion of a porogen species, opening the possibility of using this methodology to generate a porous thin film with adequate mechanical properties via chemical vapor deposition.
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