Radio Frequency Magnetron Sputtering Research Articles

Enhancing activated carbon supercapacitor electrodes using sputtered Cu-doped BiFeO3 thin films.

This work describes the fabrication of a composite supercapacitor electrode made of Cu-doped BiFeO (Cu-BFO) films on an activated carbon (AC) electrode using radio-frequency (RF) magnetron sputtering. To prevent exfoliation of Cu-BFO and AC upon immersion in an electrolyte, the nickel foam sandwiching electrode technique was introduced. The Cu-BFO films significantly enhanced electrochemical properties, increasing specific capacitance by up to 151% compared to that of an AC electrode. This was attributed to Faradaic reactions and specific surface area in the Cu-BFO/AC electrode. The highest specific capacitance achieved was 169 F at 0.5 A , and cycling stability retention was 93.12% after 500 cycles. However, the remaining percentage of the specific capacitance decreased differently with increasing thickness, which is also discussed. Furthermore, an asymmetric supercapacitor using Cu-BFO/AC and AC electrodes demonstrated a high energy density of 4.71 Wh , power density of 2.66 kW , and over 90% retention after 1000 cycles, highlighting its durability. The uniform RF magnetron sputtering deposition is vital for mass production. Combined with impressive retention in asymmetric supercapacitors, this scalability suggests a promising pathway for large-scale manufacturing. Consequently, this work could pave the way for the large-scale production of supercapacitors.

On the Effect of Randomly Oriented Grain Growth on the Structure of Aluminum Thin Films Deposited via Magnetron Sputtering

The microstructure of aluminum thin films, including the grain morphology and surface roughness, are key parameters for improving the thermal or electrical properties and optical reflectance of films. The first step in optimizing these parameters is a thorough understanding of the grain growth mechanisms and film structure. To investigate these issues, thin aluminum films with thicknesses ranging from 25 to 280 nm were coated on SiOx/Si substrates at ambient temperature under high-vacuum conditions and a low argon pressure of 3 × 10−3 mbar (0.3 Pa) using the radio frequency magnetron sputtering method. Quantitative analyses of the surface roughness and nanograin characteristics were conducted using atomic force microscopy (AFM), transmission electron microscopy (TEM), and X-ray diffraction. Changes in specular reflectance were measured using ultraviolet–visible and near-infrared spectroscopy. The low roughness values obtained from the AFM images resulted in high film reflectivity, even for thicker films. TEM and AFM results indicate monomodal, randomly oriented grain growth without a distinct columnar or spherical morphology. Using TEM cross-sectional images and the dependence of the grain size on the film thickness, we propose a grain growth mechanism based on the diffusion mobility of aluminum atoms through grain boundaries.

Water Vapor-Impermeable AlON/HfOx Bilayer Films Deposited by Hybrid High-Power Impulse Magnetron Sputtering/Radio-Frequency Magnetron Sputtering Processes

Water vapor-impermeable AlON/HfOx bilayer films were constructed through a hybrid high-power impulse magnetron sputtering (HiPIMS) and radio-frequency magnetron sputtering process (RFMS), applied as an encapsulation of flexible electronics such as organic photovoltaics. The deposition of monolithic and amorphous AlON films through HiPIMS was investigated by varying the duty cycles from 5% to 20%. At an accelerated test condition, 60 °C, and 90% relative humidity, a 100 nm thick monolithic AlON film prepared using a duty cycle of 20% exhibited a low water vapor transmission rate (WVTR) of 0.0903 g m−2 day−1 after testing for 336 h. Furthermore, after introducing a nanocrystalline HfOx film through RFMS, a 214 nm thick AlON/HfOx bilayer film reached the lowest WVTR of 0.0126 g m−2 day−1.

Tuning the optical, electrical, and structural properties of Cu-DLC thin films via simultaneous DC-RF unbalanced magnetron sputtering

This study evaluates the deposition of diamond-like carbon (DLC) films with copper impurities on a glass substrate using simultaneous direct current (DC) and radio frequency (RF) magnetron sputtering. The structural, optical, electrical, and mechanical properties, as well as the surface topography of the films, were investigated under various DC power levels using Raman spectroscopy, ellipsometry, UV-VIS, I-V measurements, nanoindentation, AFM, and FESEM. Results indicate that increasing the DC power to the graphite target from 60 to 120 W, while maintaining a constant 10 W of RF power to the copper target, enhances the optical absorption coefficient of the films and increases the optical bandgap from 0.95 eV to 1.55 eV. Concurrently, the refractive index decreases from 1.84 to 1.64. Raman spectra reveal that the G peak position and the ID/IG ratio decrease, suggesting an increase in sp³ bonds relative to sp2 bonds in the film structure. The surface topography shows increased deposition power raises the surface roughness of the films. Optical emission spectroscopy (OES) during deposition indicates that higher DC power reduces the relative intensity of Cu active species, leading to less Cu embedded in the film structure. Additionally, the emission spectrum shows an increase in hydrogen-containing species, suggesting a rise in sp³ C-H bonds compared to sp³ C-C bonds in the film structure.

Microstructure and characteristics of Zn and Mg-doped LiNbO3 materials for electrochromic devices

In this investigation, polycrystalline targets of lithium niobate (LN), zinc-doped lithium niobate (Zn:LN), and magnesium-doped lithium niobate (Mg:LN) were synthesized utilizing the Hot Isostatic Pressing (HIP) and Cold Isostatic Pressing (CIP) sintering technique. Subsequently, amorphous thin films of LN, Zn:LN, and Mg:LN and electrochromic devices were fabricated via radio frequency (RF) magnetron sputtering. Comprehensive characterization of the microstructure and optoelectronic properties of the targets, films and devices was conducted employing scanning electron microscopy, X-ray diffraction, spectrophotometry, atomic force microscopy, and an electrochemical workstation. Studies have shown that doping with zinc and magnesium enhances the sintering quality of ceramics, reducing lithium vacancies in polycrystalline lithium niobate ceramics. Zinc doping increases the resistance of lithium niobate, whereas magnesium doping introduces a secondary phase that decreases the resistance. The resistances of LN, Zn:LN, and Mg:LN polycrystalline ceramics are 8.35 GΩ, 9.80 GΩ, and 7.61 GΩ, respectively. The doping process refines the growth of the target and film particles, enhancing the microstructural quality. Notably, the ionic conductivity of the Mg:LN film escalates to 1.7 × 10−5 S/cm. Using doped lithium niobate thin films as electrolytes, the electrochromic devices showed a 38 % increase in coloration efficiency and a 46 % improvement in bleaching efficiency, significantly enhancing device performance.

THE EFFECT OF SPUTTERING TEMPERATURE OF TiO2/ITO-PEN PHOTOANODES IN DYE SENSITIZED SOLAR CELL

Currently, the world is facing a major crisis related to the lack of sustainable, safe, and environmentally friendly energy resources. Dye sensitized solar cells (DSSC), another name for third-generation solar cells, have gained a lot of interest due to ease of production, cheapness, and environmental friendliness. The photoanode is among DSSC's most crucial components. In this research, the active layer on the TiO2 photoanode was optimized to improve the efficiency of the DSSC. The active layer was deposited using Radio Frequency (RF) magnetron sputtering on an Indium tin oxide-polyethylene naphthalate (ITO-PEN) substrate. The sputtering temperature was varied to 25, 80, 120, and 160℃ for one hour. The thin film TiO2/ITO-PEN photoanode will be characterized by means of X-ray Diffraction (XRD), Ultraviolet-Visible (UV-Vis) spectroscopy, and solar simulator. The XRD analysis shows that the best crystal size is 14.55 nm for a sputtering temperature of 80℃. According to the UV-Vis data, optical absorption increases with increasing sputtering temperature. The wavelength range where the absorption peak occurs is 252–465 nm, and the smallest value of the energy gap is found at a sputtering temperature of 25℃ with a value of 3.02 eV. For the TiO2/ITO-PEN thin layer, the maximum efficiency was achieved at 0.12% at a sputtering temperature of 25°C.

Investigating the influence of RF power on the surface morphological and optical properties of sputtered TiO2 thin films

Thin films of titanium dioxide (TiO2), with thicknesses ranging from 105 to 231 nm, were deposited on glass substrates using radio-frequency (RF) magnetron sputtering in an argon atmosphere at four distinct RF power levels: 40, 70, 100, and 130 W, with the deposition time kept constant. The crystalline structure, surface morphology and optical and semiconductor properties of the obtained films were analyzed using X-ray diffraction (XRD), Atomic Force Microscopy (AFM) and UV–visible transmittance spectroscopy. These analyses revealed that the crystallinity of the films improves with increasing RF power, corresponding to an increase in film thickness. Consequently, the samples transition from poorly crystalline or amorphous structure to a monocrystalline rutile phase with a (110) texture. However, at the highest RF power studied, this texture is partially disrupted by the formation of nanocrystals with different orientations. The surface roughness exhibited multifractal characteristics, with complexity systematically decreasing and surface stiffness reducing as RF power increased. Refractive indices and optical band gap energies were determined using the Swanepoel and Tauc plot methods, respectively. The films exhibited a notable increase in the refractive index and a decrease in the optical band gap, from 3.81 eV to 3.52 eV, as the RF power was increased. This underscores the influence of RF power on the optical and semiconductor properties of TiO2 films.

Key Sputtering Parameters for Precursor In2O3 Films to Achieve High Carrier Mobility.

Owing to their extremely high carrier mobility (μ) of >100 cm2/(V s) and suitable low carrier concentrations, transparent conducting films of solid-phase crystallized H-doped In2O3 (spc-IO:H) exhibit high conductivity with high optical transparency over a broad frequency range. These properties can be attributed to solid-phase crystallization of the amorphous precursor film. Therefore, the development of high-quality spc-IO:H films requires the deposition conditions of the precursor films to be optimized. This study systematically investigates the effects of three key sputtering parameters, namely, water vapor partial pressure (PH2O), radio frequency magnetron sputtering power (PRF), and flow ratio of O2 to total sputter gas (fO2) on the crystallographic texture evolution of spc-IO:H films during solid-phase crystallization. In addition, the carrier transport in the resulting films is examined. PH2O, PRF, and fO2 are found to be indispensable for producing high-mobility (>100 cm2/(V s)) spc-IO:H films. Furthermore, it is found that introducing a small amount of PH2O during deposition, a lower PRF, and a suitable fO2 facilitates the formation of precursor films having a lower crystallite density. Moreover, after annealing at a temperature of 200 °C, the IO:H precursor films with a lower crystallite density are found to have larger crystal grains. However, the μ values of the postannealed IO:H films are mainly correlated with the stoichiometric deviation.

New solid phase microextraction fibers with green clay coating via radio frequency magnetron sputtering for detecting low-polar compounds in water samples

BackgroundDeveloping highly sensitive and selective measurement techniques to detect trace compounds in diverse matrices is a significant challenge in analytical chemistry. These techniques must adhere to green chemistry principles by minimizing organic solvent use, simplifying sample preparation, and streamlining process steps. Additionally, there is a growing need for sustainable analytical methods due to increased environmental awareness. The problem addressed in this work is the need for an eco-friendly and efficient method for the extraction and detection of trace organochlorine pesticides in water samples. ResultsWe employed SPME using a novel clay thin film sorbent, deposited on a nickel-titanium alloy wire via magnetron sputtering. Montmorillonite clay was chosen for its excellent adsorption properties and eco-friendly nature, aligning with green chemistry principles. The approach involved coating the SPME fiber with hydrophobic modified montmorillonite clay, followed by silylation. The method was tested for extracting 12 model organochlorine pesticides, including BHC, lindane, and DDT, demonstrating high isolation efficiency. The coated thin film and its silylation modification were characterized using standard spectroscopic techniques, confirming the successful creation of a new adsorbent phase. The direct immersion SPME approach achieved relative recoveries ranging from 65 % to 99 %, with reproducibility (RSD) below 6 %. This method provided low detection limits (10–15 ng L−1) and quantitation limits (32–50 ng L−1). SignificanceOur approach offers an eco-friendly, highly efficient solution for the extraction and detection of trace organochlorine pesticides. The significant improvement in recovery rates and reproducibility, combined with low detection and quantitation limits, underscores the potential of this method to enhance analytical practices in environmental monitoring and public health. Furthermore, the use of sustainable materials and processes aligns with global efforts to reduce environmental impact in analytical chemistry.

Structural and morphological properties of CeO2 films deposited by radio frequency magnetron sputtering for back-end-of-line integration

Cerium oxides have potential applications ranging from low-temperature gas sensing to photodetection. A back-end-of-line integration of the material into complementary metal-oxide-semiconductor device fabrication processes has many advantages but places limits on material deposition, most notably the thermal budget for deposition and annealing. Here, we investigate thin cerium oxide films deposited by radio frequency (RF) magnetron sputtering at substrate temperatures of 300°C and RF magnetron powers between 30 W and 70 W without any post-deposition annealing steps. Our investigation of the structural and morphological properties reveals a columnar texture of the thin films, and we find that the material is composed predominantly of CeO2 (111), with a large degree of crystallinity. We discuss implications for resistive gas sensing applications.

Improvement in bioactivity, hardness and friction resistance of 3 % manganese-doped hydroxyapatite coated on alumina using radio frequency magnetron sputtering

Hydroxyapatite (HAP) is a common hard tissue implant material known for its superior biocompatibility and osteoconductivity. However, its poor mechanical strength, brittleness and slow degradation limit the applications. This study explores the enhancement of HAP mechanical properties and bioactivity by coating 3 wt% manganese-doped HAP (Mn-HAP) on another inert biomaterial alumina (Mn-HAP/Al2O3) substrates using the RF magnetron sputtering technique. Characterization of these samples was performed using Field Emission Scanning Electron Microscopy (FESEM), Energy Dispersive X-ray Spectroscopy (EDS), Grazing Incidence X-ray Diffraction (GIXRD), Fourier Transform Infrared Spectroscopy (FTIR) and Brunauer-Emmett-Teller (BET) techniques. Mechanical property was assessed through Vicker's hardness and adhesion of the film was studied by scratch testing. Corrosion resistance was evaluated using Tafel plots in Ringer's solution by Electrochemical analyser (ECA), and dielectric properties were measured using Impedance analyser. Biocompatibility was examined by wettability tests, thrombogenicity, antioxidant test, antimicrobial investigation and MTT [3-(4, 5-dimethythiazol-2-yl)-2, 5-diphenyl tetrazolium bromide] assay. The results show that Mn-HAP/Al2O3 coatings exhibit superior properties as compared to pure HAP, alumina, and HAP/Al2O3. Mn-HAP showed enhanced crystallinity and grain refinement, leading to improved hardness of 1198 HV for Mn-HAP/Al2O3 as compared to 39.84 HV for pure HAP and 1028 HV for HAP/Al2O3. The friction coefficient was found to be best in the Mn-HAP/Al2O3 sample. Corrosion rate significantly decreases in Mn-HAP/Al2O3 (1.63 ± 0.28) mmpy after coating on alumina. In vitro studies demonstrated enhanced cell attachment, proliferation, and differentiation after Mn-HAP coating on alumina. Antimicrobial tests revealed improved resistance against E. coli and S. aureus, with Mn-HAP/Al2O3 showing a larger zone of inhibition. The study concludes that 3 wt% Mn-HAP coatings deposited by RF magnetron sputtering hold great promise for enhancing the performance and longevity of hard tissue implants, paving the way for advanced biomedical applications.

Microstructure, mechanical and tribological characterization of magnetron sputtering ZrN and ZrAlN coatings

In this research paper, mechanical and tribological characterization of novel high wear-resistant ZrN-ZrAlN coatings are presented. The varying concentrations of AlN is chosen to evaluate the influence of AlN the surface morphological, nanomechanical, and tribological properties of the composite coating. The coatings were developed on D9 steel substrates using nitrogen reactive gas radio frequency (RF) magnetron sputtering of zirconium and aluminium targets in an argon plasma. Variable power density for the aluminium target and constant power density for zirconium, was used to obtain in a systematic way, the variable concentration of AlN in the coating. Surface morphological studies were carried out to evaluate composition and crystal structure using X-ray diffraction (GIXRD), Raman spectroscopy, and energy-dispersive X-ray spectroscopy (EDS). Coatings display a polycrystalline structure, but the level of crystallinity decreases with higher AlN concentration. Nanomechanical and nano scratch testing, along with tribological experimental studies were performed to comprehensively analyse performance of the developed coatings. Higher hardness of composite coating is achieved with optimal concentration of AlN in ZrN-ZrAlN coating. Adhesion strength of the coatings increased with the increase in the concentration of AlN. ZrN-ZrAlN coatings depicted low wear, however coatings containing AlN exhibits superior wear resistance.

Production of GeOx Films at Different Oxygen Flow Rates and Different Annealing Temperatures and Examination of Energy Band Gaps using Kubelka Munk Method

In this study, GeOx films were grown on silicon substrates using the Radio Frequency (RF) Magnetron Sputtering method at different oxygen flow rates and annealing temperatures. The films were produced at a substrate temperature of 250°C and a working pressure of 13 mTorr. Subsequently, the films were annealed at temperatures of 300°C, 500°C, 600°C, 700°C, 900°C, and 1000°C. Total and diffuse reflection measurements were performed to investigate the optical properties of the films. Energy band gaps were determined using diffuse reflection measurements and they were calculated using the Kubelka-Munk method. It was observed that the energy band gap increased with increasing oxygen ratio. Additionally, annealing temperatures were found to cause changes in the energy band gaps.

Microstructural and properties investigations of tantalum-doped tungsten diboride ceramic coatings via HiPIMS and RF magnetron sputtering

In this work, tantalum-doped tungsten boride ceramic coatings were deposited from a single sputtering target with the radio frequency (RF) and high-power impulse magnetron sputtering (HiPIMS) methods. Two-inch torus targets were synthesised from pure elements with the spark plasma sintering (SPS) method with a stoichiometric composition of W1-xTaxB2.5 (x = 0, 0.08, 0.16, 0.24). Films were deposited with RF and HiPIMS power suppliers at process temperatures from RT to 600 °C. The substrate heating and the energy of the ionised material impacting the substrate increase the surface diffusivity of adatoms and are crucial in the deposition process. The results of SEM and XRD investigations clearly show that the addition of tantalum also changes the microstructure of the deposited films. The coatings without tantalum possess a finer microstructure than those with 24% of tantalum. The structure of films is homogeneous along the film thickness and composed mainly of columns with a (0001) preferred orientation. Deposited coatings are composed mainly of P6/mmm α-WB2 structures. The analysis of nanoindentation results allowed us to determine that ceramic coatings obtained with the HiPIMS method possess hardness above 41 GPa and a ratio of hardness to reduced Young modulus above 0.1. The thickness of HiPIMS-deposited films is relatively small: only around 60% of the RF magnetron sputtered coatings even when the average power input was two times higher. However, it has been shown that the RF coatings require heating the substrate above 400 °C to obtain a crystalline structure, while the HiPIMS method allows for a reduction of the substrate temperature to 300 °C.

Characterization of SiNx grown at different nitrogen flow and prediction of refractive index using artificial neural networks

SiNx films were grown on silicon substrates by Radio Frequency (RF) magnetron sputtering deposition. The effect of nitrogen flow on the structural and optical properties of the obtained films was investigated using X-ray diffraction, Scanning Electron Microscopy (SEM), UV–Vis–NIR spectrophotometer and spectroscopic ellipsometer, respectively. XRD spectra of the films showed that all films belong to amorphous structure. SEM photographs of SiNx films were analyzed. As a result of the analysis, it was observed that the surfaces of the films had a homogeneous and smooth structure as the nitrogen flow increased. The total and diffuse reflectance spectra of the films were measured and the energy band gaps of the films were determined using the Kubelka-Munk function by using the diffuse reflectance. It was observed that the energy band gap changed as the nitrogen percentage increased. The refractive index of all films was obtained as a function of temperature using a spectroscopic ellipsometer. In the second part of this study, we focused on predicting the temperature dependent refractive indices of the nitrogen flow-dependent films using Artificial Neural Networks (ANN). For the training of the ANN model, wavelength and temperature values from experimental data were used as input and refractive index as output parameters. The simulation and prediction results obtained from this model are compared with the experimental data and interpreted. It is concluded that the ANN approach is suitable for simulating and predicting the temperature dependent refractive index. The models successfully trained with ANN will be especially preferred for predicting the refractive indices of SiNx films, which cannot be measured experimentally, thus providing predictions in non-experimental ranges. In particular, the results obtained by focusing on the ability of the developed artificial neural network (ANN) models to predict the optical properties of SiNx films and their potential to provide information in non-experimental conditions, offer a new approach to quickly and effectively evaluate the optical properties of SiNx films. This approach reveals the importance of artificial intelligence-based methods in materials characterization studies.

Structure, mechanical, and tribological properties of Ag2CrO4 high-temperature oxide coatings

In this research, a series of Ag2CrO4 high-temperature self-lubricating oxide coatings were prepared by reactive radio frequency magnetron sputtering under different argon-oxygen flow ratio (Ar:O2 ratio) conditions. Effects of the gas flow ratio on phase composition, coating morphology, high temperature treatment in air atmosphere, mechanical and tribological properties are studied. A low Ar:O2 flow ratio is beneficial for the formation of Ag2CrO4 phase. At high temperature treatment, formation of surface Ag particle and volatility and decomposition of the Ag2CrO4 phase are observed, and the volatility and decomposition of the coating are slight at temperatures below 500 °C. When the Ar:O2 ratio is 1:1, the coating shows exceptional comprehensive performance, it is dense with a smooth surface, excellent toughness and bond strength, and the lowest wear rate and coefficient of friction, which is 0.14 mm3/10−3N∙m and 0.35 respectively. The coating can function as a lubricant in temperature environments of 500 ℃ and below, demonstrating practical application value.

Understanding the Anomalous Thermoelectric Behavior of Fe-V-W-Al-Based Thin Films.

We investigated the thermoelectric and thermal behavior of Fe-V-W-Al-based thin films prepared using the radio frequency magnetron sputtering technique at different oxygen pressures (0.1-1.0 × 10-2 Pa) and on different substrates (n, p, and undoped Si). Interestingly, at lower oxygen pressure, formation of a bcc-type Heusler structure was observed in deposited samples, whereas at higher oxygen pressure, we have noted the development of an amorphous structure in these samples. Our findings indicate that the moderately oxidized Fe-V-W-Al amorphous thin film deposited on the n-Si substrate possesses a large magnitude of S ∼ -1098 ± 100 μV K-1 near room temperature, which is almost double the previously reported value for thin films. Additionally, the power factor (PF) indicated an enormously large value of ∼33.9 mW m-1 K-2 near 320 K. The thermal conductivity of the amorphous thin film is also found to be 2.75 Wm-1 K-1, which is quite lower compared to bulk alloys. As a result, the maximum figure of merit is estimated to be extremely high, i.e., ∼3.9 near 320 K, which is among one of the highest reported values so far. The anomalously large value of Seebeck coefficient and PF has been ascribed to the unusual composite effect of the metallic amorphous oxide phase and insulating substrate possessing a large Seebeck coefficient.

Fabricating highly stable and reliable vanadium dioxide thin films: Insights from radio frequency magnetron sputtering

This study establishes an optimization protocol to fabricate a stoichiometric VO2 thin film onto the glass substrate using a single process step in RF magnetron sputtering. An interplay between the substrate temperature and the oxygen-to-argon ratio in process gas is shown to achieve a range of VOx composition (from oxygen-rich to oxygen-deficient phases). The re-sputtering phenomenon is found to be crucial at higher temperature (T ≥ 873 K), leading to a shift in stoichiometry from V2O5 to V2O3. Moreover, a process model for the fabrication of various VOx compounds in thin film form is also established in this study. The crystal structure transformation from M1 to R phase for these VO2 thin films deposited over a range of process conditions is found to be 339 ± 1 K, in close agreement with the reported value for the bulk VO2. In spite of the microstructural variations, these films are found to show consistent phase transition behavior, excellent stability, and reliability in repeated thermal cycles. These films show a semiconductor-to-metal transition, which is correlated to their structural phase transformation temperature. Moreover, this study also establishes a correlation between various external stimuli, widening the usage of this material in a range of applications.

Engineering wafer scale single-crystalline Si growth on epitaxial Gd2O3/Si(111) substrate using radio frequency sputtering for silicon on insulator application

Silicon on Insulator (SOI) technology has been the promising solution for the On-chip low-power mixed-signal systems. However, the traditional smart-cut method for SOI wafer fabrication is costly. Hence, in this work, we present an optimized methodology to fabricate a wafer scale single-crystalline Si on epitaxial Gd2O3/Si(111) substrate (SOXI) using a low-cost, high volume manufacturable (HVM)-friendly Radio Frequency magnetron sputtering technique for SOI application. The grown Si and Gd2O3 layers are physically characterized using high-resolution X-ray Diffraction and high-resolution Transmission Electron Microscopy (HRTEM). The Grazing Incidence X-ray Diffraction, Pole Figure, and HRTEM imaging confirm the formation of an epitaxial Top-Si layer on the epitaxial-Gd2O3/Si(111) substrate. Hence, we demonstrate a low-cost, HVM-friendly technique for the fabrication of SOXI wafers.

Thickness dependence and crystallization properties of amorphous GeTe thin films on silicon dioxide

Radio frequency magnetron sputtering was used to prepare the amorphous GeTe thin films on silicon dioxide and the thickness effects on the crystallization behavior were investigated. With the film thickness reducing, the crystallization temperature, crystallization activation energy, amorphous and crystalline resistance increase remarkably, indicating the great improvement in thermal stability and power consumption. Ozawa’s model was used to estimate the crystallization kinetics of GeTe thin films, it shows that nucleation and grain growth occur simultaneously, and grain growth dominates ultimately. XRD analysis demonstrated that the grain size can be reduced and the crystallization process of GeTe thin film can be inhibited with the film thickness decreasing. Furthermore, the thinner film has smaller resistance drift index and surface roughness, which are beneficial to improve the reliability of storage device. T-type phase change memory devices based on 25 nm GeTe thin film were fabricated by 0.13 μm CMOS technology, and the current–voltage and resistance-voltage characteristics demonstrate the excellent electrical performance, including the fast resistance switching between SET and RESET processes, low threshold current and voltage. All the results proved the strong dependency relationships between the crystallization properties and film thickness of GeTe thin film, which paves the way for developing high-density phase change memory in the fields of big data and artificial intelligence.